BLS2731-110,114

BLS2731-110 Microwave power transistor Rev. 6 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification Microwave power transistor BLS2731-110 FEATURES PINNING - SOT423A • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability DESCRIPTION 1 collector 2 emitter 3 base; connected to flange • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. 1 dbook, halfpage APPLICATIONS • Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band. 3 3 2 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the common base connected to the flange. MBK052 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERATION Pulsed class-C f (GHz) VCB (V) PL (W) Gp (dB) ηC (%) 2.7 to 3.1 40 >110 >7 >35 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2001 Dec 05 2 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 V VCES collector-emitter voltage RBE = 0 − 75 V VEBO emitter-base voltage open collector − 2 V ICM peak collector current tp ≤ 100 µs; δ ≤ 10% − 12 A Ptot total power dissipation tp = 100 µs; δ = 10%; Tmb = 25 °C − 500 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C up to 0.2 mm from ceramic cap; t ≤ 10 s THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal impedance from junction to heatsink Zth j-h VALUE tp = 100 µs; δ = 10%; note 1 0.24 UNIT K/W Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. − UNIT V(BR)CBO collector-base breakdown voltage IC = 30 mA; open emitter 75 V V(BR)CES collector-emitter breakdown voltage IC = 30 mA; VBE = 0 75 − V ICBO collector leakage current VCB = 40 V; IE = 0 − 3 mA ICES collector leakage current VCE = 40 V; VBE = 0 − 6 mA IEBO emitter leakage current VEB = 1.5 V; IC = 0 − 0.6 mA hFE DC current gain VCE = 5 V; IC = 3 A 40 100 APPLICATION INFORMATION RF performance at Th = 25 °C in a common base test circuit. MODE OF OPERATION Class-C; tp = 100 µs; δ = 10% 2001 Dec 05 f (GHz) VCE (V) PL (W) GP (dB) ηC (%) 2.7 to 3.1 40 ≥110 ≥7 ≥35 2.7 to 2.9 40 typ. 130 typ. 8 typ. 42 2.9 to 3.1 40 typ. 120 typ. 7.5 typ. 40 3 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 MBK284 10 handbook, halfpage Gp (dB) 8 ηC 50 ηC MBK285 140 PL halfpage handbook, 2.7 (W) 120 (%) 3.1 2.9 GHz 40 Gp 100 6 30 4 20 80 60 40 10 2 20 0 2.7 2.8 2.9 3 f (GHz) 0 3.1 0 10 12 14 VCE = 40 V; class-C; tp = 100 µs; δ = 10%. VCE = 40 V; class-C; tp = 100 µs; δ = 10%. Fig.2 Fig.3 Power gain and efficiency as functions of frequency; typical values. MGM538 18 16 20 Load power as a function of drive power; typical values. MGM539 8 12 PD (W) handbook, halfpage handbook, halfpage ZL (Ω) xi Zi RL (Ω) 4 8 0 ri 4 −4 0 2.6 2.8 3 f (GHz) XL −8 2.6 3.2 2.8 VCB = 40 V; class-C; PL = 110 W. VCB = 40 V; class-C; PL = 110 W. Fig.4 Fig.5 Input impedance as function of frequency (series components); typical values. 2001 Dec 05 4 3 f (GHz) 3.2 Load impedance as function of frequency (series components); typical values. Philips Semiconductors Product specification Microwave power transistor BLS2731-110 30 handbook, full pagewidth 30 40 L8 L11 L2 RC C2 L6 L7 L1 L4 L10 L9 L3 C1 input output L13 L14 L5 L12 MGM540 Dimensions in mm. The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit. 2001 Dec 05 5 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 List of components (see Fig.6) COMPONENT DESCRIPTION VALUE DIMENSIONS C1 multilayer ceramic chip capacitor; note 1 12 pF C2 multilayer ceramic chip capacitor; note 1 18 pF RC multilayer ceramic chip capacitor in series with SMD resistor 100 nF + 5 Ω L1 stripline; note 2 length 4.5 mm width 10 mm L2 stripline; note 2 length 2.5 mm width 16.4 mm L3 stripline; note 2 length 8.3 mm width 1 mm L4 stripline; note 2 length 8 mm width 1.5 mm L5 stripline; note 2 length 2 mm width 8.9 mm L6 stripline; note 2 length 12.7 mm width 1.2 mm L7 stripline; note 2 length 4.5 mm width 10 mm L8 stripline; note 2 length 2.5 mm width 24.4 mm L9 stripline; note 2 length 4.4 mm width 1 mm L10 stripline; note 2 length 5.2 mm width 1 mm L11 stripline; note 2 length 9.3 mm width 1 mm L12 stripline; note 2 length 2.5 mm width 6 mm L13 stripline; note 2 length 7.8 mm width 1.2 mm L14 stripline; note 2 length 7.5 mm width 1.2 mm Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on double-clad printed-circuit board with Duroid dielectric (εr = 2.2); thickness = 0.38 mm. 2001 Dec 05 6 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT423A D A F 3 D1 U1 B q C c 1 H p U2 E1 E w1 M A M B M A 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 5.72 4.90 9.53 9.27 0.10 0.05 12.09 11.71 12.83 12.57 8.84 8.56 10.29 10.03 1.58 1.47 19.81 18.29 3.43 3.18 3.35 2.95 16.51 22.99 22.73 9.91 9.65 0.25 0.76 inches 0.225 0.193 0.375 0.365 0.004 0.002 0.476 0.461 0.505 0.495 0.348 0.337 0.405 0.395 0.062 0.058 0.78 0.72 0.135 0.125 0.132 0.116 0.65 0.905 0.895 0.390 0.380 0.01 0.03 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-03-29 SOT423A 2001 Dec 05 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2001 Dec 05 8 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 NOTES 2001 Dec 05 9 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 NOTES 2001 Dec 05 10 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 NOTES 2001 Dec 05 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/05/pp12 Date of release: 2001 Dec 05 Document order number: 9397 750 09083