BT138X-800,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors TO -2 20F BT138X-800 4Q Triac 1 May 2015 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. 2. Features and benefits • • • • • • High blocking voltage capability High noise immunity Isolated package Less sensitive gate for improved noise immunity Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants 3. Applications • • General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 800 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 95 A Tj junction temperature - - 125 °C IT(RMS) RMS on-state current - - 12 A - 5 35 mA - 8 35 mA full sine wave; Th ≤ 56 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BT138X-800 NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G-; - 10 35 mA - 22 70 mA 100 250 - V/µs Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated mb Graphic symbol T2 sym051 T1 G 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT138X-800 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A BT138X-800/L02 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 7. Marking Table 4. Marking codes Type number Marking code BT138X-800 BT138X-800 BT138X-800/L02 BT138X-800 Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 13 BT138X-800 NXP Semiconductors 4Q Triac 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 56 °C; Fig. 1; Fig. 2; Min Max Unit - 800 V - 12 A - 95 A - 105 A Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I t I t for fusing tp = 10 ms; sine-wave pulse - 45 A s dIT/dt rate of rise of on-state current IG = 70 mA; T2+ G+ - 50 A/µs IG = 70 mA; T2+ G- - 50 A/µs IG = 140 mA; T2- G+ - 10 A/µs IG = 70 mA; T2- G- - 50 A/µs 2 2 2 IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C over any 20 ms period 003aaj939 15 IT(RMS) (A) 12 Fig. 1. IT(RMS) 56 °C (A) 80 9 60 6 40 3 20 0 -50 0 50 100 Th (°C) 0 150 RMS on-state current as a function of heatsink temperature; maximum values BT138X-800 Product data sheet 003aaj941 100 10-2 10-1 1 10 surge duration (s) f = 50 Hz; Th = 56 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 13 BT138X-800 NXP Semiconductors 4Q Triac 003aaj943 20 Ptot (W) 16 12 conduction angle, α (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 α 45 Th(max) (°C) 61 α = 180° 120° 90° α 77 60° 30° 8 93 4 109 0 0 3 6 9 12 125 15 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aaj944 100 ITSM (A) 80 60 40 ITSM IT t 20 1/f 0 Tj(init) = 25 °C max 1 102 10 number of cycles (n) 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT138X-800 Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 13 BT138X-800 NXP Semiconductors 4Q Triac 003aaj945 103 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max 102 (1) (2) 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT138X-800 Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 13 BT138X-800 NXP Semiconductors 4Q Triac 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink full or half cycle; with heatsink compound; Fig. 6 - - 4 K/W full or half cycle; without heatsink compound; Fig. 6 - - 5.5 K/W thermal resistance from junction to ambient in free air - 55 - K/W Rth(j-a) 003aaj342 10 Zth(j-h) (K/W) (1) (2) 1 (3) (4) 10-1 P 10-2 t tp 10-3 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C - 10 - pF BT138X-800 Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 13 BT138X-800 NXP Semiconductors 4Q Triac 11. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - 5 35 mA - 8 35 mA - 10 35 mA - 22 70 mA - 7 40 mA - 20 60 mA - 8 40 mA - 10 60 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 6 30 mA VT on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.4 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V 0.25 0.4 - V VD = 800 V; Tj = 125 °C - 0.1 0.5 mA VDM = 536 V; Tj = 125 °C; (VDM = 67% 100 250 - V/µs - 2 - µs Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 16 A; VD = 800 V; IG = 0.1 A; dIG/ time dt = 5 A/µs BT138X-800 Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 13 BT138X-800 NXP Semiconductors 4Q Triac 003aaj946 3 IGT IGT(25°C) 003aaj947 3 IL IL(25°C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 0 -50 1 (4) 0 50 100 Tj (°C) 0 -50 150 (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig. 7. Fig. 8. 0 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 003aaj948 3 003aaj949 40 IT (A) IH IH(25°C) 30 2 20 1 (1) (2) (3) 10 0 -50 Fig. 9. 0 50 100 Tj (°C) 0 150 0 0.5 1 1.5 2 2.5 VT (V) Vo = 1.145 V; Rs = 0.031 Ω Normalized holding current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 ��C; maximum values Fig. 10. On-state current as a function of on-state voltage BT138X-800 Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 13 BT138X-800 NXP Semiconductors 4Q Triac 003aaj950 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT138X-800 Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 13 BT138X-800 NXP Semiconductors 4Q Triac 12. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A P A1 q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b w M c e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 (1) L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are # 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 3-lead TO-220F Fig. 12. Package outline TO-220F (SOT186A) BT138X-800 Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 13 BT138X-800 NXP Semiconductors 4Q Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 13. 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BT138X-800 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 13 BT138X-800 NXP Semiconductors 4Q Triac grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BT138X-800 Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 13 BT138X-800 NXP Semiconductors 4Q Triac 14. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................6 10 Isolation characteristics ........................................6 11 Characteristics ....................................................... 7 12 Package outline ................................................... 10 13 13.1 13.2 13.3 13.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 May 2015 BT138X-800 Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 13