PMV65XPEA

PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot = 890 mW ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified 3. Applications • • • • Relay driver High speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current - - -3.3 A - 67 78 mΩ VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa259 6. Ordering information Table 3. Ordering information Type number PMV65XPEA Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] PMV65XPEA DN% [1] PMV65XPEA Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 2 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.3 A VGS = -4.5 V; Tamb = 25 °C [1] - -2.8 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.8 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -12 A EDS(AL)S non-repetitive drain-source avalanche energy Tj(init) = 25 °C; ID = -0.52 A; DUT in - 5.4 mJ total power dissipation Tamb = 25 °C [2] - 480 mW [1] - 890 mW - 6250 mW Ptot avalanche (unclamped) Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - -0.9 A HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage PMV65XPEA Product data sheet [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] [3] drain 6 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Measured between all pins. 2 All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 3 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 175 Normalized continuous drain current as a function of junction temperature aaa-012866 -102 ID (A) Tj (°C) Limit RDSon = VDS/ID tp = 10 µs -10 tp = 100 µs tp = 1 ms -1 tp = 10 ms -10-1 DC; Tsp = 25 °C tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMV65XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 4 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 230 260 K/W [2] - 120 140 K/W [2] - 85 100 K/W - 15 20 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-011994 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . duty cycle = 1 102 0.50 0.25 0.10 10 0.75 0.33 0.20 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV65XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 5 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET aaa-011995 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.50 0.75 0.25 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV65XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 6 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.25 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -2 µA VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 67 78 mΩ VGS = -4.5 V; ID = -2.8 A; Tj = 150 °C - 98 114 mΩ VGS = -2.5 V; ID = -2.2 A; Tj = 25 °C - 99 125 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = -10 V; ID = -2 A; Tj = 25 °C - 7.4 - S RG gate resistance f = 1 MHz - 11.6 - Ω Dynamic characteristics QG(tot) total gate charge VDS = -10 V; ID = -2.8 A; VGS = -4.5 V; - 5 9 nC QGS gate-source charge Tj = 25 °C - 1.1 - nC QGD gate-drain charge - 1.1 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 618 - pF Coss output capacitance Tj = 25 °C - 80 - pF Crss reverse transfer capacitance - 58 - pF td(on) turn-on delay time VDS = -10 V; ID = -2.8 A; VGS = -4.5 V; - 7 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 19 - ns td(off) turn-off delay time - 36 - ns tf fall time - 17 - ns - -0.75 -1.2 V Source-drain diode VSD source-drain voltage PMV65XPEA Product data sheet IS = -0.85 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 7 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET aaa-003872 -12 -3.5 V -4.5 V -8.0 V ID (A) -3.0 V 017aaa129 - 10- 3 VGS = -2.8 V ID (A) -2.5 V - 10- 4 -8 (1) (2) (3) -2.2 V - 10- 5 -4 -1.8 V 0 Fig. 6. 0 -1 -2 -3 VDS (V) - 10- 6 0.0 -4 - 0.5 - 1.0 Tj = 25 °C Tj = 25 °C; VDS = -3 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. aaa-003873 300 RDSon (mΩ) -1.8 V VGS = -2.2 V VGS (V) - 1.5 Sub-threshold drain current as a function of gate-source voltage aaa-012875 0.3 RDSon (Ω) -2.5 V 200 0.2 -2.8 V Tj = 150 °C -3.0 V 100 -3.5 V 0.1 -4.5 V -8.0 V 0 0 -4 -8 ID (A) Tj = 25 °C 0 -12 Tj = 25 °C Fig. 8. Product data sheet -1 -2 -3 -4 VGS (V) -5 ID = -2.8 A Drain-source on-state resistance as a function of drain current; typical values PMV65XPEA 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 8 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET aaa-003875 -12 aaa-012877 2.0 a ID (A) 1.5 -8 1.0 -4 0.5 Tj = 150 °C 0 0 Tj = 25 °C -1 -2 VGS (V) 0 -60 -3 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-003877 -1.5 VGS(th) (V) 0 60 120 aaa-012878 Ciss C (pF) 102 -1.0 Coss typ 0.0 -60 Crss min -0.5 0 60 10 120 Tj (°C) 1 -10-1 180 ID = -0.25 mA; VDS = VGS Product data sheet -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMV65XPEA 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 103 max Tj (°C) Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 9 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET aaa-012879 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 2 4 QG (nC) Fig. 15. MOSFET transistor: Gate charge waveform definitions 6 ID = -2.8 A; VDS = -10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-003880 -5 IS (A) -4 -3 -2 -1 0 Tj = 150 °C 0 -0.2 -0.4 Tj = 25 °C -0.6 -0.8 -1.0 VDS (V) VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values PMV65XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 10 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig. 18. Package outline TO-236AB (SOT23) PMV65XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 11 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) PMV65XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 12 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV65XPEA v.1 20141127 Product data sheet - - PMV65XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 13 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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PMV65XPEA Product data sheet Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 14 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PMV65XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 15 / 16 PMV65XPEA Nexperia 20 V, P-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 7 11 11.1 Test information ................................................... 11 Quality information ............................................. 11 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 27 November 2014 PMV65XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2014 © Nexperia B.V. 2017. All rights reserved 16 / 16