Nanya Technology Corp.
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
Features
Signal Integrity
JEDEC DDR3 Compliant
- Configurable DS for system compatibility
- 8n Prefetch Architecture
- Differential Clock(CK/) and Data Strobe(DQS/)
- Configurable On-Die Termination
- Double-data rate on DQs, DQS and DM
- ZQ Calibration for DS/ODT impedance accuracy via
external ZQ pad (240 ohm ± 1%)
Data Integrity
Signal Synchronization
- Auto Self Refresh (ASR) by DRAM built-in TS
- Write Leveling via MR settings 6
- Auto Refresh and Self Refresh Modes
- Read Leveling via MPR
Power Saving Mode
Interface and Power Supply
- Partial Array Self Refresh (PASR)
1
- SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V)
3
- Power Down Mode
- SSTL_135 for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)
Options
Speed Grade (CL-TRCD-TRP)
2
Temperature Range (Tc)
4
- Commercial Grade = 0℃~95℃
- Quasi Industrial Grade (-T) = -40℃~95℃
- Industrial Grade (-I) = -40℃~95℃
- Automotive Grade 2 (-H) = -40℃~105℃
- Automotive Grade 3 (-A) = -40℃~95℃
- 2133 Mbps / 14-14-14
- 1866 Mbps / 13-13-13
- 1600 Mbps / 11-11-11
Programmable Functions
CAS Latency (6/7/8/9/10/11/13/14)
Self RefreshTemperature Range(Normal/Extended)
CAS Write Latency (5/6/7/8/9/10)
Output Driver Impedance (34/40)
Additive Latency (0/CL-1/CL-2)
On-Die Termination of Rtt_Nom(20/30/40/60/120)
Write Recovery Time (5/6/7/8/10/12/14/16)
On-Die Termination of Rtt_WR(60/120)
Burst Type (Sequential/Interleaved)
Precharge Power Down (slow/fast)
Burst Length (BL8/BC4/BC4 or 8 on the fly)
Packages / Density Information
Density and Addressing
Lead-free RoHS compliance and Halogen-free
2Gb
Length x Width
Ball pitch
(Org. / Package)
(mm)
(mm)
Organization
256Mb x 8
Bank Address
BA0 – BA2
Auto precharge
256Mbx8
128Mbx16
78-ball
VFBGA
96-ball
VFBGA
8.00 x 10.50
8.00 x 13.00
0.80
0.80
128Mb x 16
BA0 – BA2
A10 / AP
A10 / AP
BL switch on the fly
A12 /
A12 /
Row Address
A0 – A14
A0 – A13
Column Address
A0 – A9
A0 – A9
Page Size
1KB
2KB
tREFI(us)
tRFC(ns)
4
Tc85℃:3.9
5
160ns
NOTE 1 Default state of PASR is disabed. This is enabled by using an electrical fuse. Please contact with NTC for the demand.
NOTE 2 Please refer to ordering information for the detail.
NOTE 3 1.35V DDR3L are backward compatible to 1.5V DDR3 parts. Please refer to page 5 operating frequency table.1.35V DDR3L-RS parts are exceptional
and unallowable to be compatible to 1.35V DDR3L and 1.5V DDR3 parts.
NOTE 4 If TC exceeds 85°C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9us interval refresh rate. Extended SRT or ASR must be enabled.
NOTE 5 Violating tRFC specification will induce malfunction.
NOTE 6 Only Support prime DQ’s feedback for each byte lane.
Version 1.9
02/2017
1
NTC has the rights to change any specifications or product without notification.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Fundamental AC Specifications – Core Timing
DDR3-2133, DDR3(L)-1866, DDR3(L)-1600 and DDR3(L)-1333
DDR3-2133
DDR3(L)-1866
DDR3(L)-1600
14-14-14
13-13-13
11-11-11
DDR3(L)-1333
Speed Bins
9-9-9
10-10-10
Unit
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
tAA
13.09
20
13.91
20
13.75
20
13.5
20
15
20
ns
tRCD
13.09
-
13.91
-
13.75
-
13.5
-
15
-
ns
tRP
13.09
-
13.91
-
13.75
-
13.5
-
15
-
ns
tRC
46.09
-
47.91
-
48.75
-
49.5
-
51
-
ns
tRAS
33
9*tREFI
34
9*tREFI
35
9*tREFI
36
9*tREFI
36
9*tREFI
ns
DDR3(L)-1066 and DDR3-800
DDR3(L)-1066
DDR3-800
Speed Bins
7-7-7
Version 1.9
02/2017
8-8-8
6-6-6
Unit
Parameter
Min
Max
Min
Max
Min
Max
tAA
13.125
20
15
20
15
20
ns
tRCD
13.125
-
15
-
15
-
ns
tRP
13.125
-
15
-
15
-
ns
tRC
50.625
-
52.5
-
52.5
-
ns
tRAS
37.5
9*tREFI
37.5
9*tREFI
37.5
9*tREFI
ns
2
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Descriptions
The 2Gb Double-Data-Rate-3 (DDR3(L)) is double data rate architecture to achieve high-speed operation. It is
internally configured as an eight bank DRAMs.
The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices. These
synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general
applications.
The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address
inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross
point of differential clocks (CK rising and falling). All I/Os are synchronized with a single ended DQS or
differential DQS pair in a source synchronous fashion.
These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in
BGA packages.
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02/2017
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Ordering Information
Speed
Organization
Part Number
Package
Clock (MHz)
Data Rate (Mb/s)
CL-TRCD-TRP
DDR3(L) Commercial Grade
256M x 8
128M x 16
NT5CB256M8IN-DI
NT5CB256M8IN-EK1
NT5CB256M8IN-FL
NT5CC256M8IN-DI
NT5CC256M8IN-EK
NT5CC256M8IN-DIB
NT5CB128M16IP-DI
NT5CB128M16IP-EK1
NT5CB128M16IP-FL
NT5CC128M16IP-DI
NT5CC128M16IP-EK
NT5CC128M16IP-DIB
78-Ball
96-Ball
800
DDR3-1600
11-11-11
933
DDR3-1866
13-13-13
1066
DDR3-2133
14-14-14
800
DDR3L-16003
11-11-11
933
DDR3L-18663
13-13-13
800
DDR3L-16003
11-11-11
800
DDR3-1600
11-11-11
933
DDR3-1866
13-13-13
1066
DDR3-2133
14-14-14
800
DDR3L-16003
11-11-11
933
DDR3L-18663
13-13-13
800
DDR3L-16003
11-11-11
DDR3(L) Industrial Grade
256M x 8
128M x 16
NT5CB256M8IN-DII
NT5CB256M8IN-EKI
NT5CC256M8IN-DII
NT5CC256M8IN-EKI
NT5CB128M16IP-DII
NT5CB128M16IP-EKI
NT5CC128M16IP-DII
NT5CC128M16IP-EKI
78-Ball
96-Ball
800
DDR3-1600
11-11-11
933
DDR3-1866
13-13-13
800
DDR3L-16003
11-11-11
933
3
DDR3L-1866
13-13-13
800
DDR3-1600
11-11-11
933
DDR3-1866
13-13-13
800
DDR3L-16003
11-11-11
933
DDR3L-18663
13-13-13
DDR3(L) Quasi Industrial Grade
256M x 8
128M x 16
NT5CB256M8IN-DIT
NT5CB256M8IN-EKT
NT5CC256M8IN-DIT
NT5CC256M8IN-EKT
NT5CB128M16IP-DIT
NT5CB128M16IP-EKT
NT5CC128M16IP-DIT
NT5CC128M16IP-EKT
78-Ball
96-Ball
800
DDR3-1600
11-11-11
933
DDR3-1866
13-13-13
800
DDR3L-16003
11-11-11
933
DDR3L-18663
13-13-13
800
DDR3-1600
11-11-11
933
DDR3-1866
13-13-13
800
DDR3L-16003
11-11-11
933
DDR3L-18663
13-13-13
DDR3-1600
11-11-11
DDR3(L) Automotive Grade 2
256M x 8
128M x 16
NT5CB256M8IN-DIH
NT5CC256M8IN-DIH
NT5CB128M16IP-DIH
NT5CC128M16IP-DIH
78-Ball
96-Ball
800
128M x 16
NT5CB256M8IN-DIA
NT5CC256M8IN-DIA
NT5CB128M16IP-DIA
NT5CC128M16IP-DIA
78-Ball
96-Ball
3
800
DDR3L-1600
11-11-11
800
DDR3-1600
11-11-11
800
DDR3L-16003
11-11-11
800
DDR3-1600
11-11-11
800
DDR3L-16003
11-11-11
800
DDR3-1600
11-11-11
800
DDR3L-16003
11-11-11
DDR3(L) Automotive Grade 3
256M x 8
2
2
NOTE 1 Mainstream Product.
NOTE 2 Please confirm with NTC for the available schedule.
NOTE 3 1.35V DDR3L are backward compatible to 1.5V DDR3 parts. Please refer to page 5 operating frequency
table.1.35V DDR3L-RS parts are exceptional and unallowable to be compatible to 1.35V DDR3L and 1.5V
DDR3 parts.
Version 1.9
02/2017
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
NANYA Component Part Numbering Guide
NT
5C
B
256M8
I
N
DI
Special Type Option
NA = Commercial Grade
T = Quasi industrial Grade
I = Industrial Grade
H = Automotive Grade2
A = Automotive Grade3
B = Reduced Standby
NANYA
Technology
Product Family
5C = DDR3 SDRAM
Speed
DDR3 SDRAM
DI = DDR3 - 1600 11-11-11
EK = DDR3 - 1866 13-13-13
FL = DDR3- 2133 14-14-14
Interface & Power ( VDD & VDDQ)
B = SSTL_ 15 (1.5V , 1.5V)
C = SSTL_135 (1.35V , 1.35V)
Organization (Depth , Width)
128M 16 = 256M 8 = 2Gb
Note: M= Mono
Package Code
RoHS + Halogen Free
N=78 -Ball VFBGA
P=96 -Ball VFBGA
Device Version
I = 9 th Version
Operating frequency
The backward compatibility of each speed grade is listed in a table below. If an application operates at specific frequency
which is not defined herein but within the highest and the lowest supporting grade, then the comparative loose
specifications to DRAM must be adopted from the neighboring defined speed bins. Pls confirm notices with NTC for
operating frequency slower than defined speed bins.
For instance, DRAMs of -FL grade can support not only DDR3-2133 but also low speed bin like DDR3-1866 or DDR3-1600.
In case AP cooperates with DRAM of -FL grade and operates at undefined DDR3-1800 condition, then CL must be set to
13 which is a comparative looser spec than 11. Do the same way for the rest parameters.
Frequency
[Mbps]
CL[nCK]
14
VDD[V]
1.5
13
1.35
11
1.5
DDR3-FL
2133
DDR3-EK
N/A
DDR3-DI
N/A
N/A
DDR3L-EK
N/A
1866
DDR3L-DI
N/A
N/A
Version 1.9
02/2017
1866
N/A
1866
1.35
1.5
1.35
1.5
7 or 8
1.35
1.5
6
1.5
1600
1333
1066
800
1600
1333
1066
800
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
N/A
5
9 or 10
1600
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Ball Configuration – 78 Ball VFBGA Package (X8)
See the balls through the package
A
B
C
D
E
F
G
H
J
K
L
M
N
1
VSS
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
VDD
VSS
1
2
VDD
VSSQ
DQ2
DQ6
VDDQ
VSS
VDD
3
NC
DQ0
DQS
4 5 6
DQ4
RA
A
WE
BA0
A3
A5
A7
BA2
A0
A2
A9
A13
3
REET
2
7
NU,T
DM,TDQS
DQ1
VDD
DQ7
CK
4 5 6
A10/AP
NC
A12,
A1
A11
A14
7
8
VSS
VSSQ
DQ3
VSS
DQ5
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
8
9
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
9
A
B
C
D
E
F
G
H
J
K
L
M
N
Unit: mm
* BSC (Basic Spacing between Center)
Version 1.9
02/2017
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Ball Configuration – 96 Ball VFBGA Package (X16)
See the balls through the package
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
1
VDDQ
VSSQ
VDDQ
VSSQ
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
VDD
VSS
1
2
DQU5
VDD
DQU3
VDDQ
VSSQ
DQL2
DQL6
VDDQ
VSS
VDD
3
DQU7
VSS
DQU1
DMU
DQL0
DQSL
4 5 6
U
DQSU
DQU0
DML
DQL1
VDD
DQL7
CK
L
DQL4
RA
A
WE
BA0
A3
A5
A7
BA2
A0
A2
A9
A13
3
REET
2
7
DQU4
4 5 6
A10/AP
NC
A12,
A1
A11
NC
7
8
VDDQ
DQU6
DQU2
VSSQ
VSSQ
DQL3
VSS
DQL5
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
8
9
VSS
VSSQ
VDDQ
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
9
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
Unit: mm
* BSC (Basic Spacing between Center)
Version 1.9
02/2017
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Ball Descriptions
Symbol
Type
Input
Function
Clock: CK and are differential clock inputs. All address and control input signals are sampled
on the crossing of the positive edge of CK and negative edge of .
Clock Enable: CKE high activates, and CKE low deactivates, internal clock signals and device
input buffers and output drivers. Taking CKE low provides Precharge Power-Down and
Self-Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is
CKE
Input
asynchronous for Self-Refresh exit. After VREF has become stable during the power on and
initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper
self-refresh entry and exit, VREF must maintain to this input. CKE must be maintained high
throughout read and write accesses. Input buffers, excluding CK, , ODT and CKE are disabled
during Power Down. Input buffers, excluding CKE, are disabled during Self-Refresh.
Chip Select: All commands are masked when is registered high. provides for external
Input
rank selection on systems with multiple memory ranks. is considered part of the command
code.
RA, A, WE
Input
For x8,
Command Inputs: RA, A and WE (along with ) define the command being entered.
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is
DM
Input
For x16,
sampled HIGH coincident with that input data during a Write access. DM is sampled on both
edges of DQS. For x8 device, the function of DM or TDQS/T is enabled by Mode Register
A11 setting in MR1.
DMU, DML
Bank Address Inputs: BA0, BA1, and BA2 define to which bank an Active, Read, Write or
BA0 - BA2
Input
Precharge command is being applied. Bank address also determines which mode register is to be
accessed during a MRS cycle.
Auto-Precharge: A10 is sampled during Read/Write commands to determine whether
Autoprecharge should be performed to the accessed bank after the Read/Write operation. (HIGH:
A10 / AP
Input
Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a Precharge command to
determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only
one bank is to be precharged, the bank is selected by bank addresses.
For x8,
Address Inputs: Provide the row address for Activate commands and the column address for
A0 – A14
Input
Read/Write commands to select one location out of the memory array in the respective bank.
For x16,
(A10/AP and A12/ have additional function as below.) The address inputs also provide the
A0 – A13
op-code during Mode Register Set commands.
A12/
Input
Burst Chop: A12/is sampled during Read and Write commands to determine if burst chop
(on the fly) will be performed. (HIGH - no burst chop; LOW - burst chopped).
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the
ODT
Input
DDR3 SDRAM. When enabled, ODT is applied to each DQ, DQS, and DM/TDQS, NU/T
(when TDQS is enabled via Mode Register A11=1 in MR1) signal for x8 configurations. The ODT
pin will be ignored if Mode-registers, MR1and MR2, are programmed to disable RTT.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Symbol
Type
REET
Input
Function
Active Low Asynchronous Reset: Reset is active when REET is LOW, and inactive when
REET is HIGH. REET must be HIGH during normal operation. REET is a CMOS rail to rail
signal with DC high and low at 80% and 20% of VDD, i.e. 1.20V for DC high and 0.30V.
Data Inputs/Output: Bi-directional data bus. DQ0 is the prime DQ in a low byte lane of
DQ
Input/output
x4/x8/x16 configuration and DQ8 is the prime DQ in a high byte lane of x16 configuration for write
leveling.
Data Strobe: output with read data, input with write data. Edge aligned with read data, centered
For x8,
with write data. The data strobes DQS, DQSL, DQSU are paired with differential signals ,
DQS, ()
For x16,
Input/output
L, U, respectively, to provide differential pair signaling to the system during both reads
and writes. DDR3 SDRAM supports differential data strobe only and does not support
DQSL,(L),
single-ended.
DQSU,(U)
Termination Data Strobe: TDQS/T is applicable for X8 DRAMs only. When enabled via
Mode Register A11=1 in MR1, DRAM will enable the same termination resistance function on
For x8,
Output
TDQS, (T)
TDQS/T that is applied to DQS/. When disabled via mode register A11=0 in MR1,
DM/T will provide the data mask function and T is not used. x16 DRAMs must disable the
TDQS function via mode register A11=0 in MR1.
NC
-
VDDQ
Supply
DQ Power Supply: 1.35V -0.067V/+0.1V or 1.5V ± 0.075V
VDD
Supply
Power Supply: 1.35V -0.067V/+0.1V or 1.5V ± 0.075V
VSSQ
Supply
DQ Ground
VSS
Supply
Ground
VREFCA
Supply
Reference voltage for CA
VREFDQ
Supply
Reference voltage for DQ
ZQ
Supply
Reference pin for ZQ calibration.
No Connect: No internal electrical connection is present.
Notes:
1. Input only pins (BA0-BA2, A0-A14, RA, A, WE, , CKE, ODT, and REET) do not supply termination.
2. The signal may show up in a different symbol but it indicates the same thing. e.g., /CK = CK# = = CKb, /DQS = DQS# =
= DQSb, /CS = CS# = = CSb.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Simplified State Diagram
Power
Applied
Power
ON
Reset
Procedure
MRS, MPR,
Write
Levelizing
Initialization
Self Refresh
SRE
From any
State
ZQCL
RESET
MRS
SRX
ZQCL
ZQCS
ZQ Calibration
Idle
Refreshing
REF
PDX
ACT
PDE
Precharge
Power
Down
Activating
Active
Power
Down
PDE
PDX
Bank
Active
Write
Read
Read
Write
Read
Writing
Reading
Write
Write A
Automatic
Sequence
Read A
Write A
Read A
Read A
Write A
Command
Sequence
PRE,
PREA
Writing
PRE,
PREA
Reading
PRE,
PREA
Precharging
State Diagram Command Definitions
Version 1.9
02/2017
Abbr.
Function
Abbr.
Function
Abbr.
Function
ACT
Active
Read
RD, RDS4, RDS8
PDE
Enter Power-down
PRE
Precharge
Read A
RDA, RDAS4, RDAS8
PDX
Exit Power-down
PREA
Precharge All
Write
WR, WRS4, WRS8
SRE
Self-Refresh entry
MRS
Mode Register Set
Write A
WRA, WRAS4, WRAS8
SRX
Self-Refresh exit
REF
Refresh
RESET
Start RESET Procedure
MPR
Multi-Purpose Register
ZQCL
ZQ Calibration Long
ZQCS
ZQ Calibration Short
10
-
-
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Basic Functionality
The DDR3(L) SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM.
The DDR3(L) SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n prefetch architecture is
combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write
operation for the DDR3(L) SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and
eight corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.
Read and write operation to the DDR3(L) SDRAM are burst oriented, start at a selected location, and continue for a burst
length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration of an Active
command, which is then followed by a Read or Write command. The address bits registered coincident with the Active
command are used to select the bank and row to be activated (BA0-BA2 select the bank; A0-A14 select the row). The
address bit registered coincident with the Read or Write command are used to select the starting column location for the
burst operation, determine if the auto precharge command is to be issued (via A10), and select BC4 or BL8 mode ‘on the
fly’ (via A12) if enabled in the mode register.
Prior to normal operation, the DDR3(L) SDRAM must be powered up and initialized in a predefined manner. The following
sections provide detailed information covering device reset and initialization, register definition, command descriptions
and device operation.
RESET and Initialization Procedure
Power-up Initialization sequence
The Following sequence is required for POWER UP and Initialization
1. Apply power (REET is recommended to be maintained below 0.2 x VDD, all other inputs may be undefined). REET
needs to be maintained for minimum 200μs with stable power. CKE is pulled “Low” anytime before REETbeing
de-asserted (min. time 10ns). The power voltage ramp time between 300mV to VDD min must be no greater than 200ms;
and during the ramp, VDD>VDDQ and (VDD-VDDQ) =2.5ns)
6 (2.5ns>=tCK(avg)>=1.875ns)
7 (1.875ns>=tCK(avg)>=1.5ns)
8 (1.5ns>=tCK(avg)>=1.25ns)
9 (1.25ns>=tCK(avg)>=1.07ns)
10 (1.07ns>=tCK(avg)>=0.935ns)
RFU
RFU
* 1 : Default state of PASR is disabed. This is enabled by using an electrical fuse. Please contact with NTC for the demand.
* 2 : BA2, A5, A8, A11 ~ A15 are RFU and must be programmed to 0 during MRS.
* 3 : The Rtt_WR value can be applied during writes even when Rtt_Nom is disabled. During write leveling, Dynamic ODT is
not available.
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
CAS Write Latency (CWL)
The CAS Write Latency is defined by MR2 (bits A3-A5) shown in MR2. CAS Write Latency is the delay, in clock cycles,
between the internal Write command and the availability of the first bit of input data. DDR3(L) DRAM does not support any
half clock latencies. The overall Write Latency (WL) is defined as Additive Latency (AL) + CAS Write Latency (CWL);
WL=AL+CWL.
Auto Self-Refresh (ASR) and Self-Refresh Temperature (SRT)
DDR3(L) SDRAM must support Self-Refresh operation at all supported temperatures. Applications requiring Self-Refresh
operation in the Extended Temperature Range must use the ASR function or program the SRT bit appropriately.
Optional in DDR3(L) SDRAM: Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if
DDR3(L) SDRAM devices support the following options or requirements referred to in this material. For more details refer to
“Extended Temperature Usage”. DDR3(L) SDRAMs must support Self-Refresh operation at all supported temperatures.
Applications requiring Self-Refresh operation in the Extended Temperature Range must use the optional ASR function or
program the SRT bit appropriately.
Dynamic ODT (Rtt_WR)
DDR3(L) SDRAM introduces a new feature “Dynamic ODT”. In certain application cases and to further enhance signal
integrity on the data bus, it is desirable that the termination strength of the DDR3(L) SDRAM can be changed without
issuing an MRS command. MR2 Register locations A9 and A10 configure the Dynamic ODT settings. In Write leveling
mode, only RTT_Nom is available. For details on Dynamic ODT operation, refer to “Dynamic ODT”.
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Mode Register MR3
The Mode Register MR3 controls Multi-purpose registers. The Mode Register 3 is written by asserting low on , RA, A,
WE high on BA1 and BA0, and low on BA2 while controlling the states of address pins according to the table below.
MR3 Definition
BA2
BA1
BA0
A15-A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
0
MR select
0
A2
0
1
BA1
0
0
1
1
BA0
0
1
0
1
MPR
Normal operation
Dataflow from MPR
MR select
MR0
MR1
MR2
MR3
MPR
A1
0
0
1
1
A0
0
1
0
1
MPR Loc
MPR Loc
Predefined pattern
Reserved
Reserved
Reserved
* 1 : BA2, A3 - A15 are RFU and must be programmed to 0 during MRS.
* 2 : The predefined pattern will be used for read synchronization.
* 3 : When MPR control is set for normal operation (MR3 A[2] = 0) then MR3 A[1:0] will be ignored.
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Multi-Purpose Register (MPR)
The Multi Purpose Register (MPR) function is used to Read out a predefined system timing calibration bit sequence.
Fig. 1: MPR Block Diagram
To enable the MPR, a MODE Register Set (MRS) command must be issued to MR3 Register with bit A2 = 1, prior to issuing
the MRS command, all banks must be in the idle state (all banks precharged and tRP met). Once the MPR is enabled, any
subsequent RD or RDA commands will be redirected to the Multi Purpose Register. The resulting operation, when a RD or
RDA command is issued, is defined by MR3 bits A[1:0] when the MPR is enabled as shown. When the MPR is enabled,
only RD or RDA commands are allowed until a subsequent MRS command is issued with the MPR disabled (MR3 bit A2 =
0). Note that in MPR mode RDA has the same functionality as a READ command which means the auto precharge part of
RDA is ignored. Power-Down mode, Self-Refresh and any other non-RD/RDA command is not allowed during MPR enable
mode. The RESET function is supported during MPR enable mode.
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MPR MR3 Register Definition
MR3 A[2]
MR3 A[1:0]
MPR
MPR-Loc
Function
Normal operation, no MPR transaction.
0b
don't care (0b or 1b)
All subsequent Reads will come from DRAM array.
All subsequent Write will go to DRAM array.
1b
See MR3 Table
Enable MPR mode, subsequent RD/RDA commands defined by MR3 A[1:0].
MPR Functional Description
• One bit wide logical interface via all DQ pins during READ operation.
• Register Read on x8:
• DQ[0] drives information from MPR.
• DQ[7:1] either drive the same information as DQ [0], or they drive 0b.
• Register Read on x16:
• DQL[0] and DQU[0] drive information from MPR.
• DQL[7:1] and DQU[7:1] either drive the same information as DQL [0], or they drive 0b.
• Addressing during for Multi Purpose Register reads for all MPR agents:
• BA [2:0]: don’t care
• A[1:0]: A[1:0] must be equal to ‘00’b. Data read burst order in nibble is fixed
• A[2]: For BL=8, A[2] must be equal to 0b, burst order is fixed to [0,1,2,3,4,5,6,7], *) For Burst Chop 4 cases, the burst
order is switched on nibble base A [2]=0b, Burst order: 0,1,2,3 *)
A[2]=1b, Burst order: 4,5,6,7 *)
• A[9:3]: don’t care
• A10/AP: don’t care
• A12/BC: Selects burst chop mode on-the-fly, if enabled within MR0.
• A11, A13... (if available): don’t care
• Regular interface functionality during register reads:
• Support two Burst Ordering which are switched with A2 and A[1:0]=00b.
• Support of read burst chop (MRS and on-the-fly via A12/BC)
• All other address bits (remaining column address bits including A10, all bank address bits) will be ignored by the DDR3(L)
SDRAM.
• Regular read latencies and AC timings apply.
• DLL must be locked prior to MPR Reads.
NOTE: *Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
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MPR MR3 Register Definition
MR3 A[2]
MR3 A[1:0]
Function
Burst Length
Read Address
Burst Order
A[2:0]
and Data Pattern
000b
BL8
Read Predefined
1b
00b
Pattern for System
Burst order 0,1,2,3,4,5,6,7
Pre-defined Data Pattern [0,1,0,1,0,1,0,1]
000b
BC4
Burst order 0,1,2,3
Pre-defined Data Pattern [0,1,0,1]
Calibration
Burst order 4,5,6,7
BC4
100b
BL8
000b
Burst order 0,1,2,3,4,5,6,7
BC4
000b
Burst order 0,1,2,3
BC4
100b
Burst order 4,5,6,7
BL8
000b
Burst order 0,1,2,3,4,5,6,7
BC4
000b
Burst order 0,1,2,3
BC4
100b
Burst order 4,5,6,7
BL8
000b
Burst order 0,1,2,3,4,5,6,7
BC4
000b
Burst order 0,1,2,3
BC4
100b
Burst order 4,5,6,7
Pre-defined Data Pattern [0,1,0,1]
1b
1b
1b
01b
10b
11b
RFU
RFU
RFU
NOTE: Burst order bit 0 is assigned to LSB and the burst order bit 7 is assigned to MSB of the selected MPR agent.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
DDR3(L) SDRAM Command Description and Operation
Command Truth Table
CKE
A0BA0- A13- A12- A10A9, NOTES
Previous Current RA A WE
BA2 A14 AP
A11
Cycle
Cycle
Function
Abbr.
Mode Register Set
MRS
H
H
L
L
L
L
BA
Refresh
REF
H
H
L
L
L
H
V
V
V
V
V
Self Refresh Entry
SRE
H
L
L
L
L
H
V
V
V
V
V
H
X
X
X
X
X
X
X
X
Self Refresh Exit
SRX
L
H
L
H
H
H
V
V
V
V
V
Single Bank Precharge
OP Code
7,9,12
7,8,9,12
PRE
H
H
L
L
H
L
BA
V
V
L
V
PREA
H
H
L
L
H
L
V
V
V
H
V
Bank Activate
ACT
H
H
L
L
H
H
BA
Write (Fixed BL8 or BC4)
WR
H
H
L
H
L
L
BA
RFU
V
L
CA
Write (BC4, on the Fly)
WRS4
H
H
L
H
L
L
BA
RFU
L
L
CA
Write (BL8, on the Fly)
WRS8
H
H
L
H
L
L
BA
RFU
H
L
CA
Write with Auto Precharge (Fixed BL8 or BC4)
WRA
H
H
L
H
L
L
BA
RFU
V
H
CA
Write with Auto Precharge (BC4, on the Fly)
WRAS4
H
H
L
H
L
L
BA
RFU
L
H
CA
Write with Auto Precharge (BL8, on the Fly)
WRAS8
H
H
L
H
L
L
BA
RFU
H
H
CA
RD
H
H
L
H
L
H
BA
RFU
V
L
CA
Read (BC4, on the Fly
RDS4
H
H
L
H
L
H
BA
RFU
L
L
CA
Read (BL8, on the Fly)
RDS8
H
H
L
H
L
H
BA
RFU
H
L
CA
Read with Auto Precharge (Fixed BL8 or BC4)
RDA
H
H
L
H
L
H
BA
RFU
V
H
CA
Read with Auto Precharge (BC4, on the Fly)
RDAS4
H
H
L
H
L
H
BA
RFU
L
H
CA
Read with Auto Precharge (BL8, on the Fly)
RDAS8
H
H
L
H
L
H
BA
RFU
H
H
CA
No Operation
NOP
H
H
L
H
H
H
V
V
V
V
V
10
Device Deselected
DES
H
H
H
X
X
X
X
X
X
X
X
11
L
H
H
H
V
V
V
V
V
Power Down Entry
PDE
H
L
H
X
X
X
X
X
X
X
X
L
H
H
H
V
V
V
V
V
H
X
X
X
X
X
X
X
X
Precharge all Banks
Read (Fixed BL8 or BC4)
Power Down Exit
PDX
L
Row Address (RA)
6,12
H
6,12
ZQ Calibration Long
ZQCL
H
H
L
H
H
L
X
X
X
H
X
ZQ Calibration Short
ZQCS
H
H
L
H
H
L
X
X
X
L
X
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
DDR3(L) SDRAM Command Description and Operation
Command Truth Table (Conti.)
NOTE1. All DDR3(L) SDRAM commands are defined by states of , RA, A, WEand CKE at the rising edge of the clock. The MSB of
BA, RA and CA are device density and configuration dependant.
NOTE2. REET is Low enable command which will be used only for asynchronous reset so must be maintained HIGH during any function.
NOTE3. Bank addresses (BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register.
NOTE4. “V” means “H or L (but a defined logic level)” and “X” means either “defined or undefined (like floating) logic level”.
NOTE5. Burst reads or writes cannot be terminated or interrupted and Fixed/on-the-Fly BL will be defined by MRS.
NOTE6. The Power-Down Mode does not perform any refresh operation.
NOTE7. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
NOTE8. Self Refresh Exit is asynchronous.
NOTE9. VREF (Both VrefDQ and VrefCA) must be maintained during Self Refresh operation.
NOTE10. The No Operation command should be used in cases when the DDR3(L) SDRAM is in an idle or wait state. The purpose of the
No Operation command (NOP) is to prevent the DDR3(L) SDRAM from registering any unwanted commands between operations.
A No Operation command will not terminate a pervious operation that is still executing, such as a burst read or write cycle.
NOTE11. The Deselect command performs the same function as No Operation command.
NOTE12. Refer to the CKE Truth Table for more detail with CKE transition.
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CKE Truth Table
CKE
Command (N)
RA, A,WE,
Action (N)
Notes
L
X
Maintain Power-Down
14,15
L
H
DESELECT or NOP
Power-Down Exit
11,14
L
L
X
Maintain Self-Refresh
15,16
L
H
DESELECT or NOP
Self-Refresh Exit
8,12,16
Bank(s) Active
H
L
DESELECT or NOP
Active Power-Down Entry
11,13,14
Reading
H
L
DESELECT or NOP
Power-Down Entry
11,13,14,17
Writing
H
L
DESELECT or NOP
Power-Down Entry
11,13,14,17
Precharging
H
L
DESELECT or NOP
Power-Down Entry
11,13,14,17
Refreshing
H
L
DESELECT or NOP
Precharge Power-Down Entry
11
H
L
DESELECT or NOP
Precharge Power-Down Entry
11,13,14,18
H
L
REFRESH
Self-Refresh
9,13,18
Current State
Previous Cycle
(N-1)
Current Cycle
(N)
L
Power-Down
Self-Refresh
All Banks Idle
NOTE 1 CKE (N) is the logic state of CKE at clock edge N; CKE (N-1) was the state of CKE at the previous clock edge.
NOTE 2 Current state is defined as the state of the DDR3(L) SDRAM immediately prior to clock edge N.
NOTE 3 COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N), ODT is not
included here.
NOTE 4 All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
NOTE 5 The state of ODT does not affect the states described in this table. The ODT function is not available during Self-Refresh.
NOTE 6 CKE must be registered with the same value on tCKEmin consecutive positive clock edges. CKE must remain at the valid
input level the entire time it takes to achieve the tCKEmin clocks of registrations. Thus, after any CKE transition, CKE may
not transition from its valid level during the time period of tIS + tCKEmin + tIH.
NOTE 7 DESELECT and NOP are defined in the Command Truth Table.
NOTE 8 On Self-Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXS period.
Read or ODT commands may be issued only after tXSDLL is satisfied.
NOTE 9 Self-Refresh modes can only be entered from the All Banks Idle state.
NOTE 10 Must be a legal command as defined in the Command Truth Table.
NOTE 11 Valid commands for Power-Down Entry and Exit are NOP and DESELECT only.
NOTE 12 Valid commands for Self-Refresh Exit are NOP and DESELECT only.
NOTE 13 Self-Refresh cannot be entered during Read or Write operations.
NOTE 14 The Power-Down does not perform any refresh operations.
NOTE 15 “X” means “don’t care“(including floating around VREF) in Self-Refresh and Power-Down. It also applies to Address pins.
NOTE 16 VREF (Both Vref_DQ and Vref_CA) must be maintained during Self-Refresh operation.
NOTE 17 If all banks are closed at the conclusion of the read, write or precharge command, then Precharge Power-Down is entered,
otherwise Active Power-Down is entered.
NOTE 18 ‘Idle state’ is defined as all banks are closed (tRP, tDAL, etc. satisfied), no data bursts are in progress, CKE is high, and all
timings from previous operations are satisfied (tMRD, tMOD, tRFC, tZQinit, tZQoper, tZQCS, etc.) as well as all
Self-Refresh exit and Power-Down Exit parameters are satisfied (tXS, tXP, tXPDLL, etc).
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No Operation (NOP) Command
The No operation (NOP) command is used to instruct the selected DDR3(L) SDRAM to perform a NOP (low and RA,
A, and WE high). This prevents unwanted commands from being registered during idle or wait states. Operations
already in progress are not affected.
Deselect Command
The DESELECT function (HIGH) prevents new commands from being executed by the DDR3(L) SDRAM. The DDR3(L)
SDRAM is effectively deselected. Operations already in progress are not affected.
DLL- Off Mode
DDR3(L) DLL-off mode is entered by setting MR1 bit A0 to “1”; this will disable the DLL for subsequent operations until A0
bit set back to “0”. The MR1 A0 bit for DLL control can be switched either during initialization or later.
The DLL-off Mode operations listed below are an optional feature for DDR3(L). The maximum clock frequency for DLL-off
Mode is specified by the parameter tCKDLL_OFF. There is no minimum frequency limit besides the need to satisfy the
refresh interval, tREFI.
Due to latency counter and timing restrictions, only one value of CAS Latency (CL) in MR0 and CAS Write Latency (CWL)
in MR2 are supported. The DLL-off mode is only required to support setting of both CL=6 and CWL=6.
DLL-off mode will affect the Read data Clock to Data Strobe relationship (tDQSCK) but not the data Strobe to Data
relationship (tDQSQ, tQH). Special attention is needed to line up Read data to controller time domain.
Comparing with DLL-on mode, where tDQSCK starts from the rising clock edge (AL+CL) cycles after the Read command,
the DLL-off mode tDQSCK starts (AL+CL-1) cycles after the read command. Another difference is that tDQSCK may not be
small compared to tCK (it might even be larger than tCK) and the difference between tDQSCKmin and tDQSCKmax is
significantly larger than in DLL-on mode.
The timing relations on DLL-off mode READ operation have shown at the following Timing Diagram (CL=6, BL=8)
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DLL-off mode READ Timing Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
CK
CK
CMD
Address
READ
Bank, Col b
RL = AL+CL = 6 (CL=6, AL=0)
DQSdiff_DLL_on
Din
b
DQ_DLL_on
RL(DLL_off) = AL+(CL-1) = 5
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
tDQSCKDLL_diff_min
DQSdiff_DLL_off
Din
b
DQ_DLL_off
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
Din
b+3
Din
b+4
Din
b+5
Din
b+6
DQSdiff_DLL_off
tDQSCKDLL_diff_max
Din
b
DQ_DLL_off
Din
b+1
Din
b+2
Din
b+7
Note: The tDQSCK is used here for DQS, , and DQ to have a simplified diagram; the DLL_off shift will affect both timings in the same
way and the skew between all DQ, DQS, and signals will still be tDQSQ.
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DLL on/off switching procedure
DDR3(L) DLL-off mode is entered by setting MR1 bit A0 to “1”; this will disable the DLL for subsequent operation until A0 bit
set back to “0”.
DLL “on” to DLL “off” Procedure
To switch from DLL “on” to DLL “off” requires the frequency to be changed during Self-Refresh outlined in the following
procedure:
1. Starting from Idle state (all banks pre-charged, all timing fulfilled, and DRAMs On-die Termination resistors, RTT, must
be in high impedance state before MRS to MR1 to disable the DLL).
2. Set MR1 Bit A0 to “1” to disable the DLL.
3. Wait tMOD.
4. Enter Self Refresh Mode; wait until (tCKSRE) is satisfied.
5. Change frequency, in guidance with “Input Clock Frequency Change” section.
6. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs.
7. Starting with the Self Refresh Exit command, CKE must continuously be registered HIGH until all tMOD timings from any
MRS command are satisfied. In addition, if any ODT features were enabled in the mode registers when Self Refresh
mode was entered, the ODT signal must continuously be registered LOW until all tMOD timings from any MRS
command are satisfied. If both ODT features were disabled in the mode registers when Self Refresh mode was entered,
ODT signal can be registered LOW or HIGH.
8. Wait tXS, and then set Mode Registers with appropriate values (especially an update of CL, CWL, and WR may be
necessary. A ZQCL command may also be issued after tXS).
9. Wait for tMOD, and then DRAM is ready for next command.
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DLL Switch Sequence from DLL-on to DLL-off
T0
T1
T
0
a
T
1
a
T
0
b
T
0
c
T
0
d
T
1
d
T
0
e
T
1
e
T
0
f
CK
CK
tMOD
CMD
1)
MRS 2)
NOP
tCKSRE
SRE 3)
4)
tCKSRX 5)
tXS
SRX 6)
NOP
NOP
tMOD
MRS 7)
NOP
Vali
8)
d
tCKESR
CKE
Vali
8)
d
Vali
8)
d
ODT
Tim
e
break
Do
not
Car
e
Note:
ODT: Static LOW in case RTT_Nom and RTT_WR is enabled, otherwise static Low or High
1) Starting with Idle State, RTT in Hi-Z State.
2) Disable DLL by setting MR1 Bit A0 to 1.
3) Enter SR.
4) Change Frequency.
5) Clock must be stable at least tCKSRX.
6) Exit SR.
7) Update Mode registers with DLL off parameters setting.
8) Any valid command.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
DLL “off” to DLL “on” Procedure
To switch from DLL “off” to DLL “on” (with requires frequency change) during Self-Refresh:
1. Starting from Idle state (all banks pre-charged, all timings fulfilled and DRAMs On-die Termination resistors (RTT) must
be in high impedance state before Self-Refresh mode is entered).
2. Enter Self Refresh Mode, wait until tCKSRE is satisfied.
3. Change frequency, in guidance with “Input clock frequency change” section.
4. Wait until a stable is available for at least (tCKSRX) at DRAM inputs.
5. Starting with the Self Refresh Exit command, CKE must continuously be registered HIGH until tDLLK timing from subsequent DLL Reset command is satisfied. In addition, if any ODT features were enabled in the mode registers when Self
Refresh mode was entered. The ODT signal must continuously be registered LOW until tDLLK timings from subsequent
DLL Reset command is satisfied. If both ODT features are disabled in the mode registers when Self Refresh mode was
entered, ODT signal can be registered LOW or HIGH.
6. Wait tXS, then set MR1 Bit A0 to “0” to enable the DLL.
7. Wait tMRD, then set MR0 Bit A8 to “1” to start DLL Reset.
8. Wait tMRD, then set Mode registers with appropriate values (especially an update of CL, CWL, and WR may be
necessary. After tMOD satisfied from any proceeding MRS command, a ZQCL command may also be issued during or
after tDLLK).
9. Wait for tMOD, then DRAM is ready for next command (remember to wait tDLLK after DLL Reset before applying
command requiring a locked DLL!). In addition, wait also for tZQoper in case a ZQCL command was issued.
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DLL Switch Sequence from DLL-off to DLL-on
T0
Ta0
NOP
SRE 2)
Ta1
Tb0
Tc0
Tc1
Td0
Te0
Tf1
Tg0
Th0
SRX 5)
MRS 6)
MRS 7)
MRS 8)
Valid
CK
CK
CMD
1)
ODTLoff
+ 1tck
NOP
tCKSRE
3)
tCKSRX 4)
tXS
tMRD
tMRD
tDLLK
CKE
Valid
tCKESR
ODT
Note:
ODT: Static LOW in case RTT_Nom and RTT_WR is enabled, otherwise static Low or High
1) Starting from Idle State.
2) Enter SR.
3) Change Frequency.
4) Clock must be stable at least tCKSRX.
5) Exit SR.
6) Set DLL-on by MR1 A0="0"
7) Start DLL Reset
8) Any valid command
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Time
break
Do not
Care
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Input Clock frequency change
Once the DDR3(L) SDRAM is initialized, the DDR3(L) SDRAM requires the clock to be “stable” during almost all states of
normal operation. This means once the clock frequency has been set and is to be in the “stable state”, the clock period is
not allowed to deviate except for what is allowed for by the clock jitter and SSC (spread spectrum clocking) specification.
The input clock frequency can be changed from one stable clock rate to another stable clock rate under two conditions: (1)
Self-Refresh mode and (2) Precharge Power-Down mode. Outside of these two modes, it is illegal to change the clock
frequency.
For the first condition, once the DDR3(L) SDRAM has been successfully placed in to Self-Refresh mode and tCKSRE has
been satisfied, the state of the clock becomes a don’t care. Once a don’t care, changing the clock frequency is permissible,
provided the new clock frequency is stable prior to tCKSRX. When entering and exiting Self-Refresh mode of the sole
purpose of changing the clock frequency. The DDR3(L) SDRAM input clock frequency is allowed to change only within the
minimum and maximum operating frequency specified for the particular speed grade.
The second condition is when the DDR3(L) SDRAM is in Precharge Power-Down mode (either fast exit mode or slow exit
mode). If the RTT_Nom feature was enabled in the mode register prior to entering Precharge power down mode, the ODT
signal must continuously be registered LOW ensuring RTT is in an off state. If the RTT_Nom feature was disabled in the
mode register prior to entering Precharge power down mode, RTT will remain in the off state. The ODT signal can be
registered either LOW or HIGH in this case. A minimum of tCKSRE must occur after CKE goes LOW before the clock
frequency may change. The DDR3(L) SDRAM input clock frequency is allowed to change only within the minimum and
maximum operating frequency specified for the particular speed grade. During the input clock frequency change, ODT and
CKE must be held at stable LOW levels. Once the input clock frequency is changed, stable new clocks must be provided to
the DRAM tCKSRX before precharge Power Down may be exited; after Precharge Power Down is exited and tXP has
expired, the DLL must be RESET via MRS. Depending on the new clock frequency additional MRS commands may need to
be issued to appropriately set the WR, CL, and CWL with CKE continuously registered high. During DLL re-lock period,
ODT must remain LOW and CKE must remain HIGH. After the DLL lock time, the DRAM is ready to operate with new clock
frequency.
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Change Frequency during Precharge Power-down
Previous Clock Frequency
T0
T1
T2
New Clock Frequency
Ta0
Tb0
Tc0
Tc1
Td0
Td1
Te0
Te1
NOP
MRS
NOP
Valid
tCKb
tCHb tCLb
tCK
CK
CK
tCH
tCL
tCKSRE
tCKSRX
CKE
tIH
tIS
tIH
tCPDED
tIS
tCKE
Command
NOP
NOP
NOP
NOP
DLL
Reset
Address
tAOFPD/tAOF
Valid
tXP
ODT
tIH
DQS,
DQS
High-Z
DQ
High-Z
tIS
tDLLK
DM
Enter Precharge
Power-Down mode
Exit Precharge
Power-Down mode
Frequency
Change
NOTES:
1. Applicable for both SLOW EXIT and FAST EXIT Precharge Power-down
2. tAOFPD and tAOF must be statisfied and outputs High-Z prior to T1; refer to ODT timing section for exact requirements
3. If the RTT_NOM feature was enabled in the mode register prior to entering Precharge power down mode, the ODT signal must
continuously be registered LOW ensuring RTT is in an off state. If the RTT_NOM feature was disabled in the mode register prior to entering
Precharge power down mode, RTT will remain in the off state. The ODT signal can be registered either LOW or HIGH in this case.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Write Leveling
For better signal integrity, DDR3(L) memory adopted fly by topology for the commands, addresses, control signals, and
clocks. The fly by topology has benefits from reducing number of stubs and their length but in other aspect, causes flight
time skew between clock and strobe at every DRAM on DIMM. It makes it difficult for the Controller to maintain tDQSS,
tDSS, and tDSH specification. Therefore, the controller should support “write leveling” in DDR3(L) SDRAM to compensate
the skew.
The memory controller can use the “write leveling” feature and feedback from the DDR3(L) SDRAM to adjust the DQS to CK - relationship. The memory controller involved in the leveling must have adjustable delay setting on DQS to align the rising edge of DQS - with that of the clock at the DRAM pin. DRAM asynchronously feeds back CK , sampled with the rising edge of DQS - , through the DQ bus. The controller repeatedly delays DQS - until a
transition from 0 to 1 is detected. The DQS - delay established though this exercise would ensure tDQSS specification.
Besides tDQSS, tDSS, and tDSH specification also needs to be fulfilled. One way to achieve this is to combine the actual
tDQSS in the application with an appropriate duty cycle and jitter on the DQS- signals. Depending on the actual
tDQSS in the application, the actual values for tDQSL and tDQSH may have to be better than the absolute limits provided in
“AC Timing Parameters” section in order to satisfy tDSS and tDSH specification. A conceptual timing of this scheme is
show as below figure.
Write Leveling Concept
Diff_CK
Source
Diff _ DQS
Diff _ CK
Destination
Diff_DQS
DQ
0 or 1
0
0
0
Push DQS to capture
0 -1
transition
DQ
0 or 1
1
1
1
DQS/ driven by the controller during leveling mode must be determined by the DRAM based on ranks populated.
Similarly, the DQ bus driven by the DRAM must also be terminated at the controller.
A separated feedback mechanism should be able for each byte lane. The low byte lane’s prime DQ, DQ0, carries the
leveling feedback to the controller across the DRAM configurations x4/x8 whereas DQ0 indicates the lower diff_DQS
(diff_LDQS) to clock relationship. The high byte lane’s prime DQ, DQ8, provides the feedback of the upper diff_DQS
(diff_UDQS) to clock relationship
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DRAM setting for write leveling and DRAM termination unction in that mode
DRAM enters into Write leveling mode if A7 in MR1 set “High” and after finishing leveling, DRAM exits from write leveling
mode if A7 in MR1 set “Low”. Note that in write leveling mode, only DQS/ terminations are activated and deactivated
via ODT pin not like normal operation.
MR setting involved in the leveling procedure
Function
MR1
Enable
Disable
Write leveling enable
A7
1
0
Output buffer mode (Qoff)
A12
0
1
DRAM termination function in the leveling mode
ODT pin at DRAM
DQS/ termination
DQs termination
De-asserted
off
off
Asserted
on
off
Note: In write leveling mode with its output buffer disabled (MR1[bit7]=1 with MR1[bit12]=1) all RTT_Nom settings are allowed; in Write
Leveling Mode with its output buffer enabled (MR1[bit7]=1 with MR1[bit12]=0) only RTT_Nom settings of RZQ/2, RZQ/4, and RZQ/6 are
allowed.
Procedure Description
Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. With entering write leveling mode, the
DQ pins are in undefined driving mode. During write leveling mode, only NOP or Deselect commands are allowed. As well
as an MRS command to exit write leveling mode. Since the controller levels one rank at a time, the output of other rank
must be disabled by setting MR1 bit A12 to 1. Controller may assert ODT after tMOD, time at which DRAM is ready to
accept the ODT signal.
Controller may drive DQS low and high after a delay of tWLDQSEN, at which time DRAM has applied on-die
termination on these signals. After tDQSL and tWLMRD controller provides a single DQS, edge which is used by the
DRAM to sample CK – driven from controller. tWLMRD (max) timing is controller dependent.
DRAM samples CK -
status with rising edge of DQS and provides feedback on all the DQ bits asynchronously after
tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no read strobes
(DQS/DQS) needed for these DQs. Controller samples incoming DQ and decides to increment or decrement DQS –
delay setting and launches the next DQS/ pulse after some time, which is controller dependent. Once a 0 to 1
transition is detected, the controller locks DQS – delay setting and write leveling is achieved for the device. The
following figure describes the timing diagram and parameters for the overall Write leveling procedure.
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Timing details of Write leveling sequence (For Information. Only Support prime DQ)
DQS - is capturing CK - low at T1 and CK - high at T2
T1
tWLS
T2
t WLH
tWLS
t WLH
CK
CK
CMD
M RS
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tMOD
ODT
t DQSL
tWLDQSEN
tDQSH
tDQSL
tDQSH
Di ff_ DQS
tWLMR D
On e Pri me DQ:
tWLO
t WLO
Prime DQ
t WLO
Late
Re ma ini ng
DQs
Earl y
Re ma ini ng
DQs
tWLO
All DQs are Prime :
tWLMRD
tWLOE
t WLO
tWLO
Late
Re ma ini ng
DQs
t WLOE
Earl y
Re ma ini ng
DQs
tWLO
tWLOE
t WLO
Undefined
Driving Mode
Time
break
Do not
Care
Note:
1. DRAM has the option to drive leveling feedback on a prime DQ or all DQs. If feedback is driven only on
one DQ, the remaining DQs must be driven low as shown in above Figure, and maintained at this state
through out the leveling procedure.
2. MRS: Load MR1 to enter write leveling mode
3. NOP: NOP or deselect
4. diff_DQS is the differential data strobe (DQS, ). Timing reference points are the zero crossings. DQS
is shown with solid line, is shown with dotted line.
6. DQS/ needs to fulfill minimum pulse width requirements tDQSH(min) and tDQSL(min) as defined for
regular Writes; the max pulse width is system dependent.
Write Leveling Mode Exit
The following sequence describes how Write Leveling Mode should be exited:
1. After the last rising strobe edge (see ~T0), stop driving the strobe signals (see ~Tc0). Note: From now on, DQ pins are in
undefined driving mode, and will remain undefined, until tMOD after the respective MR command (Te1).
2. Drive ODT pin low (tIS must be satisfied) and keep it low (see Tb0).
3. After the RTT is switched off, disable Write Level Mode via MRS command (see Tc2).
4. After tMOD is satisfied (Te1), any valid command may be registered. (MR commands may be issued after tMRD (Td1).
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Timing detail of Write Leveling exit
T0
T1
NOP
NOP
T2
Ta0
Tb0
Tc0
Tc1
NOP
NOP
Tc2
Td0
Td1
Te0
Te1
NOP
Valid
NOP
Valid
CK
CK
CMD
NOP
NOP
NOP
MRS
tMOD
MR1
BA
Valid
Valid
tMRD
ODT
tIS
tWLO
RTT_DQS_DQS
tAOFmin
tODTLoff
RTT_Nom
tAOFmax
DQS_DQS
DQ
Result = 1
Time Break
Transitioning
Do not Care
Undefined
Driving Mode
Extended Temperature Usage
Nanya’s DDR3(L) SDRAM supports the optional extended temperature range of 0°C to +95°C, TC. Thus, the SRT and ASR
options must be used at a minimum. The extended temperature range DRAM must be refreshed externally at 2X (double
refresh) anytime the case temperature is above +85°C (in supporting temperature range). The external refreshing
requirement is accomplished by reducing the refresh period from 64ms to 32ms. However, self refresh mode requires either
ASR or SRT to support the extended temperature. Thus either ASR or SRT must be enabled when TC is above +85°C or
self refresh cannot be used until the case temperature is at or below +85°C.
Mode Register Description
Field
Bits
Description
Auto Self-Refresh (ASR)
When enabled, DDR3(L) SDRAM automatically provides Self-Refresh power management functions for all
supported operating temperature values. If not enabled, the SRT bit must be programmed to indicate TOPER
ASR
MR2(A6)
during subsequent Self-Refresh operation.
0 = Manual SR Reference (SRT)
1 = ASR enable
Self-Refresh Temperature (SRT) Range
If ASR = 0, the SRT bit must be programmed to indicate TOPER during subsequent Self-Refresh operation. If
SRT
MR2(A7)
ASR = 1, SRT bit must be set to 0.
0 = Normal operating temperature range
1 = Extended operating temperature range
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Auto Self-Refresh mode - ASR mode
DDR3(L) SDRAM provides an Auto-Refresh mode (ASR) for application ease. ASR mode is enabled by setting MR2 bit
A6=1 and MR2 bit A7=0. The DRAM will manage Self-Refresh entry in either the Normal or Extended Temperature Ranges.
In this mode, the DRAM will also manage Self-Refresh power consumption when the DRAM operating temperature
changes, lower at low temperatures and higher at high temperatures. If the ASR option is not supported by DRAM, MR2 bit
A6 must set to 0. If the ASR option is not enabled (MR2 bit A6=0), the SRT bit (MR2 bit A7) must be manually programmed
with the operating temperature range required during Self-Refresh operation. Support of the ASR option does not
automatically imply support of the Extended Temperature Range.
Self-Refresh Temperature Range - SRT
SRT applies to devices supporting Extended Temperature Range only. If ASR=0, the Self-Refresh Temperature (SRT)
Range bit must be programmed to guarantee proper self-refresh operation. If SRT=0, then the DRAM will set an
appropriate refresh rate for Self-Refresh operation in the Normal Temperature Range. If SRT=1, then the DRAM will set an
appropriate, potentially different, refresh rate to allow Self-Refresh operation in either the Normal or Extended Temperature
Ranges. The value of the SRT bit can effect self-refresh power consumption, please refer to IDD table for details.
Self-Refresh mode summary
MR2
A[6]
MR2
A[7]
0
0
0
1
Allowed Operating
Temperature Range for
Self-Refresh mode
Self-Refresh operation
Normal 1
Self-Refresh rate appropriate for the Normal Temperature Range
Self-Refresh appropriate for either the Normal or Extended Temperature Ranges.
The DRAM must support Extended Temperature Range. The value of the SRT bit can
Normal and Extended 2
effect self-refresh power consumption, please refer to the IDD table for details.
1
0
1
0
1
1
ASR enabled (for devices supporting ASR and Normal Temperature Range).
Normal 1
Self-Refresh power consumption is temperature dependent.
ASR enabled (for devices supporting ASR and Extended Temperature Range).
Normal and Extended 2
Self-Refresh power consumption is temperature dependent.
Illegal
NOTES:
1. The Normal range depends on product’s grade.
- Commercial Grade = 0℃~85℃
- Quasi Industrial Grade (-T) = -40℃~85℃
- Industrial Grade (-I) = -40℃~85℃
- Automotive Grade 2 (-H) = -40℃~85℃
- Automotive Grade 3 (-A) = -40℃~85℃
2. The Normal and Extended range depends on product’s grade.
- Commercial Grade = 0℃~95℃
- Quasi Industrial Grade (-T) = -40℃~95℃
- Industrial Grade (-I) = -40℃~95℃
- Automotive Grade 2 (-H) = -40℃~105℃
- Automotive Grade 3 (-A) = -40℃~95℃
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MPR MR3 Register Definition
MR3 A[2]
MR3 A[1:0]
0
don't care
(0 or 1)
1
See the following table
Function
Normal operation, no MPR transaction.
All subsequent Reads will come from DRAM array.
All subsequent Writes will go to DRAM array.
Enable MPR mode, subsequent RD/RDA commands defined by MR3 A[1:0].
MPR Functional Description
• One bit wide logical interface via all DQ pins during READ operation.
• Register Read on x8:
• DQ[0] drives information from MPR.
• DQ[7:1] either drive the same information as DQ [0], or they drive 0b.
• Register Read on x16:
• DQL[0] and DQU[0] drive information from MPR.
• DQL[7:1] and DQU[7:1] either drive the same information as DQL [0], or they drive 0b.
• Addressing during for Multi Purpose Register reads for all MPR agents:
• BA [2:0]: don’t care
• A[1:0]: A[1:0] must be equal to ‘00’b. Data read burst order in nibble is fixed
• A[2]: For BL=8, A[2] must be equal to 0b, burst order is fixed to [0,1,2,3,4,5,6,7], *) For Burst Chop 4 cases, the burst
order is switched on nibble base A [2]=0b, Burst order: 0,1,2,3 *)
A[2]=1b, Burst order: 4,5,6,7 *)
• A[9:3]: don’t care
• A10/AP: don’t care
• A12/BC: Selects burst chop mode on-the-fly, if enabled within MR0.
• A11, A13... (if available): don’t care
• Regular interface functionality during register reads:
• Support two Burst Ordering which are switched with A2 and A[1:0]=00b.
• Support of read burst chop (MRS and on-the-fly via A12/BC)
• All other address bits (remaining column address bits including A10, all bank address bits) will be ignored by the DDR3(L)
SDRAM.
• Regular read latencies and AC timings apply.
• DLL must be locked prior to MPR Reads.
NOTE: *Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
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MPR Register Address Definition
The following table provide an overview of the available data location, how they are addressed by MR3 A[1:0] during a MRS
to MR3, and how their individual bits are mapped into the burst order bits during a Multi Purpose Register Read.
MPR MR3 Register Definition
MR3 A[2]
MR3 A[1:0]
Function
Burst
Length
Read Address
A[2:0]
Read
BL8
000
Burst Order and Data Pattern
Burst order 0,1,2,3,4,5,6,7
Pre-defined Data Pattern [0,1,0,1,0,1,0,1]
Predefined
1
00
Pattern for
000
BC4
Burst order 0,1,2,3
Pre-defined Data Pattern [0,1,0,1]
System
Calibration
100
BC4
Burst order 4,5,6,7
Pre-defined Data Pattern [0,1,0,1]
1
1
1
01
10
11
RFU
RFU
RFU
BL8
000
Burst order 0,1,2,3,4,5,6,7
BC4
000
Burst order 0,1,2,3
BC4
100
Burst order 4,5,6,7
BL8
000
Burst order 0,1,2,3,4,5,6,7
BC4
000
Burst order 0,1,2,3
BC4
100
Burst order 4,5,6,7
BL8
000
Burst order 0,1,2,3,4,5,6,7
BC4
000
Burst order 0,1,2,3
BC4
100
Burst order 4,5,6,7
Note: Burst order bit 0 is assigned to LSB and the burst order bit 7 is assigned to MSB of the selected MPR agent.
ACTIVE Command
The ACTIVE command is used to open (or activate) a row in a particular bank for subsequent access. The value on the
BA0-BA2 inputs selects the bank, and the addresses provided on inputs A0-A15 selects the row. These rows remain active
(or open) for accesses until a precharge command is issued to that bank. A PRECHARGE command must be issued before
opening a different row in the same bank.
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PRECHARGE Command
The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row activation a specified time (tRP) after the PRECHARGE command is issued,
except in the case of concurrent auto precharge, where a READ or WRITE command to a different bank is allowed as long
as it does not interrupt the data transfer in the current bank and does not violate any other timing parameters. Once a bank
has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to
that bank. A PRECHARGE command is allowed if there is no open row in that bank (idle bank) or if the previously open row
is already in the process of precharging. However, the precharge period will be determined by the last PRECHARGE
command issued to the bank.
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READ Operation
Read Burst Operation
During a READ or WRITE command DDR3(L) will support BC4 and BL8 on the fly using address A12 during the READ or
WRITE (AUTO PRECHARGE can be enabled or disabled).
A12=0, BC4 (BC4 = burst chop, tCCD=4)
A12=1, BL8
A12 is used only for burst length control, not as a column address.
Read Burst Operation RL=5 (AL=0, CL=5, BL=8)
T0
T1
T2
T3
NOP
NOP
NOP
T4
T5
T6
NOP
NOP
T7
T8
T9
T10
NOP
NOP
NOP
CK
CK
CMD
READ
Address
Bank
Col n
NOP
NOP
tRPST
tRPRE
DQS, DQS
Dout
n
DQ
CL=5
RL = AL + CL
Dout
n +1
Dout
n +2
Dout
n +3
Dout
n +4
Dout
n +5
Dout
n +6
Dout
n +7
Notes:.
1. BL8, RL = 5, AL = 0, CL = 5.
2. DOUT n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T0.
READ Burst Operation RL = 9 (AL=4, CL=5, BL=8)
T0
T1
T2
T3
NOP
NOP
NOP
T4
T5
T6
NOP
NOP
T7
T8
T9
T10
NOP
NOP
NOP
CK
CK
CMD
READ
Address
Bank
Col n
NOP
NOP
AL = 4
tRPRE
DQS, DQS
CL=5
Dout
n
DQ
RL = AL + CL
Dout
n +1
Dout
n +2
Notes:.
1. BL8, RL = 9, AL = (CL - 1), CL = 5.
2. DOUT n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T0.
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Dout
n +3
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
READ Timing Definitions
Read timing is shown in the following figure and is applied when the DLL is enabled and locked.
Rising data strobe edge parameters:
• tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, .
• tDQSCK is the actual position of a rising strobe edge relative to CK, .
• tQSH describes the DQS, differential output high time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
Falling data strobe edge parameters:
• tQSL describes the DQS, differential output low time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
tDQSQ; both rising/falling edges of DQS, no tAC defined.
READ Timing Definition
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Read Timing; Clock to Data Strobe relationship
Clock to Data Strobe relationship is shown in the following figure and is applied when the DLL is enabled and locked.
Rising data strobe edge parameters:
• tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK and .
• tDQSCK is the actual position of a rising strobe edge relative to CK and .
• tQSH describes the data strobe high pulse width.
Falling data strobe edge parameters:
• tQSL describes the data strobe low pulse width.
Clock to Data Strobe Relationship
RL Measured
to this point
CK
CK
tLZ(DQS)min
tDQSCKmin
tQSH
tRPRE
tQSL
tRPST
tHZ(DQS)min
DQS, DQS
Early Strobe
tHZ(DQS)max
tDQSCKmax
tLZ(DQS)max
tRPST
DQS, DQS
Late Strobe
tRPRE
NOTES:
1. Within a burst, rising strobe edge is not necessarily fixed to be always at tDQSCK(min) or tDQSCK(max). Instead, rising strobe edge
can vary between tDQSCK(min) and tDQSCK(max).
2. The DQS, differential output high time is defined by tQSH and the DQS, differential output low time is defined by tQSL.
3. Likewise, tLZ(DQS)min and tHZ(DQS)min are not tied to tDQSCKmin (early strobe case) and tLZ(DQS)max and tHZ(DQS)max are not
tied to tDQSCKmax (late strobe case).
4. The minimum pulse width of read preamble is defined by tRPRE(min).
5. The maximum read postamble is bound by tDQSCK(min) plus tQSH(min) on the left side and tHZDSQ(max) on the right side.
6. The minimum pulse width of read postamble is defined by tRPST(min).
7. The maximum read preamble is bound by tLZDQS(min) on the left side and tDQSCK(max) on the right side.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Read Timing; Data Strobe to Data Relationship
The Data Strobe to Data relationship is shown in the following figure and is applied when the DLL is enabled and locked.
Rising data strobe edge parameters:
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
Falling data strobe edge parameters:
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
• tDQSQ; both rising/falling edges of DQS, no tAC defined
Data Strobe to Data Relationship
T0
T1
T2
T3
NOP
NOP
NOP
T4
T5
T6
NOP
NOP
T7
T8
T9
NOP
NOP
CK
CK
CMD
READ
Address
Bank
Col n
NOP
tRPRE
NOP
tDQSQmax
tQH
tRPST
DQS, DQS
tLZ(DQ)min
RL = AL + CL
tDQSQmin
Dout
n
DQ (Last data valid)
DQ (First data no
longer valid)
Dout
n
Dout
n +1
Dout
n +1
tHZ(DQ)min
tQH
Dout
n +2
Dout
n +2
Dout
n +3
Dout
n +3
Dout
n +4
Dout
n +4
Dout
n +5
Dout
n +5
Dout
n +6
Dout
n +6
Dout
n +7
Dout
n +7
All DQ collectively
Valid data
Valid data
Notes:
1. BL = 8, RL = 5 (AL = 0, CL = 5)
2. DOUT n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T0.
5. Output timings are referenced to VDDQ/2, and DLL on for locking.
6. tDQSQ defines the skew between DQS, to Data and does not define DQS, to Clock.
7. Early Data transitions may not always happen at the same DQ. Data transitions of a DQ can vary (either early or late) within a burst.
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Bank
Col n
Address
53
Bank
Col n
Address
DQ
DQS, DQS
READ
CMD
DQ
DQS, DQS
READ
CMD
CK
CK
T0
NOP
NOP
T1
tCCD
NOP
tCCD
NOP
T2
RL = 5
RL = 5
NOP
NOP
T3
READ
READ
Bank
Col b
READ
Bank
Col b
READ
T4
tRPRE
tRPRE
NOP
NOP
T5
Dout
n
Dout
n
Dout
n +1
Dout
n +1
NOP
NOP
T6
Dout
n +2
NOP
tRPST
Dout
n +3
Dout
n +3
RL = 5
Dout
n +2
RL = 5
NOP
T7
Dout
n +5
Dout
n +6
Dout
n +7
NOP
T9
tRPRE
NOP
READ (BL4) to READ (BL4)
NOP
READ (BL8) to READ (BL8)
Dout
n +4
NOP
T8
Dout
b
Dout
b
Dout
b +1
Dout
b +1
NOP
NOP
T10
Dout
b +2
Dout
b +2
NOP
Dout
b +3
tRPST
Dout
b +3
NOP
T11
Dout
b +4
Dout
b +5
NOP
NOP
T12
Dout
b +6
Dout
b +7
NOP
tRPST
NOP
T13
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Read to Read (CL=5, AL=0)
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Version 1.9
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Bank
Col n
Address
54
Bank
Col n
Address
DQ
DQS, DQS
READ
CMD
DQ
DQS, DQS
READ
CMD
CK
CK
T0
NOP
T3
NOP
T4
tRPRE
NOP
NOP
READ
RL = 5
Bank
Col b
WRITE
tRPRE
READ to Write Command delay = RL +tCCD + 2tCK -WL
RL = 5
NOP
T2
READ to WRITE Command Delay = RL + tCCD/2 + 2tCK - WL
NOP
NOP
T1
NOP
NOP
T5
Dout
n
Dout
n
Dout
n +1
Dout
n +1
NOP
Bank
Col b
Dout
n +2
Dout
n +3
Dout
n +5
Dout
n +6
Dout
n +7
WL = 5
tRPST
NOP
T9
NOP
tWPRE
Dout
b
NOP
READ (BL8) to WRITE (BL8)
Dout
n +4
NOP
T8
READ (BL4) to WRITE (BL4)
NOP
NOP
T7
tRPST
Dout
n +3
WL = 5
Dout
n +2
WRITE
T6
Dout
b +1
Dout
b +2
NOP
NOP
T10
NOP
Dout
b
Dout
b +3
tBL = 4 clocks
tWPST
tWRPRE
NOP
T11
Dout
b +1
NOP
Dout
b +2
NOP
T12
Dout
b +3
NOP
Dout
b +4
NOP
T13
Dout
b +5
NOP
Dout
b +6
NOP
T14
tWR
tWTR
Dout
b +7
NOP
tWPST
NOP
T15
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
READ to WRITE (CL=5, AL=0; CWL=5, AL=0)
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Version 1.9
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Bank
Col n
Address
55
Bank
Col n
Address
DQ
DQS, DQS
READ
CMD
DQ
DQS, DQS
READ
CMD
CK
CK
T0
NOP
NOP
T1
tCCD
NOP
tCCD
NOP
T2
RL = 5
RL = 5
NOP
NOP
T3
READ
READ
Bank
Col b
READ
Bank
Col b
READ
T4
tRPRE
tRPRE
NOP
NOP
T5
Dout
n
Dout
n
Dout
n +1
Dout
n +1
NOP
NOP
T6
Dout
n +2
NOP
tRPST
Dout
n +3
Dout
n +3
RL = 5
Dout
n +2
RL = 5
NOP
T7
Dout
n +5
Dout
n +6
Dout
n +7
NOP
T9
tRPRE
NOP
READ (BC4) to READ (BL8)
NOP
READ (BL8) to READ (BC4)
Dout
n +4
NOP
T8
Dout
b
Dout
b
Dout
b +1
Dout
b +1
NOP
NOP
T10
Dout
b +2
Dout
b +2
Dout
b +3
Dout
b +3
NOP
tRPST
NOP
T11
Dout
b +4
Dout
b +5
NOP
NOP
T12
Dout
b +6
Dout
b +7
tRPST
NOP
NOP
T13
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
READ to READ (CL=5, AL=0)
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Version 1.9
02/2017
Bank
Col n
Address
56
Bank
Col n
Address
DQ
DQS, DQS
READ
CMD
DQ
DQS, DQS
READ
CMD
CK
CK
T0
NOP
T3
NOP
T4
tRPRE
NOP
NOP
READ
RL = 5
Bank
Col b
WRITE
tRPRE
READ to Write Command delay = RL +tCCD + 2tCK -WL
RL = 5
NOP
T2
READ to WRITE Command Delay = RL + tCCD/2 + 2tCK - WL
NOP
NOP
T1
NOP
NOP
T5
Dout
n
Dout
n
Dout
n +1
Dout
n +1
NOP
Bank
Col b
Dout
n +2
Dout
n +3
Dout
n +5
Dout
n +6
Dout
n +7
WL = 5
tRPST
NOP
T9
NOP
tWPRE
Dout
b
NOP
READ (BL8) to WRITE (BL8)
Dout
n +4
NOP
T8
READ (BL4) to WRITE (BL4)
NOP
NOP
T7
tRPST
Dout
n +3
WL = 5
Dout
n +2
WRITE
T6
Dout
b +1
Dout
b +2
NOP
NOP
T10
NOP
Dout
b
Dout
b +3
tBL = 4 clocks
tWPST
tWRPRE
NOP
T11
Dout
b +1
NOP
Dout
b +2
NOP
T12
Dout
b +3
NOP
Dout
b +4
NOP
T13
Dout
b +5
NOP
Dout
b +6
NOP
T14
tWR
tWTR
Dout
b +7
NOP
tWPST
NOP
T15
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
READ to WRITE (CL=5, AL=0; CWL=5, AL=0)
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Write Operation
DDR3(L) Burst Operation
During a READ or WRITE command, DDR3(L) will support BC4 and BL8 on the fly using address A12 during the READ or
WRITE (Auto Precharge can be enabled or disabled).
A12=0, BC4 (BC4 = Burst Chop, tCCD=4)
A12=1, BL8
A12 is used only for burst length control, not as a column address.
WRITE Timing Violations
Motivation
Generally, if timing parameters are violated, a complete reset/initialization procedure has to be initiated to make sure the
DRAM works properly. However, it is desirable for certain minor violations that the DRAM is guaranteed not to “hang up”
and errors be limited to that particular operation.
For the following, it will be assumed that there are no timing violations with regard to the Write command itself (including
ODT, etc.) and that it does satisfy all timing requirements not mentioned below.
Data Setup and Hold Violations
Should the data to strobe timing requirements (tDS, tDH) be violated, for any of the strobe edges associated with a write
burst, then wrong data might be written to the memory location addressed with the offending WRITE command.
Subsequent reads from that location might result in unpredictable read data, however, the DRAM will work properly
otherwise.
Strobe to Strobe and Strobe to Clock Violations
Should the strobe timing requirements (tDQSH, tDQSL, tWPRE, tWPST) or the strobe to clock timing requirements (tDSS,
tDSH, tDQSS) be violated, for any of the strobe edges associated with a Write burst, then wrong data might be written to
the memory location addressed with the offending WRITE command. Subsequent reads from that location might result in
unpredictable read data, however the DRAM will work properly otherwise.
Write Timing Parameters
This drawing is for example only to enumerate the strobe edges that “belong” to a write burst. No actual timing violations
are shown here. For a valid burst all timing parameters for each edge of a burst need to be satisfied (not only for one edge as shown).
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Write Timing Definition
T0
T1
T2
T3
CMD
Write
NOP
NOP
NOP
Address
Bank
Col n
T4
T5
T6
NOP
NOP
T7
T8
T9
Tn
NOP
NOP
NOP
CK
CK
NOP
NOP
tDSH
tDSH
tDSH
tDQSS tDSH
tWPST(min)
tDSS
tWPRE(min)
DQS, DQS
(tDQSS min)
tDQSH
tDQSL
tDQSH
Din
n
DQ
tDQSH
tDSS
tDSS
Din
n +1
tDQSL(min)
tDSS
Din
n +2
Din
n +3
Din
n +4
Din
n +5
Din
n +6
Din
n +7
tDSS
WL = AL + CWL
tWPST(min)
tDSH
tDSH
tDSH
tDSH
tDSS
tWPRE(min)
DQS, DQS
(tDQSS nominal)
tDQSH
tDQSL
tDQSH
Din
n
DQ
Din
n +1
tDQSH
tDSS
tDSS
tDQSL(min)
tDSS
Din
n +2
Din
n +3
Din
n +4
Din
n +5
Din
n +6
Din
n +7
tDSS
tDSH
tDQSS
tDSH
tWPRE(min)
tWPST(min)
tDSH
tDSH
DQS, DQS
(tDQSS max)
tDSS
tDQSH
tDQSL
Din
n
DQ
tDSS
tDSS
tDQSH
Din
n +1
Din
n +2
Din
n +3
Din
n +4
Din
n +5
tDQSH
Din
n +6
tDSS
tDQSL(min)
Din
n +7
tDSS
Note:
1. BL=8, WL=5 (AL=0, CWL=5).
2. Din n = data in from column n.
3. NOP commands are shown for ease of illustration; other command may be valid at these times.
4. BL8 setting activated by either MR0 [A1:0=00] or MR0 [A1:0=01] and A12 = 1 during WRITE command at T0.
5. tDQSS must be met at each rising clock edge.
