WNM5002-3/TR

WNM5002 WNM5002 Http://www.willsemi.com Small Signal N-Channel, 50V, 0.50A, MOSFET VDS (V) Typical Rds(on) (Ω) D 1.3@ VGS=10V 50 S 1.4@ VGS=4.5V 2.1@ VGS=2.5V G ESD Rating: 2000V HBM SOT-23 D 3 Descriptions The WNM5002 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench 1 G technology and design to provide excellent RDS (ON) 2 S with low gate charge. This device is suitable for use Pin configuration (Top view) in small signal switch. Standard Product WNM5002 is Pb-free and Halogen-free. Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  HBM ESD protection >2 kV  Small package SOT-23 NF2 = Device Code * = Month (A~Z) Marking Applications  Driver: Relay, Solenoid, Lamps,Hammers etc.  Power supply converters circuit  Load/Power Switching for potable device Will Semiconductor Ltd. Order information 1 Device Package Shipping WNM5002-3/TR SOT-23 3000/Reel&Tape Feb.2019 – Rev.1.1 WNM5002 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 50 Gate-Source Voltage VGS ±20 Continuous Drain Current a d Maximum Power Dissipation a d Continuous Drain Current b d Maximum Power Dissipation b d TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V 0.50 0.44 0.40 0.35 0.69 0.53 0.44 0.34 0.47 0.42 0.38 0.33 0.60 0.47 0.39 0.30 A W A W Pulsed Drain Current c IDM 1.2 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 140 180 176 232 165 205 198 261 100 120 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width