BTA212X-800B,127

DISCRETE SEMICONDUCTORS DATA SHEET BTA212X series B Three quadrant triacs high commutation Product specification September 2018 WeEn Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. PINNING - SOT186A PIN BTA212X series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA212XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current PIN CONFIGURATION main terminal 1 2 main terminal 2 3 gate 500B 500 600B 600 800B 800 V 12 95 12 95 12 95 A A SYMBOL mb DESCRIPTION 1 MAX. MAX. MAX. UNIT T2 sym051 case isolated T1 G 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power CONDITIONS MIN. - full sine wave; Ths ≤ 56 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/μs over any 20 ms period Storage temperature Operating junction temperature MAX. -500 5001 -600 6001 UNIT -800 800 V - 12 A - 95 105 45 100 A A A2s A/μs - 2 5 5 0.5 A V W W -40 - 150 125 ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. September 2018 1 Rev 1.300 WeEn Semiconductors Product specification Three quadrant triacs high commutation BTA212X series B ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 4.0 5.5 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- G- 2 2 2 18 21 34 50 50 50 mA mA mA T2+ G+ T2+ GT2- G- VD = 12 V; IGT = 0.1 A IT = 17 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 - 31 34 30 31 1.3 0.7 0.4 0.1 60 90 60 60 1.6 1.5 0.5 mA mA mA mA V V V mA THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Rth j-a Thermal resistance junction to ambient full or half cycle with heatsink compound without heatsink compound in free air STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current2 VD = 12 V; IT = 0.1 A IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 12 A; without snubber; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs 1000 4000 - V/μs - 24 - A/ms - 2 - μs dIcom/dt tgt 2 Device does not trigger in the T2-, G+ quadrant. September 2018 2 Rev 1.300 WeEn Semiconductors Product specification Three quadrant triacs high commutation 20 BTA212X series B BT138 Ptot / W Ths(max) / C 45 15 BT138X IT(RMS) / A = 180 15 56 C 120 1 65 90 10 60 10 85 30 5 105 5 0 0 5 125 15 10 0 -50 0 50 Ths / C IT(RMS) / A Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 150 Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. BTA212 ITSM / A 100 25 BT138 IT(RMS) / A 20 dI T /dt limit 15 100 10 I TSM IT T 5 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 100 ITSM / A 80 1.6 ITSM T 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 56˚C. BT138 IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) BT136 1.4 time Tj initial = 25 C max 1.2 60 1 40 0.8 20 0 0.6 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. September 2018 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.300 WeEn Semiconductors Product specification Three quadrant triacs high commutation 3 IGT(Tj) IGT(25 C) BTA212X series B 40 BTA212 Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- G- 2.5 BT138 IT / A typ max 30 Vo = 1.175 V Rs = 0.0316 Ohms 2 20 1.5 1 10 0.5 0 -50 0 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. BT138 Zth j-hs (K/W) 10 TRIAC with heatsink compound without heatsink compound 2.5 1 unidirectional 2 bidirectional 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 IH(Tj) IH(25C) 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 1000 TRIAC dIcom/dt (A/ms) BTA212 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 20 150 60 80 Tj / C 100 120 140 Fig.12. Typical critical rate of change of commutating current dIcom/dt versus junction temperature. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. September 2018 40 4 Rev 1.300 WeEn Semiconductors Product specification Three quadrant triacs high commutation BTA212X series B MECHANICAL DATA September 2018 5 Rev 1.300 WeEn Semiconductors Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. 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