P6SMB15CAHM4G

P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor FEATURES FEATURES KEY PARAMETERS ● ● ● ● ● ● ● Low profile package Ideal for automated placement Glass passivated junction Built-in strain relief Excellent clamping capability Typical IR less than 1μA above 10V Fast response time: Typically less than 1.0ps from 0 volt to BV min ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5.5 - 185 V VBR (uni-directional) 6.8 - 220 V PPPSM 600 W TJ MAX 150 °C Package DO-214AA (SMB) Configuration Single die APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters TV Monitor MECHANICAL DATA ● Case: DO-214AA (SMB) ● Molding compound meets UL 94V-0 flammability rating ● Moisture sensitivity level: level 1, per J-STD-020 ● Part no. with suffix "H" means AEC-Q101 qualified DO-214AA (SMB) ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: As marked Weight: 0.09 g (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with 10/1000μs waveform (1) Steady state power dissipation at TA=25°C Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (2) Forward Voltage @ IF=50A for Uni-directional only Junction temperature Storage temperature Notes: 1. 2. SYMBOL PART NUMBER UNIT PPPSM 600 W Ptot 3 W IFSM 100 A VF 3.5/5.0 V TJ -55 to +150 °C TSTG -55 to +150 °C Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2 VF=3.5V on P6SMB6.8 - P6SMB91 Devices and VF=5.0V on P6SMB100 - P6SMB220 Device. Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types P6SMB6.8 - types P6SMB220A 2. Electrical characteristics apply in both directions 1 Version:N1701 P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-case thermal resistance RӨJC 10 °C/W Junction-to-ambient thermal resistance RӨJA 55 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Breakdown Device P6SMB6.8 P6SMB6.8A P6SMB7.5 P6SMB7.5A P6SMB8.2 P6SMB8.2A P6SMB9.1 P6SMB9.1A P6SMB10 P6SMB10A P6SMB11 P6SMB11A P6SMB12 P6SMB12A P6SMB13 P6SMB13A P6SMB15 P6SMB15A P6SMB16 P6SMB16A P6SMB18 P6SMB18A P6SMB20 P6SMB20A P6SMB22 P6SMB22A P6SMB24 P6SMB24A P6SMB27 P6SMB27A P6SMB30 P6SMB30A P6SMB33 P6SMB33A P6SMB36 P6SMB36A P6SMB39 P6SMB39A P6SMB43 P6SMB43A P6SMB47 P6SMB47A P6SMB51 Device voltage Test Marking VBR (V) Current Code (Note 1) IT (mA) KDJ KEJ KFJ KGJ KHJ KKJ KLJ KMJ KNJ KPJ KQJ KRJ KSJ KTJ KUJ KVJ KWJ KXJ KYJ KZJ LDJ LEJ LFJ LGJ LHJ LKJ LLJ LMJ LNJ LPJ LQJ LRJ LSJ LTJ LUJ LVJ LWJ LXJ LYJ LZJ MDJ MEJ MFJ Min. 6.12 6.46 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 Max. 7.48 7.14 8.25 7.88 9.02 8.61 10.00 9.55 11.00 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 Stand-Off Voltage @VWM (V) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 41.3 2 Maximum Maximum Maximum Reverse Peak Pulse clamping Leakage Current voltage @VWM IPPM(A) VC@IPP ID(µA) (Note 2) (V) 1000 1000 500 500 200 200 50 50 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 58 60 53 55 50 52 45 47 42 43 38 40 36 37 33 34 28 29 26 28 23 25 21 22 19 20 18 19 16 16.8 14.0 15.0 13.0 13.8 12.0 12.6 11.1 11.6 10.0 10.6 9.2 9.7 8.5 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.5 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 Maximum Temperature Coefficient of VBR(%/°C) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.078 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.102 Version:N1701 P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Device Device Marking Code P6SMB51A P6SMB56 P6SMB56A P6SMB62 P6SMB62A P6SMB68 P6SMB68A P6SMB75 P6SMB75A P6SMB82 P6SMB82A P6SMB91 P6SMB91A P6SMB100 P6SMB100A P6SMB110 P6SMB110A P6SMB120 P6SMB120A P6SMB130 P6SMB130A P6SMB150 P6SMB150A P6SMB160 P6SMB160A P6SMB170 P6SMB170A P6SMB180 P6SMB180A P6SMB200 P6SMB200A P6SMB220 P6SMB220A Notes: MGJ MHJ MKJ MLJ MMJ MNJ MPJ MQJ MRJ MSJ MTJ MUJ MVJ MWJ MXJ MYJ MZJ NDJ NEJ NFJ NGJ NHJ NKJ NLJ NMJ NNJ NPJ NQJ NRJ NSJ NTJ NUJ NVJ Breakdown voltage VBR (V) (Note 1) Min. 