ME2323D

ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFET，ESD Protection GENERAL DESCRIPTION FEATURES The ME2323D(-G) is the P-Channel logic enhancement mode power ● RDS(ON) ≦50mΩ@VGS=-4.5V field effect transistors are produced using high cell density, DMOS ● RDS(ON) ≦65mΩ@VGS=-2.5V trench technology. This high density process is especially tailored to ● RDS(ON) ≦75mΩ@VGS=-1.8V minimize on-state resistance. These devices are particularly suited ● Super high density cell design for extremely low R DS(ON) for low voltage application such as cellular phone and notebook ● Exceptional on-resistance and maximum DC current computer power management and other battery powered circuits capability where high-side switching and low in-line power loss are needed in APPLICATIONS a very small outline surface mount package. ● Power Management in Note book ● Portable Equipment PIN ● Battery Powered System CONFIGURATION ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter (SOT-23) Top View The Ordering Information: ME2323D (Pb-free) ME2323D-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V TA=25℃ Continuous Drain TA=70℃ Pulsed Drain Current ID IDM TA=25℃ Maximum Power Dissipation TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* Apr, 2012-Ver1.6 PD -4.2 -3.3 -17 1.4 0.9 TJ -55 to 150 RθJA 90 A A W ℃ DCC 正式發行 ℃/W 01 ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFET，ESD Protection Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ Max BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -20 VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.25 Gate Leakage Current VDS=0V, VGS=±4.5V ±5 VDS=0V, VGS=±8V ±10 VDS=-16V, VGS=0V -1 Unit STATIC IGSS IDSS Zero Gate Voltage Drain Current RDS(ON) VSD Drain-Source On-Resistance a Diode Forward Voltage V -0.5 -1 VGS=-4.5V, ID= -4.0A 45 50 VGS=-2.5V, ID= -3.0A 52 65 VGS=-1.8V, ID= -2.0A 60 75 -0.78 -1 IS=-1.0A, VGS=0V V μA μA mΩ V DYNAMIC Qg Total Gate Charge 10.5 Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 30 td(on) Turn-On Delay Time 560 tr Turn-On Rise Time VDS=-10V, RL =2.5Ω 4000 td(off) Turn-Off Delay Time RGEN=3Ω, VGS=-4.5V 400 tf Turn-Off Fall Time VDS=-10V, VGS=-4.5V, ID=-4A 0.5 nC 3 VDS=-10V, VGS=0V, f=1MHz 220 95 pF ns 4000 Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Apr, 2012-Ver1.6 02 ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFET，ESD Protection Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Apr, 2012-Ver1.6 03 ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFET，ESD Protection Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Apr, 2012-Ver1.6 04 ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFET，ESD Protection SOT-23 Package Outline MILLIMETERS (mm) DIM MIN MAX A 2.800 3.00 B 1.200 1.70 C 0.900 1.30 D 0.350 0.50 G 1.780 2.04 H 0.010 0.15 J 0.085 0.20 K 0.300 0.65 L 0.890 1.02 S 2.100 3.00 V 0.450 0.60 DCC 正式發行 Apr, 2012-Ver1.6 05