GP2301
20V P-Channel MOSFET
Product Summary
V(BR)DSS
-20V
SOT-23
RDS(on)MAX
ID
110mΩ@-4.5V
-2.3A
140mΩ@-2.5V
Feature
TrenchFET Power MOSFET
Excellent RDS(on) and Low Gate Charge
Application
DC/DC Converter
Load Switch for Portable Devices
Battery Switch
MARKING:
Schematic diagram
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current
ID
-2.3
A
Pulsed Drain Current (t=300µs)
IDM
-10
A
Power Dissipation
PD
0.35
W
RθJA
357
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~ +150
℃
Thermal Resistance from Junction to Ambient
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1
GP2301
MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-20V,VGS = 0V
-1
µA
Gate-body leakage current
IGSS
VGS =±8V, VDS = 0V
±100
nA
-0.7
-1
V
VGS =-4.5V, ID =-3A
70
110
VGS =-2.5V, ID =-2A
110
140
Gate threshold voltage
VGS(th)
Drain-source on-resistance
a
RDS(on)
a
Forward tranconductance
Dynamic characteristics
gFS
VDS =VGS, ID =-250µA
VDS =-5V, ID =-2A
-20
-0.4
V
5
mΩ
S
b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.3
Turn-on delay time
td(on)
11
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
405
VDS =-10V,VGS =0V,f =1MHz
75
pF
55
f =1MHz
3.3
VDS =-10V,VGS =-2.5V,ID=-3A
12
0.7
VDD=-10V,VGEN=-4.5V,ID=-1A
35
RL=10Ω,RGEN=1Ω
30
tf
Ω
6
nC
ns
10
Source-Drain Diode characteristics
Diode forward current
Diode pulsed forward current
Diode Forward voltage
IS
a
TC=25℃
ISM
VDS
VGS =0V, IS=-1.3A
-2.3
A
-10
A
-1.2
V
Notes :
a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.
b.Guaranteed by design, not subject to production testing.
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2
GP2301
Typical Electrical and Thermal Characteristics
Output Characteristics
Transfer Characteristics
-10
-10
Pulsed
Pulsed
VGS=-2.5V
-8
Ta=25℃
DRAIN CURRENT ID (A)
-8
DRAIN CURRENT ID (A)
VDS=-3V
VGS=-3V,-4V,-5V
Ta=25℃
-6
VGS=-2V
-4
-6
Ta=100℃
-4
-2
-2
VGS=-1.5V
0
0.0
0
0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE VDS (V)
-4
-0.5
-1.0
-1.5
-2.0
-2.5
RDS(ON) ID
150
RDS(ON) - VGS
500
Ta=25℃
Pulsed
Pulsed
400
ON-RESISTANCE RDS(ON) (m)
ON-RESISTANCE RDS(ON) (m)
VGS=-2.5V
100
VGS=-4.5V
50
ID=-2.6A
300
Ta=100℃
200
100
0
-0.5
-3.0
GATE TO SOURCE VOLTAGE VGS (V)
Ta=25℃
0
-1.0
-1.5
-2.0
DRAIN CURRENT ID (A)
-2.5
0
-3.0
-1
-2
-3
-4
GATE TO SOURCE VOLTAGE VGS (V)
-5
Threshold Voltage
IS - VSD
-3
-1.2
Pulsed
THRESHOLD VOLTAGE VTH (V)
SOURCE CURRENT IS (A)
-1.0
-1
Ta=100℃
Ta=25℃
-0.8
ID=-250uA
-0.6
-0.4
-0.1
0.0
-0.2
25
-0.4
-0.8
-1.2
-1.6
SOURCE TO DRAIN VOLTAGE VSD (V)
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-2.0
50
75
100
125
150
JUNCTION TEMPERATURE Tj (℃)
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3
GP2301
C
A1
A
A2
SOT-23 Package Information
L
L1
D
E
E1
b
e
e1
Symbol
Dimensions In Millimeters
Min.
Max.
A
0.90
1.15
A1
0.00
0.10
A2
0.90
1.05
b
0.30
0.50
c
0.08
0.15
D
2.80
3.00
E
1.20
1.40
E1
2.25
2.55
e
e1
0.95 REF.
1.80
L
L1
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2.00
0.55 REF.
0.30
Shanghai GreenPower Electronic Co.Ltd.
0.50
4
GP2301
SOT-23 Tape and Reel
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5
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