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Bank
Col n
Address
59
Bank
Col n
Address
DQ
DQS, DQS
WRITE
CMD
DQ
DQS, DQS
WRITE
CMD
CK
CK
T0
NOP
NOP
T1
WL = 5
NOP
T3
WL = 5
NOP
READ
WRITE (BC4) to WRITE (BC4)
tCCD
NOP
WRITE (BL8) to WRITE (BL8)
tCCD
NOP
T2
Bank
Col b
WRITE
Bank
Col b
WRITE
T4
tWPRE
tWPRE
Dout
n
NOP
Dout
n
NOP
T5
Dout
n +1
Dout
n +1
Dout
n +2
NOP
Dout
n +2
NOP
T6
NOP
Dout
n +4
Dout
n +3
WL = 5
tWPST
WL = 5
Dout
n +3
NOP
T7
Dout
n +5
NOP
Dout
n +6
NOP
T8
tWPRE
Dout
n +7
Dout
b
NOP
Dout
b
NOP
T9
Dout
b +1
Dout
b +1
Dout
b +2
NOP
Dout
b +2
NOP
T10
tBL=4
NOP
Dout
b +4
Dout
b +3
tWPST
Dout
b +3
tBL=4
NOP
T11
Dout
b +5
NOP
Dout
b +6
NOP
T12
Dout
b +7
NOP
tWPST
NOP
T13
tWTR
tWR
tWTR
tWR
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
WRITE to WRITE (WL=5; CWL=5, AL=0)
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Version 1.9
02/2017
Bank
Col n
Address
60
Bank
Col n
Address
DQ
DQS, DQS
WRITE
CMD
DQ
DQS, DQS
WRITE
CMD
CK
CK
T0
NOP
NOP
T1
WL = 5
NOP
T3
WL = 5
NOP
WRITE (BC4) to READ (BC4/BL8)
NOP
WRITE (BL8) to READ (BC4/BL8)
NOP
T2
NOP
NOP
T4
tWPRE
tWPRE
NOP
Dout
n
NOP
T5
Dout
n
Dout
n +1
Dout
n +1
NOP
Dout
n +2
NOP
T6
Dout
n +2
NOP
Dout
n +4
tBL=4
Dout
n +3
tWPST
Dout
n +3
NOP
T7
Dout
n +5
NOP
Dout
n +6
NOP
T8
Dout
n +7
NOP
tWPST
NOP
T9
NOP
NOP
T10
tWTR
NOP
tWTR
NOP
T11
NOP
NOP
T12
Bank
Col b
READ
Bank
Col b
READ
T13
RL=5
RL=5
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
WRITE to READ (RL=5, CL=5, AL=0; WL=5, CWL=5, AL=0; BL=4)
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Version 1.9
02/2017
Bank
Col n
Address
61
Bank
Col n
Address
DQ
DQS, DQS
WRITE
CMD
DQ
DQS, DQS
WRITE
CMD
CK
CK
T0
NOP
NOP
T1
WL = 5
NOP
T3
WL = 5
NOP
READ
WRITE (BC4) to WRITE (BL8)
tCCD
NOP
WRITE (BL8) to WRITE (BC4)
tCCD
NOP
T2
Bank
Col b
WRITE
Bank
Col b
WRITE
T4
tWPRE
tWPRE
Dout
n
NOP
Dout
n
NOP
T5
Dout
n +1
Dout
n +1
Dout
n +2
NOP
Dout
n +2
NOP
T6
NOP
Dout
n +4
Dout
n +3
WL = 5
tWPST
WL = 5
Dout
n +3
NOP
T7
Dout
n +5
NOP
Dout
n +6
NOP
T8
tWPRE
Dout
n +7
Dout
b
NOP
Dout
b
NOP
T9
Dout
b +1
Dout
b +1
Dout
b +2
NOP
Dout
b +2
NOP
T10
Dout
b +3
Dout
b +3
Dout
b +3
tBL=4
NOP
tWPST
tBL=4
NOP
T11
Dout
b +4
Dout
b +5
NOP
NOP
T12
Dout
b +6
Dout
b +7
tWPST
NOP
NOP
T13
tWTR
tWR
tWTR
tWR
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
WRITE to WRITE (WL=5, CWL=5, AL=0)
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Refresh Command
The Refresh command (REF) is used during normal operation of the DDR3(L) SDRAMs. This command is not persistent,
so it must be issued each time a refresh is required. The DDR3(L) SDRAM requires Refresh cycles at an average periodic
interval of tREFI. When , RA, and A are held Low and WE High at the rising edge of the clock, the chip enters a
Refresh cycle. All banks of the SDRAM must be precharged and idle for a minimum of the precharge time tRP(min) before
the Refresh Command can be applied. The refresh addressing is generated by the internal refresh controller. This makes
the address bits “Don’t Care” during a Refresh command. An internal address counter suppliers the address during the
refresh cycle. No control of the external address bus is required once this cycle has started. When the refresh cycle has
completed, all banks of the SDRAM will be in the precharged (idle) state. A delay between the Refresh Command and the
next valid command, except NOP or DES, must be greater than or equal to the minimum Refresh cycle time tRFC(min) as
shown in the following figure.
In general, a Refresh command needs to be issued to the DDR3(L) SDRAM regularly every tREFI interval. To allow for
improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided.
A maximum of 8 Refresh commands can be postponed during operation of the DDR3(L) SDRAM, meaning that at no point
in time more than a total of 8 Refresh commands are allowed to be postponed. In case that 8 Refresh commands are
postponed in a row, the resulting maximum interval between the surrounding Refresh commands is limited to 9 x tREFI. A
maximum of 8 additional Refresh commands can be issued in advance (“pulled in”), with each one reducing the number of
regular Refresh commands required later by one. Note that pulling in more than 8 Refresh commands in advance does not
further reduce the number of regular Refresh commands required later, so that the resulting maximum interval between two
surrounding Refresh command is limited to 9 x tREFI. Before entering Self-Refresh Mode, all postponed Refresh
commands must be executed.
Self-Refresh Entry/Exit Timing
T0
T1
REF
NOP
Ta0
Ta1
Tb0
Tb1
Tb2
Tb3
Valid
Valid
Tc0
Tc1
CK
CK
CMD
NOP
tRFC
REF
NOP
NOP
Valid
Valid
Valid
REF
Valid
tRFC(min)
DRAM must be idle
tREFI (max, 9 x tREFI)
DRAM must be idle
Time Break
Postponing Refresh Commands (Example)
tREFI
9 x tREFI
t
tREFI
8 REF-Command postponed
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Pulled-in Refresh Commands (Example)
tREFI
9 x tREFI
t
tREFI
8 REF-Commands pulled-in
Self-Refresh Operation
The Self-Refresh command can be used to retain data in the DDR3(L) SDRAM, even if the rest of the system is powered
down. When in the Self-Refresh mode, the DDR3(L) SDRAM retains data without external clocking. The DDR3(L) SDRAM
device has a built-in timer to accommodate Self-Refresh operation. The Self-Refresh Entry (SRE) Command is defined by
having , RA, A, and E held low with WE high at the rising edge of the clock.
Before issuing the Self-Refreshing-Entry command, the DDR3(L) SDRAM must be idle with all bank precharge state with
tRP satisfied. Also, on-die termination must be turned off before issuing Self-Refresh-Entry command, by either registering
ODT pin low “ODTL + 0.5tCK” prior to the Self-Refresh Entry command or using MRS to MR1 command. Once the
Self-Refresh Entry command is registered, CKE must be held low to keep the device in Self-Refresh mode. During normal
operation (DLL on), MR1 (A0=0), the DLL is automatically disabled upon entering Self-Refresh and is automatically
enabled (including a DLL-RESET) upon exiting Self-Refresh.
When the DDR3(L) SDRAM has entered Self-Refresh mode, all of the external control signals, except CKE and REET,
are “don’t care”. For proper Self-Refresh operation, all power supply and reference pins (VDD, VDDQ, VSS, VSSQ,
VRefCA, and VRefDQ) must be at valid levels. The DRAM initiates a minimum of one Refresh command internally within
tCKE period once it enters Self-Refresh mode.
The clock is interna during Self-Refresh operation to save power. The minimum time that the DDR3(L) SDRAM must
remain in Self-Refresh mode is tCKESR. The user may change the external clock frequency or halt the external clock
tCKSRE after Self-Refresh entry is registered; however, the clock must be restarted and stable tCKSRX before the device
can exit Self-Refresh mode.
The procedure for exiting Self-Refresh requires a sequence of events. First, the clock must be stable prior to CKE going
back HIGH. Once a Self-Refresh Exit Command (SRX, combination of CKE going high and either NOP or Deselect on
command bus) is registered, a delay of at least tXS must be satisfied before a valid command not requiring a locked DLL
can be issued to the device to allow for any internal refresh in progress. Before a command which requires a locked DLL
can be applied, a delay of at least tXSDLL and applicable ZQCAL function requirements must be satisfied.
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Before a command that requires a locked DLL can be applied, a delay of at least tXSDLL must be satisfied. Depending on
the system environment and the amount of time spent in Self-Refresh, ZQ calibration commands may be required to
compensate for the voltage and temperature drift as described in “ZQ Calibration Commands”. To issue ZQ calibration
commands, applicable timing requirements must be satisfied.
CKE must remain HIGH for the entire Self-Refresh exit period tXSDLL for proper operation except for Self-Refresh re-entry.
Upon exit from Self-Refresh, the DDR3(L) SDRAM can be put back into Self-Refresh mode after waiting at least tXS period
and issuing one refresh command (refresh period of tRFC). NOP or deselect commands must be registered on each
positive clock edge during the Self-Refresh exit interval tXS. ODT must be turned off during tXSDLL.
The use of Self-Refresh mode instructs the possibility that an internally times refresh event can be missed when CKE is
raised for exit from Self-Refresh mode. Upon exit from Self-Refresh, the DDR3(L) SDRAM requires a minimum of one extra
refresh command before it is put back into Self-Refresh mode.
Self-Refresh Entry/Exit Timing
T0
T1
T2
Ta0
Tb0
Tc0
Tc1
Td0
Te0
Tf
Valid
Valid
CK, CK
tCKSRE
tCKSRX
tCPDED
CKE
tCKESR
Valid
ODT
ODTL
CMD
NOP
SRE
T
NOP
SRX
Valid 2)
Valid 3)
Valid
Valid
tXS
tXSDLL
tRP
Enter Self Refresh
Exit Self Refresh
Do Not
Care
Note:
1. Only NOP or DES commands
2. Valid commands not requiring a locked DLL
3. Valid commands requiring a locked DLL
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Power-Down Modes
Power-Down Entry and Exit
Power-Down is synchronously entered when CKE is registered low (along with NOP or Deselect command). CKE is not
allowed to go low while mode register set command, MPR operations, ZQCAL operations, DLL locking or read/write
operation are in progress. CKE is allowed to go low while any of other operation such as row activation, precharge or auto
precharge and refresh are in progress, but power-down IDD spec will not be applied until finishing those operation.
The DLL should be in a locked state when power-down is entered for fastest power-down exit timing. If the DLL is not
locked during power-down entry, the DLL must be reset after exiting power-down mode for proper read operation and
synchronous ODT operation. DRAM design provides all AC and DC timing and voltage specification as well as proper DLL
operation with any CKE intensive operations as long as DRAM controller complies with DRAM specifications.
During Power-Down, if all banks are closed after any in progress commands are completed, the device will be in precharge
Power-Down mode; if any bank is open after in progress commands are completed, the device will be in active
Power-Down mode.
Entering Power-down deactivates the input and output buffers, excluding CK, CK, ODT, E, and REET. To protect
DRAM internal delay on CKE line to block the input signals, multiple NOP or Deselect commands are needed during the
CKE switch off and cycle(s) after, this timing period are defined as tCPDED. CKE_low will result in deactivation of
command and address receivers after tCPDED has expired.
Power-Down Entry Definitions
Status of DRAM
MRS bit A12
DLL
PD Exit
Don't Care
On
Fast
Relevant Parameters
Active
tXP to any valid command.
(A Bank or more open)
tXP to any valid command. Since it is in precharge state,
Precharged
commands here will be ACT, AR, MRS/EMRS, PR, or PRA.
0
Off
Slow
(All Banks Precharged)
tXPDLL to commands who need DLL to operate, such as RD,
RDA, or ODT control line.
Precharged
1
On
Fast
tXP to any valid command.
(All Banks Precharged)
Also the DLL is disabled upon entering precharge power-down (Slow Exit Mode), but the DLL is kept enabled during
precharge power-down (Fast Exit Mode) or active power-down. In power-down mode, CKE low, REET high, and a stable
clock signal must be maintained at the inputs of the DDR3(L) SDRAM, and ODT should be in a valid state but all other input
signals are “Don’t care” (If REET goes low during Power-Down, the DRAM will be out of PD mode and into reset state).
CKE low must be maintain until tCKE has been satisfied. Power-down duration is limited by 9 times tREFI of the device.
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The power-down state is synchronously exited when CKE is registered high (along with a NOP or Deselect command).
CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be applied with power-down
exit latency, tXP and/or tXPDLL after CKE goes high. Power-down exit latency is defined at AC spec table of this datasheet.
Active Power-Down Entry and Exit timing diagram
T0
T1
T2
Ta0
Valid
NOP
NOP
Ta1
Tb0
Tb1
Tc0
NOP
NOP
NOP
Valid
Valid
CK
CK
CMD
NOP
tIS
tPD
tIH
CKE
tIH
tIS
Address
tCKE
Valid
Valid
tCPDED
tXP
Enter
Power-Down
Exit
Power-Down
Do not
care
Time
Break
Timing Diagrams for CKE with PD Entry, PD Exit with Read, READ with Auto Precharge, Write and Write with Auto Precharge, Activate,
Precharge, Refresh, MRS:
Power-Down Entry after Read and Read with Auto Precharge
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
RD or
RDA
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Ta7
Ta8
Tb0
Tb1
NOP
NOP
NOP
Valid
CK
CK
CMD
tIS
CKE
tCPDED
Valid
tPD
Address
Valid
Valid
RL = AL + CL
DQS,
DQS
BL8
Din
b
Din
b+1
Din
b+2
Din
b+3
BC4
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
tRDPDEN
Power-Down
Entry
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Power-Down Entry after Write with Auto Precharge
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Tb0
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Tb1
Tb2
Tb3
Tc0
NOP
NOP
NOP
Valid
CK
CK
CMD
tIS
CKE
Address
tCPDED
Bank,
Col n
WL=AL+CWL
WR (1)
tPD
DQS,
DQS
BL8
Din
b
Din
b+1
Din
b+2
Din
b+3
BC4
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
Start Internal
Precharge
tWRAPDEN
Power-Down
Entry
Do not
care
Time
Break
Power-Down Entry after Write
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Tb0
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Tb1
Tb2
Tc0
NOP
NOP
NOP
CK
CK
CMD
tIS
CKE
Address
tCPDED
Bank,
Col n
WL=AL+CWL
WR
tPD
DQS,
DQS
BL8
Din
b
Din
b+1
Din
b+2
Din
b+3
BC4
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
tWRPDEN
Power-Down
Entry
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Precharge Power-Down (Fast Exit Mode) Entry and Exit
T0
T1
WRITE
NOP
T2
Ta0
Ta1
NOP
NOP
Tb0
Tb1
Tc0
NOP
NOP
NOP
NOP
Valid
CK
CK
CMD
NOP
tCPDED
tCKE
tIS
tIH
CKE
tIS
tPD
tXP
Enter
Power-Down
Mode
Exit
Power-Down
Mode
Do not
care
Time
Break
Precharge Power-Down (Slow Exit Mode) Entry and Exit
T0
T1
T2
Ta0
Ta1
WRITE
NOP
NOP
NOP
NOP
Tb0
Tb1
Tc0
Td0
NOP
NOP
Valid
Valid
NOP
Valid
Valid
CK
CK
CMD
tCPDED
tCKE
tIS
tIH
CKE
tIS
tXP
tPD
Enter
Power-Down
Mode
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Exit
Power-Down
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Refresh Command to Power-Down Entry
T0
T1
T2
T3
Ta0
CMD
REF
NOP
NOP
NOP
Address
Valid
Ta1
CK
CK
Valid
Valid
tIS
tCPDED
tPD
CKE
Valid
tREFPDEN
Do not
care
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Active Command to Power-Down Entry
T0
T1
T2
T3
Ta0
CMD
Active
NOP
NOP
NOP
Address
Valid
Ta1
CK
CK
Valid
Valid
tCPDED
tIS
tPD
CKE
Valid
tACTPDEN
Do not
care
Time
Break
Precharge/Precharge all Command to Power-Down Entry
T0
T1
T2
T3
Ta0
CMD
PRE
PREA
NOP
NOP
NOP
Address
Valid
Ta1
CK
CK
Valid
Valid
tIS
tCPDED
tPD
CKE
Valid
tPREPDEN
Do not
care
Time
Break
MRS Command to Power-Down Entry
T0
T1
Ta0
Ta1
CMD
MRS
NOP
NOP
NOP
Address
Valid
Tb0
Tb1
CK
CK
Valid
Valid
tIS
tCPDED
tPD
CKE
Valid
tMRSPDEN
Do not
care
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On-Die Termination (ODT)
ODT (On-Die Termination) is a feature of the DDR3(L) SDRAM that allows the DRAM to turn on/off termination resistance
for each DQ, DQS, , and DM for x8 configuration (and TDQS, T for x8 configuration, when enabled via A11=1 in
MR1) via the ODT control pin. For x16 configuration, ODT is applied to each DQ, DQSU, U, DQSL, L, DMU and
DMl signal via the ODT control pin. The ODT feature is designed to improve signal integrity of the memory channel by
allowing the DRAM controller to independently turn on/off termination resistance for any or all DRAM devices.
The ODT feature is turned off and not supported in Self-Refresh mode.
A simple functional representation of the DRAM ODT feature is shown as below.
Functional Representation of ODT
ODT
To other
circuitry
like
RCV, ...
VDDQ / 2
RTT
Switch
DQ , DQS, DM, TDQS
The switch is enabled by the internal ODT control logic, which uses the external ODT pin and other control information. The
value of RTT is determined by the settings of Mode Register bits. The ODT pin will be ignored if the Mode Register MR1
and MR2 are programmed to disable ODT and in self-refresh mode.
ODT Mode Register and ODT Truth Table
The ODT Mode is enabled if either of MR1 {A2, A6, A9} or MR2 {A9, A10} are non-zero. In this case, the value of RTT is
determined by the settings of those bits.
Application: Controller sends WR command together with ODT asserted.
One possible application: The rank that is being written to provides termination.
DRAM turns ON termination if it sees ODT asserted (except ODT is disabled by MR)
DRAM does not use any write or read command decode information.
Termination Truth Table
ODT pin
DRAM Termination State
0
OFF
1
ON, (OFF, if disabled by MR1 {A2, A6, A9} and MR2{A9, A10} in general)
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Synchronous ODT Mode
Synchronous ODT mode is selected whenever the DLL is turned on and locked. Based on the power-down definition, these
modes are:
Any bank active with CKE high
Refresh with CKE high
Idle mode with CKE high
Active power down mode (regardless of MR0 bit A12)
Precharge power down mode if DLL is enabled during precharge power down by MR0 bit A12
The direct ODT feature is not supported during DLL-off mode. The on-die termination resistors must be disabled by continuously registering the ODT pin low and/or by programming the RTT_Nom bits MR1{A9,A6,A2} to {0,0,0} via a mode register
set command during DLL-off mode.
In synchronous ODT mode, RTT will be turned on ODTLon clock cycles after ODT is sampled high by a rising clock edge
and turned off ODTLoff clock cycles after ODT is registered low by a rising clock edge. The ODT latency is tied to the write
latency (WL) by: ODTLonn = WL - 2; ODTLoff = WL-2.
ODT Latency and Posted ODT
In synchronous ODT Mode, the Additive Latency (AL) programmed into the Mode Register (MR1) also applies to the ODT
signal. The DRAM internal ODT signal is delayed for a number of clock cycles defined by the Additive Latency (AL) relative
to the external ODT signal. ODTLon = CWL + AL - 2; ODTLoff = CWL + AL - 2. For details, refer to DDR3(L) SDRAM
latency definitions.
ODT Latency
Symbol
Parameter
DDR3-1600
Unit
ODTLon
ODT turn on Latency
WL - 2 = CWL + AL - 2
tCK
ODTLoff
ODT turn off Latency
WL - 2 = CWL + AL - 2
tCK
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Timing Parameters
In synchronous ODT mode, the following timing parameters apply: ODTLon, ODTLoff, tAON min/max, tAOF min/max.
Minimum RTT turn-on time (tAON min) is the point in time when the device leaves high impedance and ODT resistance
begins to turn on. Maximum RTT turn-on time (tAON max) is the point in time when the ODT resistance is fully on. Both are
measured from ODTLon.
Minimum RTT turn-off time (tAOF min) is the point in time when the device starts to turn off the ODT resistance. Maximum
RTT turn off time (tAOF max) is the point in time when the on-die termination has reached high impedance. Both are
measured from ODTLoff.
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the SDRAM with
ODT high, then ODT must remain high until ODTH4 (BL=4) or ODTH8 (BL=8) after the write command. ODTH4 and
ODTH8 are measured from ODT registered high to ODT registered low or from the registration of a write command until
ODT is registered low.
Synchronous ODT Timing Example for AL=3; CWL=5; ODTLon=AL+CWL-2=6;
ODTLoff=AL+CWL-2=6
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
CK
CK
CKE
ODT
AL=3
AL=3
tAONmax
CWL - 2
tAONmax
ODTH4, min
ODTLon = CWL + AL -2
tAONmin
tAONmin
ODTLoff = CWL + AL -2
RTT_NOM
DRAM_RTT
Transitioning
Do not care
Synchronous ODT example with BL=4, WL=7
T0
T1
T2
NOP
NOP
NOP
T3
T4
T5
T6
NOP
NOP
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
CK
NOP
NOP
WRS4
NOP
ODTH4
ODTH4
ODT
ODTH4min
ODTLoff = CWL -2
tAONmin
ODTLoff = WL - 2
tAOFmax
tAONmax
tAOFmax
tAONmax
tAONmin
tAOFmin
tAOFmin
RTT_NOM
DRAM_RTT
ODTLon = CWL -2
ODTLon = CWL -2
Transitioning
Do not care
ODT must be held high for at least ODTH4 after assertion (T1); ODT must be kept high ODTH4 (BL=4) or ODTH8 (BL=8)
after Write command (T7). ODTH is measured from ODT first registered high to ODT first registered low, or from
registration of Write command with ODT high to ODT registered low. Note that although ODTH4 is satisfied from ODT
registered at T6 ODT must not go low before T11 as ODTH4 must also be satisfied from the registration of the Write
command at T7.
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ODT during Reads:
As the DDR3(L) SDRAM cannot terminate and drive at the same time, RTT must be disabled at least half a clock cycle
before the read preamble by driving the ODT pin low appropriately. RTT may not be enabled until the end of the post-amble
as shown in the following figure. DRAM turns on the termination when it stops driving which is determined by tHZ. If DRAM
stops driving early (i.e. tHZ is early), then tAONmin time may apply. If DRAM stops driving late (i.e. tHZ is late), then DRAM
complies with tAONmax timing. Note that ODT may be disabled earlier before the Read and enabled later after the Read
than shown in this example.
ODT must be disabled externally during Reads by driving ODT low. (Example: CL=6;
AL=CL-1=5; RL=AL+CL=11; CWL=5; ODTLon=CWL+AL-2=8; ODTLoff=CWL+AL-2=8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
CK
CMD
Read
Address
Valid
NOP
NOP
NOP
NOP
NOP
NOP
NOP
RL = AL + CL
ODT
ODTLon = CWL + AL - 2
ODTLoff = CWL + AL - 2
tAONmax
tAOFmin
DRAM
ODT
RTT_NOM
RTT
RTT_NOM
tAOFmax
DQSdiff
Din
b
DQ
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b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Dynamic ODT
In certain application cases and to further enhance signal integrity on the data bus, it is desirable that the termination
strength of the DDR3(L) SDRAM can be changed without issuing an MRS command. This requirement is supported by the
“Dynamic ODT” feature as described as follows:
Functional Description
The Dynamic ODT Mode is enabled if bit (A9) or (A10) of MR2 is set to ‘1’. The function is described as follows:
Two RTT values are available: RTT_Nom and RTT_WR.
The value for RTT_Nom is preselected via bits A[9,6,2] in MR1.
The value for RTT_WR is preselected via bits A[10,9] in MR2.
During operation without write commands, the termination is controlled as follows:
Nominal termination strength RTT_Nom is selected.
Termination on/off timing is controlled via ODT pin and latencies ODTLon and ODTLoff.
When a Write command (WR, WRA, WRS4, WRS8, WRAS4, WRAS8) is registered, and if Dynamic ODT is enabled, the
termination is controlled as follows:
A latency ODTLcnw after the write command, termination strength RTT_WR is selected.
A latency ODTLcwn8 (for BL8, fixed by MRS or selected OTF) or ODTLcwn4 (for BC4, fixed by MRS or selected OTF) after the
write command, termination strength RTT_Nom is selected.
Termination on/off timing is controlled via ODT pin and ODTLon, ODTLoff.
The following table shows latencies and timing parameters which are relevant for the on-die termination control in Dynamic
ODT mode.
The dynamic ODT feature is not supported at DLL-off mode. User must use MRS command to set RTT_WR, MR2[A10,A9
= [0,0], to disable Dynamic ODT externally.
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the SDRAM with
ODT high, then ODT must remain high until ODTH4 (BL=4) or ODTH8 (BL=8) after the Write command. ODTH4 and
ODTH8 are measured from ODT registered high to ODT registered low or from the registration of Write command until ODT
is register low.
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Latencies and timing parameters relevant for Dynamic ODT
Name and Description
Abbr.
