BT151S-500L
SCR
11 June 2018
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable
plastic package intended for use in applications requiring high bidirectional blocking voltage
capability, high surge current capability and high thermal cycling performance.
2. Features and benefits
•
•
•
•
•
Good bidirectional blocking voltage capability
High surge current capability
High thermal cycling performance
Sensitive gate
Surface mountable package
3. Applications
•
•
•
•
Ignition circuits
Motor control
Protection circuits
Voltage regulation
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VRRM
repetitive peak reverse
voltage
IT(AV)
average on-state
current
IT(RMS)
RMS on-state current
ITSM
Tj
Conditions
Min
Typ
Max
Unit
-
-
500
V
half sine wave; Tmb ≤ 103 °C; Fig. 1
-
-
7.5
A
half sine wave; Tmb ≤ 103 °C; Fig. 2;
Fig. 3
-
-
12
A
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5
state current
-
-
120
A
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms
-
-
132
A
-
-
125
°C
-
2
5
mA
junction temperature
Static characteristics
IGT
gate trigger current
Dynamic characteristics
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 8
BT151S-500L
WeEn Semiconductors
SCR
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
dVD/dt
rate of rise of off-state
voltage
VDM = 335 V; Tj = 125 °C; RGK = 100 Ω;
(VDM = 67% of VDRM); exponential
waveform; Fig. 13
200
1000
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
Simplified outline
Graphic symbol
cathode
A
K
G
2
A
anode
3
G
gate
mb
A
mounting base; connected to
anode
sym037
DPAK (SOT428)
6. Ordering information
Table 3. Ordering information
Type number
BT151S-500L
BT151S-500L
Product data sheet
Package
Name
Description
Version
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
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7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDRM
Min
Max
Unit
repetitive peak off-state
voltage
-
500
V
VRRM
repetitive peak reverse
voltage
-
500
V
IT(AV)
average on-state current half sine wave; Tmb ≤ 103 °C; Fig. 1
-
7.5
A
IT(RMS)
RMS on-state current
half sine wave; Tmb ≤ 103 °C; Fig. 2;
Fig. 3
-
12
A
ITSM
non-repetitive peak onstate current
half sine wave; Tj(init) = 25 °C; tp = 10 ms;
Fig. 4; Fig. 5
-
120
A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
-
132
A
2
Conditions
2
I t
I t for fusing
tp = 10 ms; SIN
-
72
A²s
dIT/dt
rate of rise of on-state
current
IG = 10 mA
-
50
A/µs
IGM
peak gate current
-
2
A
VRGM
peak reverse gate
voltage
-
5
V
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.5
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
over any 20 ms period
001aab019
15
a=
1.57
Ptot
(W)
10
Tmb(max)
(°C)
1.9
2.2
98
107
2.8
4
5
0
0
2
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
4
6
116
α
IT(AV) (A)
8
125
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
BT151S-500L
Product data sheet
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BT151S-500L
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SCR
001aaa998
16
001aaa954
25
IT(RMS)
(A)
20
IT(RMS)
(A)
12
15
8
10
4
5
0
- 50
0
50
100
Tmb (°C)
0
10- 2
150
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
10- 1
1
10
surge duration (s)
f = 50 Hz; Tmb = 103 °C
Fig. 3. RMS on-state current as a function of surge
duration; maximum values
003aab829
160
ITSM
(A)
120
80
IT
ITSM
40
0
t
tp
Tj initial = 25 °C max
1
102
10
number of cycles
103
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151S-500L
Product data sheet
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BT151S-500L
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SCR
001aaa956
103
ITSM
(A)
dlT/dt limit
102
IT
ITSM
t
tp
Tj initial = 25 °C max
10
10- 5
10- 4
10- 3
tp (s)
10- 2
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT151S-500L
Product data sheet
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8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 6
-
-
1.8
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
mounted on an FR4 printed-circuit
board;; Fig. 7
-
75
-
K/W
001aaa963
10
Zth(j-mb)
(K/W)
1
10- 1
P
δ=
tp
T
10- 2
tp
10- 3
10- 5
10- 4
10- 3
10- 2
10- 1
1
t
T
tp (s)
10
Fig. 6. Transient thermal impedance from junction to mounting base as as function of pulse width
7.0
7.0
1.5
2.15
2.5
4.57
001aab021
Fig. 7. Minimum footprint SOT428
BT151S-500L
Product data sheet
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9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 8
-
2
5
mA
IL
latching current
VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 9
-
10
40
mA
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 10
-
7
20
mA
VT
on-state voltage
IT = 23 A; Tj = 25 °C; Fig. 11
-
1.4
1.75
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 12
-
0.6
1.5
V
VD = 500 V; IT = 0.1 A; Tj = 125 °C;
Fig. 12
0.25
0.4
-
V
ID
off-state current
VD = 500 V; Tj = 125 °C
-
0.1
0.5
mA
IR
reverse current
VR = 500 V; Tj = 125 °C
-
0.1
0.5
mA
VDM = 335 V; Tj = 125 °C; RGK = 100 Ω;
(VDM = 67% of VDRM); exponential
waveform; Fig. 13
200
1000
-
V/µs
VDM = 335 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 13
50
130
-
V/µs
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
tgt
gate-controlled turn-on ITM = 40 A; VD = 500 V; IG = 0.1 A; dIG/
time
dt = 5 A/µs; Tj = 25 °C
-
2
-
µs
tq
commutated turn-off
time
-
70
-
µs
VDM = 335 V; Tj = 125 °C; ITM = 20 A;
VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 50 V/µs; RGK(ext) = 100 Ω; (VDM =
67% of VDRM)
001aaa952
3
IGT
IGT(25°C)
IL
IL(25°C)
2
2
1
1
0
- 50
0
50
100
Tj (°C)
0
- 50
150
Fig. 8. Normalized gate trigger current as a function of
junction temperature
BT151S-500L
Product data sheet
001aaa951
3
0
50
100
Tj (°C)
150
Fig. 9. Normalized latching current as a function of
junction temperature
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SCR
001aaa950
3
001aaa959
30
IH
IH(25°C)
IT
(A)
2
20
(1)
1
0
- 50
(2)
(3)
10
0
50
100
Tj (°C)
0
150
0
0.5
1
1.5
VT (V)
2
Vo = 1.06 V; Rs = 0.0304 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. Normalized holding current as a function of
junction temperature
Fig. 11. On-state current as a function of on-state
voltage
001aaa953
1.6
001aaa949
104
VGT
VGT(25°C)
dVD/dt
(V/µs)
1.2
103
(1)
(2)
102
0.8
0.4
- 50
0
50
100
Tj (°C)
10
150
Fig. 12. Normalized gate trigger voltage as a function of
junction temperature
BT151S-500L
Product data sheet
0
50
100
Tj (°C)
150
(1) RGK = 100 Ω;
(2) gate open circuit
Fig. 13. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum values
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10. Package outline
Fig. 14. Package outline DPAK (SOT428)
BT151S-500L
Product data sheet
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11. Legal information
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equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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with the same product type number(s) and title. A short data sheet is
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accordance with the Terms and conditions of commercial sale of WeEn
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BT151S-500L
Product data sheet
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
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associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default,
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in the customer’s applications or products, or the application or use by
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Semiconductors products in order to avoid a default of the applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Trademarks
Notice: All referenced brands, product names, service names and
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12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 6
9. Characteristics..............................................................7
10. Package outline.......................................................... 9
11. Legal information..................................................... 10
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Date of release: 11 June 2018
BT151S-500L
Product data sheet
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