N0118GAML

N0118GA SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier with ultra-sensitive gate in a SOT54 (TO-92) plastic package. 2. Features and benefits • • • High voltage capability Planar passivated for voltage ruggedness and reliability Ultra sensitive gate 3. Applications • • • • • Electronic ballasts Safety shut down and protection circuits Sensing circuits Smoke detectors Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IT(AV) average on-state current IT(RMS) RMS on-state current ITSM Tj Conditions Min Typ Max Unit - - 600 V half sine wave; Tlead ≤ 67 °C; Fig. 1 - - 0.51 A half sine wave; Tlead ≤ 67 °C; Fig. 2; Fig. 3 - - 0.8 A non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 state current - - 8 A half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - - 9 A - - 125 °C VD = 12 V; IT = 10 mA; Tj = 25 °C; Fig. 7 0.5 - 7 µA VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 13; Fig. 14 75 - - V/µs junction temperature Static characteristics IGT gate trigger current Dynamic characteristics dVD/dt rate of rise of off-state voltage N0118GA WeEn Semiconductors SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A Simplified outline Graphic symbol anode 2 G gate 3 K cathode A K G sym037 321 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number N0118GA N0118GA Product data sheet Package Name Description Version TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 N0118GA WeEn Semiconductors SCR 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM Min Max Unit repetitive peak off-state voltage - 600 V VRRM repetitive peak reverse voltage - 600 V IT(AV) average on-state current half sine wave; Tlead ≤ 67 °C; Fig. 1 - 0.51 A IT(RMS) RMS on-state current half sine wave; Tlead ≤ 67 °C; Fig. 2; Fig. 3 - 0.8 A ITSM non-repetitive peak onstate current half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 - 8 A half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - 9 A 2 2 Conditions I t I t for fusing tp = 10 ms; SIN - 0.32 A²s dIT/dt rate of rise of on-state current IT = 0.8 A; IG = 10 mA; dIG/dt = 0.1 A/µs - 50 A/µs IGM peak gate current - 1 A VRGM peak reverse gate voltage - 5 V PGM peak gate power - 2 W PG(AV) average gate power - 0.1 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C over any 20 ms period 003aag288 1.2 Ptot (W) a = 1.57 53 Tlead(max) (°C) 1.9 2.2 0.8 77 2.8 4 0.4 0 0 0.1 0.2 0.3 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 0.4 0.5 101 α IT(AV) (A) 125 0.6 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 1. Total power dissipation as a function of average on-state current; maximum values N0118GA Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 N0118GA WeEn Semiconductors SCR 003aag285 1 IT(RMS) (A) 003aag287 10 0.8 IT(RMS) (A) 8 0.6 6 0.4 4 0.2 2 67 °C 0 -50 0 50 0 10-2 100 150 Tlead (°C) (1) Tlead = 67 °C 10-1 1 10 surge duration (s) f = 50 Hz; Tlead = 67 °C Fig. 2. RMS on-state current as a function of lead temperature; maximum values Fig. 3. RMS on-state current as a function of surge duration; maximum values 003aag286 10 ITSM (A) 8 6 4 IT ITSM 2 0 t tp Tj(init) = 25 °C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values N0118GA Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 N0118GA WeEn Semiconductors SCR 003aag289 103 IT ITSM ITSM (A) t tp Tj(init) = 25 °C max 102 10 1 10-5 10-4 10-3 10-2 tp (s) 10-1 tp = 10 ms Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values N0118GA Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 13 N0118GA WeEn Semiconductors SCR 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-lead) thermal resistance from junction to lead Fig. 6 - - 60 K/W Rth(j-a) thermal resistance from junction to ambient free air printed circuit board mounted: lead length = 4 mm - 150 - K/W 001aab451 102 Zth(j-lead) (K/W) 10 1 P 10-1 tp 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) t 10 Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width N0118GA Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 13 N0118GA WeEn Semiconductors SCR 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C; Fig. 7 0.5 - 7 µA IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8 - - 6 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9; Fig. 10 - - 5 mA VT on-state voltage IT = 1.6 A; Tj = 25 °C; Fig. 11 - 1.4 1.95 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 12 - - 0.8 V ID off-state current VD = 400 V; Tj = 25 °C - - 10 µA VD = 600 V; RGK(ext) = 1 kΩ; Tj = 125 °C - - 100 µA VR = 600 V; Tj = 25 °C; RGK(ext) = 1 kΩ - - 10 µA VR = 600 V; Tj = 125 °C; RGK(ext) = 1 kΩ - - 100 µA VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 13; Fig. 14 75 - - V/µs IR reverse current Dynamic characteristics dVD/dt rate of rise of off-state voltage 003aag291 2.5 003aag292 1.6 IGT IGT(25°C) 2.0 IL IL(25°C) 1.2 1.5 1.0 0.8 0.5 0 -50 0 50 100 Tj (°C) 0.4 -50 150 Fig. 7. Normalized gate trigger current as a function of junction temperature N0118GA Product data sheet 0 50 100 Tj (°C) 150 RGK = 1 kΩ Fig. 8. Normalized latching current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 13 N0118GA WeEn Semiconductors SCR 003aag293 1.6 003aag294 20 A B IH 16 IH(25°C) 1.2 12 8 0.8 4 0.4 -50 0 50 100 Tj (°C) 0 150 003aag284 4 103 RGK 104 A = IH [RGK] B = IH [RGK = 1 kΩ] Tj = 25 °C RGK = 1 kΩ Fig. 9. Normalized holding current as a function of junction temperature 102 10 Fig. 10. Normalized holding current as a function of gate-cathode resistance (typical values) 003aag290 1.2 VGT VGT(25°C) 1.1 IT (A) 3 1.0 2 0.9 1 0 (1) 0 1 (2) 0.8 (3) 2 VT (V) 3 Vo = 1.383 V; Rs = 0.4 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values 0.7 -50 0 50 100 Tj (°C) 150 Fig. 12. Normalized gate trigger voltage as a function of junction temperature Fig. 11. On-state current as a function of on-state voltage N0118GA Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 13 N0118GA WeEn Semiconductors SCR 003aag089 60 003aag088 10 A B A B 40 1 20 0 0 2 4 CGK (nF) 10-1 6 Fig. 13. Normalized dVd/dt immunity as a function of gate-cathode capacitance (typical values) Product data sheet 0.4 0.8 1.2 1.6 2.0 RGK (kΩ) A = dV / dt [CGK] B = dV / dt [RGK = 1 kΩ] Tj = 125 °C; RGK = 1 kΩ; VDM = 402 V A = dV / dt [CGK] B = dV / dt [RGK = 1 kΩ] Tj = 125 °C; RGK = 1 kΩ; VDM = 402 V N0118GA 0 Fig. 14. Normalized dVd/dt immunity as a function of gate-cathode resistance (typical values) All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 13 N0118GA WeEn Semiconductors SCR 10. Package outline Fig. 15. Package outline TO-92 (SOT54) N0118GA Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 13 N0118GA WeEn Semiconductors SCR Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. N0118GA Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 13 N0118GA WeEn Semiconductors SCR Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. N0118GA Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 13 N0118GA WeEn Semiconductors SCR 12. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 6 9. Characteristics..............................................................7 10. Package outline........................................................ 10 11. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 5 September 2018 N0118GA Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 13