MMBTA92

MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Parameter O Value Unit V -VEBO 300 200 300 200 5 V Collector Current -IC 500 mA Total Power Dissipation Ptot 350 mW Tj 150 O Tstg - 55 to + 150 O Collector Base Voltage Collector Emitter Voltage Symbol MMBTA92 MMBTA93 MMBTA92 MMBTA93 -VCBO -VCEO Emitter Base Voltage Junction Temperature Storage Temperature Range V C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE 25 80 25 200 - - -ICBO -ICBO - 0.25 0.25 µA -IEBO - 0.1 µA MMBTA92 MMBTA93 -V(BR)CBO -V(BR)CBO 300 200 - V MMBTA92 MMBTA93 -V(BR)CEO -V(BR)CEO 300 200 - V Emitter Base Breakdown Voltage at -IE = 100 µA -V(BR)EBO 5 - V Collector Emitter Saturation Voltage at -IC = 20 mA, -IB = 2 mA -VCE(sat) - 0.5 V Base Emitter Saturation Voltage at -IC = 20 mA, -IB = 2 mA -VBE(sat) - 0.9 V fT 50 - MHz Ccb - 6 8 pF DC Current Gain at -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA at -VCE = 10 V, -IC = 30 mA Collector Base Cutoff Current at -VCB = 200 V at -VCB = 160 V Emitter Base Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Current Gain Bandwidth Product at -VCE = 20 V, -IC = 10 mA, f = 100 MHz Collector Base Capacitance at -VCB = 20 V, f = 1 MHz MMBTA92 MMBTA93 MMBTA92 MMBTA93 SEMTECH ELECTRONICS LTD. ® Dated :16/03/2015 Rev:01 MMBTA92 / MMBTA93 SEMTECH ELECTRONICS LTD. ® Dated :16/03/2015 Rev:01