BTA330Y-800BTQ

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Thank you for your cooperation and understanding, WeEn Semiconductors TO -2 20A B BTA330Y-800BT 3Q Hi-Com Triac 27 July 2015 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/ dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 2. Features and benefits • • • • • • • • • • • • • 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High junction operating temperature capability (Tj(max) = 150 °C) High voltage capability High current capability Less sensitive gate for highest noise immunity Internally insulated package Internally isolated mounting base Triggering in three quadrants only Very high immunity to false turn-on by dv/dt and IEC 61000-4-4 fast transient Package is RoHS compliant Package meets UL94V0 flammability requirement Package meets UL1557 isolation test requirement rated at 2500V RMS 3. Applications • • • • Heating controls High power motor control High power switching Applications subject to high temperature (Tj(max) = 150 °C) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current Conditions full sine wave; Tmb ≤ 86 °C; Fig. 1; Fig. 2; Fig. 3 Scan or click this QR code to view the latest information for this product Min Typ Max Unit - - 800 V - - 30 A BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac Symbol Parameter ITSM Conditions Min Typ Max Unit non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 270 A full sine wave; Tj(init) = 25 °C; - - 297 A - - 150 °C - - 50 mA - - 50 mA - - 50 mA tp = 16.7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 75 mA VT on-state voltage IT = 42 A; Tj = 25 °C; Fig. 10 - 1.2 1.55 V VDM = 536 V; Tj = 125 °C; (VDM = 67% 4000 - - V/µs 2000 - - V/µs 20 - - A/ms 15 - - A/ms Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit VD = 400 V; Tj = 150 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit BTA330Y-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Graphic symbol mb T2 T1 sym051 G 1 2 3 TO-220AB (SOT78D) 6. Ordering information Table 3. Ordering information Type number BTA330Y-800BT BTA330Y-800BT Product data sheet Package Name Description Version TO-220AB plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78D All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 86 °C; Fig. 1; Min Max Unit - 800 V - 30 A - 270 A - 297 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I t I t for fusing tp = 10 ms; sine-wave pulse - 364.5 A²s dIT/dt rate of rise of on-state current IG = 70 mA - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C 2 2 over any 20 ms period aaa-019031 40 IT(RMS) (A) IT(RMS) (A) 86 °C 30 aaa-019032 120 80 20 40 10 0 -50 Fig. 1. 0 50 100 Tmb (°C) 0 10-2 150 RMS on-state current as a function of mounting base temperature; maximum values Fig. 2. BTA330Y-800BT Product data sheet 1 10 surge duration (s) f = 50 Hz; Tmb = 86 °C RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 27 July 2015 10-1 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac aaa-019033 40 Ptot (W) 32 24 conduction angle, α (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 α = 180 α 120 82 Tmb(max) (°C) 95.6 90 α 60 109.2 30 16 122.8 8 136.4 0 Fig. 3. 0 10 20 30 150 40 IT(RMS) (A) Total power dissipation as a function of RMS on-state current; maximum values aaa-019034 300 ITSM IT ITSM (A) 240 t 1/f Tj(init) = 25 °C max 180 120 60 0 1 102 10 number of cycles (n) 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA330Y-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac aaa-019035 104 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max 103 (1) 102 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA330Y-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle; Fig. 6 - - 1.7 K/W Rth(j-a) thermal resistance from junction to ambient free air in free air - 60 - K/W aaa-019036 10 Zth(j-mb) (K/W) 1 10-1 P t tp 10-2 10-4 Fig. 6. 10-3 10-2 10-1 1 10 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Tmb = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink; f = 1 MHz; Tmb = 25 °C - 10 - pF BTA330Y-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - - 50 mA - - 50 mA - - 50 mA - - 80 mA - - 100 mA - - 80 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 75 mA VT on-state voltage IT = 42 A; Tj = 25 °C; Fig. 10 - 1.2 1.55 V VGT gate trigger voltage VD = 12 V; Tj = 25 °C; Fig. 11 - 0.9 1.3 V VD = 400 V; Tj = 150 °C; Fig. 11 0.2 0.45 - V VD = 800 V; Tj = 25 °C - - 10 µA VD = 800 V; Tj = 150 °C - 0.4 2 mA VDM = 536 V; Tj = 125 °C; (VDM = 67% 4000 - - V/µs 2000 - - V/µs 20 - - A/ms 15 - - A/ms ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit VD = 400 V; Tj = 150 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit BTA330Y-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac aaa-019037 3 aaa-019038 3 IL IGT IGT(25°C) 2 IL(25°C) (1) (2) 2 (3) 1 0 -50 1 0 50 100 Tj (°C) 0 -50 150 (1) T2- G(2) T2+ G(3) T2+ G+ Fig. 7. Fig. 8. 0 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature aaa-019039 3 aaa-019040 80 IF (A) IH IH(25°C) 60 2 (3) 40 (2) (1) 1 20 0 -50 Fig. 9. 0 50 100 Tj (°C) 0 150 0 1 2 VT (V) 3 Vo = 1.066 V; Rs = 0.010 Ω Normalized holding current as a function of junction temperature (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage BTA330Y-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac aaa-019041 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA330Y-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac 11. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78D E A A1 p mounting base q D1 D L1 Q b2 L b1 1 2 3 w c M b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 ref E e L L1 ref p Q q w mm 4.7 4.3 1.40 1.25 0.9 0.6 1.4 1.1 1.72 1.32 0.6 0.4 16.0 15.2 6.5 10.3 9.7 2.54 14.0 12.8 3.0 3.7 3.5 2.6 2.2 3.0 2.7 0.2 OUTLINE VERSION SOT78D REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 07-04-04 07-07-10 TO-220 Fig. 12. Package outline TO-220AB (SOT78D) BTA330Y-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. 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BTA330Y-800BT Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BTA330Y-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 14 BTA330Y-800BT NXP Semiconductors 3Q Hi-Com Triac 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 3 6 Ordering information ............................................. 3 7 Limiting values .......................................................4 8 Thermal characteristics .........................................7 9 Isolation characteristics ........................................7 10 Characteristics ....................................................... 8 11 Package outline ................................................... 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 July 2015 BTA330Y-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 14 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: WeEn Semiconductors: BTA330Y-800BTQ