BT151S-650R,118

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors BT151S series L and R Thyristors Rev. 05 — 9 October 2006 Product data sheet 1. Product profile 1.1 General description Passivated thyristors in a SOT428 plastic package. 1.2 Features n High thermal cycling performance n High bidirectional blocking voltage capability n Surface-mounted package 1.3 Applications n Motor control n Ignition circuits n Static switching n Protection circuits 1.4 Quick reference data n n n n n n VDRM ≤ 500 V (BT151S-500L/R) VRRM ≤ 500 V (BT151S-500L/R) VDRM ≤ 650 V (BT151S-650L/R) VRRM ≤ 650 V (BT151S-650L/R) VDRM ≤ 800 V (BT151S-800R) VRRM ≤ 800 V (BT151S-800R) ITSM ≤ 120 A (t = 10 ms) IT(RMS) ≤ 12 A IT(AV) ≤ 7.5 A IGT ≤ 5 mA (BT151S series L) IGT ≤ 15 mA (BT151S series R) n n n n n 2. Pinning information Table 1. Pinning Pin Description 1 cathode (K) 2 anode (A) 3 gate (G) mb mounting base; connected to anode Simplified outline Symbol mb A K G sym037 2 1 3 SOT428 (DPAK) BT151S series L and R NXP Semiconductors Thyristors 3. Ordering information Table 2. Ordering information Type number Package BT151S-500L Name Description Version DPAK plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428 BT151S-500R BT151S-650L BT151S-650R BT151S-800R 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage BT151S-500L; BT151S-500R [1] - 500 V BT151S-650L; BT151S-650R [1] - 650 V BT151S-800R VRRM repetitive peak reverse voltage - 800 V BT151S-500L; BT151S-500R [1] - 500 V BT151S-650L; BT151S-650R [1] - 650 V BT151S-800R - 800 V IT(AV) average on-state current half sine wave; Tmb ≤ 103 °C; see Figure 1 - 7.5 A IT(RMS) RMS on-state current all conduction angles; see Figure 4 and 5 - 12 A ITSM non-repetitive peak on-state current half sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 10 ms - 120 A t = 8.3 ms - 132 A t = 10 ms - 72 A2s ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs - 50 A/µs I2t I2t dIT/dt rate of rise of on-state current IGM peak gate current - 2 A VRGM peak reverse gate voltage - 5 V PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C [1] for fusing over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/µs. BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 2 of 13 BT151S series L and R NXP Semiconductors Thyristors 001aab019 15 a= 1.57 Ptot (W) 98 Tmb(max) (°C) 1.9 2.2 10 107 2.8 4 5 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 116 α 0 125 0 2 4 6 8 IT(AV) (A) Form factor a = IT(RMS)/IT(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values 001aaa957 160 ITSM (A) IT ITSM 120 t tp Tj initial = 25 °C max 80 40 0 1 102 10 n 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 3 of 13 BT151S series L and R NXP Semiconductors Thyristors 001aaa956 103 ITSM (A) dlT/dt limit 102 IT ITSM t tp Tj initial = 25 °C max 10 10−5 10−4 10−3 10−2 tp (s) tp ≤ 10 ms Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 001aaa954 25 IT(RMS) (A) 20 001aaa998 16 IT(RMS) (A) 12 15 8 10 4 5 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 150 Tmb (°C) f = 50 Hz; Tmb ≤ 103 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of mounting base temperature; maximum values BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 4 of 13 BT151S series L and R NXP Semiconductors Thyristors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 6 - - 1.8 K/W Rth(j-a) thermal resistance from junction to ambient mounted on an FR4 printed-circuit board; see Figure 14 - 75 - K/W 001aaa963 10 Zth(j-mb) (K/W) 1 10−1 δ= P tp T 10−2 t tp T 10−3 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 5 of 13 BT151S series L and R NXP Semiconductors Thyristors 