BT155K-1200TQ

BT155K-1200T SCR 20 December 2016 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a SOT1259 (3-lead TO-3P) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 2. Features and benefits • • • • High thermal cycling performance Planar passivated for voltage ruggedness and reliability High voltage capacity Very high current surge capability 3. Applications • • • • • • • • • Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Uninterruptible Power Supply (UPS) Solid State Relay (SSR) Traction battery charging 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 1200 V VRRM repetitive peak reverse voltage - - 1200 V ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 state current - - 650 A half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - - 715 A - - 150 °C Tj junction temperature IT(AV) average on-state current half sine wave; Tmb ≤ 131 °C - - 50 A IT(RMS) RMS on-state current half sine wave; Tmb ≤ 131 °C; Fig. 1; Fig. 2; Fig. 3 - - 79 A BT155K-1200T WeEn Semiconductors SCR Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7; Fig. 8 - - 50 mA VDM = 800 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform 1500 - - V/µs Static characteristics IGT gate trigger current Dynamic characteristics dVD/dt rate of rise of off-state voltage 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline Graphic symbol cathod A K G 2 A anode 3 G gate mb mb mounting base; connected to anode sym037 1 2 3 TO3P (SOT1259) 6. Ordering information Table 3. Ordering information Type number BT155K-1200T Package Name Description Version TO3P Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO3P SOT1259 7. Marking Table 4. Marking codes Type number Marking code BT155K-1200T BT155K-1200T BT155K-1200T Product data sheet All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 2 / 13 BT155K-1200T WeEn Semiconductors SCR 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM Min Max Unit repetitive peak off-state voltage - 1200 V VRRM repetitive peak reverse voltage - 1200 V IT(AV) average on-state current half sine wave; Tmb ≤ 131 °C - 50 A IT(RMS) RMS on-state current half sine wave; Tmb ≤ 131 °C; Fig. 1; Fig. 2; Fig. 3 - 79 A ITSM non-repetitive peak onstate current half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 - 650 A half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - 715 A 2 Conditions 2 I t I t for fusing tp = 10 ms; sine-wave pulse - 2113 A²s dIT/dt rate of rise of on-state current IG = 200 mA - 150 A/µs IGM peak gate current - 8 A VRGM peak reverse gate voltage - 5 V PGM peak gate power - 20 W PG(AV) average gate power - 1 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C over any 20 ms period aaa003-001 100 IT(RMS) (A) 131°C aab693-002 100 IT(RMS) (A) 80 90 60 80 40 70 20 0 -50 0 50 100 Tmb (°C) Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values BT155K-1200T Product data sheet 60 10-2 150 10-1 1 10 surge duration (s) f = 50 Hz; Tmb = 131 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 3 / 13 BT155K-1200T WeEn Semiconductors SCR Ptot (W) aaa003-003 80 a = 1.57 60 Tmb(max) (°C) 1.9 2.2 130 135 2.8 4 40 30 60 90 120 180 20 0 140 conduction form angle factor (degrees) α 0 10 20 30 4 2.8 2.2 1.9 1.57 40 145 α 50 150 60 IT(AV) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of average on-state current; maximum values aaa003-004 800 ITSM (A) IT ITSM t 600 tp Tj(init) = 25 °C max 400 200 0 1 102 10 number of cycles (n) 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT155K-1200T Product data sheet All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 4 / 13 BT155K-1200T WeEn Semiconductors SCR aaa003-005 104 ITSM (A) IT ITSM t tp Tj(init) = 25 °C max 103 102 10-5 (1) 10-4 10-3 tp (s) 10-2 tp ≤ 10 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT155K-1200T Product data sheet All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 5 / 13 BT155K-1200T WeEn Semiconductors SCR 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle; Fig. 6 - - 0.25 K/W Rth(j-a) thermal resistance from junction to ambient free air in free air - 50 - K/W aaa003-006 1 Zth(j-mb) (K/W) 10-1 10-2 P δ= 10-3 tp 10-4 10-6 10-5 10-4 10-3 10-2 10-1 tp T t T 1 tp (s) 10 Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration BT155K-1200T Product data sheet All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 6 / 13 BT155K-1200T WeEn Semiconductors SCR 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7; Fig. 8 - - 50 mA IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 9 - - 300 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 10 - - 200 mA VT on-state voltage IT = 50 A; Tj = 25 °C; Fig. 11 - - 1.3 V IT = 90 A; Tj = 25 °C; Fig. 11 - - 1.5 V VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 12 - 0.7 1 V VD = 800 V; IT = 0.1 A; Tj = 125 °C; Fig. 12 0.25 0.4 - V VGT gate trigger voltage ID off-state current VD = 1200 V; Tj = 125 °C - - 3 mA IR reverse current VR = 1200 V; Tj = 125 °C - - 3 mA VDM = 800 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform 1500 - - V/µs VDM = 800 V; Tj = 150 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform 1000 - - V/µs Dynamic characteristics dVD/dt rate of rise of off-state voltage tgt gate-controlled turn-on ITM = 40 A; VD = 800 V; IG = 0.1 A; dIG/ time dt = 5 A/µs; Tj = 25 °C - 2 - µs tq commutated turn-off time - 150 - µs BT155K-1200T Product data sheet VDM = 804 V; Tj = 125 °C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/ dt = 50 V/µs; RGK(ext) = 100 kΩ; (VDM = 67% of VDRM) All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 7 / 13 BT155K-1200T WeEn Semiconductors SCR aaa003-007 3 aaa003-013 10 a: Tj = 150°C b: Tj = 125°C c: Tj = 25°C d: Tj = -40°C IGT IGT(25°C) VG (V) 2 1 a b c d (1) 1 0 -50 (1): (2): (3): (4): 0 50 100 Tj (°C) 150 Fig. 7. Normalized gate trigger current as a function of junction temperature 0.1 0.001 IL IH IH(25°C) 2 2 1 1 0 50 100 Tj (°C) BT155K-1200T Product data sheet 0 -50 150 Fig. 9. Normalized latching current as a function of junction temperature 1 IG (A) (4) PGM = 10W, tp = 5ms PGM = 20W, tp = 2.5ms PGM = 50W, tp = 1ms PGM = 100W, tp = 500us 10 100 1000 aaa003-009 3 IL(25°C) 0 -50 0.1 (3) Fig. 8. Gate voltage as a function of gate current aaa003-008 3 0.01 (2) 0 50 100 Tj (°C) 150 Fig. 10. Normalized holding current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 8 / 13 BT155K-1200T WeEn Semiconductors SCR aab693-010 100 IT (A) aaa003-011 1.6 VGT VGT(25°C) 80 1.2 60 (1) (2) (3) 40 0.8 20 0 0 0.5 1 1.5 0.4 -50 2 VT (V) Vo = 0.989 V; Rs = 0.0042 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values 0 50 100 Tj (°C) 150 Fig. 12. Normalized gate trigger voltage as a function of junction temperature Fig. 11. On-state current as a function of on-state voltage BT155K-1200T Product data sheet All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 9 / 13 BT155K-1200T WeEn Semiconductors SCR 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO3P SOT1259 D D1 A c1 D2 H Ø2 Ø1 E3 E E2 E1 L1 b2 b1 1 2 L2 3 b A1 e c 0 5 Dimensions (mm are the original dimensions) Unit max nom min mm 10 mm scale A A1 b b1 b2 c c1 D D1 D2 5.0 1.6 1.2 3.2 2.2 0.75 1.65 15.8 13.8 9.8 4.6 1.2 0.8 2.8 1.8 0.55 1.45 15.4 13.4 9.4 e E E1 E2 E3 H 20.1 14.1 18.9 17.06 5.2 5.45 (typ) 19.7 13.7 18.5 16.46 4.8 L1 L2 Ø1 Ø2 3.7 20.3 3.5 3.3 3.3 19.7 3.3 3.1 sot1259_po Outline version SOT1259 References IEC JEDEC JEITA European projection Issue date 14-10-21 14-10-22 TO3P Fig. 13. Package outline TO3P (SOT1259) BT155K-1200T Product data sheet All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 10 / 13 BT155K-1200T WeEn Semiconductors SCR Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 12. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors. In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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BT155K-1200T Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 11 / 13 BT155K-1200T WeEn Semiconductors SCR Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BT155K-1200T Product data sheet All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 12 / 13 BT155K-1200T WeEn Semiconductors SCR 13. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 6 10. Characteristics............................................................ 7 11. Package outline........................................................ 10 12. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 20 December 2016 BT155K-1200T Product data sheet All information provided in this document is subject to legal disclaimers. 20 December 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 13 / 13