2N3906

2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors 2N3903 and 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 200 mA Power Dissipation Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C SEMTECH ELECTRONICS LTD. ® Dated : 11/08/2016 Rev:02 2N3905 / 2N3906 Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 30 60 40 80 50 100 30 60 15 30 150 300 - - -ICBO - 50 nA -IEBO - 50 nA -V(BR)CBO 40 - V -V(BR)CEO 40 - V -V(BR)EBO 6 - V Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA -VCE(sat) -VCE(sat) - 0.25 0.4 V Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA -VBE(sat) -VBE(sat) - 0.85 0.95 V fT 200 250 - MHz Cob - 4.5 pF td - 35 ns tr - 35 ns ts - 225 ns tf - 75 ns DC Current Gain at -VCE = 1 V, -IC = 0.1 mA at -VCE = 1 V, -IC = 1 mA at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 50 mA at -VCE = 1 V, -IC = 100 mA 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Gain Bandwidth Product at -VCE = 20 V, -IC = 10 mA, f = 100 MHz 2N3905 2N3906 Collector Base Capacitance at -VCB = 5 V, f = 100 KHz Delay Time at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA Rise Time at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA Storage Time at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA Fall Time at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA SEMTECH ELECTRONICS LTD. ® Dated : 11/08/2016 Rev:02 2N3905 / 2N3906 DC Current Gain 2 VCE=1V TJ=125 C 1 hFE (Normalized) 25 C -55 C 0.2 0.1 0.1 1 100 10 200 I C (mA) Collector Saturation Region 1 TJ=25 C 30mA 0.8 100mA I C=1mA VCE ( V ) 0.6 0.4 10mA 0.2 0 0.001 0.1 1 10 I B (mA) f = 100 KHz SEMTECH ELECTRONICS LTD. ® Dated : 11/08/2016 Rev:02