APM2300CAC-TRG

APM2300CA ® N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , D RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=32mΩ (typ.) @ VGS=4.5V RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • S G Top View of SOT-23 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S N-Channel MOSFET Ordering and Marking Information Package Code A : SOT-23 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APM2300C Assembly Material Handling Code Temperature Range Package Code APM2300C A : 600XX XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 1 www.sinopowersemi.com APM2300CA ® Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 ID * Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation V 6 VGS=10V A 20 1 A 150 °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient RθJA* Unit W °C/W 150 2 Note : *Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Conditions APM2300CA Min. Typ. Max. 20 - - - - 1 - - 30 Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current V GS(th) IGSS R DS(ON) V SD a a V DS=16V, V GS=0V T J=85°C V µA Gate Threshold Voltage V DS=V GS, IDS=250µA 0.5 0.75 1 V Gate Leakage Current V GS=±10V, V DS=0V - ±10 30 µA V GS=10V, IDS=6A 25 V GS=4.5V, IDS=3A - 32 40 V GS=2.5V, IDS=2A - 40 55 V GS=1.8V, IDS=1A - 65 110 ISD=1A, V GS=0V - 0.7 1.3 - 6 8 - 0.7 - - 3 - Drain-Source On-state Resistance Diode Forward Voltage Gate Charge Characteristics Qg V GS=0V, IDS=250µA mΩ V b Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 V DS=10V, V GS=4.5V, IDS=6A 2 nC www.sinopowersemi.com APM2300CA ® Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics (TA = 25°C unless otherwise noted) Test Conditions APM2300CA Unit Min. Typ. Max. - 6 - - 430 - - 110 - - 90 - - 5 10 - 15 28 - 26 48 - 15 28 - 21 - ns - 8 - nC b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=10V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω ISD=6A, dlSD/dt=100A/µs Ω pF ns Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 3 www.sinopowersemi.com APM2300CA ® Typical Operating Characteristics Power Dissipation Drain Current 1.0 7 0.9 6 ID - Drain Current (A) 0.8 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 5 4 3 2 0.2 1 0.1 o TA=25 C,VG=10V o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance R ds (o n) Li m it ID - Drain Current (A) 40 Tj - Junction Temperature (°C) 1ms 1 10ms 100ms 0.1 1s DC o 0.01 20 Tj - Junction Temperature (°C) 100 10 0 TA=25 C 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 100 VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 2 Mounted on 1in pad o RθJA : 150 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com APM2300CA ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 160 20 18 RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 140 VGS=2.5,3,4,5,6,7,8,9,10V 16 14 12 2V 10 8 6 4 1.5V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS=1.8V 120 100 80 60 VGS=2.5V 40 VGS=4.5V 20 VGS=10V 0 3.0 0 4 8 12 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 60 IDS= 250µA 55 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) 20 1.6 ID=6A 50 45 40 35 30 25 20 1.2 1.0 0.8 0.6 0.4 0.2 15 10 16 0 1 2 3 4 5 6 7 8 9 0.0 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com APM2300CA ® Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 20 2.0 VGS = 10V IDS = 6A 10 1.6 1.4 IS - Source Current (A) Normalized On Resistance 1.8 1.2 1.0 0.8 0.6 0.4 o Tj=150 C o Tj=25 C 1 0.2 o RON@Tj=25 C: 25mΩ 0.0 -50 -25 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 800 Frequency=1MHz VGS - Gate - source Voltage (V) C - Capacitance (pF) 600 500 Ciss 400 300 200 Coss Crss 100 0 VDS =10V 9 700 0 4 8 12 16 6 5 4 3 2 1 0 2 4 6 8 10 12 14 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 7 0 20 IDS = 6A 8 6 www.sinopowersemi.com APM2300CA ® Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Switching Time Test Circuit and Waveforms VDS RD VDS DUT 90% VGS RG VDD 10% VGS tp td(on) tr Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 7 td(off) tf www.sinopowersemi.com APM2300CA ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopwer shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising form the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 8 www.sinopowersemi.com APM2300CA ® Package Information D -T- SEATING PLANE < 4 mils e E E1 SEE VIEW A c b 0.25 L GAUGE PLANE SEATING PLANE 0 A1 A A2 e1 VIEW A RECOMMENDED LAND PATTERN SOT-23 S Y M B O L MIN. MAX. MIN. MAX. A - 1.20 - 0.047 A1 0.00 0.08 0.000 0.003 A2 0.70 1.12 0.035 0.044 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 2.70 3.10 0.106 0.122 E 2.60 3.00 0.102 0.118 E1 1.40 1.80 0.055 0.071 e 0.95 BSC e1 0.8 INCHES MILLIMETERS 2.4 0.8 0.037 BSC 1.90 BSC 0.075 BSC L 0.30 0.60 0 0° 8° 0.012 0.024 0° 8° 0.95 UNIT: mm Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 9 www.sinopowersemi.com APM2300CA ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 178.0±2.00 50 MIN. SOT-23 P0 4.0±0.10 P1 4.0±0.10 T1 C 8.4+2.00 13.0+0.50 -0.00 -0.20 P2 D0 2.0±0.05 1.5+0.10 -0.00 d D 1.5 MIN. 20.2 MIN. D1 1.0 MIN. T W E1 8.0±0.30 1.75±0.10 A0 B0 F 3.5±0.05 K0 0.6+0.00 3.20±0.20 3.10±0.20 1.50±0.20 -0.40 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 10 www.sinopowersemi.com APM2300CA ® Taping Direction Information SOT-23 USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.9 - August, 2015 11 www.sinopowersemi.com APM2300CA ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness