BTA440Z-800BTQ

BTA440Z-800BT 3Q Hi-Com Triac 20 July 2017 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 2. Features and benefits • • • • • • • • • • • High current TRIAC 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High junction operating temperature capability (Tj(max) = 150 °C) High voltage capability Least sensitive gate for highest noise immunity Low thermal resistance Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Insulated tab rated at 2500 V rms 3. Applications • • • Applications subject to high temperature (Tj(max) = 150 °C) High current / high surge applications High power / industrial controls - e.g. heating, motors, lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current ITSM Tj Min Typ Max Unit - - 800 V - - 40 A non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 state current - - 400 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - - 440 A - - 150 °C junction temperature Static characteristics Conditions full sine wave; Tmb ≤ 110 °C; Fig. 1; Fig. 2; Fig. 3 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 - - 50 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 80 mA VT on-state voltage IT = 56.6 A; Tj = 25 °C; Fig. 10 - - 1.5 V Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 15 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Graphic symbol T2 sym051 1 2 T1 G 3 IITO3P (SOT1292) 6. Ordering information Table 3. Ordering information Type number BTA440Z-800BT Package Name Description Version IITO3P plastic single-ended through-hole package; isolated heatsink mounted; 1 mounting hole; 3-lead TO3P SOT1292 7. Marking Table 4. Marking codes Type number Marking code BTA440Z-800BT BTA440Z-800BT BTA440Z-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 2 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 800 V full sine wave; Tmb ≤ 110 °C; Fig. 1; Fig. 2; Fig. 3 - 40 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - 400 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 440 A I t I t for fusing tp = 10 ms; sine-wave pulse - 800 A²s dIT/dt rate of rise of on-state current IG = 0.2 A - 150 A/µs IGM peak gate current tp = 20 µs - 8 A PGM peak gate power tp = 20 µs - 40 W PG(AV) average gate power - 1 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C aab909-001 50 IT(RMS) (A) 110 °C 40 90 30 70 20 50 10 30 0 -50 0 50 100 10 10-2 150 Tmb (°C) Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values BTA440Z-800BT Product data sheet aab909-002 110 IT(RMS) (A) 10-1 1 10 surge duration (s) f = 50 Hz; Tmb = 110 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 3 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac Ptot (W) aab909-003 50 40 conduction angle, α (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 30 α = 180 ° α 105 Tmb(max) (°C) 114 120 ° 90 ° α 123 60 ° 30 ° 20 132 10 141 0 0 10 20 30 40 150 50 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values aab909-004 500 ITSM (A) IT ITSM 400 t 1/f Tj(init) = 25 °C max 300 200 100 0 1 102 10 number of cycles (n) 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA440Z-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 4 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac aab909-005 104 ITSM (A) IT ITSM t tp Tj(init) = 25 °C max 103 (1) 102 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA440Z-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 5 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 6 - - 0.9 K/W Rth(j-a) thermal resistance from junction to ambient free air in free air - 50 - K/W aab909-006 10 Zth(j-mb) (K/W) 1 10-1 P 10-2 t tp 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Tmb = 25 °C - - 2500 V BTA440Z-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 6 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac 11. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 - - 70 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 - - 160 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 - - 70 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 80 mA VT on-state voltage IT = 56.6 A; Tj = 25 °C; Fig. 10 - - 1.5 V VGT gate trigger voltage VD = 12 V; Tj = 25 °C; Fig. 11 - 0.8 1.3 V VD = 400 V; Tj = 150 °C; Fig. 11 0.2 0.45 - V VD = 800 V; Tj = 25 °C - - 10 µA VD = 800 V; Tj = 150 °C - - 2 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 15 - - A/ms BTA440Z-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 7 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac aab909-007 3 IGT aab909-008 3 IL IL(25°C) IGT(25°C) (3) 2 2 (2) (1) 1 0 -50 1 0 50 100 Tj (°C) 0 -50 150 (1) T2+ G+ (2) T2+ G(3) T2- G- 0 50 100 Tj (°C) 150 Fig. 8. Normalized latching current as a function of junction temperature Fig. 7. Normalized gate trigger current as a function of junction temperature aab909-009 3 aab909-010 80 IT (A) IH IH(25°C) 60 2 40 (1) (2) (3) 1 20 0 -50 0 50 100 Tj (°C) 0 150 0 1 2 VT (V) 3 Vo = 0.928 V; Rs = 0.0068 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 9. Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage BTA440Z-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 8 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac aab909-011 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA440Z-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 9 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac 12. Package outline Fig. 12. Package outline IITO3P (SOT1292) BTA440Z-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 10 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 13. Legal information Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors. In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BTA440Z-800BT Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 11 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA440Z-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 12 / 13 BTA440Z-800BT WeEn Semiconductors 3Q Hi-Com Triac 14. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 6 10. Isolation characteristics.............................................6 11. Characteristics............................................................ 7 12. Package outline........................................................ 10 13. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 20 July 2017 BTA440Z-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 13 / 13