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit BT151S-500L - 2 5 mA BT151S-500R - 2 15 mA BT151S-650L - 2 5 mA BT151S-650R - 2 15 mA BT151S-800R - 2 15 mA Static characteristics IGT gate trigger current VD = 12 V; IT = 100 mA; see Figure 8 IL latching current VD = 12 V; IGT = 100 mA; see Figure 10 - 10 40 mA IH holding current VD = 12 V; IGT = 100 mA; see Figure 11 - 7 20 mA VT on-state voltage IT = 23 A; see Figure 9 - 1.4 1.75 V VGT gate trigger voltage IT = 100 mA; VD = 12 V; see Figure 7 - 0.6 1.5 V IT = 100 mA; VD = VDRM(max); Tj = 125 °C 0.25 0.4 - V ID off-state current VD = VDRM(max); Tj = 125 °C - 0.1 0.5 mA IR reverse current VR = VRRM(max); Tj = 125 °C - 0.1 0.5 mA 200 1000 - V/µs Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; see Figure 12 RGK = 100 Ω 50 130 - V/µs tgt gate-controlled turn-on time ITM = 40 A; VD = VDRM(max); IG = 100 mA; dIG/dt = 5 A/µs gate open circuit - 2 - µs tq commutated turn-off time VDM = 0.67 × VDRM(max); Tj = 125 °C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω - 70 - µs BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 6 of 13 BT151S series L and R NXP Semiconductors Thyristors 001aaa953 1.6 VGT VGT(25°C) IGT IGT(25°C) 1.2 2 0.8 1 0.4 −50 0 50 100 150 001aaa952 3 0 −50 0 50 100 Tj (°C) Fig 7. Normalized gate trigger voltage as a function of junction temperature 001aaa959 30 150 Tj (°C) Fig 8. Normalized gate trigger current as a function of junction temperature 001aaa951 3 IL IL(25°C) IT (A) 2 20 (1) (2) (3) 1 10 0 0 0.5 1 1.5 2 0 −50 0 50 100 150 Tj (°C) VT (V) Vo = 1.06 V Rs = 0.0304 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 7 of 13 BT151S series L and R NXP Semiconductors Thyristors 001aaa950 3 001aaa949 104 IH IH(25°C) dVD/dt (V/µs) 2 103 (1) (2) 102 1 0 −50 10 0 50 100 150 0 50 Tj (°C) 100 150 Tj (°C) (1) RGK = 100 Ω (2) Gate open circuit Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 8 of 13 BT151S series L and R NXP Semiconductors Thyristors 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 E1 mounting base D2 D1 HD 2 L L2 1 L1 3 b1 b w M c A e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D1 D2 min E E1 min e e1 HD L L1 min L2 w y max mm 2.38 2.22 0.93 0.46 0.89 0.71 1.1 0.9 5.46 5.00 0.56 0.20 6.22 5.98 4.0 6.73 6.47 4.45 2.285 4.57 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig 13. Package outline SOT428 (DPAK) BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 9 of 13 BT151S series L and R NXP Semiconductors Thyristors 8. Mounting 7.0 7.0 1.5 2.15 2.5 4.57 001aab021 Plastic meets requirements of UL94 V-O at 3.175 mm Fig 14. SOT428: minimum pad size for surface-mounting BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 10 of 13 BT151S series L and R NXP Semiconductors Thyristors 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BT151S_SER_L_R_5 20061009 Product data sheet - BT151S_SERIES_4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Added type numbers BT151S-500L and BT151S-650L BT151S_SERIES_4 (9397 750 13161) 20040609 Product specification - BT151S_SERIES_3 BT151S_SERIES_3 20020101 Product specification - BT151S_SERIES_2 BT151S_SERIES_2 19990601 Product specification - BT151S_SERIES_1 BT151S_SERIES_1 19970901 Product specification - - BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 11 of 13 BT151S series L and R NXP Semiconductors Thyristors 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BT151S_SER_L_R_5 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 05 — 9 October 2006 12 of 13 NXP Semiconductors BT151S series L and R Thyristors 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 October 2006 Document identifier: BT151S_SER_L_R_5