GA080TH65

GA080TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT(AVM) = 80 A Qrr = 4.2 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications • Grid Tied Solar Inverters • Wind Power Inverters • HVDC Power Conversion • Utility Scale Power Conversion • Trigger Circuits/Ignition Circuits Maximum Ratings Parameter Repetitive peak forward voltage Repetitive peak reverse voltage Maximum average on-state current RMS on-state current Non-repetitive peak on-state current Power dissipation Operating and storage temperature Symbol VFBM VRBM IT(AVM) IT(RMS) IT,max Ptot Tj, Tstg Conditions Values 6500 50 80 139 tbd 1563 -55 to 150 Tj = 25 °C Tj = 25 °C TC 125 °C TC 125 °C TC= 25 °C, tp = 2 us, D = 0.1 TC= 25 °C Unit V V A A A W °C Electrical Characteristics Parameter Symbol Maximum peak on state voltage VKA(ON) Anode-cathode threshold voltage Anode-cathode slope resistance VKA(TO) RAK Leakage current Gate trigger current Holding current Rise time Delay time Reverse recovery charge Recovered charge, 50% chord Reverse recovery current Circuit commutated turn-off time IL IGT IH tR tD Qrr Qra Irm tq Conditions IK = -80 A, Tj = 25 °C IK = -80 A, Tj = 150 °C Tj = 25 °C (150 °C) Tj = 25 °C (150 °C), IK = -80 A VKA = -6500 V, V GA = 0 V, Tj = 25 °C VKA = -6500 V, VGA = 0 V, Tj = 150 °C Tj = 25 °C, tP = 10 µs Tj = 25 °C IG = -3 A, VKA = -2200 V IK = -80 A, Tj = 25 °C dI/dt = 430 A/us, IK = -70 A, VKA = 20 V dV/dt(re-app) = -460 V/us, Tj = 25 °C min. Values typ. max. -3.70 -3.45 -3.0(-2.7) 6.0(6.3) 15 50 -100 tbd 190 50 4.2 2.3 20 10.1 Unit V V m µA mA mA ns ns µC µC A µs Thermal Characteristics Thermal resistance, junction - case RthJC 0.08 °C/W 1.5 1.3 30 Nm Nm g Mechanical Properties Mounting torque for base Mounting torque for top Weight Mb Mt Wt Heat sink surface must be optically flat 1. Considering worst case Zth conditions http://www.genesicsemi.com/index.php/sic-products/thyristors November 2010 Preliminary Datasheet http://www.genesicsemi.com Page 1 of 3 GA080TH65 Figure 1: Typical On State Characteristics Figure 2: Typical Forward Blocking Characteristics Figure 3: Typical Current Derating Curves (D = tP/T, tP = 400 µs1) Figure 4: Typical Current Rating versus Pulse Duration Curves at TC = 120 OC Figure 5: Typical Turn On Characteristics at 25 °C November 2010 Figure 6: Typical Turn Off Characteristics at 25 °C Preliminary Datasheet http://www.genesicsemi.com Page 2 of 3 GA080TH65 Figure 7: Typical Reverse Recovery Characteristics at 25 °C Figure 8: Typical Transient Thermal Impedance Revision History Date 2010/11/13 Revision 1 Comments First generation release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. November 2010 Preliminary Datasheet http://www.genesicsemi.com Page 3 of 3