ACT108-800E
AC Thyristor power switch
22 September 2016
Product data sheet
1. General description
AC Thyristor power switch in a SOT54 (TO-92) plastic package with self-protective capabilities
against low and high energy transients.
2. Features and benefits
•
•
•
•
•
•
•
Exclusive negative gate triggering
Full cycle AC conduction
Remote gate separates the gate driver from the effects of the load current
Safe clamping of low energy over-voltage transients
High voltage capability
Self-protective turn-on during high energy voltage transients
Very high noise immunity
3. Applications
•
•
•
Fan motor circuits
Pump motor circuits
Lower-power highly inductive, resistive and safety loads
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current
Conditions
Min
Typ
Max
Unit
-
-
800
V
full sine wave; Tlead ≤ 75 °C; Fig. 1;
Fig. 2; Fig. 3
-
-
0.8
A
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 8
1
-
10
mA
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 8
1
-
10
mA
Static characteristics
IGT
gate trigger current
ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
CM
common
2
G
gate
3
LD
load
Simplified outline
Graphic symbol
LD
G
CM
001aaj924
321
TO-92 (SOT54)
6. Ordering information
Table 3. Ordering information
Type number
ACT108-800E
ACT108-800E
Product data sheet
Package
Name
Description
Version
TO-92
plastic single-ended leaded (through hole) package; 3 leads
SOT54
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ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak onstate current
2
Conditions
2
Min
Max
Unit
-
800
V
full sine wave; Tlead ≤ 75 °C; Fig. 1; Fig. 2;
Fig. 3
-
0.8
A
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5
-
13
A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
-
14.3
A
I t
I t for fusing
tp = 10 ms; sine-wave pulse
-
0.84
A²s
dIT/dt
rate of rise of on-state
current
IG = 20 mA
-
100
A/µs
IGM
peak gate current
t = 20 μs
-
1
A
VGM
peak gate voltage
positive applied gate voltage
-
15
V
PG(AV)
average gate power
over any 20 ms period
-
0.1
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
VPP
peak pulse voltage
-
2.5
kV
Tj = 25 °C; non-repetitive, off-state; ten
pulses on each voltage polarity; 20s or
more between successive pulses; Fig. 6
aaa-011238
1
IT(RMS)
(A)
0.8
aaa-011239
15
75°C
IT(RMS)
(A)
10
0.6
0.4
5
0.2
0
-50
0
50
0
10-2
100
150
Tlead (°C)
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
ACT108-800E
Product data sheet
10-1
1
10
surge duration (s)
f = 50 Hz; Tlead = 75 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
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ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
aaa-011240
1.0
Ptot
(W)
0.8
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
0.6
Tlead(max)
(°C)
77
α = 180°
120°
α
90°
89
60°
30°
0.4
101
113
0.2
0
65
0
0.2
0.4
0.6
0.8
1
IT(RMS) (A)
125
α = conduction angle
a = form factor = IT(RMS)/IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
aaa-011241
15
ITSM
(A)
12
9
6
ITSM
IT
t
3
1/f
0
Tj(init) = 25 °C max
1
102
10
number of cycles (n)
103
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
ACT108-800E
Product data sheet
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ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
aaa-011242
103
ITSM
IT
ITSM
(A)
t
tp
Tj(init) = 25 °C max
102
(1)
10
1
10-5
10-4
10-3
10-2
tp (s)
10-1
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
IEC 61000-4-5 Standards
Surge Generator
RGen
2
Filtering Unit
R
150
AC Mains
L
5 H
Load Model
RG
DUT
220
aaa-011243
Fig. 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
ACT108-800E
Product data sheet
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ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-lead)
thermal resistance
from junction to lead
full cycle with heatsink compound;
Fig. 7
-
-
60
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
full cycle; printed-circuit board
mounted; lead length 4 mm
-
150
-
K/W
aaa-011244
102
Zth(j-lead)
(K/W)
10
1
P
10-1
tp
10-2
10-5
10-4
10-3
10-2
10-1
1
tp (s)
t
10
Fig. 7. Transient thermal impedance from junction to lead as a function of pulse width
ACT108-800E
Product data sheet
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ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 8
1
-
10
mA
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 8
1
-
10
mA
VD = 12 V; IG = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 9
-
-
25
mA
VD = 12 V; IG = 100 mA; LD- G-;
Tj = 25 °C; Fig. 9
-
-
20
mA
Static characteristics
IGT
IL
gate trigger current
latching current
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 10
-
-
20
mA
VT
on-state voltage
IT = 1.1 A; Tj = 25 °C; Fig. 11
-
-
1.3
V
VGT
gate trigger voltage
VD = 12 V; IT = 100 mA; Tj = 25 °C;
Fig. 12
-
-
1
V
VD = 400 V; IT = 100 mA; Tj = 125 °C;
Fig. 12
0.15
-
-
V
VD = 800 V; Tj = 25 °C
-
-
2
µA
