SESD5L5V

SHANGHAI June 2008 MICROELECTRONICS CO., LTD. SESD5L5V ESD Protection Diode With Ultra-Low Capacitance General Description Revision:A Features The ESD5L5V is designed to protect voltage sensitive z Ultra Low Capacitance 0.5 pF components that require ultra-low capacitance from ESD z Low Clamping Voltage and transient voltage events.Excellent clamping capability, z Small Body Outline Dimensions: low capacitance, low leakage, and fastresponse time, make z Stand-off Voltage: 5 V these parts ideal for ESD protection on designs where z Low Leakage board space is at a premium. Because of its low z Response Time is Typically < 1.0 ns capacitance, it is suited for use in high frequency designs z IEC61000-4-2 Level 4 ESD Protection such as USB 2.0 high speed and antenna line applications. z This is a Pb-Free Device Complies with the following standards IEC61000-4-2 Level 4 15 kV (air discharge) 8 kV(contact discharge) MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) Functional diagram SOD-523 Maximum Ratings Parameter Symbol Value Unit IEC 61000-4-2 (ESD) Contact 8 kV ESD Voltage Per Human Body Model 25 kV Per Machine Model 400 V Peak Pulse Power (tp = 8/20μs) @ TA=25℃ PD 100 W Junction and Storage Temperature Range TJ,TSTG -55 to 150 ℃ TL 260 ℃ Lead Solder Temperature – Maximum (10 Second Duration) ShangHai Sino-IC Microelectronics Co., Ltd. 1 SESD5L5V Electrical Parameter Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IT VBR Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Test Current Breakdown Voltage @ IT IF Forward Current VF Forward Voltage @ IF Electrical Characteristics (TA=25℃ unless otherwise noted, VF=0.9V Max. @ IF=10mA for all types) Part Numbers VBR VF IT Min. SESD5L5V VRWM IR Max. C IF Max. (Note1) V mA V µA V mA pF 6.0 1.0 5 1 1.0 10 0.9 1. Capacitance is measured at f=1MHz, VR=0V,TA=25℃. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Typical Characteristics Fig 1. Positive 8kV contact per IEC 61000-4-2-SESD5L5V ShangHai Sino-IC Microelectronics Co., Ltd. Fig 2. Negative 8kV contact per IEC 61000-4-2-SESD5L5V 2 SESD5L5V Figure 3. IEC61000-4-2 Spec Figure 4. Diagram of ESD Test Setup SOD-523 Mechanical Data ShangHai Sino-IC Microelectronics Co., Ltd. 3 SESD5L5V Dim Millimeters INCHES MIN NOM MAX MIN NOM MAX A 1.10 1.20 1.30 0.043 0.047 0.051 B 0.70 0.80 0.90 0.028 0.032 0.035 C 0.50 0.60 0.70 0.020 0.024 0.028 D 0.25 0.30 0.35 0.010 0.012 0.014 J 0.07 0.14 0.20 0.0028 0.0055 0.0079 K 0.15 0.20 0.25 0.006 0.008 0.010 S 1.50 1.60 1.70 0.059 0.063 0.067 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 4