AW5017DNR

AW5017DNR 2016 年 1 月 V1.2 AW5017:内置可调谐电容的 FM 低噪声放大器 特性 描述  无需耳机及拉杆天线， 通过复用 GSM 天线实现 FM AW5017 是一款低噪声放大器， 无需耳机和拉杆天线， 信号接收 通过复用 GSM 天线实现 FM 信号接收。 内置一线可编程逻辑单元的可调谐电容阵列，有效 AW5017 内置 EN 管脚控制的一线可编程逻辑单元， 提升短天线在不同工作频段的天线效率 可控制 16 个台阶的可调谐电容阵列，有效提升短天  极低的噪声系数:1.2dB 线增益  标准 CMOS 工艺 AW5017 具有低噪声，高增益，高线性度的特性，典  1.8V 工作电压下高达 20dB 的增益 型值噪声系数 1.2dB，增益 21dB。  高线性度 AW5017 的电源电压和使能 EN 电压范围在 1.5V 到  EN 管脚支持一线可编程逻辑的 4bit 可调谐电容  工作电压：1.5V~3.6V  关机电流1 Kf IIP3 Input 3rd-order intercept point IB P-1dB In-Band 1dB-compression point OOB P-1dB Output-Of-Band 1dB- compression point (NOTE 3) Input/Output 50ohm (NOTE 4) Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page5 of 18 -9 dBm -21 dBm -2 dBm AW5017DNR Jan 2016 V1.2 Table 6 ELECTRICAL CHARACTERISTICS OF TUNABLE CAPACITOR Test condition: TA=25 ℃, VCC=1.5～3.6V, EN=VCC, Rs=Ro=50 ohm，frequency=90 MHz for typical values (unless otherwise noted). PARAMETER MIN TYP MAX UNIT Vcc Supply Voltage 1.5 2.8 3.6 V TH EN High Level Duration Time 0.4 50 μs TL EN Low Level Duration Time 0.4 50 μs 150 500 μs 150 500 μs (NOTE 5) TLATCH EN State Latch Time TOFF EN Off Delay Time (NOTE 6) n Tunable Stage Number 16 Cmin Minimum Tunable Capacitor 15 pF Cmax Maximum Tunable Capacitor 45 pF Cstep Minimum Stage 2 pF NOTE1: Conditions out of those ranges listed in "absolute maximum ratings" may cause permanent damages to the device. In spite of the limits above, functional operation conditions of the device should within the ranges listed in "recommended operating conditions". Exposure to absolute-maximum-rated conditions for prolonged periods may affect device reliability. NOTE2: The human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin. Test method: MIL-STD-883G Method 3015.7 NOTE3: Measure IIP3 parameter through two tones of -40dBm/tone with the frequency of 97M and 98MHz NOTE4: Input/Output are both 50-ohm; Input signal is composed of in-band 90-MHz signal and out-of-band 900MHz signal. Signal of 90-MHz is fixed to -40-dBm; signal of 900MHz varies and power level is measured when power gain of 90MHz signal drops 1dB. NOTE5: Latch mechanism is already designed inside. When pulse width of high-level is wider than state latch time, chip will keep latch state inside unchanged and won’t accept any new pulses, until off state. NOTE6: Latch mechanism is already designed inside. When EN is changed from high-level to low-level, state inside will be changed to off after off delay time. Pulse Number n Tunable Capacitor State n TOFF TH TL Figure 3 One-Line-Logic Timing Diagram Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page6 of 18 AW5017DNR Jan 2016 V1.2 TYPICAL CHARACTERISTICS Test condition: TA=25 ℃, VCC=1.8 V, EN=1.8 V, Rs=Ro=50 ohm，frequency=90 MHz for typical values (unless otherwise noted). Table 7 TABLE OF FIGURES INDEX FIGURE No. S parameter S11/S21/S12/S22 FIGURE 4/5/6/7 Noise Figure NF FIGURE 8 Stability Factor Kf FIGURE 9 P1dB Compression Point P1dB(In-band/Out-of-Band) FIGURE 10 Noise Figure Cin FIGURE 11 25 0 -1 20 S11(dB) S21(dB) -2 15 -3 -4 10 -5 5 -7 0 10 22 34 