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PMPB15XP
12 V, single P-channel Trench MOSFET
22 November 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• 1.5 kV ESD protection (human body model)
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-12
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
-
-
-11.8
A
-
15
19
mΩ
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = -4.5 V; ID = -8.2 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
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PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
1
Graphic symbol
D
6
7
2
3
8
5
G
4
S
017aaa257
Transparent top view
DFN2020MD-6 (SOT1220)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PMPB15XP
Description
Version
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1220
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB15XP
1A
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-12
V
VGS
gate-source voltage
-12
12
V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
-11.8
A
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-8.2
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-5.2
A
-
-33
A
-
1.7
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
PMPB15XP
Product data sheet
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22 November 2012
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2 / 14
PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
Tamb = 25 °C; t ≤ 5 s
[1]
Tsp = 25 °C
Min
Max
Unit
-
3.5
W
-
12.5
W
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-1.9
A
Source-drain diode
IS
source current
[1]
Tamb = 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMPB15XP
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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25
© NXP B.V. 2012. All rights reserved
3 / 14
PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
aaa-004171
-102
ID
(A)
Limit RDSon = VDS/ID
tp = 100 µs
-10
tp = 1 ms
tp = 10 ms
-1
DC; Tsp = 25 °C
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
-10-1
-10-2
-10-2
-10-1
-1
-10
-102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
[2]
PMPB15XP
Product data sheet
Min
Typ
Max
Unit
[1]
-
235
270
K/W
[2]
-
67
74
K/W
[2]
-
33
36
K/W
-
5
10
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
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22 November 2012
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4 / 14
PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
017aaa542
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
1
102
10
103
tp (s)
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
10
0.25
0.2
0.1
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
102
10
103
tp (s)
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-12
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.47
-0.68
-0.9
V
IDSS
drain leakage current
VDS = -12 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -12 V; VGS = 0 V; Tj = 150 °C
-
-
-100
µA
PMPB15XP
Product data sheet
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PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IGSS
gate leakage current
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = -4.5 V; ID = -8.2 A; Tj = 25 °C
-
15
19
mΩ
VGS = -4.5 V; ID = -8.2 A; Tj = 150 °C
-
20
25
mΩ
VGS = -2.5 V; ID = -3.9 A; Tj = 25 °C
-
17
20
mΩ
VGS = -1.8 V; ID = -3.9 A; Tj = 25 °C
-
21
33
mΩ
VDS = -10 V; ID = -8.2 A; Tj = 25 °C
-
40
-
S
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
VDS = -6 V; ID = -8.2 A; VGS = -4.5 V;
-
67
100
nC
QGS
gate-source charge
Tj = 25 °C
-
5.5
-
nC
QGD
gate-drain charge
-
7.3
-
nC
Ciss
input capacitance
VDS = -6 V; f = 1 MHz; VGS = 0 V;
-
2875
-
pF
Coss
output capacitance
Tj = 25 °C
-
570
-
pF
Crss
reverse transfer
capacitance
-
530
-
pF
td(on)
turn-on delay time
VDS = -6 V; ID = -8.2 A; VGS = -4.5 V;
-
18
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
90
-
ns
td(off)
turn-off delay time
-
85
-
ns
tf
fall time
-
57
-
ns
-
-0.6
-1.2
V
Source-drain diode
VSD
source-drain voltage
IS = -1.9 A; VGS = 0 V; Tj = 25 °C
aaa-004172
-25
-4.5 V
-2.0 V
ID
(A)
-20
VGS = -1.7 V
ID
(A)
-1.8 V
-10-3
-1.6 V
-15
-1.5 V
-10
aaa-004173
-10-2
-10-4
min
typ
max
-1.4 V
-10-5
-1.3 V
-5
-1.2 V
0
Fig. 6.
