BTA204-800E
3Q Hi-Com Triac
25 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package.
This "series E" triac balances the requirements of commutation performance and gate sensitivity
and is intended for interfacing with low power drivers and logic ICs including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
High commutation capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
•
•
•
AC solenoids
General purpose motor control
Home appliances
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current
ITSM
Tj
Conditions
Min
Typ
Max
Unit
-
-
800
V
-
-
4
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
state current
-
-
25
A
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
-
-
27
A
-
-
125
°C
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
-
10
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
-
-
10
mA
full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
junction temperature
Static characteristics
IGT
gate trigger current
BTA204-800E
WeEn Semiconductors
3Q Hi-Com Triac
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
-
-
10
mA
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
-
-
12
mA
VT
on-state voltage
IT = 5 A; Tj = 25 °C; Fig. 10
-
1.4
1.7
V
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
30
-
-
V/µs
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 10 V/µs; gate open circuit
2.1
-
-
A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 0.1 V/µs; gate open circuit
8
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main
terminal 2
Graphic symbol
mb
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
BTA204-800E
BTA204-800E
Product data sheet
Package
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
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7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak onstate current
2
Conditions
2
Min
Max
Unit
-
800
V
full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
-
4
A
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5
-
25
A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
-
27
A
I t
I t for fusing
tp = 10 ms; SIN
-
3.1
A²s
dIT/dt
rate of rise of on-state
current
IG = 0.2 A
-
100
A/µs
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.5
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
over any 20 ms period
003aad615
5
IT(RMS)
(A)
4
003aag083
12
I T(RMS )
(A)
10
107 °C
8
3
6
2
4
1
0
-50
2
0
50
100
Tmb (°C)
0
10-2
150
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
BTA204-800E
Product data sheet
10-1
1
10
s urge duration (s)
f = 50 Hz; Tmb = 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
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3Q Hi-Com Triac
003aag081
8
Ptot
(W)
6
conduction
angle
(degrees)
form
factor
α
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
101
Tmb(max)
104 (°C)
α = 180 °
α
107
120 °
110
90 °
60 °
4
113
30 °
116
2
119
122
0
0
1
2
3
4
5
IT(RMS) (A)
125
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
003aag085
103
ITSM
IT
I TS M
(A)
t
tp
Tj(init) = 25 °C max
102
(1)
10
10-5
10-4
10-3
10-2
t p (s)
10-1
tp ≤ 20 ms; (1) dIT/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA204-800E
Product data sheet
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WeEn Semiconductors
3Q Hi-Com Triac
003aag086
30
ITSM
(A)
20
ITSM
IT
10
t
1/f
0
Tj(init) = 25 °C max
1
102
10
number of cycles
103
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA204-800E
Product data sheet
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8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
full cycle; Fig. 6
-
-
3
K/W
half cycle; Fig. 6
-
-
3.7
K/W
thermal resistance
from junction to
ambient free air
in free air
-
60
-
K/W
Rth(j-a)
003aag087
10
(1)
Zth(j-mb)
(K/W)
(2)
1
10-1
P
10-2
10-5
tp
10-4
10-3
10-2
10-1
1
tp (s)
t
10
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BTA204-800E
Product data sheet
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9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
-
10
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
-
-
10
mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
-
-
10
mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
-
-
12
mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
-
-
18
mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
-
-
12
mA
Static characteristics
IGT
IL
gate trigger current
latching current
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
-
-
12
mA
VT
on-state voltage
IT = 5 A; Tj = 25 °C; Fig. 10
-
1.4
1.7
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
-
0.7
1
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25
0.4
-
V
VD = 800 V; Tj = 125 °C
-
0.1
0.5
mA
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
30
-
-
V/µs
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 10 V/µs; gate open circuit
2.1
-
-
A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 0.1 V/µs; gate open circuit
8
-
-
A/ms
BTA204-800E
Product data sheet
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3Q Hi-Com Triac
003aad600
3
003aad604
3
IGT
IL
IGT(25°C)
IL(25°C)
(1)
2
2
(2)
(3)
1
1
0
-50
0
50
100
Tj (°C)
0
-50
150
(1) T2- G(2) T2+ G(3) T2+ G+
0
50
100
Tj (°C)
150
Fig. 8. Normalized latching current as a function of
junction temperature
Fig. 7. Normalized gate trigger current as a function of
junction temperature
003aad606
3
IH
(1) (2)
IT
(A)
IH(25°C)
2
8
1
4
0
-50
003aad611
12
0
50
100
Tj (°C)
0
150
0
1
2
(3)
VT (V)
3
Vo = 1.27 V; Rs = 0.091 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 9. Normalized holding current as a function of
junction temperature
Fig. 10. On-state current as a function of on-state
voltage
BTA204-800E
Product data sheet
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003aad596
1.6
VGT
VGT(25°C)
1.2
0.8
0.4
-50
0
50
100
Tj (°C)
150
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
BTA204-800E
Product data sheet
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10. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
e
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig. 12. Package outline TO-220AB (SOT78)
BTA204-800E
Product data sheet
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Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Definitions
Draft — The document is a draft version only. The content is still under
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modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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Limited warranty and liability — Information in this document is believed
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towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
Product data sheet
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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specified use without further testing or modification.
Please consult the most recently issued document before initiating or
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The product status of device(s) described in this document may have
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multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
BTA204-800E
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
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liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without WeEn Semiconductors’ warranty
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Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
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reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 6
9. Characteristics..............................................................7
10. Package outline........................................................ 10
11. Legal information..................................................... 11
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WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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Date of release: 25 September 2018
BTA204-800E
Product data sheet
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