SE9926

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE9926 N-Channel Enhancement Mode Field Effect Transistor Revision:B External Dimensions Features ● VDS = 20V,ID = 6A RDS(ON) < 37.5mΩ @ VGS=2.5V RDS(ON) < 27.5mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Applications ● Battery protection ● Load switch ● Power management Construction ● Silicon epitaxial planer Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage ±10 V Drain Current-Continuous@ VGS ID 6 A Current-Pulsed (Note 1) IDM 25 A Maximum Power Dissipation PD 1.5 W TJ,TSTG -55 To 150 ℃ Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W Electrical characteristics (Ta=25℃) Parameter Symbol Conditions Min. Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 0.8 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V ±80 nA OFF Typ. Max. Unit CHARACTERISTICS V SE9926 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS(th) VDS=VGS,ID=250μA 0.45 0.65 1.2 V VGS=4.5V, ID=4.5A 21 27.5 mΩ VGS=2.5V, ID=3.5A 30 37.5 mΩ RDS(ON) gFS VDS=5V,ID=4.5A 3 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance C lss Coss VDS=8V,VGS=0V, F=1.0MHz Crss 600 PF 330 PF 140 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time 10 20 nS 11 25 nS 35 70 nS tf 30 60 nS Total Gate Charge Qg 10 15 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω VDS=10V,ID=6A, V=4.5V 2.3 nC 3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS ShangHai Sino-IC Microelectronics Co., Ltd. V=0V,I=1.7A 1.2 V 1.7 A 2. SE9926 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ShangHai Sino-IC Microelectronics Co., Ltd. 3. SE9926 ShangHai Sino-IC Microelectronics Co., Ltd. 4. SE9926 ShangHai Sino-IC Microelectronics Co., Ltd. 5. SE9926 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 6.