9014C

9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor 9015 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Power Dissipation Ptot 450 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA Current Gain Group Collector Base Cutoff Current at VCB = 50 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA Output Capacitance at VCB = 10 V, f = 1 MHz A B C D C C Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 60 100 200 400 - 150 300 600 1000 - ICBO - - 50 nA IEBO - - 50 nA V(BR)CBO 50 - - V V(BR)CEO 45 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.25 V fT - 300 - MHz Cob - - 6 pF SEMTECH ELECTRONICS LTD. ® Dated：11/08/2016 Rev：03 9014 DC current gain versus collector current Collector saturation voltage versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 0.4 100 oC 2 10 VCEsat 0.3 o 25 Tamb= 2 C -50 o C h FE 5 4 3 2 0.2 10 Tamb=100oC 0.1 5 4 3 o 25 C o 2 -50 C 0 10 -1 2 5 1 2 5 10 2 5 1 102 mA 10 -2 10-1 1 10 2 mA 10 IC IC Collector base capacitance, Emitter base capacitance verses reverse bias voltage Collector cutoff current versus ambient temperature mA 10 10 I CBO 10 mA 10 ST 9014 4 3 ST 9014 8 CCBO CEBO 2 CEBO 6 CCBO 10 4 1 Test voltage VCBO: equal to the given maximum value VCES typical maximum 10 -1 0 100 2 Tamb=25 oC 200 oC 0 Tamb 0.1 0.2 0.5 1 2 5 10V VCBO,VEBO SEMTECH ELECTRONICS LTD. ® Dated：11/08/2016 Rev：03 9014 Gain bandwidth product versus collector current Collector current versus base emitter voltage mA 2 10 MHz 10 3 ST 9014 ST 9014 o VCE=5V 7 Tamb=25 C 5 4 3 5 4 VCE=10V 2 3 5V 10 IC fT Tamb=100 oC 5 4 2 2V o 25 C -50 o C 10 2 3 7 2 5 4 1 3 5 4 3 2 2 10 -1 0 1V 0.5 VBE 10 0.1 2 5 1 2 5 10 2 5 100 IC Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 600 500 400 300 200 100 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. ® Dated：11/08/2016 Rev：03