PPMUT20V3

PPMUT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) RDS(on)(Ω) I D(A) G（1） 0.095 @ VGS=-4.5V -20 -2.8 0.12@ VGS=-2.5V S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS I D =-250μA,VGS=0V -20 - - V Zero Gate Voltage Drain Current I DSS VDS =-16V,VGS=0V - - -1 μA Gate-Body Leakage Current I GSS VDS =0V,VGS=±8V - - ±100 nA Gate Threshold Voltage VGS(th) VDS =VGS, I D =-250μA -0.45 -0.9 V VGS=-4.5V, I D =-2.8A - 0.11 0.14 Ω VGS=-2.5V, I D =-2.0A - 0.15 0.18 Ω VGS=-1.8V, I D =-1.0A - 0.20 0.30 Ω Static Drain-Source On-Resistance 2 Forward Tran conductance RDS(ON) gFS VGS=5V, I D =50mA, TA=125℃ 6.5 S - 460 pF - 155 pF - 50 pF DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance CDSS Reverse Transfer Capacitance CRSS VGS=0V, VDS =10V, f=1MHz SWITCHING PARAMETERS Rev.06.3 Turn-On Delay Time td(on) Turn-Off Delay Time td(off) VDD=-6V, VGS =-4.5V, RL=6Ω, RG=6Ω, I D =-1A 1 - 12 ns - 35 ns www.prisemi.com P-Channel MOSFET PPMUT20V3 Absolute maximum rating@25℃ Rating Symbol Value Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous ID -2.8 A Pulsed ID -4 A TA=25℃ PD 350 mW TA=125℃ PD 225 mW Drain Current Total Power Dissipation Typical Characteristics 10 10 8 ID – Drain Current (A) ID – Drain Current (A) T=25°C VGS=2.5V 8 6 VGS=2.0V 4 2 4 T=125°C 2 VGS=1.5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain Source Voltage (V) VGS – Gate to Source Voltage (V) Fig 1. Output Characteristics Fig 2. Transfer Characteristics 3.0 800 0.6 VGS=1.8V 0.5 Ciss (pF) 600 0.4 C – Capacitance rDS(on) – On-Resistance (Ω) T=55°C 6 VGS=2.5V 0.3 0.2 VGS=4.5V 400 200 COss 0.1 CRss 0 0.0 0 2 4 6 8 0 10 ID – Drain Current (A) 8 12 16 20 VDS – Drain Source Voltage (V) Fig 3. On-Resistance vs. Drain Current Rev.06.3 4 Fig 4. Capacitance 2 www.prisemi.com P-Channel MOSFET PPMUT20V3 Product dimension （SOT-323） A θ C B H D G F E J L K Millimeters Dim MIN MAX A 1.80 2.20 B 1.15 1.35 C 2.00 2.45 D 0.65BSC F 1.20 G 0.05 H 1.40 0.25 0.525REF J 0.20 0.40 K 0.80 1.10 L 0.00 0.10 θ 0° 10° 0.8 1.9 0.7 1.3 Suggested PCB Layout Rev.06.3 3 www.prisemi.com P-Channel MOSFET PPMUT20V3 Marking information P23 Ordering information Device Package Reel MPQ PPMUT20V3 SOT-323 (Pb-Free) 7” 3000 / Tape & Reel Load with information USER DIRECTION OF FEED 2.00 ± 0.05 Φ1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 8.00 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 Rev.06.3 4 www.prisemi.com P-Channel MOSFET PPMUT20V3 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.3 5 www.prisemi.com