VD = 800 V; Tj = 125 °C
-
-
0.2
mA
ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C
850
-
-
V
ID
VCL
off-state current
clamping voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 13
500
-
-
V/µs
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C;
IT(RMS) = 0.8 A; dVcom/dt = 20 V/µs;
(snubberless condition); gate open
circuit; Fig. 14; Fig. 15
0.5
-
-
A/ms
ACT108-800E
Product data sheet
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ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
aaa-011245
3
aaa-011246
3
IGT
IL
IL(25°C)
IGT(25°C)
(2)
2
2
(1)
1
1
0
-50
0
50
100
Tj (°C)
0
-50
150
(1) LD+ G(2) LD- GFig. 8. Normalized gate trigger current as a function of
junction temperature
50
100
Tj (°C)
150
Fig. 9. Normalized latching current as a function of
junction temperature
aaa-011247
3
0
aaa-011248
2
IT
(A)
IH
IH(25°C)
1.5
2
1
1
(1)
(2)
0.5
0
-50
0
50
100
Tj (°C)
0
150
0
0.5
1
(3)
1.5
VT (V)
2
Vo = 0.967 V; Rs = 0.225 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. Normalized holding current as a function of
junction temperature
Fig. 11. On-state current as a function of on-state
voltage
ACT108-800E
Product data sheet
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ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
aaa-011249
1.6
A
B
VGT
VGT(25°C)
aaa-011250
12
10
1.2
8
6
0.8
4
2
0.4
-50
0
50
100
Tj (°C)
0
150
Fig. 12. Normalized gate trigger voltage as a function of
junction temperature
aaa-011251
12
25
50
75
100
Tj (°C)
125
A = dVD/dt at condition Tj °C
B = dVD/dt at condition Tj [125] °C
Fig. 13. Normalized rate of rise of off-state voltage as a
function of junction temperature
aaa-011252
24
A [B]
A
B
A [spec]
18
8
12
4
6
0
25
50
75
100
Tj (°C)
0
125
Fig. 14. Normalized critical rate of rise of commutating
current as a function of junction temperature
Product data sheet
1
10
B
s)
102
A [B] = dIcom/dt at condition B, dVcom/dt
A [spec] is the data sheet value for dIcom/dt
turn-off time is less than 20 ms
A = dIcom/dt at condition Tj °C
B = dIcom/dt at condition Tj [125] °C
VD = 400 V
ACT108-800E
10-1
Fig. 15. Normalized critical rate of change of
commutating current as a function of critical rate of
change of commutating voltage; minimum values
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ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
10. Package outline
Fig. 16. Package outline TO-92 (SOT54)
ACT108-800E
Product data sheet
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ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Definitions
Draft — The document is a draft version only. The content is still under
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modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
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of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
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data sheet shall define the specification of the product as agreed between
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shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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Limited warranty and liability — Information in this document is believed
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towards customer for the products described herein shall be limited in
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Product data sheet
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Please consult the most recently issued document before initiating or
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changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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ACT108-800E
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
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any liability, damages or failed product claims resulting from customer
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Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
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ACT108-800E
WeEn Semiconductors
AC Thyristor power switch
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reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
ACT108-800E
Product data sheet
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ACT108-800E
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AC Thyristor power switch
12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 6
9. Characteristics..............................................................7
10. Package outline........................................................ 10
11. Legal information..................................................... 11
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 22 September 2016
ACT108-800E
Product data sheet
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