P2504EDG

P2504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 25.8mΩ @VGS = -10V -18A TO-252 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS LIMITS Drain-Source Voltage SYMBOL VDS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current TC = 25 °C Power Dissipation -40 TC = 100 °C TJ, TSTG Operating Junction & Storage Temperature Range -40 42 PD TC = 100 °C A -13.5 IDM TC = 25 °C V -18 ID 1 UNITS W 27 -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 3 Junction-to-Ambient RqJA 75 1 UNITS °C / W Pulse width limited by maximum junction temperature. Ver 1.1 1 2013-3-21 P2504EDG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX -2.2 -3.0 UNIT STATIC V(BR)DSS VGS = 0V, ID = -250mA -40 VGS(th) VDS = VGS, ID = -250mA -1.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V 1 VDS = -30V, VGS = 0V , TJ = 125 °C 10 mA On-State Drain Current1 ID(ON) Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance1 VDS = -5V, VGS = -10V RDS(ON) Forward Transconductance1 gfs -40 V A VGS = -7V, ID = -10A 30 40 VGS = -10V, ID = -18A 22 25.8 VDS = -5V, ID = -18A 20 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 2 Qg Gate-Source Charge Gate-Drain Charge 2 Qgs Qgd Turn-On Delay Time Rise Time 2 2 tr Turn-Off Delay Time Fall Time2 VGS = 0V, VDS = -15V, f = 1MHz td(off) VDS = 0.5V(BR)DSS, VGS = -10V, ID = -18A 29 nC 6 7 12 VDS = -20V, RL = 1Ω ID@ -1A, VGS = -10V, RGS = 6Ω 29 nS 42 tf 33 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) IS Continuous Current 1 Forward Voltage Reverse Recovery Time VSD Reverse Recovery Charge Qrr trr IF = -18A, VGS = 0V IF = -18A, dlF/dt = 100A / mS 1 Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2 Independent of operating temperature. Ver 1.1 pF 320 210 td(on) 2 2 1570 2 -18 A -1.3 V 29 nS 21 nC 2013-3-21 P2504EDG P-Channel Enhancement Mode MOSFET Ver 1.1 3 2013-3-21 P2504EDG P-Channel Enhancement Mode MOSFET Ver 1.1 4 2013-3-21 P2504EDG P-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-21