Defined from
Defined to
Definition for all
DDR3(L) speed pin
Unit
ODT turn-on Latency
ODTLon
registering external
ODT signal high
turning termination on
ODTLon=WL-2
tCK
ODT turn-off Latency
ODTLoff
registering external
ODT signal low
turning termination off
ODTLoff=WL-2
tCK
ODT Latency for changing from
RTT_Nom to RTT_WR
ODTLcnw
registering external
write command
change RTT strength from
RTT_Nom to RTT_WR
ODTLcnw=WL-2
tCK
ODT Latency for change from
RTT_WR to RTT_Nom (BL=4)
ODTLcwn4
registering external
write command
change RTT strength from
RTT_WR to RTT_Nom
ODTLcwn4=4+ODTLoff
tCK
ODT Latency for change from
RTT_WR to RTT_Nom (BL=8)
ODTLcwn8
registering external
write command
change RTT strength from
RTT_WR to RTT_Nom
ODTLcwn8=6+ODTLoff
tCK(avg)
Minimum ODT high time
after ODT assertion
ODTH4
registering ODT high
ODT registered low
ODTH4=4
tCK(avg)
Minimum ODT high time
after Write (BL=4)
ODTH4
registering write with
ODT high
ODT registered low
ODTH4=4
tCK(avg)
Minimum ODT high time
after Write (BL=8)
ODTH8
registering write with
ODT high
ODT register low
ODTH8=6
tCK(avg)
RTT change skew
tADC
ODTLcnw
ODTLcwn
RTT valid
tADC(min)=0.3tCK(avg)
tADC(max)=0.7tCK(avg)
tCK(avg)
Note: tAOF,nom and tADC,nom are 0.5tCK (effectively adding half a clock cycle to ODTLoff, ODTcnw, and ODTLcwn)
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
ODT Timing Diagrams
Dynamic ODT: Behavior with ODT being asserted before and after the write
T0
T1
T2
T3
NOP
NOP
NOP
NOP
T4
T5
T6
NOP
NOP
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
CK
CMD
WRS4
Address
NOP
Valid
ODT
ODTLoff
ODTH4
ODTLcwn4
tADCmin
tAONmin
RTT_Nom
RTT
RTT_WR
tAONmax
RTT_Nom
tADCmax
ODTLon
tAOFmin
tADCmin
tAOFmax
tADCmax
ODTLcnw
ODTH4
DQS/DQS
WL
Din
n
DQ
Din
n+1
Din
n+2
Din
n+3
Do not
care
Note: Example for BC4 (via MRS or OTF), AL=0, CWL=5. ODTH4 applies to first registering ODT high and to the registration of the Write
command. In this example ODTH4 would be satisfied if ODT went low at T8. (4 clocks after the Write command).
Dynamic ODT: Behavior without write command, AL=0, CWL=5
T0
T1
T2
T3
T4
Valid
Valid
Valid
Valid
T5
T6
Valid
Valid
T7
T8
T9
T10
T11
Valid
Valid
Valid
Valid
CK
CK
CMD
Valid
Valid
Address
ODTLoff
ODT
ODTH4
ODTLoff
tADCmin
tAONmin
RTT_Nom
RTT
tADCmax
tAONmax
ODTLon
DQS/DQS
DQ
Do not
care
Transitioning
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied; ODT registered low at T5
would also be legal.
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Transitioning
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Dynamic ODT: Behavior with ODT pin being asserted together with write command
for the duration of 6 clock cycles.
T0
T1
T2
T3
NOP
WRS8
NOP
T4
T5
T6
NOP
NOP
T7
T8
T9
T10
T11
NOP
NOP
NOP
NOP
CK
CK
CMD
NOP
NOP
NOP
ODTLcnw
Valid
Address
ODT
ODTH8
ODTLoff
ODTLon
tAOFmin
tAONmin
RTT_WR
RTT
tAOFmax
tAONmax
ODTLcwn8
DQS/DQS
WL
Din
h
DQ
Din
h+1
Din
h+2
Din
h+3
Din
h+4
Din
h+5
Din
h+6
Din
h+7
Do not
care
Transitioning
Note: Example for BL8 (via MRS or OTF), AL=0, CWL=5. In this example ODTH8=6 is exactly satisfied.
Dynamic ODT: Behavior with ODT pin being asserted together with write
command for a duration of 6 clock cycles, example for BC4 (via MRS or OTF),
AL=0, CWL=5.
T0
T1
T2
NOP
WRS4
NOP
T3
T4
T5
T6
NOP
NOP
T7
T8
T9
T10
T11
NOP
NOP
NOP
NOP
CK
CK
CMD
Address
ODTLcnw
NOP
NOP
NOP
Valid
ODT
ODTH4
tAONmin
ODTLoff
tADCmin
RTT_WR
RTT
tAOFmin
RTT_Nom
tAONmax
tAOFmax
tADCmax
ODTLon
ODTLcwn4
DQS/DQS
WL
Din
n
DQ
Din
n+1
Din
n+2
Din
n+3
Do not
care
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Dynamic ODT: Behavior with ODT pin being asserted together with write command
for the duration of 4 clock cycles.
T0
T1
T2
NOP
WRS4
NOP
T3
T4
T5
T6
NOP
NOP
T7
T8
T9
T10
T11
NOP
NOP
NOP
NOP
CK
CK#
CMD
Address
ODTLcnw
NOP
NOP
NOP
Valid
ODT
ODTH4
tAONmin
ODTLoff
tAOFmin
RTT_WR
RTT
tAONmax
tAOFmax
ODTLon
ODTLcwn4
DQS/DQS
WL
Din
n
DQ
Din
n+1
Din
n+2
Din
n+3
Do not
care
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Asynchronous ODT Mode
Asynchronous ODT mode is selected when DRAM runs in DLLon mode, but DLL is temporarily disabled (i.e. frozen) in
precharge power-down (by MR0 bit A12). Based on the power down mode definitions, this is currently Precharge power
down mode if DLL is disabled during precharge power down by MR0 bit A12.
In asynchronous ODT timing mode, internal ODT command is NOT delayed by Additive Latency (AL) relative to the
external ODT command.
In asynchronous ODT mode, the following timing parameters apply: t AONPD min/max, tAOFPD min/max.
Minimum RTT turn-on time (tAONPD min) is the point in time when the device termination circuit leaves high impedance state
and ODT resistance begins to turn on. Maximum RTT turn on time (t AONPD max) is the point in time when the ODT
resistance is fully on.
tAONPDmin and tAONPDmax are measured from ODT being sampled high.
Minimum RTT turn-off time (tAOFPDmin) is the point in time when the devices termination circuit starts to turn off the ODT
resistance. Maximum ODT turn off time (t AOFPDmax) is the point in time when the on-die termination has reached high
impedance. tAOFPDmin and tAOFPDmax are measured from ODT being sample low.
Asynchronous ODT Timings on DDR3(L) SDRAM with fast ODT transition: AL is
ignored.
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
CK
CK#
CKE
tIS
tIH
ODT
tIS
tIH
tAONPDmax
tAOFPDmin
RTT
tAONPDmin
tAOFPDmax
Do not
care
Transitioning
In Precharge Power Down, ODT receiver remains active; however no Read or Write command can be issued, as the
respective ADD/CMD receivers may be disabled.
Asynchronous ODT Timing Parameters for all Speed Bins
Symbol
Description
Min.
Max.
Unit
tAONPD
Asynchronous RTT turn-on delay (Power-Down with DLL frozen)
2
8.5
ns
tAOFPD
Asynchronous RTT turn-off delay (Power-Down with DLL frozen)
2
8.5
ns
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
ODT timing parameters for Power Down (with DLL frozen) entry and exit transition
period
Description
Min.
Max.
min{ ODTLon * tCK + tAONmin; tAONPDmin }
max{ ODTLon * tCK + tAONmax; tAONPDmax }
min{ (WL - 2) * tCK + tAONmin; tAONPDmin }
max{ (WL - 2) * tCK + tAONmax; tAONPFmax }
min{ ODTLoff * tCK + tAOFmin; tAOFPDmin }
max{ ODTLoff * tCK + tAOFmax; tAOFPDmax }
min{ (WL - 2) * tCK + tAOFmin; tAOFPDmin }
max{ (WL - 2) * tCK + tAOFmax; tAOFPDmax }
ODT to RTT turn-on delay
ODT to RTT turn-off delay
tANPD
WL-1
Synchronous to Asynchronous ODT Mode Transition during Power-Down Entry
If DLL is selected to be frozen in Precharge Power Down Mode by the setting of bit A12 in MR0 to “0”, there is a transition
period around power down entry, where the DDR3(L) SDRAM may show either synchronous or asynchronous ODT
behavior.
The transition period is defined by the parameters tANPD and tCPDED(min). tANPD is equal to (WL-1) and is counted
backwards in time from the clock cycle where CKE is first registered low. tCPDED(min) starts with the clock cycle where
CKE is first registered low. The transition period begins with the starting point of tANPD and terminates at the end point of
tCPDED(min). If there is a Refresh command in progress while CKE goes low, then the transition period ends at the later
one of tRFC(min) after the Refresh command and the end point of tCPDED(min). Please note that the actual starting point
at tANPD is excluded from the transition period, and the actual end point at tCPDED(min) and tRFC(min, respectively, are
included in the transition period.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPDmin and
(ODTLon*tCK + tAONmin) and as late as the larger of tAONPDmax and (ODTLon*tCK + tAONmax). ODT de-assertion
during the transition period may result in an RTT change as early as the smaller of tAOFPDmin and (ODTLoff*tCK +
tAOFmin) and as late as the larger of tAOFPDmax and (ODTLoff*tCK + tAOFmax). Note that, if AL has a large value, the
range where RTT is uncertain becomes quite large. Figure 85 shows the three different cases: ODT_A, synchronous
behavior before tANPD; ODT_B has a state change during the transition period; ODT_C shows a state change after the
transition period.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Synchronous to asynchronous transition during Precharge Power Down (with DLL
frozen) entry (AL=0; CWL=5; tANPD=WL-1=4)
T1
T2
T3
T4
T5
NOP
NOP
NOP
NOP
NOP
T6
T7
T8
T9
T10
T11
T12
CK
CK
CMD
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CKE
tANPD
tCPDEDmin
tCPDED
PD entry transition period
Last sync.
ODT
tAOFmin
RTT
RTT
ODTLoff
tAOFmax
Sync. Or
async. ODT
RTT
RTT
tAOFPDmin
tAOFPDmax
ODTLoff+tAOFPDmin
ODTLoff+tAOFPDmax
First async.
ODT
tAOFPDmax
RTT
RTT
tAOFPDmin
Transitioning
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Asynchronous to Synchronous ODT Mode transition during Power-Down Exit
If DLL is selected to be frozen in Precharge Power Down Mode by the setting of bit A12 in MR0 to “0”, there is also a
transition period around power down exit, where either synchronous or asynchronous response to a change in ODT must
be expected from the DDR3(L) SDRAM.
This transition period starts tANPD before CKE is first registered high, and ends tXPDLL after CKE is first registered high.
tANPD is equal to (WL -1) and is counted (backwards) from the clock cycle where CKE is first registered high.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPDmin and (ODTLon*tCK+tAONmin) and as late as the larger of tAONPDmax and (ODTLon*tCK+tAONmax). ODT de-assertion during the transition period may result in an RTT change as early as the smaller of t AOFPDmin and (ODTLoff*tCK+tAOFmin) and as late as
the larger of tAOFPDmax and (ODToff*tCK+tAOFmax). Note that if AL has a large value, the range where RTT is uncertain
becomes quite large. The following figure shows the three different cases: ODT_C, asynchronous response before t ANPD;
ODT_B has a state change of ODT during the transition period; ODT_A shows a state change of ODT after the transition
period with synchronous response.
Asynchronous to synchronous transition during Precharge Power Down (with DLL
frozen) exit (CL=6; AL=CL-1; CWL=5; tANPD=WL-1=9)
T0
T1
T2
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Tb0
Tb1
Tb2
Tc0
Tc1
Tc2
Td0
Td1
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
CK
CKE
CMD
NOP
NOP
NOP
NOP
tANPD
tXPDLL
PD exit transition period
ODT_C
_sync
tAOFPDmin
DRAM
_RTT_
C_sync
RTT
tAOFPDmax
ODT_B
_tran
tAOFPDmin
DRAM
_RTT_
B_tran
RTT
tAOFPDmax
ODTLoff + tAOFmin
ODTLoff + tAOFmax
ODTLoff
ODT_A
_async
tAOFmax
tAOFmin
DRAM_
RTT_A_
async
RTT
Transitioning
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Asynchronous to Synchronous ODT Mode during short CKE high and short CKE low
periods
If the total time in Precharge Power Down state or Idle state is very short, the transition periods for PD entry and PD exit
may overlap. In this case, the response of the DDR3(L) SDRAMs RTT to a change in ODT state at the input may be
synchronous or asynchronous from the state of the PD entry transition period to the end of the PD exit transition period
(even if the entry ends later than the exit period).
If the total time in Idle state is very short, the transition periods for PD exit and PD entry may overlap. In this case, the
response of the DDR3(L) SDRAMs RTT to a change in ODT state at the input may be synchronous or asynchronous from
the start of the PD exit transition period to the end of the PD entry transition period. Note that in the following figure, it is
assumed that there was no Refresh command in progress when Idle state was entered.
Transition period for short CKE cycles with entry and exit period overlapping
(AL=0; WL=5; tANPD=WL-1=4)
T0
T1
T2
T3
REF
NOP
NOP
NOP
T4
T5
T6
NOP
NOP
T7
T8
T9
T10
T11
T12
T13
T14
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
CK
CMD
NOP
NOP
CKE
tANPD
tANPD
PD exit transition period
PD entry transition period
tRFC(min)
tXPDLL
CKE
Short CKE high transition period
tXPDLL
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
ZQ Calibration Commands
ZQ Calibration Description
ZQ Calibration command is used to calibrate DRAM Ron and ODT values. DDR3(L) SDRAM needs longer time to calibrate
output driver and on-die termination circuits at initialization and relatively smaller time to perform periodic calibrations.
ZQCL command is used to perform the initial calibration during power-up initialization sequence. This command may be
issued at any time by the controller depending on the system environment. ZQCL command triggers the calibration engine
inside the DRAM and once calibration is achieved the calibrated values are transferred from calibration engine to DRAM IO
which gets reflected as updated output driver and on-die termination values.
The first ZQCL command issued after reset is allowed a timing period of tZQinit to perform the full calibration and the
transfer of values. All other ZQCL commands except the first ZQCL command issued after RESET is allowed a timing
period of tZQoper.
ZQCS command is used to perform periodic calibrations to account for voltage and temperature variations. A shorter timing
window is provided to perform the calibration and transfer of values as defined by timing parameter tZQCS.
No other activities should be performed on the DRAM channel by the controller for the duration of tZQinit, tZQoper, or
tZQCS. The quiet time on the DRAM channel allows calibration of output driver and on-die termination values. Once DRAM
calibration is achieved, the DRAM should disable ZQ current consumption path to reduce power.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self refresh. Upon self-refresh
exit, DDR3(L) SDRAM will not perform an IO calibration without an explicit ZQ calibration command. The earliest possible
time for ZQ Calibration command (short or long) after self refresh exit is tXS.
In systems that share the ZQ resistor between devices, the controller must not allow any overlap of tZQoper, tZQinit, or
tZQCS between ranks.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
ZQ Calibration Timing
T0
T1
Ta0
Ta1
ZQCL
NOP
NOP
NOP
Ta2
Ta3
Tb0
Tb1
Valid
Valid
ZQCS
Address
Valid
Valid
A10
Valid
Valid
Tc0
Tc1
Tc2
NOP
NOP
Valid
CK
CK
CMD
NOP
Valid
CKE
(1)
Valid
Valid
(1)
Valid
ODT
(2)
Valid
Valid
(2)
Valid
DQ Bus
(3)
Hi-Z
Activities
(3)
tZQinit or tZQoper
Hi-Z
Activities
tZQCS
Do not
care
Time
Break
Note:
1. CKE must be continuously registered high during the calibration procedure.
2. On-die termination must be disabled via the ODT signal or MRS during the calibration procedure.
3. All devices connected to the DQ bus should be high impedance during the calibration procedure.
ZQ External Resistor Value, Tolerance, and Capacitive loading
In order to use the ZQ calibration function, a 240 ohm +/- 1% tolerance external resistor connected between the ZQ pin and
ground. The single resistor can be used for each SDRAM or one resistor can be shared between two SDRAMs if the ZQ
calibration timings for each SDRAM do not overlap. The total capacitive loading on the ZQ pin must be limited.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Absolute Maximum Ratings
Absolute Maximum DC Ratings
Symbol
VDD
VDDQ
Vin, Vout
Tstg
Parameter
Rating
Unit
Note
Voltage on VDD pin relative to Vss
-0.4 V ~ 1.80 V
V
1,3
Voltage on VDDQ pin relative to Vss
-0.4 V ~ 1.80 V
V
1,3
Voltage on any pin relative to Vss
-0.4 V ~ 1.80 V
V
1
-55 ~ 150
C
1,2
Storage Temperature
Note:
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM.
3. VDD and VDDQ must be within 300mV of each other at all times; and Vref must be not greater than 0.6VDDQ, when VDD and
VDDQ are less than 500Mv; Vref may be equal to or less than 300mV.
Refresh parameters by device density
Parameter
Symbol
2Gb
Unit
REF command to ACT or REF command time
tRFC
160
ns
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Temperature Range
Condition
Parameter
Value
Unit
Notes
Normal Operating Temperature Range
0 ≤Toper ≤ 85
C
1
Extended Temperature Range
85 < Toper ≤ 95
C
1,2
Normal Operating Temperature Range
-40 ≤ Toper ≤ 85
C
1
Extended Temperature Range
85 < Toper ≤ 95
C
1,2
Normal Operating Temperature Range
-40 ≤ Toper ≤ 85
C
1
Extended Temperature Range
85 < Toper ≤ 95
C
1,2
Normal Operating Temperature Range
-40 ≤ Toper ≤ 85
C
1
Extended Temperature Range
85 < Toper ≤ 105
C
1,2
Normal Operating Temperature Range
-40 ≤ Toper ≤ 85
C
1
Extended Temperature Range
85 < Toper ≤ 95
C
1,2
Commercial
Quasi Industrial
Industrial
Automotive Grade 2
Automotive Grade 3
Note:
1. Operating Temperature Toper is the case surface temperature on the center/top side of the DRAM.
2. Some applications require operation of the DRAM in the Extended Temperature Range
a) Refresh commands must be doubled in frequency, therefore, reducing the Refresh interval tREFI to 3.9us.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual
Self-Refresh mode with Extended Temperature Range capability (MR2 A6=0 and MR2 A7=1) or enable the optional Auto
Self-Refresh mode (MR2 A6=1 and MR2 A7=0).
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
AC & DC Operating Conditions
Recommended DC Operating Conditions
Symbol
Rating
Parameter
DDR3
VDD
VDDQ
Unit
Min.
Typ.
Max.
1.425
1.5
1.575
Supply Voltage
Note
1,2
V
DDR3L
1.283
1.35
1.45
DDR3
1.425
1.5
1.575
Supply Voltage for Output
3,4,5,6,7
1,2
V
DDR3L
1.283
1.35
1.45
3,4,5,6,7
Note:
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. Maximun DC value may not be great than 1.425V.The DC value is the linear average of VDD/ VDDQ(t) over a very long period of time
(e.g., 1 sec).
4. If maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
5. Under these supply voltages, the device operates to this DDR3L specification.
6. Once initialized for DDR3 operation, DDR3L operation may only be used if the device is in reset while VDD and VDDQ are changed
for DDR3L operation.
7. 1.35V DDR3L are backward compatible to 1.5V DDR3 parts.
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
AC & DC Input Measurement Levels
DDR3 AC and DC Logic Input Levels for Command and Address
DDR3
Symbol
Parameter
800,1066,1333,1600
1866,2133
Min
Max
Min
Max
U
ni
t
Notes
VIH.CA(DC100)
DC input logic high
Vref + 0.1
VDD
Vref + 0.1
VDD
V
1, 5
VIL.CA(DC100)
DC input logic low
VSS
Vref - 0.1
VSS
Vref - 0.1
V
1, 6
VIH.CA(AC175)
AC input logic high
Vref + 0.175
Note 2
-
-
V
1, 2, 7
VIL.CA(AC175)
AC input logic low
Note 2
Vref - 0.175
-
-
V
1, 2, 8
VIH.CA(AC150)
AC input logic high
Vref + 0.150
Note 2
-
-
V
1, 2, 7
VIL.CA(AC150)
AC input logic low
Note 2
Vref - 0.150
-
-
V
1, 2, 8
VIH.CA(AC135)
AC input logic high
-
-
Vref + 0.135
Note 2
V
1, 2, 7
VIL.CA(AC135)
AC input logic low
-
-
Note 2
Vref - 0.135
V
1, 2, 8
VIH.CA(AC125)
AC input logic high
-
-
Vref + 0.125
Note 2
V
1, 2, 7
VIL.CA(AC125)
AC input logic low
-
-
Note 2
Vref - 0.125
V
1, 2, 8
VRefCA(DC)
Reference Voltage for ADD,
CMD inputs
0.49 * VDD
0.51 * VDD
0.49 * VDD
0.51 * VDD
V
3, 4, 9
NOTE 1. For input only pins except REET. Vref = VrefCA(DC).
NOTE 2. See “Overshoot and Undershoot Specifications” .
NOTE 3. The ac peak noise on VRef may not allow VRef to deviate from VRefCA(DC) by more than +/-1% VDD (for reference: approx. +/- 15 mV).
NOTE 4. For reference: approx. VDD/2 +/- 15 mV.
NOTE 5. VIH(dc) is used as a simplified symbol for VIH.CA(DC100)
NOTE 6. VIL(dc) is used as a simplified symbol for VIL.CA(DC100)
NOTE 7. VIH(ac) is used as a simplified symbol for VIH.CA(AC175), VIH.CA(AC150), VIH.CA(AC135), and VIH.CA(AC125); VIH.CA(AC175)
value is used when Vref + 0.175V is referenced, VIH.CA(AC150) value is used when Vref + 0.150V is referenced, VIH.CA(AC135) value
is used when Vref + 0.135V is referenced, and VIH.CA(AC125) value is used when Vref + 0.125V is referenced.
NOTE 8. VIL(ac) is used as a simplified symbol for VIL.CA(AC175), VIL.CA(AC150), VIL.CA(AC135) and VIL.CA(AC125); VIL.CA(AC175) value
is used when Vref - 0.175V is referenced, VIL.CA(AC150) value is used when Vref - 0.150V is referenced, VIL.CA(AC135) value is used
when Vref - 0.135V is referenced, and VIL.CA(AC125) value is used when Vref - 0.125V is referenced.
NOTE 9. VrefCA(DC) is measured relative to VDD at the same point in time on the same device
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
DDR3L AC and DC Logic Input Levels for Command and Address
DDR3L
Symbol
Parameter
1066
1333,1600
1866
Min
Max
Min
Max
Min
Max
Unit
Notes
VIH.CA(DC90)
DC input logic high
Vref + 0.09
VDD
Vref + 0.09
VDD
Vref + 0.09
VDD
V
1
VIL.CA(DC90)
DC input logic low
VSS
Vref - 0.09
VSS
Vref - 0.09
VSS
Vref - 0.09
V
1
VIH.CA(AC160)
AC input logic high
Vref + 0.16
Note 2
Vref + 0.16
Note 2
-
-
V
1,2
VIL.CA(AC160)
AC input logic low
Note 2
Vref - 0.16
Note 2
Vref - 0.16
-
-
V
1,2
VIH.CA(AC135)
AC input logic high
Vref + 0.135
Note 2
Vref + 0.135
Note 2
Vref + 0.135
Note 2
V
1,2
VIL.CA(AC135)
AC input logic low
Note 2
Vref - 0.135
Note 2
Vref - 0.135
Note 2
Vref - 0.135
V
1,2
VIH.CA(AC125)
AC input logic high
-
-
-
-
Vref + 0.125
Note 2
V
1,2
VIL.CA(AC125)
AC input logic low
-
-
-
-
Note 2
Vref - 0.125
V
1,2
0.49 * VDD
0.51 * VDD
0.49 * VDD
0.51 * VDD
0.49 * VDD
0.51 * VDD
V
3,4
VRefCA(DC)
Reference Voltage for
ADD, CMD inputs
NOTE 1 For input only pins except REET. Vref = VrefCA(DC).
NOTE 2 See “Overshoot and Undershoot Specifications”
NOTE 3 The AC peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for reference: approx. +/- 13.5 mV).
NOTE 4 For reference: approx. VDD/2 +/- 13.5 mV
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
DDR3 AC and DC Logic Input Levels for DQ and DM
DDR3
Symbol
Parameter
800,1066
1333,1600
1866,2133
Unit Notes
Min
Max
Min
Max
Min
Max
VIH.DQ(DC100)
DC input logic high
Vref + 0.1
VDD
Vref + 0.1
VDD
Vref + 0.1
VDD
V
1, 5
VIL.DQ(DC100)
DC input logic low
VSS
Vref - 0.1
VSS
Vref - 0.1
VSS
Vref - 0.1
V
1, 6
VIH.DQ(AC175)
AC input logic high
Vref + 0.175
Note 2
-
-
-
-
V
1, 2, 7
VIL.DQ(AC175)
AC input logic low
Note 2
Vref - 0.175
-
-
-
-
V
1, 2, 8
VIH.DQ(AC150)
AC input logic high
Vref + 0.150
Note 2
Vref + 0.150
Note 2
-
-
V
1, 2, 7
VIL.DQ(AC150)
AC input logic low
Note 2
Vref - 0.150
Note 2
Vref - 0.150
-
-
V
1, 2, 8
VIH.DQ(AC135)
AC input logic high
Vref + 0.135
Note 2
Vref + 0.135
Note 2
Vref + 0.135
Note 2
V
1, 2, 7
VIL.DQ(AC135)
AC input logic low
Note 2
Vref - 0.135
Note 2
Vref - 0.135
Note 2
Vref - 0.135
V
1, 2, 8
0.49 * VDD
0.51 * VDD
0.49 * VDD
0.51 * VDD
0.49 * VDD
0.51 * VDD
V
3, 4, 9
VRefDQ(DC)
Reference Voltage
for DQ, DM inputs
NOTE 1. Vref = VrefDQ(DC).
