SE8205A

SE8205 Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single MOSFET VDSS = 20 V RDS(ON)=21mΩ@VGS=4.5 Applications ●Battery protection ●Load switch ●Power management Construction ●Silicon epitaxial planer Absolute Maximum Ratings Paramet er Symbol Rating Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous ID 6 Pulsed IDM 25 Maximum Power Dissipation PD 1.5 Operating Junction Temperature Range TJ Drain Current (Note 1) Storage Temperature Range ShenZhen Sino-IC Semiconductor Co., Ltd. TSTG -55 to 150 A W °C 1 SE8205 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max OFF CHARACTERISTICS B VDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0 V 1 μA IGSS Gate-Body leakage VDS=0V, VGS=±12 V ±80 nA V mΩ B 20 Unit s V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=VGS ID=250μA 0.45 0.6 1.2 - 21 24.5 VGS=4.0V, ID=6.8A 3 VDS=5V, ID=5A DYNAMIC PARAMETERS VGS=0V,VDS=8V, f=1.0MHz SWITCHING PARAMETERS VGS=4.5V Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On DelayTime VGEN=4.0V td(off) Turn-Off DelayTime VDD=10V ID=1A td(r) td(f) VDS=10V S 600 pF 330 pF 140 pF 10 15 2.3 ID=6A nC 3 10 20 35 70 Turn-On Rise Time 11 25 Turn-Off Fall Time 30 60 ShenZhen Sino-IC Semiconductor Co., Ltd. RGEN=10Ω ns 2 SE8205 Typical Characteristics ShenZhen Sino-IC Semiconductor Co., Ltd. 3 SE8205 ShenZhen Sino-IC Semiconductor Co., Ltd. 4 SE8205 ShenZhen Sino-IC Semiconductor Co., Ltd. 5 SE8205 ShenZhen Sino-IC Semiconductor Co., Ltd. ShenZhen Sino-IC Semiconductor Co., Ltd. 6