AO3401-SOT23

AO3401 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1.0A < 120m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23 G A B C D E Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50 0 0.10 F 0.45 REF. 0.55 REF. S Millimeter G H K J L Min. 1.80 0.90 0.10 0.35 0.92 Max. 2.00 1.1 0.20 0.70 0.98 M 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limit ± Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 ID -4.2 IDM -30 Parameter Continuous Drain Current Pulsed Drain Current TA = 25oC Maximum Power Dissipation o TA = 75 C PD TJ, Tstg Operating Junction and Storage Temperature Range RθJA Junction-to-Ambient Thermal Resistance (PCB mounted) - 1- Unit V A 1.4 W 1 o -55 to 150 125 o C C/W 2012-7-8 AO3401 o ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Miax. Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA Drain-Source On-State Resistance RDS(on) VGS = -10V, ID = -4.2A 42.0 64.0 Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -4A 64.0 75.0 Drain-Source On-State Resistance RDS(on) VGS = -2.5V, ID =-1A 80.0 120.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA -1 -1.3 V Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 uA Gate Body Leakage IGSS VGS = ±12V, VDS = 0V ±100 nA gfs VDS = -5V, ID = -5A Forward Transconductance -30 -0.5 V 11 mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 15V, ID = - 4.0A VGS = -10V VDS =-15V, RL=3.7Ω VGS =-10V RGEN = 6Ω 9.4 nC 2 3 6.3 3.2 ns 38.2 12 VDS = -15V, VGS = 0V f = 1.0 MHz 954 pF 115 77 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 1.8A, VGS = 0V -2.2 A -1.0 V Note: Pulse test: pulse width