NOTE 2. See “Overshoot and Undershoot Specifications” .
NOTE 3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for reference:approx. +/- 15 mV).
NOTE 4. For reference: approx. VDD/2 +/- 15 mV.
NOTE 5. VIH(dc) is used as a simplified symbol for VIH.DQ(DC100)
NOTE 6. VIL(dc) is used as a simplified symbol for VIL.DQ(DC100)
NOTE 7. VIH(ac) is used as a simplified symbol for VIH.DQ(AC175), VIH.DQ(AC150), and VIH.DQ(AC135);VIH.DQ(AC175) value is used when
Vref + 0.175V is referenced, VIH.DQ(AC150) value is used when Vref + 0.150V is referenced, and VIH.DQ(AC135) value is used when
Vref + 0.135V is referenced.
NOTE 8. VIL(ac) is used as a simplified symbol for VIL.DQ(AC175), VIL.DQ(AC150), and VIL.DQ(AC135);VIL.DQ(AC175) value is used when
Vref - 0.175V is referenced, VIL.DQ(AC150) value is used when Vref -0.150V is referenced, and VIL.DQ(AC135) value is used when
Vref - 0.135V is referenced.
NOTE 9. VrefCA(DC) is measured relative to VDD at the same point in time on the same device
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
DDR3L AC and DC Logic Input Levels for DQ and DM
DDR3L
Symbol
Parameter
1066
1333,1600
1866
Unit
Min
Max
Min
Max
Min
Max
VIH.DQ(DC90)
DC input logic high
Vref + 0.09
VDD
Vref + 0.09
VDD
Vref + 0.09
VDD
V
VIL.DQ(DC90)
DC input logic low
VSS
Vref - 0.09
VSS
Vref - 0.09
VSS
Vref - 0.09
V
Vref + 0.16
Note 2
Vref + 0.16
Note 2
-
-
V
Note 2
Vref - 0.16
Note 2
Vref - 0.16
-
-
V
Note 2
Vref + 0.135
Note 2
Vref + 0.135
Note 2
V
VIH.DQ(AC160) AC input logic high
VIL.DQ(AC160)
AC input logic low
VIH.DQ(AC135) AC input logic high Vref + 0.135
V
Notes
1
1
1,2
1,2
1,2
1,2
VIL.DQ(AC135)
AC input logic low
Note 2
Vref - 0.135
Note 2
Vref - 0.135
Note 2
Vref - 0.135
VIH.DQ(AC130)
AC input logic high
-
-
-
-
Vref + 0.13
Note 2
VIL.DQ(AC130)
AC input logic low
-
-
-
-
Note 2
Vref - 0.13
V
1,2
0.49 * VDD
0.51 * VDD
0.49 * VDD
0.51 * VDD
0.49 * VDD
0.51 * VDD
V
3,4
VRefDQ(DC)
Reference Voltage
for DQ, DM inputs
V
1,2
NOTE 1 For input only pins except REET. Vref = VrefDQ(DC).
NOTE 2 See “Overshoot and Undershoot Specifications”.
NOTE 3 The AC peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for reference: approx. +/- 13.5 mV).
NOTE 4 For reference: approx. VDD/2 +/- 13.5 mV.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Vref Tolerances
The dc-tolerance limits and ac-noise limits for the reference voltages VrefCA and VrefDQ are illustrated in the following
figure. It shows a valid reference voltage Vref(t) as a function of time. (Vref stands for VrefCA and VrefDQ likewise).
Vref(DC) is the linear average of Vref(t) over a very long period of time (e.g.,1 sec). This average has to meet the min/max
requirement in previous page. Furthermore Vref(t) may temporarily deviate from Vref(DC) by no more than ±1% VDD.
The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC), and VIL(DC) are dependent on Vref.
“Vref” shall be understood as Vref(DC).
The clarifies that dc-variations of Vref affect the absolute voltage a signal has to reach to achieve a valid high or low level
and therefore the time to which setup and hold is measured. System timing and voltage budgets need to account for
Vref(DC) deviations from the optimum position within the data-eye of the input signals.
This also clarifies that the DRAM setup/hold specification and de-rating values need to include time and voltage associated
with Vref ac-noise. Timing and voltage effects due to ac-noise on Vref up to the specified limit (±1% of VDD) are included in
DRAM timing and their associated de-ratings.
Illustration of Vref(DC) tolerance and Vrefac-noise limits
Voltage
VDD
Vref ac-noise
VRef(t)
Vref(DC)max
Vref(DC)
VDD/2
Vref(DC)min
VSS
time
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
DDR3 Differential AC and DC Input Levels for clock (CK - ) and strobe (DQS - )
DDR3-800, 1066, 1333, & 1600
Symbol
Parameter
Min
Max
Unit
Notes
VIHdiff
Differential input high
+ 0.200
Note 3
V
1
VILdiff
Differential input logic low
Note 3
- 0.200
V
1
VIHdiff(ac)
Differential input high ac
2 x (VIH(ac) - Vref)
Note 3
V
2
VILdiff(ac)
Differential input low ac
Note 3
2 x (VIL(ac) - Vref)
V
2
NOTE 1. Used to define a differential signal slew-rate.
NOTE 2. For CK - use VIH/VIL(ac) of ADD/CMD and VREFCA; for DQS - , DQSL, L, DQSU ,U use VIH/VIL(ac) of
DQs and VREFDQ; if a reduced ac-high or ac-low level is used for a signal group,then the reduced level applies also here.
NOTE 3. These values are not defined; however, the single-ended signals CK, , DQS, , DQSL, L, DQSU,
U need to be within the respective limits (VIH(dc) max, VIL(dc)min) for single-ended signals as well as the limitations for
overshoot and undershoot. Refer to “Overshoot and Undershoot Specifications”
DDR3L Differential AC and DC Input Levels for clock (CK - ) and strobe (DQS - )
DDR3L-1066, 1333, 1600 & 1866
Symbol
Parameter
Min
Max
Unit
Notes
VIHdiff
Differential input high
+ 0.180
Note 3
V
1
VILdiff
Differential input logic low
Note 3
- 0.180
V
1
VIHdiff(ac)
Differential input high ac
2 x (VIH(ac) - Vref)
Note 3
V
2
VILdiff(ac)
Differential input low ac
Note 3
2 x (VIL(ac) - Vref)
V
2
NOTE 1 Used to define a differential signal slew-rate.
NOTE 2 For CK - use VIH/VIL(AC) of ADD/CMD and VREFCA; for DQS - , DQSL, L, DQSU , U use VIH/VIL(AC) of
DQs and VREFDQ; if a reduced AC-high or AC-low level is used for a signal group, then the reduced level applies also here.
NOTE 3 These values are not defined, however the single-ended signals CK, , DQS, , DQSL, L, DQSU, U need to be
within the respective limits (VIH(DC) max, VIL(DC)min) for single-ended signals as well as the limitations for overshoot and
undershoot. Refer to “Overshoot and Undershoot Specifications”.
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Differential Input Voltage (i.e. DQS – DQS, CK – CK)
Definition of differential ac-swing and “time above ac-level”
tDVAC
VIH.Diff.AC.min
VIH.Diff. DC min
0
Half cycle
VIL. Diff. DC max
VIL.Diff.AC.max
tDVAC
Time
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
DDR3 Allowed time before ringback (tDVAC) for CK - and DQS -
DDR3-800 / 1066 / 1333 / 1600
Slew Rate
tDVAC [ps]
[V/ns]
@ |VIH/Ldiff(AC)| =
350mV
DDR3-1866 / 2133
tDVAC [ ps ]
tDVAC [ ps ]
tDVAC [ ps ]
tDVAC [ ps ]
@ |VIH/Ldiff(AC)| =
@ |VIH/Ldiff(AC)| =
@ |VIH/Ldiff(AC)| =
@ |VIH/Ldiff(AC)| =
300mV
(DQS - ) only
300mV
(CK - ) only
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
> 4.0
75
-
175
-
214
-
134
-
139
-
4.0
57
-
170
-
214
-
134
-
139
-
3.0
50
-
167
-
191
-
112
-
118
-
2.0
38
-
119
-
146
-
67
-
77
-
1.8
34
-
102
-
131
-
52
-
63
-
1.6
29
-
81
-
113
-
33
-
45
-
1.4
22
-
54
-
88
-
9
-
23
-
1.2
note
-
19
-
56
-
note
-
note
-
1.0
note
-
note
-
11
-
note
-
note
-
< 1.0
note
-
note
-
note
-
note
-
note
-
NOTE 1. Rising input differential signal shall become equal to or greater than VIHdiff(ac) level and Falling input differential signal shall become
equal to or less than VILdiff(ac) level.
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
DDR3L Allowed time before ringback (tDVAC) for CK - and DQS -
DDR3L-1066/1333/1600
Slew Rate
[V/ns]
tDVAC [ps]
@|VIH/Ldiff(AC)| =
320 mV
DDR3L-1866
tDVAC [ps]
@|VIH/Ldiff(AC)| =
270 mV
tDVAC [ps]
@|VIH/Ldiff(AC)| =
270 mV
tDVAC [ps]
@|VIH/Ldiff(AC)| =
250 mV
tDVAC [ps]
@|VIH/Ldiff(AC)| =
260 mV
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
> 4.0
189
-
201
-
163
-
168
-
176
-
4.0
189
-
201
-
163
-
168
-
176
-
3.0
162
-
179
-
140
-
147
-
154
-
2.0
109
-
134
-
95
-
105
-
111
-
1.8
91
-
119
-
80
-
91
-
97
-
1.6
69
-
100
-
62
-
74
-
78
-
1.4
40
-
76
-
37
-
52
-
56
-
1.2
note
-
44
-
5
-
22
-
24
-
1.0
note
-
note
-
note
-
note
-
note
-
< 1.0
note
-
note
-
note
-
note
-
note
-
NOTE 1. Rising input differential signal shall become equal to or greater than VIHdiff(ac) level and Falling input differential signal shall become
equal to or less than VILdiff(ac) level.
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Single-ended requirements for differential signals
Each individual component of a differential signal (CK, DQS, DQSL, DQSU, , ,L, or U) has also to comply
with certain requirements for single-ended signals.
CK and have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH (ac) / VIL (ac)) for
ADD/CMD signals) in every half-cycle. DQS, DQSL, DQSU, , L have to reach VSEHmin / VSELmax (approximately the ac-levels (VIH (ac) / VIL (ac)) for DQ signals) in every half-cycle proceeding and following a valid transition.
Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g., if VIH150
(ac)/VIL150(ac) is used for ADD/CMD signals, then these ac-levels apply also for the single ended signals CK and
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Single-ended levels for CK, DQS, DQSL, DQSU, , , L, or U
DDR3-800, DDR3(L)-1066, 1333, & 1600
Symbol
Parameter
Unit
Notes
note3
V
1, 2
(VDDQ/2) + 0.175
note3
V
1, 2
Single-ended low-level for strobes
note3
(VDDQ/2) - 0.175
V
1, 2
Single-ended Low-level for CK,
note3
(VDDQ/2) - 0.175
V
1, 2
Min.
Max.
Single-ended high-level for strobes
(VDDQ/2) + 0.175
Single-ended high-level for CK,
VSEH
VSEL
Note:
1. For CK, use VIH/VIL(ac) of ADD/CMD; for strobes (DQS, DQSL, DQSU, CK, , L, or U) use VIH/VIL(ac) of DQs.
2. VIH(ac)/VIL(ac) for DQs is based on VREFDQ; VIH(ac)/VIL(ac) for ADD/CMD is based on VREFCA; if a reduced ac-high or ac-low
level is used for a signal group, then the reduced level applies also there.
3. These values are not defined, however the single-ended signals CK, , DQS, , DQSL, L, DQSU, U need to be within
the respective limits (VIH(dc)max, VIL(dc)min) for single-ended signals as well as limitations for overshoot and undershoot.
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross
point voltage of differential input signals (CK, and DQS, ) must meet the requirements in the following table. The
differential input cross point voltage Vix is measured from the actual cross point of true and complete signal to the midlevel
between of VDD and VSS.
Vix Definition
VDD
,
VIX
VSEH
VDD/2
VIX
VIX
CK,DQS
VSEL
VSS
Cross point voltage for differential input signals (CK, DQS)
Symbol
VIX(CK)
VIX(DQS)
Note 1
Parameter
DDR3
DDR3L
800/1066/1333/1600/
1866/2133
1066/1333/1600/
1866
Differential Input Cross Point
Voltage relative to
VDD/2 for CK,
Differential Input Cross Point
Voltage relative to
VDD/2 for DQS,
Min
Max
- 150
+ 150
- 175
+ 175
- 150
+ 150
Min
Max
- 150
+ 150
- 150
+ 150
Unit
Notes
mV
1
mV
2
mV
1
The relation between Vix Min/Max and VSEL/VSEH should satisfy following:
(VDD/2) + VIX (min) - VSEL >= 25 mV ;
VSEH - ((VDD/2) + VIX (max)) >= 25 mV;
Note 2
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Extended range for Vix is only allowed for clock and if single-ended clock input signals CK and are monotonic with a
single-ended swing VSEL / VSEH of at least VDD/2 +/-250 mV, and when the differential slew rate of CK - is larger
than 3 V/ns.
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Slew Rate Definition for Differential Input Signals
Input slew rate for differential signals (CK, and DQS, ) are defined and measured as shown below.
Differential Input Slew Rate Definition
Measured
Description
Defined by
From
To
Differential input slew rate for rising edge
(CK-& DQS-)
VILdiffmax
VIHdiffmin
[VIHdiffmin-VILdiffmax] / DeltaTRdiff
Differential input slew rate for falling edge
(CK- & DQS-)
VIHdiffmin
VILdiffmax
[VIHdiffmin-VILdiffmax] / DeltaTFdiff
The differential signal (i.e., CK-& DQS-) must be linear between these thresholds.
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Input Nominal Slew Rate Definition for single ended signals
Delta
TRdiff
VIHdiffMin
0
VILdiffMax
Delta
TFdiff
AC and DC Output Measurement Levels
Single Ended AC and DC Output Levels
Symbol
Parameter
DDR3(L)
Unit
Notes
VOH(DC)
DC output high measurement level (for IV curve linearity)
0.8xVDDQ
V
VOM(DC)
DC output mid measurement level (for IV curve linearity)
0.5xVDDQ
V
VOL(DC)
DC output low measurement level (fro IV curve linearity)
0.2xVDDQ
V
VOH(AC)
AC output high measurement level (for output SR)
VTT+0.1xVDDQ
V
1
VOL(AC)
AC output low measurement level (for output SR)
VTT-0.1xVDDQ
V
1
Note:
1. The swing of ±0.1 x VDDQ is based on approximately 50% of the static single ended output high or low swing with a driver
impedance of 40 Ω and an effective test load of 25 Ω to VTT = VDDQ/2.
Differential AC and DC Output Levels
Symbol
Parameter
DDR3(L)
Unit
Notes
VOHdiff(AC)
AC differential output high measurement level (for output SR)
+0.2 x VDDQ
V
1
VOLdiff(AC)
AC differential output low measurement level (for output SR)
-0.2 x VDDQ
V
1
Note:
1. The swing of ± 0.2 x VDDQ is based on approximately 50% of the static differential output high or low swing with a driver
impedance of 40 Ω and an effective test load of 25 Ω to VTT=VDDQ/2 at each of the differential outputs.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Single Ended Output Slew Rate
Measured
Description
Defined by
From
To
Single ended output slew rate for rising edge
VOL(AC)
VOH(AC)
[VOH(AC)-VOL(AC)] / DeltaTRse
Single ended output slew rate for falling edge
VOH(AC)
VOL(AC)
[VOH(AC)-VOL(AC)] / DeltaTFse
Note: Output slew rate is verified by design and characterization, and may not be subject to production test.
Single Ended Output Slew Rate Definition
Delta TFse
Single Ended Output Voltage (i.e. DQ)
VOH (AC)
VTT
VOL (AC)
Delta TFse
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Output Slew Rate (Single-ended)
800
Parameter
Single-ended
Output Slew
Rate
Symbol
1066
1333
1600
1866
2133
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
DDR3
2.5
5
2.5
5
2.5
5
2.5
5
2.5
5
2.5
5
V/ns
DDR3L
1.75
5
1.75
5
1.75
5
1.75
5
1.75
5
1.75
5
V/ns
SRQse
Description: SR: Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
se: Single-ended Signals
For Ron = RZQ/7 setting
Note 1): In two cases, a maximum slew rate of 6V/ns applies for a single DQ signal within a byte lane.
Case 1 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high to low or low to high)
while all remaining DQ signals in the same byte lane are static (i.e. they stay at either high or low).
Case 2 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high to low or low to high)
while all remaining DQ signals in the same byte lane are switching into the opposite direction (i.e. from low to high or high to low
respectively). For the remaining DQ signal switching into the opposite direction, the regular maximum limit of 5 V/ns applies.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Differential Output Slew Rate
Measured
Description
Defined by
From
To
Differential output slew rate for rising edge
VOLdiff(AC)
VOHdiff(AC)
[VOHdiff(AC)-VOLdiff(AC)] / DeltaTRdiff
Differential output slew rate for falling edge
VOHdiff(AC)
VOLdiff(AC)
[VOHdiff(AC)-VOLdiff(AC)] / DeltaTFdiff
Note: Output slew rate is verified by design and characterization, and may not be subject to production test.
Differential Output Slew Rate Definition
Differential Output Voltage (i.e. DQS-DQS)
Delta TRdiff
V Oh diff (AC)
0
VOL diff (AC)
Delta TRdiff
Output Slew Rate (Differential)
800
Parameter
Differential
Output Slew
Rate
Symbol
1066
1333
1600
1866
2133
DDR3
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
5
10
5
10
5
10
5
10
5
12
5
12
V/ns
3.5
12
3.5
12
3.5
12
3.5
12
3.5
12
3.5
12
V/ns
SRQdiff
DDR3L
Description:
SR: Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
diff: Differential Signals
For Ron = RZQ/7 setting
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Reference Load for AC Timing and Output Slew Rate
The following figure represents the effective reference load of 25 ohms used in defining the relevant AC timing parameters
of the device as well as output slew rate measurements.
It is not intended as a precise representation of any particular system environment or a depiction of the actual load
presented by a production tester. System designers should use IBIS or other simulation tools to correlate the timing
reference load to a system environment. Manufacturers correlate to their production test conditions, generally one or more
coaxial transmission lines terminated at the tester electronics.
VDDQ
CK ,
25 Ohm
DUT
Vtt = VDDQ/2
DQ
DQS
Timing Reference Points
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Overshoot and Undershoot Specifications
AC Overshoot/Undershoot Specification for Address and Control Pins
-
800
1066
1333
1600
1866
2133
Unit
Maximum peak amplitude allowed for overshoot area
0.4
0.4
0.4
0.4
0.4
0.4
V
Maximum peak amplitude allowed for undershoot area.
0.4
0.4
0.4
0.4
0.4
0.4
V
Maximum overshoot area above VDD
0.67
0.5
0.4
0.33
0.28
0.25
V-ns
Maximum undershoot area below VSS
0.67
0.5
0.4
0.33
0.28
0.25
V-ns
NOTE 1. The sum of the applied voltage (VDD) and peak amplitude overshoot voltage is not to exceed absolute maximum DC ratings
NOTE 2. The sum of applied voltage (VDD) and the peak amplitude undershoot voltage is not to exceed absolute maximum DC ratings
Maximum Amplitude
Volts (V)
Overshoot Area
VDD
VSS
Maximum Amplitude
Undershoot Area
Time (ns)
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Overshoot and Undershoot Specifications
AC Overshoot/Undershoot Specification for Clock, Data, Strobe and Mask
800
1066
1333
1600
1866
2133
Unit
Maximum peak amplitude allowed for overshoot area
0.4
0.4
0.4
0.4
0.4
0.4
V
Maximum peak amplitude allowed for undershoot area.
0.4
0.4
0.4
0.4
0.4
0.4
V
Maximum overshoot area above VDD
0.25
0.19
0.15
0.13
0.11
0.10
V-ns
Maximum undershoot area below VSS
0.25
0.19
0.15
0.13
0.11
0.10
V-ns
NOTE 1. The sum of the applied voltage (VDD) and peak amplitude overshoot voltage is not to exceed absolute maximum DC ratings
NOTE 2. The sum of applied voltage (VDD) and the peak amplitude undershoot voltage is not to exceed absolute maximum DC ratings
Maximum Amplitude
Volts (V)
Overshoot Area
VDDQ
VSSQ
Maximum Amplitude
Undershoot Area
Time (ns)
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
34 Ohm Output Driver DC Electrical Characteristics
A Functional representation of the output buffer is shown as below. Output driver impedance RON is defined by the value of
the external reference resistor RZQ as follows:
RON34 = RZQ / 7 (nominal 34.4ohms +/-10% with nominal RZQ=240ohms)
The individual pull-up and pull-down resistors (RONPu and RONPd) are defined as follows:
RONPu =
RONPd =
VDDQ – VOut
under the condition that RONPd is turned off
(1)
under the condition that RONPu is turned off
(2)
| IOut |
VOut
| IOut |
Output Driver: Definition of Voltages and Currents
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Output Driver DC Electrical Characteristics, assuming RZQ = 240ohms; entire
operating temperature range; after proper ZQ calibration
RONNom
Resistor
Vout
Min.
Nom.
Max.
Unit
Notes
VOLdc = 0.2 x VDDQ
0.6
1.0
1.15
RZQ / 7
1,2,3
VOMdc = 0.5 x VDDQ
0.9
1.0
1.15
RZQ / 7
1,2,3
VOHdc = 0.8 x VDDQ
0.9
1.0
1.45
RZQ / 7
1,2,3
VOLdc = 0.2 x VDDQ
0.9
1.0
1.45
RZQ / 7
1,2,3
VOMdc = 0.5 x VDDQ
0.9
1.0
1.15
RZQ / 7
1,2,3
VOHdc = 0.8 x VDDQ
0.6
1.0
1.15
RZQ / 7
1,2,3
VOLdc = 0.2 × VDDQ
0.6
1.0
1.15
RZQ / 6
1,2,3
VOMdc = 0.5 × VDDQ
0.9
1.0
1.15
RZQ / 6
1,2,3
VOHdc = 0.8 × VDDQ
0.9
1.0
1.45
RZQ / 6
1,2,3
VOLdc = 0.2 × VDDQ
0.9
1.0
1.45
RZQ / 6
1,2,3
VOMdc = 0.5 × VDDQ
0.9
1.0
1.15
RZQ / 6
1,2,3
VOHdc = 0.8 × VDDQ
0.6
1.0
1.15
RZQ / 6
1,2,3
VOMdc = 0.5 x VDDQ
-10
+10
%
1,2,4
DDR3L
RON34Pd
34 ohms
RON34Pu
RON40Pd
40 ohms
RON40Pu
Mismatch between pull-up and pull-down,
MMPuPd
DDR3
RON34Pd
VOLdc = 0.2 x VDDQ
0.6
1.0
1.1
RZQ / 7
1,2,3
VOMdc = 0.5 x VDDQ
0.9
1.0
1.1
RZQ / 7
1,2,3
VOHdc = 0.8 x VDDQ
0.9
1.0
1.4
RZQ / 7
1,2,3
VOLdc = 0.2 x VDDQ
0.9
1.0
1.4
RZQ / 7
1,2,3
VOMdc = 0.5 x VDDQ
0.9
1.0
1.1
RZQ / 7
1,2,3
VOHdc = 0.8 x VDDQ
0.6
1.0
1.1
RZQ / 7
1,2,3
VOLdc = 0.2 × VDDQ
0.6
1.0
1.1
RZQ / 6
1,2,3
VOMdc = 0.5 × VDDQ
0.9
1.0
1.1
RZQ / 6
1,2,3
VOHdc = 0.8 × VDDQ
0.9
1.0
1.4
RZQ / 6
1,2,3
VOLdc = 0.2 × VDDQ
0.9
1.0
1.4
RZQ / 6
1,2,3
VOMdc = 0.5 × VDDQ
0.9
1.0
1.1
RZQ / 6
1,2,3
VOHdc = 0.8 × VDDQ
0.6
1.0
1.1
RZQ / 6
1,2,3
VOMdc = 0.5 x VDDQ
-10
+10
%
1,2,4
34 ohms
RON34Pu
RON40Pd
40 ohms
RON40Pu
Mismatch between pull-up and pull-down,
MMPuPd
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
NOTE 1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance
limits if temperature or voltage changes after calibration, see following section on voltage and temperature sensitivity.
NOTE 2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.
NOTE 3. Pull-down and pull-up output driver impedances are recommended to be calibrated at 0.5 x VDDQ. Other calibration
schemes may be used to achieve the linearity spec shown above, e.g. calibration at 0.2 x VDDQ and 0.8 x VDDQ.
NOTE 4. Measurement definition for mismatch between pull-up and pull-down, MMPuPd:
Measure RONPu and RONPd, both at 0.5 * VDDQ:
MMPuPd =
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RonNom
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Output Driver Temperature and Voltage sensitivity
If temperature and/or voltage after calibration, the tolerance limits widen according to the following table.
Delta T = T - T(@calibration); Delta V = VDDQ - VDDQ(@calibration); VDD = VDDQ
Note: dRONdT and dRONdV are not subject to production test but are verified by design and characterization.
Output Driver Sensitivity Definition
Items
Min.
Max.
