KNB3308A

KIA 80A，80V N-CHANNEL MOSFET 3308A SEMICONDUCTORS 1. Features n RDS(ON)=6.2mΩ@VGS=10V n Lead free and green device available n Low Rds-on to minimize conductive loss n High avalanche current 2. Applications n n Power supply DC-DC converters 3. Pin configuration 1 of 7 Pin Function 1 Gate 2 Drain 3 Source Rev 1.2 .Nov. 2017 80A，80V N-CHANNEL MOSFET KIA 3308A SEMICONDUCTORS 4. Absolute maximum ratings Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Continuous drain current TC=25 ºC ID3 TC=100 ºC TO-252 Maximum TO-263 TO-247 80 Units V +25 V 80* 80 80 A 70* 70 70 A IDP4 340 A Avalanche current IAS5 20 A Avalanche energy EAS5 410 mJ Pulse drain current TC=25 ºC TC=25 ºC 120 240 288 W 60 100 144 W PD Maximum power dissipation TC=100 ºC -55～175 Junction & storage temperature range TJ,TSTG *Drain current limited by maximum junction temperature. ºC 5. Thermal characteristics Parameter Symbol Thermal resistance-junction to case Rθjc Thermal resistance-junction to ambient Rθja 2 of 7 TO-252 Typical TO-263 TO-247 1.04 0.52 0.44 55 Units ºC/W Rev 1.2 Nov. 2017 KIA 80A，80V N-CHANNEL MOSFET 3308A SEMICONDUCTORS 6. Electrical characteristics Parameter (TA=25°C,unless otherwise noted) Min Typ Max Unit Symbol Conditions BVDSS VGS=0V,IDS=250μA 80 - - VDS=64V,VGS=0V - - 1 - - 100 Static characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current Drain-source on-state resistance IDSS TJ=125 ºC V μA VGS(th) VDS=VGS, IDS=250μA 2 3 4 V IGSS VGS=+25V,VDS=0V - - +100 nA RDS(on)1 VGS=10V,IDS=30A - 6.2 9 mΩ VSD1 ISD=40A,VGS=0V - - 1.3 V - - 80 A - 25 - nS - 18.5 - nC - 1.3 - Ω - 3110 - - 445 - Diode characteristics Diode forward voltage Diode continuous forward current IS3 Reverse recovery time trr Reverse recovery charge Qrr IF=40A,dl/dt=100A/μs Dynamic characteristics 2 Gate resistance RG Input capacitance Ciss VGS=0V, VDS=0V,F=1MHz VGS=0V, VDS=25V, F=1.0MHz Output capacitance Coss Reverse transfer capacitance Crss - 270 - Turn-on delay time td(ON) - 20.4 - - 63 - 67 - - 43 - - 76 - - 9.5 - Turn-on rise time tr Turn-off delay time td(OFF) Turn-off fall time Gate charge characteristics Total gate charge Gate-source charge VDD=37.5V,ID=40A, VGS=10V,RG=6.8Ω tf pF nS 2 Qg VDS=37.5V, VGS=10V, ID=40A, Qgs nC Gate-drain charge Qgd 40 Note:1. Pulse test; pulse width ≤300μs, duty cycle ≤2%. 2.Guaranteed by design,not subject to production testing. 3.Package limitation current is 50A. Calculated continuous current based on maximum allowable junction temperature. 4.Repetitive rating, pulse width limited by max junction temperature. 5.Starting TJ=25 ºC, L=1mH,IAS=40A. 3 of 7 Rev 1.2 Nov. 2017 KIA 80A，80V N-CHANNEL MOSFET 3308A SEMICONDUCTORS 7.Test circuits and waveforms 4 of 7 Rev 1.2 Nov. 2017 KIA 80A，80V N-CHANNEL MOSFET 3308A SEMICONDUCTORS 5 of 7 Rev 1.2 Nov. 2017 KIA 80A，80V N-CHANNEL MOSFET 3308A SEMICONDUCTORS 6 of 7 Rev 1.2 Nov. 2017 KIA 80A，80V N-CHANNEL MOSFET 3308A SEMICONDUCTORS 7 of 7 Rev 1.2 Nov. 2017