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 73.8 77.9 81.9 86.5 90 95 99 105 108 114 117 124 135 143 144 152 153 162 162 171 180 190 198 209 Max. 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 100 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 242 231 Stand-Off Test Current IT (mA) Voltage @VWM (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 64.1 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102.0 105.0 111.0 121.0 128.0 130.0 136.0 138.0 145.0 146.0 154.0 162.0 171.0 175.0 185.0 Maximum Maximum Maximum Maximum Reverse Peak Pulse Leakage Current clamping Temperatur voltage e @VWM IPPM(A) VC@IPP Coefficient ID(µA) (Note 2) (V) of VBR(%/°C) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 8.9 7.8 8.1 7.0 7.4 6.4 6.8 5.8 6.1 5.3 5.5 4.8 5.0 4.3 4.5 3.9 4.1 3.6 3.8 3.3 3.5 2.9 3.0 2.7 2.8 2.5 2.6 2.4 2.5 2.1 2.2 1.8 1.9 70.1 80.5 77.0 89.0 85.0 98.0 92.0 108 103 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 342 328 0.102 0.103 0.103 0.104 0.104 0.104 0.104 0.105 0.105 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent. 2. Surge current waveform per Figure. 3 and derate per Figure. 2. 3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled. 4. For bidirectional use C or CA suffix for types P6SMB6.8 - P6SMB220A. 5. All terms and symbols are consistent with ANSI/IEEE C62.35. 3 Version:N1701 P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. SUFFIX PACKING PACKING CODE CODE SUFFIX(*) R5 P6SMBxxxx (Note 1) H R4 G M4 PACKAGE PACKING SMB 850 / 7" Plastic reel SMB 3,000 / 13" Paper reel SMB 3,000 / 13" Plastic reel Note: 1. "xxxx" defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A) *: Optional available EXAMPLE P/N EXAMPLE P/N PART NO. P6SMB20AHR5G P6SMB20A PART NO. PACKING PACKING CODE SUFFIX CODE SUFFIX H R5 G 4 DESCRIPTION AEC-Q101 qualified Green compound Version:N1701 P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig2. Pulse Derating Curve PPPM, PEAK PULSE POWER, KW 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 10 1 0.1 0.1 1 10 100 1000 10000 PEAK PULSE POWER(PPP) OR CURRENT (IPP) DERATING IN PERCENTAGE (%) Fig1. Peak Pulse Power Rating Curve 125 100 75 50 25 0 0 IPPM, PEAK PULSE CURRENT (%) Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM Rise time tr=10μs to 100% 100 Peak value IPPM 80 Half value-IPPM/2 60 40 10/1000μs, waveform 20 td 0 0 0.5 1 1.5 2 75 100 125 150 175 200 Fig4. Maximum Non-Repetitive Forward Surge Current Unidirectional Only 2.5 3 IFSM, PEAK FORWARD SURGE CURRENT (A) Fig3. Clamping Power Pulse Waveform 120 50 TA, AMBIENT TEMPERATURE (°C) tp, PULSE WIDTH, (μs) 140 25 PERCENT OF RATEDt,PEAK REVERSE VOLTAGE (%) TIME (ms) 100 8.3ms Single Half Sine Wave 10 1 10 100 NUMBER OF CYCLES AT 60 Hz 5 Version:N1701 P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor Fig5. Typical Junction Capacitance CJ, JUNCTION CAPACITANCE (pF) A 10000 VR=0 1000 MEASURED at STAND-OFF VOLTAGE,Vwm 100 f=1.0MHz Vsig=50mVp-p 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) 6 Version:N1701 P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) DIM. Unit (mm) Unit (inch) Min Max Min Max A 1.95 2.20 0.077 0.087 B 4.05 4.60 0.159 0.181 C 3.30 3.95 0.130 0.156 D 1.95 2.65 0.077 0.104 E 0.75 1.60 0.030 0.063 F 5.10 5.60 0.201 0.220 G 0.05 0.20 0.002 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 2.3 0.091 B 2.5 0.098 C 4.3 0.169 D 1.8 0.071 E 6.8 0.268 MARKING DIAGRAM P/N G YW F = Marking Code = Green Compound = Date Code = Factory Code Note: Cathode band for uni-directional products only 7 Version:N1701 P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version:N1701