46 58 70 82 94 106 118 130 142 154 166 178 190 202 10 23 36 49 62 75 88 101 114 127 140 153 166 179 192 205 -6 Frequency(MHz) Frequency(MHz) Figure 5 Power Gain(S21) Figure 4 Input Return Loss(S11) 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0 -10 -30 -40 -50 10 23 36 49 62 75 88 101 114 127 140 153 166 179 192 205 -60 10 23 36 49 62 75 88 101 114 127 140 153 166 179 192 205 S12(dB) S22(dB) -20 Frequency(MHz) Frequency(MHz) Figure 6 Reverse Isolation(S12) Figure 7 Output Return Loss(S22) Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page7 of 18 AW5017DNR V1.2 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 40 49 58 67 76 85 94 103 112 121 130 139 148 157 10 210 410 610 810 1,010 1,210 1,410 1,610 1,810 2,010 2,210 2,409 2,609 2,809 Stability Factor (Kf) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Frequency(MHz) Frequency(MHz) Figure 8 Noise Figure(NF) Figure 9 Stability Factor(Kf) Input Equivalent Capacitor(pF) 25 20 Power Gain(dB) Noise Figure(dB) Jan 2016 15 10 Out-Of-Band P1dB In-Band P1dB 5 0 -50 -35 -24 -21 -18 -15 -8 -5 Input Power(dBm) -2 Figure 10 P1dB(In-Band/Out-Of-Band) 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 101112131415 Pulse Number Figure 11 Tunable Capacitor(Cin) Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page8 of 18 AW5017DNR Jan 2016 V1.2 Test condition: TA=25 ℃, VCC=2.8 V, EN=2.8 V, Rs=Ro=50 ohm，frequency=90 MHz for typical values (unless otherwise noted). Table 8 TABLE OF FIGURES INDEX FIGURE No. S parameter S11/S21/S12/S22 FIGURE 12/13/14/15 Noise Figure NF FIGURE 16 Stability Factor Kf FIGURE 17 P1dB Compression Point P1dB(In-band/Out-of-Band) FIGURE 18 Noise Figure Cin FIGURE 19 25 0 -1 20 -2 S11(dB) S21(dB) 15 -3 -4 10 -5 5 -6 10 23 36 49 62 75 88 101 114 127 140 153 166 179 192 205 10 22 34 46 58 70 82 94 106 118 130 142 154 166 178 190 202 0 -7 Frequency(MHz) Frequency(MHz) Figure 13 Power Gain(S21) Figure 12 Input Return Loss(S11) 0 0 -10 -5 -20 S12(dB) -10 2 -30 -40 -15 -50 -20 -60 10 23 36 49 62 75 88 101 114 127 140 153 166 179 192 205 Frequency(MHz) Figure 14 Reverse Isolation(S12) 10 23 36 49 62 75 88 101 114 127 140 153 166 179 192 205 -25 -70 Frequency(MHz) Figure 15 Output Return Loss(S22) Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page9 of 18 AW5017DNR Jan 2016 13 12 11 10 9 8 7 6 5 4 3 2 1 0 10 210 410 610 810 1,010 1,210 1,410 1,610 1,810 2,010 2,210 2,409 2,609 2,809 40 49 58 67 76 85 94 103 112 121 130 139 148 157 Noise Figure(dB) Stability Factor(Kf) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Frequency(MHz) Frequency(MHz) 25 Power Gain(dB) 20 15 Out-Of-Band P1dB In-Band P1dB 5 0 -50 -40 -30 -24 -22 -20 -18 -16 -10 -8 -6 -4 -2 0 Input Power(dBm) Figure 18 P1dB(In-Band/Out-Of-Band) Figure 17 Stability Factor(Kf) Input Equivalent Capacitor(pF) Figure 16 Noise Figure(NF) 10 V1.2 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Pulse Number Figure 19 Tunable Capacitor(Cin) Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page10 of 18 AW5017DNR Jan 2016 FUNCTIONAL BLOCK DIAGRAM VCC 1 EN 5 LDO