BTH151S-650R,118

DISCRETE SEMICONDUCTORS DATA SHEET BTH151S-650R Thyristor High Repetitive Surge Product specification March 2001 WeEn Semiconductors Product specification Thyristor High Repetitive Surge BTH151S-650R QUICK REFERENCE DATA GENERAL DESCRIPTION Passivated thyristor in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. This thyristor has a high repetitive surge specification which makes it suitable for applications where high inrush currents or stall currents are likely to occur on a repetitive basis. PINNING - SOT428 PIN cathode 2 anode 3 gate tab VDRM, VRRM IT(AV) IT(RMS) ITSM ITRM PARAMETER Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Repetitive peak on-state current PIN CONFIGURATION DESCRIPTION 1 SYMBOL anode MAX. UNIT 650 7.5 12 110 60 V A A A A SYMBOL tab a k g DPAK (SOT428) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state voltages half sine wave; - IT(AV) Average on-state current Tmb ≤ 103 ˚C IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10ms, τ = 3s, Tmb ≤ 45˚C, no. of surges = 100k t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/μs ITRM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj Repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature MAX. 1 UNIT 650 V - 7.5 12 A A - 110 121 60 A A A - 61 50 A2s A/μs -40 - 2 5 5 5 0.5 150 125 A V V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. March 2001 1 Rev 1.200 WeEn Semiconductors Product specification Thyristor High Repetitive Surge BTH151S-650R THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to mounting base Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient - - 1.8 K/W - 75 - K/W Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C 0.25 - 2 10 7 1.4 0.6 0.4 0.1 15 40 20 1.75 1.5 0.5 mA mA mA V V V mA MIN. TYP. MAX. UNIT 50 200 - 130 1000 2 - V/μs V/μs μs - 70 - μs DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; Gate open circuit RGK = 100 Ω ITM = 40 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 20 A; VR = 25 V; dITM/dt = 30 A/μs; dVD/dt = 50 V/μs; RGK = 100 Ω tgt Gate controlled turn-on time Circuit commutated turn-off time tq Ip = 60 A 10ms 3 s (Minimum) Fig.1. Repetitive surge conditions. IP=60A (f=50Hz) at Tc=45˚C. Maximum number of cycles n=100k. Repetitive cycle T=3 seconds minimum. March 2001 2 Rev 1.200 WeEn Semiconductors Product specification Thyristor High Repetitive Surge BTH151S-650R 15 Ptot / W Tmb(max) / C conduction angle degrees 30 60 90 120 180 10 form factor 120 98 100 time T Tj initial = 25 C max 1.9 2.2 107 2.8 ITSM IT a = 1.57 a 4 2.8 2.2 1.9 1.57 ITSM / A 80 4 60 116 5 40 20 0 0 1 2 3 4 5 IF(AV) / A 6 7 125 8 0 10 100 Number of half cycles at 50Hz 1 1000 Fig.5. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.2. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 1 25 ITSM / A IT(RMS) / A 20 15 dI T /dt limit 100 10 I TSM IT 5 time T Tj initial = 25 C max 10 10us 100us 0 0.01 10ms 1ms 0.1 1 surge duration / s T/s Fig.6. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 103˚C. Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. 15 10 IT(RMS) / A 1.6 VGT(Tj) VGT(25 C) 103 C 1.4 10 1.2 1 5 0.8 0.6 0 -50 0 50 Tmb / C 100 0.4 -50 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. March 2001 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.200 WeEn Semiconductors Product specification Thyristor High Repetitive Surge BTH151S-650R 3 IGT(Tj) IGT(25 C) 30 IT / A Tj = 125 C Tj = 25 C 25 2.5 Vo = 1.06 V Rs = 0.0304 ohms 2 max 15 1.5 1 10 0.5 5 0 -50 0 50 Tj / C 100 0 150 IL(Tj) IL(25 C) 0 0.5 1 VT / V 1.5 2 Fig.11. Typical and maximum on-state characteristic. Fig.8. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 typ 20 10 BT145 2.5 Zth j-mb (K/W) 1 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 1ms 10ms tp / s 0.1s 1s 10s Fig.12. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.9. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms IH(Tj) IH(25 C) 10000 dVD/dt (V/us) 2.5 1000 2 RGK = 100 Ohms 1.5 100 1 gate open circuit 0.5 0 -50 0 50 Tj / C 100 10 150 50 100 150 Tj / C Fig.10. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. March 2001 0 Fig.13. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 4 Rev 1.200 WeEn Semiconductors Product specification Thyristor High Repetitive Surge BTH151S-650R MECHANICAL DATA March 2001 5 Rev 1.200 WeEn Semiconductors Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. 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