BC516

BC516 PNP Silicon Darlington Transistor Collector Base Emitter 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 10 V Collector Current (DC) -IC 500 mA Peak Collector Current -ICM 800 mA Total Power Dissipation Ptot 500 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 20 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 10 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 10 mA Transition Frequency at -VCE = 5 V, -IC = 10 mA Symbol Min. Max. Unit hFE 30000 - - -ICBO - 100 nA -IEBO - 100 nA -V(BR)CBO 40 - V -V(BR)CEO 30 - V -V(BR)EBO 10 - V -VCE(sat) - 1 V -VBE(sat) - 1.5 V -VBE(on) - 1.4 V fT 125 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/01/2008