BT134-600E,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors TO -22 0 AB BT134-600E 4Q Triac 21 November 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications. This "series E" sensitive gate triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • • • • • • • • Compact package Direct interfacing to logic level ICs Direct interfacing to low power gate drive circuits High blocking voltage capability Low holding current for low current loads and lowest EMI at commutation Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants 3. Applications • • • General purpose low power motor control Home appliances Industrial process control 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 25 A IT(RMS) RMS on-state current - - 4 A - 2.5 10 mA full sine wave; Tmb ≤ 107 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BT134-600E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G-; - 4 10 mA - 5 10 mA - 11 25 mA - 2.2 15 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 Graphic symbol T2 T1 G sym051 1 2 3 SIP3 (SOT82) 6. Ordering information Table 3. Ordering information Type number BT134-600E BT134-600E Product data sheet Package Name Description Version SIP3 plastic single-ended package; 3 leads (in-line) SOT82 All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 2 / 13 BT134-600E NXP Semiconductors 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1; Min Max Unit - 600 V - 4 A - 25 A - 27 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I t I2t for fusing tp = 10 ms; SIN - 3.1 A s dIT/dt rate of rise of on-state current IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs - 50 A/µs - 50 A/µs - 10 A/µs 2 2 T2+ G+ IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ GIT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- GIT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G+ IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C BT134-600E Product data sheet over any 20 ms period All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 3 / 13 BT134-600E NXP Semiconductors 4Q Triac 003aae828 5 003aae830 12 IT(RMS) (A) 10 IT(RMS) (A) 4 8 3 6 2 4 1 2 0 - 50 0 50 100 0 10-2 150 10-1 1 10 surge duration(s) Tmb (°C) Fig. 1. f = 50 Hz Tmb ≤ 107 °C RMS on-state current as a function of mounting base temperature; maximum values Fig. 2. RMS on-state current as a function of surge duration; maximum values 003aae827 8 conduction form angle factor Ptot (degrees) a (W) 30 4 6 60 2.8 90 2.2 120 1.9 180 1.57 # = 180° # 120° 90° 4 60° 30° 2 0 0 1 2 3 4 IT(RMS) (A) 5 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values BT134-600E Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 4 / 13 BT134-600E NXP Semiconductors 4Q Triac 003aae831 30 ITSM (A) 25 20 15 ITSM IT 10 t 5 1/ f Tj(init)= 25 °C max 0 1 10 102 103 104 num ber of cycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aae829 103 ITSM IT t ITSM (A) tp Tj(init)= 25 °C max 102 (1) (2) 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT134-600E Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 5 / 13 BT134-600E NXP Semiconductors 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base half cycle; Fig. 6 - - 3.7 K/W full cycle; Fig. 6 - - 3 K/W thermal resistance from junction to ambient in free air - 100 - K/W Rth(j-a) 003aae836 10 Zth(j-mb) (K/W) unidirectional 1 bidirectional 10- 1 P tp 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 1 t 10 tp (s) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT134-600E Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 6 / 13 BT134-600E NXP Semiconductors 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA - 4 10 mA - 5 10 mA - 11 25 mA - 3 15 mA - 10 20 mA - 2.5 15 mA - 4 20 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2.2 15 mA VT on-state voltage IT = 5 A; Tj = 25 °C; Fig. 10 - 1.4 1.7 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V 0.25 0.4 - V VD = 600 V; Tj = 125 °C - 0.1 0.5 mA VDM = 402 V; Tj = 125 °C; (VDM = 67% - 50 - V/µs - 2 - µs Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 6 A; VD = 600 V; IG = 0.1 A; dIG/ time dt = 5 A/µs BT134-600E Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 7 / 13 BT134-600E NXP Semiconductors 4Q Triac 003aae833 3 003aae835 3 IL IL(25°C) IGT IGT(25 °C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 0 - 60 1 (4) - 10 40 90 Tj (°C) 0 - 60 140 40 90 140 Tj (°C) (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig. 7. - 10 Fig. 8. Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 003aae837 2.0 003aae834 12 IH IH(25°C) IT (A) 1.5 8 1.0 4 0.5 (1) 0 - 60 (2) (3) 0 - 10 40 90 140 0 1 2 Tj (°C) Fig. 9. 3 VT (V) Vo = 1.27 V Normalized holding current as a function of junction temperature Rs = 0.091 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage BT134-600E Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 8 / 13 BT134-600E NXP Semiconductors 4Q Triac 003aae832 1.6 VGT VGT(25 °C) 1.2 0.8 0.4 0 - 60 - 10 40 90 140 Tj (°C) Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT134-600E Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 9 / 13 BT134-600E NXP Semiconductors 4Q Triac 10. Package outline Plastic single-ended package; 3 leads (in-line) SOT82 E A q P D L1 Q L 1 2 3 b c w M e e1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A b c D E e e1 L L1 max. P Q q w mm 2.8 2.3 0.88 0.65 0.58 0.47 11.1 10.5 7.8 7.2 2.29 4.58 16.5 15.3 2.54 3.1 2.5 1.5 0.9 3.9 3.5 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for body and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 SOT82 Fig. 12. Package outline SIP3 (SOT82) BT134-600E Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 10 / 13 BT134-600E NXP Semiconductors 4Q Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. Legal information 11.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. 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In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BT134-600E Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 12 / 13 BT134-600E NXP Semiconductors 4Q Triac 12. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................6 9 Characteristics ....................................................... 7 10 Package outline ................................................... 10 11 11.1 11.2 11.3 11.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 November 2013 BT134-600E Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 13 / 13