Unit
RONPU@VOHdc
0.6 - dRONdTH*lDelta Tl - dRONdVH*lDelta Vl
1.1 + dRONdTH*lDelta Tl - dRONdVH*lDelta Vl
RZQ/7
RON@VOMdc
0.9 - dRONdTM*lDelta Tl - dRONdVM*lDelta Vl
1.1 + dRONdTM*lDelta Tl - dRONdVM*lDelta Vl
RZQ/7
RONPD@VOLdc
0.6 - dRONdTL*lDelta Tl - dRONdVL*lDelta Vl
1.1 + dRONdTL*lDelta Tl - dRONdVL*lDelta Vl
RZQ/7
Output Driver Voltage and Temperature Sensitivity
Speed Bin
DDR3-800, DDR3(L)-1066/1333
DDR3(L)-1600
Unit
Items
Min.
Max.
Min.
Max.
dRONdTM
0
1.5
0
1.5
%/C
dRONdVM
0
0.15
0
0.13
%/mV
dRONdTL
0
1.5
0
1.5
%/C
dRONdVL
0
0.15
0
0.13
%/mV
dRONdTH
0
1.5
0
1.5
%/C
dRONdVH
0
0.15
0
0.13
%/mV
Note: These parameters may not be subject to production test. They are verified by design and characterization.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
On-Die Termination (ODT) Levels and I-V Characteristics
On-Die Termination effective resistance RTT is defined by bits A9, A6, and A2 of the MR1 Register.
ODT is applied to the DQ, DM, DQS/, and TDQS/T (x8 devices only) pins.
A functional representation of the on-die termination is shown in the following figure. The individual pull-up and pull-down
resistors (RTTPu and RTTPd) are defined as follows:
RTTPu =
RTTPd =
VDDQ – VOut
under the condition that RTTPd is turned off
(3)
under the condition that RTTPu is turned off
(4)
| IOut |
VOut
| IOut |
On-Die Termination: Definition of Voltages and Currents
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
ODT DC Electrical Characteristics
The following table provides an overview of the ODT DC electrical characteristics. The values for RTT60Pd120, RTT60Pu120,
RTT120Pd240, RTT120Pu240, RTT40Pd80, RTT40Pu80, RTT30Pd60, RTT30Pu60, RTT20Pd40, RTT20Pu40 are not specification
requirements, but can be used as design guide lines:
ODT DC Electrical Characteristics, assuming RZQ = 240ohms +/- 1% entire operating
temperature range; after proper ZQ calibration(DDR3L)
MR1 A9,A6,A2
RTT
Resistor
Vout
Min.
Nom.
Max.
Unit
Notes
VOLdc = 0.2 x VDDQ
0.6
1
1.15
RZQ
1,2,3,4
0.5 x VDDQ
0.9
1
1.15
RZQ
1,2,3,4
VOHdc = 0.8 x VDDQ
0.9
1
1.45
RZQ
1,2,3,4
VOLdc = 0.2 x VDDQ
0.9
1
1.45
RZQ
1,2,3,4
0.5 x VDDQ
0.9
1
1.15
RZQ
1,2,3,4
VOHdc = 0.8 x VDDQ
0.6
1
1.15
RZQ
1,2,3,4
VIL(ac) to VIH(ac)
0.9
1
1.65
RZQ /2
1,2,5
VOLdc = 0.2 x VDDQ
0.6
1
1.15
RZQ/2
1,2,3,4
0.5 x VDDQ
0.9
1
1.15
RZQ/2
1,2,3,4
VOHdc = 0.8 x VDDQ
0.9
1
1.45
RZQ/2
1,2,3,4
VOLdc = 0.2 x VDDQ
0.9
1
1.45
RZQ/2
1,2,3,4
0.5 x VDDQ
0.9
1
1.15
RZQ/2
1,2,3,4
VOHdc = 0.8 x VDDQ
0.6
1
1.15
RZQ/2
1,2,3,4
DDR3L
RTT120Pd240
0,1,0
120Ω
RTT120Pu240
RTT120
RTT60Pd120
0, 0, 1
60Ω
RTT60Pu120
RTT60
RTT40Pd80
0, 1, 1
40Ω
RTT40Pu80
RTT40
RTT30Pd60
1, 0, 1
30Ω
RTT30Pu60
RTT30
RTT20Pd40
1, 0, 0
20Ω
RTT20Pu40
RTT20
VIL(ac) to VIH(ac)
0.9
1
1.65
RZQ/4
1,2,5
VOLdc = 0.2 x VDDQ
0.6
1
1.15
RZQ/3
1,2,3,4
0.5 x VDDQ
0.9
1
1.15
RZQ/3
1,2,3,4
VOHdc = 0.8 x VDDQ
0.9
1
1.45
RZQ/3
1,2,3,4
VOLdc = 0.2 x VDDQ
0.9
1
1.45
RZQ/3
1,2,3,4
0.5 x VDDQ
0.9
1
1.15
RZQ/3
1,2,3,4
VOHdc = 0.8 x VDDQ
0.6
1
1.15
RZQ/3
1,2,3,4
VIL(ac) to VIH(ac)
0.9
1
1.65
RZQ/6
1,2,5
VOLdc = 0.2 x VDDQ
0.6
1
1.15
RZQ/4
1,2,3,4
0.5 x VDDQ
0.9
1
1.15
RZQ/4
1,2,3,4
VOHdc = 0.8 x VDDQ
0.9
1
1.45
RZQ/4
1,2,3,4
VOLdc = 0.2 x VDDQ
0.9
1
1.45
RZQ/4
1,2,3,4
0.5 x VDDQ
0.9
1
1.15
RZQ/4
1,2,3,4
VOHdc = 0.8 x VDDQ
0.6
1
1.15
RZQ/4
1,2,3,4
VIL(ac) to VIH(ac)
0.9
1
1.65
RZQ/8
1,2,5
VOLdc = 0.2 x VDDQ
0.6
1
1.15
RZQ/6
1,2,3,4
0.5 x VDDQ
0.9
1
1.15
RZQ/6
1,2,3,4
VOHdc = 0.8 x VDDQ
0.9
1
1.45
RZQ/6
1,2,3,4
VOLdc = 0.2 x VDDQ
0.9
1
1.45
RZQ/6
1,2,3,4
0.5 x VDDQ
0.9
1
1.15
RZQ/6
1,2,3,4
VOHdc = 0.8 x VDDQ
0.6
1
1.15
RZQ/6
1,2,3,4
VIL(ac) to VIH(ac)
0.9
1
1.65
RZQ/12
1,2,5
+5
%
1,2,5,6
Deviation of VM w.r.t. VDDQ/2, DVM
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
ODT DC Electrical Characteristics, assuming RZQ = 240ohms +/- 1% entire operating
temperature range; after proper ZQ calibration (DDR3)
MR1 A9,A6,A2
RTT
Resistor
Vout
Min.
Nom.
Max.
Unit
Notes
VOLdc = 0.2 x VDDQ
0.6
1
1.1
RZQ
1,2,3,4
DDR3
RTT120Pd240
0,1,0
120Ω
RTT120Pu240
RTT120
RTT60Pd120
0, 0, 1
60Ω
RTT60Pu120
RTT60
RTT40Pd80
0, 1, 1
40Ω
RTT40Pu80
RTT40
RTT30Pd60
1, 0, 1
30Ω
RTT30Pu60
RTT30
RTT20Pd40
1, 0, 0
20Ω
RTT20Pu40
RTT20
0.5 x VDDQ
0.9
1
1.1
RZQ
1,2,3,4
VOHdc = 0.8 x VDDQ
0.9
1
1.4
RZQ
1,2,3,4
VOLdc = 0.2 x VDDQ
0.9
1
1.4
RZQ
1,2,3,4
0.5 x VDDQ
0.9
1
1,1
RZQ
1,2,3,4
VOHdc = 0.8 x VDDQ
0.6
1
1.1
RZQ
1,2,3,4
VIL(ac) to VIH(ac)
0.9
1
1.6
RZQ /2
1,2,5
VOLdc = 0.2 x VDDQ
0.6
1
1.1
RZQ/2
1,2,3,4
0.5 x VDDQ
0.9
1
1.1
RZQ/2
1,2,3,4
VOHdc = 0.8 x VDDQ
0.9
1
1.4
RZQ/2
1,2,3,4
VOLdc = 0.2 x VDDQ
0.9
1
1.4
RZQ/2
1,2,3,4
0.5 x VDDQ
0.9
1
1.1
RZQ/2
1,2,3,4
VOHdc = 0.8 x VDDQ
0.6
1
1.1
RZQ/2
1,2,3,4
VIL(ac) to VIH(ac)
0.9
1
1.6
RZQ/4
1,2,5
VOLdc = 0.2 x VDDQ
0.6
1
1.1
RZQ/3
1,2,3,4
0.5 x VDDQ
0.9
1
1.1
RZQ/3
1,2,3,4
VOHdc = 0.8 x VDDQ
0.9
1
1.4
RZQ/3
1,2,3,4
VOLdc = 0.2 x VDDQ
0.9
1
1.4
RZQ/3
1,2,3,4
0.5 x VDDQ
0.9
1
1.1
RZQ/3
1,2,3,4
VOHdc = 0.8 x VDDQ
0.6
1
1.1
RZQ/3
1,2,3,4
VIL(ac) to VIH(ac)
0.9
1
1.6
RZQ/6
1,2,5
VOLdc = 0.2 x VDDQ
0.6
1
1.1
RZQ/4
1,2,3,4
0.5 x VDDQ
0.9
1
1.1
RZQ/4
1,2,3,4
VOHdc = 0.8 x VDDQ
0.9
1
1.4
RZQ/4
1,2,3,4
VOLdc = 0.2 x VDDQ
0.9
1
1.4
RZQ/4
1,2,3,4
0.5 x VDDQ
0.9
1
1.1
RZQ/4
1,2,3,4
VOHdc = 0.8 x VDDQ
0.6
1
1.1
RZQ/4
1,2,3,4
VIL(ac) to VIH(ac)
0.9
1
1.6
RZQ/8
1,2,5
VOLdc = 0.2 x VDDQ
0.6
1
1.1
RZQ/6
1,2,3,4
0.5 x VDDQ
0.9
1
1.1
RZQ/6
1,2,3,4
VOHdc = 0.8 x VDDQ
0.9
1
1.4
RZQ/6
1,2,3,4
VOLdc = 0.2 x VDDQ
0.9
1
1.4
RZQ/6
1,2,3,4
0.5 x VDDQ
0.9
1
1.1
RZQ/6
1,2,3,4
VOHdc = 0.8 x VDDQ
0.6
1
1.1
RZQ/6
1,2,3,4
VIL(ac) to VIH(ac)
0.9
1
1.6
RZQ/12
1,2,5
+5
%
1,2,5,6
Deviation of VM w.r.t. VDDQ/2, DVM
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NOTE 1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits
if temperature or voltage changes after calibration, see following section on voltage and temperature sensitivity.
NOTE 2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.
NOTE 3. Pull-down and pull-up ODT resistors are recommended to be calibrated at 0.5 x VDDQ. Other calibration schemes may be
used to achieve the linearity spec shown above, e.g. calibration at 0.2 x VDDQ and 0.8 x VDDQ.
NOTE 4. Not a specification requirement, but a design guide line.
NOTE 5. Measurement definition for RTT:
Apply VIH(ac) to pin under test and measure current I(VIH(ac)), then apply VIL(ac) to pin under test and measure current
I(VIL(ac)) respectively.
RTT =
VIH(ac) – VIL(ac)
I(VIH(ac)) – I(VIL(ac))
NOTE 6. Measurement definition for VM and DVM:
Measure voltage (VM) at test pin (midpoint) with no load:
△VM
= (
2 x VM
– 1) x 100
VDDQ
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
ODT Temperature and Voltage sensitivity
If temperature and/or voltage after calibration, the tolerance limits widen according to the following table.
Delta T = T - T(@calibration); Delta V = VDDQ - VDDQ(@calibration); VDD = VDDQ
ODT Sensitivity Definition
Min.
RTT
Max.
0.9 – dRTTdT * l△Tl – dRTTdV * l△Vl
Unit
1.6 + dRTTdT * l△Tl + dRTTdV * l△Vl
RZQ/2,4,6,8,12
ODT Voltage and Temperature Sensitivity
Min.
Max.
Unit
dRTTdT
0
1.5
%/C
dRTTdV
0
0.15
%/mV
Note: These parameters may not be subject to production test. They are verified by design and characterization.
Test Load for ODT Timings
Different than for timing measurements, the reference load for ODT timings is defined in the following figure.
VDDQ
CK ,
DUT
RTT=
25 Ohm
Vtt = VSSQ
DQ , DM
DQS ,
TDQS , T
Timing Reference Points
VSSQ
ODT Timing Reference Load
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
ODT Timing Definitions
Definitions for tAON, tAONPD, tAOF, tAOFPD, and tADC are provided in the following table and subsequent figures.
Symbol
Begin Point Definition
End Point Definition
tAON
Rising edge of CK - defined by the end point of ODTLon
Extrapolated point at VSSQ
tAONPD
Rising edge of CK - with ODT being first registered high
Extrapolated point at VSSQ
tAOF
Rising edge of CK - defined by the end point of ODTLoff
End point: Extrapolated point at VRTT_Nom
tAOFPD
Rising edge of CK - with ODT being first registered low
End point: Extrapolated point at VRTT_Nom
Rising edge of CK - defined by the end point of ODTLcnw,
End point: Extrapolated point at VRTT_Wr and
ODTLcwn4, or ODTLcwn8
VRTT_Nom respectively
tADC
Reference Settings for ODT Timing Measurements
DDR3
Parameter
RTT_Nom
DDR3L
RTT_Wr
VSW1[V]
VSW2[V]
VSW1[V]
VSW2[V]
RZQ/4
NA
0.05
0.10
0.05
0.10
RZQ/12
NA
0.10
0.20
0.10
0.20
RZQ/4
NA
0.05
0.10
0.05
0.10
RZQ/12
NA
0.10
0.20
0.10
0.20
RZQ/4
NA
0.05
0.10
0.05
0.10
RZQ/12
NA
0.10
0.20
0.10
0.20
RZQ/4
NA
0.05
0.10
0.05
0.10
RZQ/12
NA
0.10
0.20
0.10
0.20
RZQ/12
RZQ/2
0.20
0.30
0.20
0.25
tAON
tAONPD
tAOF
tAOFPD
tADC
Definition of tAON
Begin point: Rising edge of CK – CK#
Defined by the end point of ODTLon
CK
VTT
CK#
tAON
Tsw2
Tsw1
DQ, DM
DQS, DQS#
TDQS, TDQS#
Vsw2
Vsw1
VSSQ
End point: Extrapolated point at VSSQ
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Definition of tAONPD
Begin point: Rising edge of CK – CK#
with ODT being first register high
CK
VTT
CK#
tAONPD
Tsw2
Tsw1
DQ, DM
DQS, DQS#
TDQS, TDQS#
Vsw2
Vsw1
VSSQ
End point: Extrapolated point at VSSQ
Definition of tAOF
Begin point: Rising edge of CK – CK#
defined by the end point of ODTLoff
CK
VTT
CK#
tAOF
VRTT_Nom
End point: Extrapolated point at VRTT_Nom
Tsw2
DQ, DM
DQS, DQS#
TDQS, TDQS#
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Vsw2
Vsw1
VSSQ
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Definition of tAOFPD
Begin point: Rising edge of CK – CK#
with ODT being first registered low
CK
VTT
CK#
tAOFPD
VRTT_Nom
End point: Extrapolated point at VRTT_Nom
Tsw2
DQ, DM
DQS, DQS#
TDQS, TDQS#
Tsw1
Vsw2
Vsw1
VSSQ
Definition of tADC
Begin point: Rising edge of CK – CK#
defined by the end of ODTLcnw
CK
Begin point: Rising edge of CK – CK# defined
by the end of ODTLcwn4 or ODTLcwn8
CK
VTT
CK#
CK#
tADC
VRTT_Nom
tADC
End point: Extrapolated point at VRTT_Nom
Tsw22
Tsw21
DQ, DM
DQS, DQS#
TDQS, TDQS#
Tsw12
Tsw11
Vsw2
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VRTT_Wr
Vsw1
121
End point: Extrapolated point at VRTT_Wr
VSSQ
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Input/Output Capacitance
800
Parameter
1066
1333
1600
1866
2133
Symbol
Unit
Notes
2.1
pF
1,2,3
-
-
pF
1,2,3
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
1.4
3.0
1.4
2.7
1.4
2.5
1.4
2.3
1.4
2.2
1.4
1.4
2.5
1.4
2.5
1.4
2.3
1.4
2.2
1.4
2.1
CIO
Input/output capacitance
(DDR3)
(DQ, DM, DQS, ,
CIO
TDQS,T)
(DDR3L)
Input capacitance, CK and
CCK
0.8
1.6
0.8
1.6
0.8
1.4
0.8
1.4
0.8
1.3
0.8
1.3
pF
2,3
Input capacitance delta, CK and
CDCK
0
0.15
0
0.15
0
0.15
0
0.15
0
0.15
0
0.15
pF
2,3,4
CDDQS
0
0.15
0
0.15
0
0.15
0
0.15
0
0.15
0
0.15
pF
2,3,5
0.75
1.4
0.75
1.35
0.75
1.3
0.75
1.3
0.75
1.2
0.75
1.2
pF
2,3,6
0.75
1.3
0.75
1.3
0.75
1.3
0.75
1.2
0.75
1.2
-
-
pF
2,3,6
-0.5
0.3
-0.5
0.3
-0.4
0.2
-0.4
0.2
-0.4
0.2
-0.4
0.2
pF
2,3,7,8
-0.5
0.5
-0.5
0.5
-0.4
0.4
-0.4
0.4
-0.4
0.4
-0.4
0.4
pF
Input/output capacitance delta
DQS and
CI
Input capacitance,
(DDR3)
(CTRL, ADD,CMD input-only pins)
CI
(DDR3L)
Input capacitance delta,
CDI_CTRL
(All CTRL input-only pins
Input capacitance delta,
(All ADD/CMD input-only pins)
CDI_ADD_
2,3,9,
CMD
10
Input/output capacitance delta, DQ,
CDIO
-0.5
0.3
-0.5
0.3
-0.5
0.3
-0.5
0.3
-0.5
0.3
-0.5
0.3
pF
2,3,11
CZQ
-
3
-
3
-
3
-
3
-
3
-
3
pF
2,3,12
DM, DQS, , TDQS, T
Input/output capacitance of ZQ pin
NOTE 1. Although the DM, TDQS and T pins have different functions, the loading matches DQ and DQS
NOTE 2. This parameter is not subject to production test. It is verified by design and characterization. The capacitance is measured
according to JEP147(“PROCEDURE FOR MEASURING INPUT CAPACITANCE USING A VECTOR NETWORK ANALYZER(VNA)”)
with VDD, VDDQ, VSS, VSSQ applied and all other pins floating (except the pin under test, CKE, REET and ODT as necessary).
VDD=VDDQ=1.5V, VBIAS=VDD/2 and ondie termination off.
NOTE 3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here
NOTE 4. Absolute value of CCK-
NOTE 5. Absolute value of CIO(DQS)-CIO()
NOTE 6. CI applies to ODT, , CKE, A0-A14, BA0-BA2, RA, A, WE.
NOTE 7. CDI_CTRL applies to ODT, and CKE
NOTE 8. CDI_CTRL=CI(CTRL)-0.5*(CI(CLK)+CI(L))
NOTE 9. CDI_ADD_CMD applies to A0-A14, BA0-BA2, RA, A and WE
NOTE 10. CDI_ADD_CMD=CI(ADD_CMD) - 0.5*(CI(CLK)+CI(L))
NOTE 11. CDIO=CIO(DQ,DM) - 0.5*(CIO(DQS)+CIO())
NOTE 12. Maximum external load capacitance on ZQ pin: 5 pF.
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
DDR3L IDD Currents
Symbol
IDD0
IDD1
IDD2P0
IDD2P1
DDR3L-1600
(11-11-11)
Parameter/Condition
Operating Current 0
One Bank Activate-> Precharge
Operating Current 1
One Bank Activate-> Read-> Precharge
Precharge Power-Down Current
Slow Exit - MR0 bit A12 = 0
Precharge Power-Down Current
Fast Exit - MR0 bit A12 = 1
DDR3L-1866
(13-13-13)
Unit
X8
X16
X8
X16
62
67
67
72
mA
71
76
76
81
mA
11
12
11
12
mA
20
23
mA
IDD2Q
Precharge Quiet Standby Current
32
37
mA
IDD2N
Precharge Standby Current
32
37
mA
IDD2NT
Precharge Standby ODT Current
37
40
42
45
mA
IDD3P
Active Power-Down Current
Always Fast Exit
IDD3N
Active Standby Current
42
45
47
50
mA
IDD4R
Operating Current Burst Read
140
150
150
160
mA
IDD4W
Operating Current Burst Write
145
155
155
165
mA
IDD5B
Burst Refresh Current
IDD6TC 1
(RS -DIB)
IDD6 2
IDD6ET 3
32
Self-Refresh Current:
Room Temperature Range
Self-Refresh Current
Normal
Self-Refresh Current:
Extended
IDD7
All Bank Interleave Read Current
IDD8
Reset Low Current
37
mA
135
140
mA
3
3
mA
11
12
11
14
210
12
14
220
220
13
mA
230
13
mA
mA
mA
NOTE 1 IDD6TC (RS-DIB):TC ≤ Room Temperature; SRT is disabled, ASR is enabled. Value is maximum.
NOTE 2 IDD6: SRT is ‘Normal’, ASR is disabled. Value is maximum.
- Commercial Grade = 0℃~85℃
- Quasi Industrial Grade (-T) = -40℃~85℃
- Industrial Grade (-I) = -40℃~85℃
- Automotive Grade 2 (-H) = -40℃~85℃
- Automotive Grade 3 (-A) = -40℃~85℃
NOTE 3 IDD6ET: SRT is ‘Extended’, ASR is disabled. Value is maximum.
- Commercial Grade = 0℃~95℃
- Quasi Industrial Grade (-T) = -40℃~95℃
- Industrial Grade (-I) = -40℃~95℃
- Automotive Grade 2 (-H) = -40℃~105℃
- Automotive Grade 3 (-A) = -40℃~95℃
NOTE 4 IDD will be derated (increased) when above 95℃
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DDR3 IDD Currents
Symbol
Parameter/Condition
DDR3-1600
(11-11-11)
DDR3-1866
(13-13-13)
DDR3-2133
(14-14-14)
X8
X16
X8
X16
X8
X16
Unit
IDD0
Operating Current 0
One Bank Activate -> Precharge
65
70
70
75
75
80
mA
IDD1
Operating Current 1
One Bank Activate-> Read-> Precharge
75
80
80
85
85
90
mA
IDD2P0
Precharge Power-Down Current
Slow Exit - MR0 bit A12 = 0
12
15
12
15
12
16
mA
IDD2P1
Precharge Power-Down Current
Fast Exit - MR0 bit A12 = 1
22
25
28
mA
IDD2Q
Precharge Quiet Standby Current
35
40
45
mA
IDD2N
Precharge Standby Current
35
40
45
mA
IDD2NT
Precharge Standby ODT Current
40
43
45
48
50
53
mA
IDD3P
Active Power-Down Current
Always Fast Exit
IDD3N
Active Standby Current
45
55
50
53
55
58
mA
IDD4R
Operating Current Burst Read
145
155
150
160
165
175
mA
IDD4W
Operating Current Burst Write
150
160
160
170
170
180
mA
IDD5B
Burst Refresh Current
145
145
150
12
12
15
12
15
mA
IDD6 1
IDD6ET 2
Self-Refresh Current
Normal
Self-Refresh Current
Extended
IDD7
All Bank Interleave Read Current
IDD8
Reset Low Current
35
40
45
mA
155
mA
15
17
15
17
15
17
mA
230
240
240
250
250
260
mA
14
mA
NOTE 1 IDD6: SRT is ‘Normal’, ASR is disabled. Value is maximum.
- Commercial Grade = 0℃~85℃
- Quasi Industrial Grade (-T) = -40℃~85℃
- Industrial Grade (-I) = -40℃~85℃
- Automotive Grade 2 (-H) = -40℃~85℃
- Automotive Grade 3 (-A) = -40℃~85℃
NOTE 2 IDD6ET: SRT is ‘Extended’, ASR is disabled. Value is maximum.
