BTA208X-1000C0,127

TO -2 20F BTA208X-1000C0 3Q Hi-Com Triac 22 May 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package. This triac is intended for use in motor control circuits where very high blocking voltage, high static and dynamic dV/dt as well as high dIcom/dt can occur. This "series C0" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • • • • • • • • 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt Isolated mounting base package Optimized for highest noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very high voltage capability 3. Applications • • • Compressor starting control circuits General purpose motor controls Reversing induction motor controls e.g. vertical axis washing machines 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 1000 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 65 A IT(RMS) RMS on-state current - - 8 A 5 11 35 mA full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G-; 5 14 35 mA 5 25 35 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Graphic symbol mb T2 sym051 T1 G 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA208X-1000C0 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A BTA208X-1000C0/L01 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 7. Marking Table 4. Marking codes Type number Marking code BTA208X-1000C0 BTA208X-1000C0/L01 BTA208X-1000C0 Product data sheet BTA208X-1000C0L01 All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 13 BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2; Min Max Unit - 1000 V - 8 A - 65 A - 71 A Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I t I2t for fusing tp = 10 ms; SIN - 21 A s dIT/dt rate of rise of on-state current IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C 2 over any 20 ms period 003aaa969 10 (A) 20 6 15 4 10 2 5 0 - 50 Fig. 1. (A) 73 °C 8 0 50 100 Th (°C) 0 10- 2 150 RMS on-state current as a function of heatsink temperature; maximum values BTA208X-1000C0 Product data sheet 003aaa970 25 IT(RMS) IT(RMS) 2 10- 1 1 10 surge duration (s) f = 50 Hz; Th = 73 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 13 BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac 003aaa967 12 Ptot (W) 10 8 6 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α = 180° 120° 71 Th(max) (°C) 80 90° α 89 60° 30° 98 4 107 2 116 0 0 2 4 6 8 125 10 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aaa968 80 ITSM (A) 60 40 ITSM IT 20 t 1/f 0 Tj(init) = 25 °C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA208X-1000C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 13 BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac 003aab121 103 ITSM IT t ITSM (A) tp Tj(init) = 25 °C max (1) 102 10 10- 2 10- 1 1 10 tp (ms) 102 tp ≤ 20 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA208X-1000C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 13 BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink full cycle or half cycle; with heatsink compound; Fig. 6 - - 4.5 K/W full cycle or half cycle; without heatsink compound; Fig. 6 - - 6.5 K/W thermal resistance from junction to ambient in free air - 55 - K/W Rth(j-a) 003aaf915 10 (1) (2) Zth(j-h) (K/W) 1 (3) (4) 10- 1 P 10- 2 t tp 10- 3 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 tp (s) (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C - 10 - pF BTA208X-1000C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 13 BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac 11. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; 5 11 35 mA 5 14 35 mA 5 25 35 mA - 25 50 mA - 48 75 mA - 30 50 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 20 50 mA VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.25 0.4 - V VD = 1000 V; Tj = 125 °C - 0.1 0.5 mA VDM = 670 V; Tj = 125 °C; (VDM = 67% 1500 4000 - V/µs 12 32 - A/ms Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit; Fig. 12 BTA208X-1000C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 13 BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac 3 003aac888 001aab100 3 (1) IGT IL IL(25°C) IGT(25°C) 2 2 (2) (3) 1 1 0 - 50 0 50 100 Tj (°C) 0 -50 150 (1) T2- G(2) T2+ G(3) T2+ G+ Fig. 7. Fig. 8. 0 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 001aab099 3 003aaa971 25 IT (A) IH IH(25°C) 20 2 15 10 1 5 0 -50 Fig. 9. 0 50 100 Tj (°C) 0 150 (1) 0 (2) 1 (3) 2 VT (V) 3 Vo = 1.264 V; Rs = 0.0378 Ω Normalized holding current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage BTA208X-1000C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 13 BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac 001aab101 1.6 VGT 003aaa973 103 dIcom/dt (A/ms) VGT(25°C) 102 1.2 typ min 0.8 0.4 -50 10 0 50 100 Tj (°C) 1 150 20 60 100 Tj (°C) 140 Fig. 11. Normalized gate trigger voltage as a function of Fig. 12. Rate of change of commutating current as a junction temperature function of junction temperature; typical and minimum values BTA208X-1000C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 13 BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac 12. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A P A1 q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b w M c e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 (1) L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are # 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 3-lead TO-220F Fig. 13. Package outline TO-220F (SOT186A) BTA208X-1000C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 13 BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 13. Legal information 13.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BTA208X-1000C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 13 BTA208X-1000C0 NXP Semiconductors 3Q Hi-Com Triac 14. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................6 10 Isolation characteristics ........................................6 11 Characteristics ....................................................... 7 12 Package outline ................................................... 10 13 13.1 13.2 13.3 13.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 May 2014 BTA208X-1000C0 Product data sheet All information provided in this document is subject to legal disclaimers. 22 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 13