BDFN1710A054U

BDFN1710A054U ESD Protection Diode Array »Features ■ 60Watts peak pulse power (tp = 8/20μs) ■ Tiny DFN1710 package ■ Protect up to 4-lines ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=0.35pF typ. I/O to I/O) ■ IEC 61000-4-2 ±30kV contact ±30kV air ■ IEC 61000-4-4 (EFT) 40A (5/50ns) ■ IEC 61000-4-5 (Lightning) 3.5A (8/20μs) »Applications »Mechanical Data ■ USB 2.0 ■ DFN1710 package ■ USB OTG ■ Molding compound flammability rating: UL 94V-0 ■ Micro USB ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant »Schematic & PIN Configuration Pin 1 Pin 2 Pin 3 GND GND 6 5 Pin 4 1 2 3 4 I/O I/O I/O I/O Pin 5、6 Revision 2018 www.born-tw.com 1/4 BDFN1710A054U »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 60 Watts Peak Pulse Current ( tp =8/20μs ) (note1) Ipp 3.5 A VESD 30 30 kV Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) »Electrical Characteristics Parameter Symbol Conditions Reverse Stand-Off Voltage VRWM Reverse Breakdown Voltage VBR IT=1mA Reverse Leakage Current IR VRWM=5V,T=25℃ Peak Pulse Current IPP tp =8/20μs Clamping Voltage VC Junction Capacitance Cj Min 6.0 Typical Units 5.0 V 8.0 V 0.1 μA 0.5 10 IPP=3.5A,tp=8/20μs Max 3.5 A 15 V VR = 0V, f = 1MHz I/O to I/O 0.35 pF VR = 0V, f = 1MHz I/O to GND 0.70 pF »Electrical Parameters (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VC VBR VRWM IT IR I IT R VRWM VBR VC V Breakdown Voltage @ IT Test Current IPP Note:. 8/20μs pulse waveform. Revision 2018 www.born-tw.com 2/4 BDFN1710A054U »Typical Characteristics Fig.2 IEC61000-4-2 +8kV Contact ESD Clamping Waveform Fig.1 IEC61000-4-2 Waveform 1 00% 90% 30ns 10% tr 0.7 to 1ns P P I P fo n t rc e e 60ns 0 30 60 Time (ns) Time (ns) Fig.3 Eye Diagram - USB3.1 at 10Gbps per Fig.4 Insertion Loss S21 - I/O to I/O channel 2 2 .5GHz @ -1dB 0 Insertion Loss (dB) -2 4GHz @ -3dB -4 -6 -8 -10 100k 1M 10M 100M 1G 10G Frequency (Hz) Revision 2018 www.born-tw.com 3/4 BDFN1710A054U »Outline Drawing – DFN1710 A D PIN 1 INDICATOR (LASER MARK) B DIMENSIONS MILLIMETERS DIM MIN NOM MAX E A A1 A2 b D E e e1 L L1 N aaa bbb A SEATING PLANE aaa C A2 C A1 e 0.37 0.40 0.43 0.00 0.02 0.05 (0.13) 0.15 0.20 0.25 1.65 1.70 1.78 0.95 1.00 1.08 0.40 BSC 1.00 BSC 0.20 0.25 0.30 0.45 0.50 0.55 4 0.08 0.10 e/2 1 LxN N E/2 L1x2 e1/2 e1 bx6 D/2 bbb C A B NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS W ELL AS THE TERMINALS. »Marking 5N »Ordering information Order code BDFN1710A054U Revision 2018 Package DFN1710 Base qty 3000 www.born-tw.com Delivery mode Tape and reel 4/4