SE40300GTS

SE40300GTS N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device   VDS = 40V RDS(ON) = 1.7mΩ @ VGS=10V Pin configurations See Diagram below TO-220 TO-247 TO-263 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current Continuous Pulsed Single Pulse Avalanche Energy Peak Diode Recovery Total Power Dissipation @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID 288 780 A EAS 1080 mJ dv/dt 5 V/ns PD 250 W TJ -55 to 150 ℃ 1. SE40300GTS Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= 120V, VGS=0V 10 μA IGSS Gate-Body Leakage Current VGS=20 V 100 nA 2.0 3.0 V 1.7 2.0 mΩ VGS(th) RDS(ON) Gate Threshold Voltage VDS= VGS, ID=250μA Static Drain-Source On-Resistance 2 VGS=10V, ID=20A 40 1.0 V DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=25V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 7500 pF 1420 pF 530 pF 96 nC 22 nC 10 nC SWITCHING PARAMETERS Qg Total Gate Charge 2 VGS=10V, VDS=80V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=80V, 24 ns td(off) Turn-Off Delay Time RGEN=3.9Ω 72 ns td(r) Turn-On Rise Time ID=20A 26 ns td(f) Turn-Off Fall Time 31 ns TO-220 Units ID=20A Thermal Resistance Symbol Parameter RθJC Junction to Case 0.6 ℃/W RθJA Junction to Ambient (t≦10s) 60 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 2. SE40300GTS Test Circuits and Waveform ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE40300GTS Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE40300GTS ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE40300GTS Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 6. SE40300GTS Package Outline Dimension TO-247 ShangHai Sino-IC Microelectronic Co., Ltd. 7. SE40300GTS Package Outline Dimension TO-263 ShangHai Sino-IC Microelectronic Co., Ltd. 8. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC - Printed in China - All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 9.