- Commercial Grade = 0℃~95℃
- Quasi Industrial Grade (-T) = -40℃~95℃
- Industrial Grade (-I) = -40℃~95℃
- Automotive Grade 2 (-H) = -40℃~105℃
- Automotive Grade 3 (-A) = -40℃~95℃
NOTE 3 IDD will be derated (increased) when above 95℃
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
IDD Measurement Conditions
Symbol
Parameter/Condition
Operating One Bank Active-Precharge Current
CKE: High; External clock: On;
tCK, nRC, nRAS, CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1); AL: 0;
:High between ACT and PRE;
IDD0
Command, Address, Bank Address Inputs: partially toggling;
Data IO: MID-LEVEL;
DM:stable at 0;
Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,...;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0;
Operating One Bank Active-Read-Precharge Current
CKE: High; External clock: On;
tCK, nRC, nRAS, nRCD, CL: see see the table of Timings used for IDD and IDDQ;
BL: 8(1,7); AL:0;
IDD1
: High between ACT, RD and PRE;
Command, Address, Bank Address Inputs, Data IO: partially toggling;
Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,...;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0;
Precharge Standby Current
CKE: High; External clock: On;
tCK, CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1); AL: 0; : stable at 1;
Command, Address, Bank Address Inputs: partially toggling;
IDD2N
Data IO: MID-LEVEL;
DM:stable at 0;
Bank Activity: all banks closed;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0;
Precharge Power-Down Current Slow Exit
CKE: Low; External clock: On;
IDD2P(0) tCK, CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1); AL: 0;
: stable at 1;
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Command, Address, Bank Address Inputs: stable at 0;
Data IO: MID-LEVEL;
DM:stable at 0;
Bank Activity: all banks closed;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0;
Pecharge Power Down Mode: Slow Exit(3)
Precharge Power-Down Current Fast Exit
CKE: Low; External clock: On;
tCK, CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1); AL: 0;
: stable at 1;
Command, Address, Bank Address Inputs: stable at 0;
IDD2P(1)
Data IO: MID-LEVEL;
DM:stable at 0;
Bank Activity: all banks closed;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0;
Pecharge Power Down Mode: Fast Exit(3)
Precharge Quiet Standby Current
CKE: High; External clock: On;
tCK, CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1); AL: 0;
: stable at 1;
IDD2Q
Command, Address, Bank Address Inputs: stable at 0;
Data IO: MID-LEVEL;
DM:stable at 0;
Bank Activity: all banks closed;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0
Active Standby Current
CKE: High; External clock: On;
tCK, CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1); AL: 0;
IDD3N
: stable at 1;
Command, Address, Bank Address Inputs: partially toggling;
Data IO: MID-LEVEL;
DM:stable at 0;
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Bank Activity: all banks open;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0;
Active Power-Down Current
CKE: Low; External clock: On;
tCK, CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1); AL: 0;
: stable at 1;
IDD3P
Command, Address, Bank Address Inputs: stable at 0;
Data IO: MID-LEVEL;
DM:stable at 0;
Bank Activity: all banks open;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0
Operating Burst Read Current
CKE: High; External clock: On;
tCK, CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1,7); AL: 0;
: High between RD;
IDD4R
Command, Address, Bank Address Inputs: partially toggling;
Data IO: seamless read data burst with different data between one burst and the next one;
DM:stable at 0;
Bank Activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,...;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0;
Operating Burst Write Current
CKE: High; External clock: On;
tCK, CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1); AL: 0;
: High between WR;
IDD4W
Command, Address, Bank Address Inputs: partially toggling;
Data IO: seamless write data burst with different data between one burst and the next one ;
DM: stable at 0;
Bank Activity: all banks open, WR commands cycling through banks: 0,0,1,1,2,2,...;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at HIGH;
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Burst Refresh Current
CKE: High; External clock: On;
tCK, CL, nRFC: see the table of Timings used for IDD and IDDQ;
BL: 8(1); AL: 0;
: High between REF;
IDD5B
Command, Address, Bank Address Inputs: partially toggling;
Data IO: MID-LEVEL;
DM:stable at 0;
Bank Activity: REF command every nRFC;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0;
Self Refresh Current: Normal Temperature Range
TCASE: Normal Temperature Range;
Auto Self-Refresh (ASR): Disabled(4);
Self-Refresh Temperature Range (SRT):Normal(5);
CKE: Low; External clock: Off;
CK and : LOW; CL: see the table of Timings used for IDD and IDDQ;
IDD6
BL: 8(1);AL: 0;
, Command, Address, Bank Address, Data IO: MID-LEVEL;
DM:stable at 0;
Bank Activity:Self-Refresh operation;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: MID-LEVEL
Self-Refresh Current: Extended Temperature Range (6)
TCASE: Extended Temperature Range;
Auto Self-Refresh (ASR): Disabled(4);
Self-Refresh Temperature Range (SRT):Extended(5);
CKE: Low; External clock: Off; CK and : LOW; CL: see the table of Timings used for IDD and IDDQ;
IDD6ET
BL: 8(1);AL: 0;
, Command, Address, Bank Address, Data IO: MID-LEVEL;
DM:stable at 0;
Bank Activity:Extended Temperature Self-Refresh operation;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: MID-LEVEL
Auto Self-Refresh Current (6)
IDD6TC Auto Self-Refresh (ASR): Enabled(4);
Self-Refresh Temperature Range (SRT):Normal(5);
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
CKE: Low; External clock: Off; CK and : LOW; CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1);AL: 0;
, Command, Address, Bank Address, Data IO: MID-LEVEL;
DM:stable at 0;
Bank Activity:Auto Self-Refresh operation;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: MIDLEVEL
Operating Bank Interleave Read Current
CKE: High; External clock: On;
tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see the table of Timings used for IDD and IDDQ;
BL: 8(1,7); AL: CL-1;
: High between ACT and RDA;
Command, Address, Bank Address Inputs:partially toggling;
IDD7
Data IO: read data bursts with different data between one burst and the next one;
DM:stable at 0;
Bank Activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing;
Output Buffer and RTT: Enabled in Mode Registers(2);
ODT Signal: stable at 0;
RESET Low Current
RESET: LOW; External clock: Off;
CK and : LOW; CKE: FLOATING;
IDD8
, Command, Address,Bank Address, Data IO: FLOATING;
ODT Signal: FLOATING
RESET Low current reading is valid once power is stable and RESET has been LOW for at least 1ms.
NOTE 1. Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B
NOTE 2. Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B; RTT_Wr
enable: set MR2 A[10,9] = 10B
NOTE 3. Pecharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12=1B for Fast Exit
NOTE 4. Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature
NOTE 5. Self-Refresh Temperature Range (SRT): set MR2 A7=0B for normal or 1B for extended temperature range
NOTE 6. Refer to DRAM supplier data sheet and/or DIMM SPD to determine if optional features or requirements are supported by
DDR3 SDRAM device
NOTE 7. Read Burst Type: Nibble Sequential, set MR0 A[3] = 0B
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
IDD0 Measurement-Loop Pattern
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
IDD1 Measurement-Loop Pattern
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
IDD2N and IDD3N Measurement-Loop Pattern
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
IDD4R and IDDQ4R Measurement-Loop Pattern
IDD4W Measurement-Loop Pattern
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
IDD5B Measurement-Loop Pattern
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
IDD7 Measurement-Loop Pattern
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Fundamental AC Specifications – Operating Frequency
DDR3-2133
DDR3-2133
14-14-14
Speed Bins
Parameter
CWL5
CL6
CL7
CL8
tCK
Min
Max
2.5
3.3
CL9
CWL6
Reserved
ns
Reserved
ns
CWL5
Reserved
ns
CWL6
1.875
< 2.5
ns
CWL7
Reserved
ns
CWL8/9/10
Reserved
ns
CWL5
Reserved
ns
CWL6
1.875
< 2.5
ns
CWL7
Reserved
ns
CWL8/9/10
Reserved
ns
CWL7
ns
Reserved
1.5
< 1.875
ns
CWL8
Reserved
ns
CWL9/10
Reserved
ns
CWL5/6
Reserved
ns
CWL7
CL10
ns
CWL7/8/9/10
CWL5/6
(Avg)
Unit
1.5
< 1.875
ns
CWL8
Reserved
ns
CWL9
Reserved
ns
CWL10
Reserved
ns
CWL5/6/7
CWL8
ns
Reserved
1.25
< 1.5
ns
CL11
CL12
tCK
(Avg)
CL13
CWL9
Reserved
ns
CWL10
Reserved
ns
CWL5/6/7/8
Reserved
ns
CWL9
Reserved
ns
CWL10
Reserved
ns
CWL5/6/7/8
Reserved
ns
CWL9
1.07
< 1.25
ns
CWL10
Reserved
ns
CWL5/6/7/8/9
Reserved
ns
CL14
CWL10
0.938
< 1.07
ns
Supported CL
6,7,8,9,10,11,13,14
nCK
Supported CWL
5,6,7,8,9,10
nCK
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Fundamental AC Specifications – Operating Frequency
DDR3-1866 and DDR3L-1866
DDR3(L)-1866
Speed Bins
Parameter
CWL5
CL6
CL7
13-13-13
Unit
Min
Max
2.5
3.3
ns
CWL6
Reserved
ns
CWL7/8/9
Reserved
ns
CWL5
Reserved
ns
CWL6
1.875
ns
< 2.5
CWL7/8/9
Reserved
ns
CWL5
Reserved
ns
CWL6
1.875
ns
< 2.5
CL8
tCK
CWL7
Reserved
ns
CWL8/9
Reserved
ns
CWL5/6
Reserved
ns
CWL7
1.5
ns
< 1.875
CL9
(Avg)
CL10
CL11
CWL8
Reserved
ns
CWL9
Reserved
ns
CWL5/6
Reserved
ns
CWL7
1.5
ns
< 1.875
CWL8
Reserved
ns
CWL5/6/7
Reserved
ns
CWL8
1.25
ns
< 1.5
CWL9
Reserved
ns
CWL5/6/7/8
Reserved
ns
CL12
CWL9
< 1.25
ns
Reserved
ns
Reserved
CWL5/6/7/8
CL13
CWL9
1.07
ns
< 1.25
Supported CL
6,7,8,9,10,11,13
nCK
Supported CWL
5, 6, 7, 8, 9
nCK
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Fundamental AC Specifications – Operating Frequency
DDR3-1600 and DDR3L-1600
DDR3(L)-1600
Speed Bins
Parameter
CWL5
CL6
Unit
11-11-11
Min
Max
2.5
3.3
ns
CWL6
Reserved
ns
CWL7/8
Reserved
ns
CWL5
Reserved
ns
CWL6
1.875
< 2.5
ns
CL7
tCK
CWL7
Reserved
ns
CWL8
Reserved
ns
CWL5
Reserved
ns
CWL6
1.875
< 2.5
ns
CL8
(Avg)
CL9
CL10
CWL7
Reserved
ns
CWL8
Reserved
ns
CWL5/6
Reserved
ns
CWL7
1.5
VIH(ac)=VREF(dc)+175mV, VIL(ac)=VREF(dc)-175mV
CK, Differential Slew Rate
4.0 V/ns
CMD/ADD
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
2
88
50
88
50
88
50
96
58
104
66
112
74
120
84
128
100
1.5
59
34
59
34
59
34
67
42
75
50
83
58
91
68
99
84
1
0
0
0
0
0
0
8
8
16
16
24
24
32
34
40
50
0.9
-2
-4
-2
-4
-2
-4
6
4
14
12
22
20
30
30
38
46
Slew rate
0.8
-6
-10
-6
-10
-6
-10
2
-2
10
6
18
14
26
24
34
40
V/ns
0.7
-11
-16
-11
-16
-11
-16
-3
-8
5
0
13
8
21
18
29
34
0.6
-17
-26
-17
-26
-17
-26
-9
-18
-1
-10
7
-2
15
8
23
24
0.5
-35
-40
-35
-40
-35
-40
-27
-32
-19
-24
-11
-16
-2
-6
5
10
0.4
-62
-60
-62
-60
-62
-60
-54
-52
-46
-44
-38
-36
-30
-26
-22
-10
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Derating values DDR3-800/1066/1333/1600 tIS/tIH - AC/DC based AC150 Threshold
DDR3 Alternate AC150 Threshold -> VIH(ac)=VREF(dc)+150mV, VIL(ac)=VREF(dc)-150mV
CK, Differential Slew Rate
4.0 V/ns
CMD/ADD
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
2
75
50
75
50
75
50
83
58
91
66
99
74
107
84
115
100
1.5
50
34
50
34
50
34
58
42
66
50
74
58
82
68
90
84
1
0
0
0
0
0
0
8
8
16
16
24
24
32
34
40
50
0.9
0
-4
0
-4
0
-4
8
4
16
12
24
20
32
30
40
46
Slew rate
0.8
0
-10
0
-10
0
-10
8
-2
16
6
24
14
32
24
40
40
V/ns
0.7
0
-16
0
-16
0
-16
8
-8
16
0
24
8
32
18
40
34
0.6
-1
-26
-1
-26
-1
-26
7
-18
15
-10
23
-2
31
8
39
24
0.5
-10
-40
-10
-40
-10
-40
-2
-32
6
-24
14
-16
22
-6
30
10
0.4
-25
-60
-25
-60
-25
-60
-17
-52
-9
-44
-1
-36
7
-26
15
-10
Derating values DDR3-1866/2133 tIS/tIH - AC/DC based AC135 Threshold
DDR3 Alternate AC135 Threshold -> VIH(ac)=VREF(dc)+135mV, VIL(ac)=VREF(dc)-135mV
CK, Differential Slew Rate
4.0 V/ns
CMD/ADD
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
2
68
50
68
50
68
50
76
58
84
66
92
74
100
84
108
100
1.5
45
34
45
34
45
34
53
42
61
50
69
58
77
68
85
84
1
0
0
0
0
0
0
8
8
16
16
24
24
32
34
40
50
10
4
18
12
26
20
34
30
42
46
0.9
2
-4
2
-4
2
-4
Slew rate
0.8
3
-10
3
-10
3
-10
11
-2
19
6
27
14
35
24
43
40
V/ns
0.7
6
-16
6
-16
6
-16
14
-8
22
0
30
8
38
18
46
34
0.6
9
-26
9
-26
9
-26
17
-18
25
-10
33
-2
41
8
49
24
0.5
5
-40
5
-40
5
-40
13
-32
21
-24
29
-16
37
-6
45
10
0.4
-3
-60
-3
-60
-3
-60
6
-52
14
-44
22
-36
30
-26
38
-10
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Derating values DDR3-1866/2133 tIS/tIH - AC/DC based AC125 Threshold
DDR3 Alternate AC125 Threshold -> VIH(ac)=VREF(dc)+125mV, VIL(ac)=VREF(dc)-125mV
CK, Differential Slew Rate
4.0 V/ns
CMD/ADD
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
2
63
50
63
50
63
50
71
58
79
66
87
74
95
84
103
100
1.5
42
34
42
34
42
34
50
42
58
50
66
58
74
68
82
84
1
0
0
0
0
0
0
8
8
16
16
24
24
32
34
40
50
0.9
4
-4
4
-4
4
-4
12
4
20
12
28
20
36
30
44
46
Slew rate
0.8
6
-10
6
-10
6
-10
14
-2
22
6
30
14
38
24
46
40
V/ns
0.7
11
-16
11
-16
11
-16
19
-8
27
0
35
8
43
18
51
34
0.6
16
-26
16
-26
16
-26
24
-18
32
-10
40
-2
48
8
56
24
0.5
15
-40
15
-40
15
-40
23
-32
31
-24
39
-16
47
-6
55
10
0.4
13
-60
13
-60
13
-60
21
-52
29
-44
37
-36
45
-26
53
-10
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NT5CB(C)256M8IN / NT5CB(C)128M16IP
Required time tVAC above VIH(AC) {below VIL(AC)} for ADD/CMD transition
DDR3
Slew
Rate
800/1066/1333/1600
DDR3L
1866/2133
1066/1333/1600
1866
Unit
[V/ns]
175mV [ps]
150mV[ps]
135mV [ps]
125mV [ps]
160 mV [ps]
135 mV [ps]
135 mV [ps]
125 mV [ps]
> 2.0
75
175
168
173
200
213
200
205
ps
2.0
57
170
168
173
200
213
200
205
ps
1.5
50
167
145
152
173
190
178
184
ps
1.0
38
130
100
110
120
145
133
143
ps
0.9
34
113
85
96
102
130
118
129
ps
0.8
29
93
66
79
80
111
99
111
ps
0.7
22
66
42
56
51
87
75
89
ps
0.6
note
30
10
27
13
55
43
59
ps
0.5
note
note
note
note
Note
10
Note
18
ps
VIH(AC)=VREF(DC)+160mV, VIL(AC)=VREF(DC)-160mV
DQS, Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH
DQ
2
80
45
80
45
80
45
-
-
-
-
-
-
-
-
-
-
1.5
53
30
53
30
53
30
61
38
-
-
-
-
-
-
-
-
1
0
0
0
0
0
0
8
8
16
16
-
-
-
-
-
-
0.9
-
-
-1
-3
-1
-3
7
5
15
13
23
21
-
-
-
-
Slew rate
0.8
-
-
-
-
-3
-8
5
1
13
9
21
17
29
27
-
-
V/ns
0.7
-
-
-
-
-
-
3
-5
11
3
19
11
27
21
35
37
0.6
-
-
-
-
-
-
-
-
8
-4
16
4
24
14
32
30
0.5
-
-
-
-
-
-
-
-
-
-
4
-6
12
4
20
20
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-8
-11
0
5
NOTE1: Cell contents shaded in gray are defined as ‘not supported’.
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DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Derating values DDR3L-1066/1333/1600 tDS/tDH - AC/DC based AC135/ Threshold
DDR3L Alternate AC135 Threshold -> VIH(AC)=VREF(DC)+135mV, VIL(AC)=VREF(DC)-135mV
DQS, Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH
DQ
2
68
45
68
45
68
45
-
-
-
-
-
-
-
-
-
1.5
45
30
45
30
45
30
53
38
-
-
-
-
-
-
-
-
1
0
0
0
0
0
0
8
8
16
16
-
-
-
-
-
-
0.9
-
-
2
-3
2
-3
10
5
18
13
26
21
-
-
-
-
Slew rate
0.8
-
-
-
-
3
-8
11
1
19
9
27
17
35
27
-
-
V/ns
0.7
-
-
-
-
-
-
14
-5
22
3
30
11
38
21
46
37
0.6
-
-
-
-
-
-
-
-
25
-4
33
4
41
14
49
30
0.5
-
-
-
-
-
-
-
-
-
-
29
-6
37
4
45
20
0.4
-
-
-
-
-
-
-
-
-
-
-
-
30
-11
38
5
NOTE1: Cell contents shaded in gray are defined as ‘not supported’.
Derating values DDR3L- 1866 tDS/tDH - AC/DC based AC130 Threshold
DDR3L Alternate AC130 Threshold -> VIH(AC)=VREF(DC)+130mV, VIL(AC)=VREF(DC)-130mV
DQS, Differential Slew Rate
8.0 V/ns 7.0 V/ns 6.0 V/ns 5.0 V/ns
△tDS △tDH △tDS △tDH △tDS △tDH △tDS
DQ
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
4
33
23
33
23
33
23
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.5
28
19
28
19
28
19
28
19
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
22
15
22
15
22
15
22
15
22
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
-
-
13
9
13
9
13
9
13
9
13
9
-
-
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
0
0
0
0
0
0
0
0
0
0
-
-
-
-
-
-
-
-
-
-
Slew 1.5
rate
4.0 V/ns
-
-
-
-
-
-
-22
-15
-22
-15
-22
-15
-22
-15
-14
-7
-
-
-
-
-
-
-
-
1
-
-
-
-
-
-
-
-
-65
-45
-65
-45
-65
-45
-57
-37
-49
-29
-
-
-
-
-
-
-
-
0.9
-
-
-
-
-
-
-
-
-
-
-62
-48
-62
-48
-54
-40
-46
-32
-38
-24
-
-
V/ns 0.8
-
-
-
-
-
-
-
-
-
-
-
-
-61
-53
-53
-45
-45
-37
-37
-29
-29
-19
-
-
0.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-49
-50
-41
-42
-33
-34
-25
-24
-17
-8
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-37
-49
-29
-41
-21
-31
-13
-15
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-31
-51
-23
-41
-15
-25
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-28
-56
-20
-40
NOTE1: Cell contents shaded in gray are defined as ‘not supported’.
Version 1.9
02/2017
156
Nanya Technology Cooperation ©
All Rights Reserved.
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Derating values DDR3- 800/1066 tDS/tDH - AC/DC based AC175 Threshold
DDR3 AC175 Threshold
DQS, Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH
DQ
2
88
50
88
50
88
50
-
-
-
-
-
-
-
-
-
1.5
59
34
59
34
59
34
67
42
-
-
-
-
-
-
-
-
1
0
0
0
0
0
0
8
8
16
16
-
-
-
-
-
-
0.9
-
-
-2
-4
-2
-4
6
4
14
12
22
20
-
-
-
-
Slew rate
0.8
-
-
-
-
-6
-10
2
-2
10
6
18
14
26
24
-
-
V/ns
0.7
-
-
-
-
-
-
-3
-8
5
0
13
8
21
18
29
34
0.6
-
-
-
-
-
-
-
-
-1
-10
7
-2
15
8
23
24
0.5
-
-
-
-
-
-
-
-
-
-
-11
-16
-2
-6
5
10
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-30
-26
-22
-10
NOTE1: Cell contents shaded in gray are defined as ‘not supported’.
Derating values DDR3- 800/1066/1333/1600 tDS/tDH - AC/DC based AC150 Threshold
DDR3 AC150 Threshold
DQS, Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH
DQ
2
75
50
75
50
75
50
-
-
-
-
-
-
-
-
-
1.5
50
34
50
34
50
34
58
42
-
-
-
-
-
-
-
-
1
0
0
0
0
0
0
8
8
16
16
-
-
-
-
-
-
0.9
-
-
0
-4
0
-4
8
4
16
12
24
20
-
-
-
-
Slew rate
0.8
-
-
-
-
0
-10
8
-2
16
6
24
14
32
24
-
-
V/ns
0.7
-
-
-
-
-
-
8
-8
16
0
24
8
32
18
40
34
0.6
-
-
-
-
-
-
-
-
15
-10
23
-2
31
8
39
24
0.5
-
-
-
-
-
-
-
-
-
-
14
-16
22
-6
30
10
0.4
-
-
-
-
-
-
-
-
-
-
-
-
7
-26
15
-10
NOTE1: Cell contents shaded in gray are defined as ‘not supported’.
Version 1.9
02/2017
157
Nanya Technology Cooperation ©
All Rights Reserved.
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Derating values DDR3- 1866/2133 tDS/tDH - AC/DC based AC135 Threshold
DDR3
Alternate AC135 Threshold -> VIH(ac)=VREF(dc)+135mV, VIL(ac)=VREF(dc)-135mV
Alternate DC100 Threshold -> VIH(dc)=VREF(dc)+100mV, VIL(dc)=VREF(dc)-100mV
DQS, Differential Slew Rate
8.0 V/ns 7.0 V/ns 6.0 V/ns
5.0 V/ns
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH
4
34
25
34
25
34
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.5
29
21
29
21
29
21
29
21
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
23
17
23
17
23
17
23
17
23
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
-
-
14
10
14
10
14
10
14
10
14
10
-
-
-
-
-
-
-
-
-
-
-
-
DQ
2
-
-
-
-
0
0
0
0
0
0
0
0
0
0
-
-
-
-
-
-
-
-
-
-
Slew
1.5
-
-
-
-
-
-
-23
-17
-23
-17
-23
-17
-23
-17
-15
-9
-
-
-
-
-
-
-
-
1
-
-
-
-
-
-
-
-
-68
-50
-68
-50
-68
-50
-60
-42
-52
-34
-
-
-
-
-
-
0.9
-
-
-
-
-
-
-
-
-
-
-66
-54
-66
-54
-58
-46
-50
-38
-42
-30
-
-
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-64
-60
-56
-52
-48
-44
-40
-36
-32
-26
-
-
0.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-53
-59
-45
-51
-37
-43
-29
-33
-21
-17
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-43
-61
-35
-53
-27
-43
-19
-27
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-39
-66
-31
-56
-23
-40
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-38
-76
-30
-60
rate
V/ns
NOTE1: Cell contents shaded in gray are defined as ‘not supported’.
Derating values DDR3- 800/1066/1333/1600 tDS/tDH - AC/DC based AC135 Threshold
DDR3
Alternate AC135 Threshold -> VIH(ac)=VREF(dc)+135mV, VIL(ac)=VREF(dc)-135mV
Alternate DC100 Threshold -> VIH(dc)=VREF(dc)+100mV, VIL(dc)=VREF(dc)-100mV
DQS, Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH △tDS △tDH
2
68
50
68
50
68
50
-
-
-
-
-
-
-
-
-
-
1.5
45
34
45
34
45
34
53
42
-
-
-
-
-
-
-
-
1
0
0
0
0
0
0
8
8
16
16
-
-
-
-
-
-
0.9
-
-
2
-4
2
-4
10
4
18
12
26
20
-
-
-
-
Slew rate
0.8
-
-
-
-
3
-10
11
-2
19
6
27
14
35
24
-
-
V/ns
0.7
-
-
-
-
-
-
14
-8
22
0
30
8
38
18
46
34
0.6
-
-
-
-
-
-
-
-
25
-10
33
-2
41
8
49
24
0.5
-
-
-
-
-
-
-
-
-
-
29
-16
37
-6
45
10
0.4
-
-
-
-
-
-
-
-
-
-
-
-
30
-26
38
-10
DQ
NOTE1: Cell contents shaded in gray are defined as ‘not supported’.
Version 1.9
02/2017
158
Nanya Technology Cooperation ©
All Rights Reserved.
DDR3(L) 2Gb SDRAM
NT5CB(C)256M8IN / NT5CB(C)128M16IP
Required time tVAC above VIH(AC) {below VIL(AC)} for DQ transition
DDR3
Slew
800/1066/
800/1066/
1333/1600
1333/1600
175mV [ps]
150mV[ps]
> 2.0
75
2.0
Rate
800/1066
DDR3L
1066/1333
2133
1066
135mV [ps]
135mV [ps]
135 mV [ps]
160 mV [ps]
135 mV [ps]
130 mV [ps]
105
113
93
73
165
113
95
ps
57
105
113
93
73
165
113
95
ps
1.5
50
80
90
70
50
138
90
73
ps
1.0
38
30
45
25
5
85
45
30
ps
0.9
34
13
30
Note
Note
67
30
16
ps
0.8
29
Note
11
Note
Note
45
11
Note
ps
0.7
Note
Note
Note
-
-
16
Note
-
ps
0.6
Note
Note
Note
-
-
Note
Note
-
ps
0.5
Note
Note
Note
-
-
Note
Note
-
ps