ME2302

ME2302(Pb-free) N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field ● RDS(ON)≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦115mΩ@VGS=2.5V This high density process is especially tailored to minimize on-state ● RDS(ON)≦135mΩ@VGS=1.8V resistance. ● Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low voltage application such ● Exceptional on-resistance and maximum DC current as cellular phone, notebook computer power management and other capability battery powered circuits, and low in-line power loss that are needed APPLICATIONS in a very small outline surface mount package. ● Power Management in Notebook ● Portable Equipment ● Load Switch ORDER INFORMATION ● DSC Device Package ME2302 SOT-23 PIN CONFIGURATION PIN DESCRIPTION (SOT-23) Top View Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain TA=25℃ Current(tJ=150℃) TA=70℃ Pulsed Drain Current Maximum Body-Diode Continuous Current 2.8 ID 2.2 IDM 10 IS 1.6 TA=25℃ Maximum Power Dissipation TA=70℃ Operating Junction Temperature Maximum Junction-to-Ambient Thermal Resistance-Junction to Case A A 1.25 PD W 0.8 TJ ℃ 150 T≦10 sec 77 Steady State 105 RthJA RθJC 70 ℃/W ℃/W 2 *The device mounted on 1in FR4 board with 2 oz copper June, 2008-Ver2.0 Feb, 2007-Ver1.2 01 ME2302(Pb-free) N-Channel Enhancement Mode MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ Max 0.9 1.2 Unit STATIC PARAMETERS V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.6 IGSS Gate-Body Leakage Current VDS=0V, VGS=±8V ±100 VDS=20V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current RDS(ON) VSD On-State Drain Current a Drain-Source On-Resistance Diode Forward Voltage 10 VDS≧5V, VGS= 4.5V 6 VDS≧5V, VGS= 2.5V 4 A VGS=4.5V, ID= 2.8A 55 85 VGS=2.5V, ID= 2.5A 65 115 VGS=1.8V, ID= 2.2A 80 130 0.75 1.2 IS=1A, VGS=0V nA μA VDS=20V, VGS=0V TJ=55℃ ID(ON) V mΩ V DYNAMIC PARAMETERS Qg Total Gate Charge 9 Qgs Gate-Source Charge Qgd Gate-Drain Charge 3 Ciss Input Capacitance 350 Coss Output Capacitance Crss Reverse Transfer Capacitance 20 td(on) Turn-On Delay Time 9 tr Rise Time VDD=10V, RL =10Ω 23 td(off) Turn-Off Delay Time VGEN=4.5Ω, RG=6Ω 38 tf Fall Time VDS=10V, VGS=4.5V, ID=2.8A VDS=10V, VGS=0V, f=1MHZ 2.2 90 nC pF ns 3 Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% June, 2008-Ver2.0 Feb, 2007-Ver1.2 02 ME2302(Pb-free) N-Channel Enhancement Mode MOSFET Typical Characteristics (TJ =25℃ ℃ Noted) June, 2008-Ver2.0 Feb, 2007-Ver1.2 03 ME2302(Pb-free) N-Channel Enhancement Mode MOSFET Typical Characteristics (TJ =25℃ ℃ Noted) June, 2008-Ver2.0 Feb, 2007-Ver1.2 04 ME2302(Pb-free) N-Channel Enhancement Mode MOSFET SOT-23 Package Outline MILLIMETERS DIM June, 2008-Ver2.0 Feb, 2007-Ver1.2 MIN MAX A 2.80 3.1 B 1.20 1.7 C 0.89 1.3 D 0.37 0.50 G 1.78 2.04 H 0.013 0.15 J 0.085 0.2 K 0.45 0.7 L 0.89 1.02 S 2.10 3 V 0.45 0.60 05