0
-1
-2
-3
VDS (V)
-4
-10-6
0.0
-0.4
-0.8
VGS (V)
-1.2
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Subthreshold drain current as a function of
gate-source voltage
PMPB15XP
Product data sheet
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PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
aaa-004174
50
RDSon
(mΩ)
VGS = -1.5 V
40
-1.7 V
-1.6 V
aaa-004175
50
RDSon
(mΩ)
-1.9 V
40
-1.8 V
30
30
-2.0 V
Tj = 150 °C
-2.1 V
20
20
-2.5 V
Tj = 25 °C
-4.5 V
10
0
10
0
-5
-10
-15
-20
ID (A)
0
-25
Tj = 25 °C
Fig. 8.
0
-1
-2
-3
-4
VGS (V)
-5
ID = -8 A
Drain-source on-state resistance as a function
of drain current; typical values
Fig. 9.
aaa-004176
-25
Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-004177
1.4
ID
(A)
a
-20
1.2
-15
1.0
-10
Tj = 150 °C
-5
0
0.0
-0.5
-1.0
0.8
Tj = 25 °C
-1.5
VGS (V)
0.6
-60
-2.0
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PMPB15XP
Product data sheet
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
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PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
aaa-004178
-1.2
aaa-004179
104
VGS(th)
(V)
Ciss
C
(pF)
max
-0.8
typ
Coss
103
min
-0.4
0.0
-60
0
Crss
60
120
Tj (°C)
102
-10-1
180
ID = -0.25 mA; VDS = VGS
-1
-10
VDS (V)
-102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
aaa-004180
-4.5
VDS
VGS
(V)
ID
-3.0
VGS(pl)
VGS(th)
VGS
-1.5
QGS1
QGS2
QGS
QGD
QG(tot)
017aaa137
0.0
0
5
10
15
20
25
Fig. 15. Gate charge waveform definitions
30
35
QG (nC)
ID = -8 A; VDS = -6 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
PMPB15XP
Product data sheet
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PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
aaa-004181
-2.0
IS
(A)
-1.5
-1.0
Tj = 150 °C
-0.5
0.0
0.0
-0.2
Tj = 25 °C
-0.4
-0.6
VDS (V)
-0.8
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
9. Package outline
0.51
0.61
0.2
0.3
1.9
2.1
1.0
1.2
0.2
0.3
3
4
2
5
1
6
1.1
1.3
1.9
2.1
Dimensions in mm
0.25
0.35
0.65
12-04-30
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
PMPB15XP
Product data sheet
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PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
10. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
0.33 (6×)
SOT1220
0.76
0.43 (6×)
0.66
0.53 (6×)
0.56
0.25 0.35 0.45
0.775
0.65
2.06
0.285
1.25
1.35
0.35 (6×)
1.05
0.25 (6×)
0.65
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
PMPB15XP
Product data sheet
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PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMPB15XP v.3
20121122
Product data sheet
-
PMPB15XP v.2
Modifications:
•
PMPB15XP v.2
20120719
Product data sheet
-
PMPB15XP v.1
PMPB15XP v.1
20120706
Preliminary data sheet
-
-
PMPB15XP
Product data sheet
Table 7 "Characteristics": RDSon at VGS = -1.8 V corrected.
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PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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PMPB15XP
Product data sheet
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PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
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customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TOPTriac, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMPB15XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 November 2012
© NXP B.V. 2012. All rights reserved
13 / 14
PMPB15XP
NXP Semiconductors
12 V, single P-channel Trench MOSFET
13. Contents
1
1.1
1.2
1.3
1.4
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
2
Pinning information ............................................... 2
3
Ordering information ............................................. 2
4
Marking ................................................................... 2
5
Limiting values .......................................................2
6
Thermal characteristics .........................................4
7
Characteristics ....................................................... 5
8
Test information ..................................................... 9
9
Package outline ..................................................... 9
10
Soldering .............................................................. 10
11
Revision history ................................................... 11
12
12.1
12.2
12.3
12.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 November 2012
PMPB15XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 November 2012
© NXP B.V. 2012. All rights reserved
14 / 14
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