Reference 4bit DCAP RFIN 3 RF OUT LNA 6 Figure 20 2 4 NC GND AW5017 FUNCTION BLOCK DIAGRAM MEASUREMENT DIAGRAM Test DC Characteristics (Current&Power) A 1 2.8V VCC RFIN 6 Pin C1 C2 V 2 AW5017 NC EN 5 EZ-FM 3 Pout RFOUT GND 4 C3 Figure 21 AW5017 DC Test diagram Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page11 of 18 GPIO 1.8V/2.8V V1.2 AW5017DNR Jan 2016 Test S-parameter 1 2.8V VCC RFIN 6 Pin C1 C2 2 AW5017 EN NC 5 GPIO 1.8V/2.8V EZ-FM 3 Pout RFOUT GND 4 C3 NetWork Analyzer Figure 22 AW5017 S-parameter measurement Diagram Test Noise-Figure 1 2.8V VCC RFIN 6 Pin C1 C2 2 AW5017 NC EN 5 GPIO 1.8V/2.8V EZ-FM 3 Pout RFOUT GND 4 C3 NF Analyzer Figure 23 Noise Source AW5017 Noise Figure Measurement Diagram Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page12 of 18 V1.2 AW5017DNR Jan 2016 Test IIP3 Signal Generator 1 2.8V VCC RFIN 6 Pin C1 C2 2 AW5017 NC EN 5 Signal Analyzer RFOUT GND Signal Generator GPIO 1.8V/2.8V EZ-FM 3 Pout Power Combiner 4 C3 Figure 24 AW5017 IIP3 Measurement Diagram Test Tunable Capacitor 2.8V 1 VCC RFIN 6 C1 C2 2 AW5017 EN NC 5 EZ-FM 3 Figure 25 NetWork Analyzer RFOUT GND Arbitrary Waveform Generator 4 AW5017 Tunable Capacitor Measurement Diagram Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page13 of 18 V1.2 AW5017DNR Jan 2016 V1.2 APPLICATION INFORMATION Choice of components Take Figure 2 for example: Filter block near PIFA antenna is composed of L6 and C3. These two components can be removed for Dipole antenna. Typical value of L6 is 68 nH and of C3 is 39 pF. Filter block of FM signal is composed of C1 and L1. GSM signal could go through and FM signal will be blocked. GSM antenna π-type matching circuit is composed of C2, L3 and L4, adjustable based on GSM antenna characteristics. Typically C1 is 39 pF and L1 is 68 nH. Matching circuit of FM signal path is composed of C4, L4, L5 and L7. FM signal could go through and GSM signal will be blocked. Typically L4 is 100 nH, L5 is 68 nH and L7 is 33 nH. C5 is supply filtering capacitor. C6 is DC-blocking capacitor. Both are 47 nF typically. Only when supporting earphone antenna application, C7 is added with the value of 47 nF. Table 9 shows recommended inductor type and values. Table 10 shows recommended capacitor type and values. Table 9 CHOICE OF INDUCTOR PART No. TYP. Q(min) Frequency LQG15HS33NJ02 33nH 8 100MHz LQG15HS68NJ02 68nH 8 100MHz LQG15HSR12J02 120nH 8 100MHz LQG15HSR10J02 100nH 8 100MHz SDCL1005C33NJTDF 33nH 8 100MHz MFR SIZE 0402 Murata 0402 0402 0402 0402 Sunlord SDCL1005C68NJTDF 68nH 8 100MHz 0402 SDCL1005CR12JTDF 120nH 8 100MHz 0402 SDCL1005CR10JTDF 100nH 8 100MHz 0402 Table 10 CHOICE OF INDUCTOR PART No. TYP. Voltage GRM1555C1H220JA01 22pF 25V GRM1555C1H390JA01 39pF 25V GRM155R71C473KA01 47nF 16V MFR SIZE 0402 Murata 0402 0402 EN Control AW5017 supports earphone. When baseband detects earphone inserting, GPIO will pull down, cutting off AW5017 to avoid unnecessary power consumption. Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page14 of 18 AW5017DNR Jan 2016 V1.2 When One-Line-Logic is enabled to change the capacitance of tunable capacitor to improve the voltage gain at the input port, based equivalent diagram is shown as figure 26. In operation frequency band of FM, short antenna can be approximated to series of open induced voltage and equivalent inductor. Therefore, through tuning capacitance value in input port, the voltage gain can be achieved in specified frequency. Meanwhile the receiver performance will be improved. Gain=Vin/Vi Short Antenna Model L5 + 68nH Lant Open Induced Voltage Vi - C3 39pF Figure 26 L4 100nH Tunable Input Capacitor L7 C4 33nH 47nF L6 68 nH Vin Cin AW5017 Frequency Tuning Equivalent Schematic In schematic, the value of tunable capacitor will be derived as following. fboost is FM operation frequency， Leqq is equivalent inductance of input port towards antenna side, which depends on the type and size of short antenna, Cin is tunable capacitance of input port. f boost  1 (Hz) 2  π  L eqq  Cin Figure 27 shows an example of voltage gain influenced by tunable capacitor. Blue and red curves are voltage gain (equal to input voltage / open induced voltage) with maximum and minimum tunable capacitor, respectively. The equivalent inductance of short antenna is 150nH. 60 63.3 66.6 69.9 73.2 76.5 79.8 83.1 86.4 89.7 93 96.3 99.6 102.9 106.2 109.5 112.8 116.1 119.4 122.7 126 129.3 132.6 135.9 139.2 Voltage Gain(dB) 35 30 25 20 15 10 5 0 -5 -10 -15 -20 frequency(MHz) Figure 27 Voltage Gain with Different Tunable Capacitor Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page15 of 18 AW5017DNR Jan 2016 PACKAGE DESCRIPTION Figure 28 Package outline Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page16 of 18 V1.2 AW5017DNR Jan 2016 TAPE&REEL DESCRIPTION 2.0±0.05 Φ1.55±0.05 B＇ 4.0±0.1 4.0±0.1 1.72±0.05 A＇ A REF 5° 1.12±0.05 8.0±0.3 3.5±0.05 1.75±0.1 0.25±0.05 B Φ0.55±0.05 0.7±0.05 Section A-A＇ Figure 29. Tape and Reel Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page17 of 18 Section B-B＇ V1.2 AW5017DNR Jan 2016 V1.2 REVISION HISTORY Table 11 . Revision history Document ID Release date Change notice Supersedes AW5017_V1.2 2016-01 Added Tape & Reel Description and corrected the marking location of Pin1 AW5017_V1.1 AW5017_V1.1 2015-12 Modified Marking A into B AW5017_V1.0 AW5017_V1.0 2015-11 Added matching capacitor C10 AW5017_V0.9 AW5017_V0.9 2014-12 Preliminary data sheet - DISCLAIMER Information in this document is believed to be accurate and reliable. However, Shanghai AWINIC Technology Co., Ltd (AWINIC Technology) does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Resale of AWINIC components or services with statements different from or beyond the parameters stated by AWINIC for that component or service voids all express and any implied warranties for the associated AWINIC Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page18 of 18 AW5017DNR Jan 2016 V1.2 component or service and is an unfair and deceptive business practice. AWINIC is not responsible or liable for any such statements. Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD Page19 of 18