BTA201-600B,112

BTA201-600B 3Q Hi-Com Triac 22 September 2016 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This "series B" triac is designed to commutate the full RMS current at the maximum junction temperature without the aid of a snubber. 2. Features and benefits • • • • • • • 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High voltage capability Less sensitive gate for highest noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications • • • General purpose motor control Small loads in washing machines Solenoid drivers 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current Conditions Min Typ Max Unit - - 600 V full sine wave; Tlead ≤ 54 °C; Fig. 1; Fig. 2; Fig. 3 - - 1 A VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 5 - 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 5 - 50 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 5 - 50 mA Static characteristics IGT gate trigger current BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T2 main terminal 2 2 G gate 3 T1 main terminal 1 Simplified outline Graphic symbol T2 sym051 T1 G 321 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number BTA201-600B BTA201-600B Product data sheet Package Name Description Version TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 2 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 600 V full sine wave; Tlead ≤ 54 °C; Fig. 1; Fig. 2; Fig. 3 - 1 A full sine wave; Tj(init) = 25 °C; tp = 16.8 ms - 13.7 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - 12.5 A I t I t for fusing tp = 10 ms; SIN - 0.78 A²s dIT/dt rate of rise of on-state current IG = 0.2 A - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.1 W Tj junction temperature -40 125 °C 003aaa957 1.2 IT(RMS) (A) over any 20 ms period IT(RMS) (A) 54.3 °C 1 003aaa958 3 0.8 2 0.6 1 0.4 0.2 0 -50 0 50 0 150 100 Tlead (°C) Fig. 1. RMS on-state current as a function of lead temperature; maximum values BTA201-600B Product data sheet 10-2 10-1 1 10 surge duration (s) f = 50 Hz; Tlead = 54 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 3 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac 003aaa954 1.5 Ptot (W) conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 1 α = 180° 120° α 90° 60° 30° 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aaa955 103 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max 102 (1) 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA201-600B Product data sheet All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 4 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac 003aaa956 16 ITSM (A) 12 8 ITSM IT 4 t 1/f Tj(init) = 25 °C max 0 1 102 10 number of cycles (n) 103 f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA201-600B Product data sheet All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 5 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-lead) thermal resistance from junction to lead full cycle; Fig. 6 - - 60 K/W half cycle; Fig. 6 - - 80 K/W thermal resistance from junction to ambient free air printed circuit board mounted; lead length = 4 mm - 150 - K/W Rth(j-a) 003aaa961 102 Zth(j-lead) (K/W) 10 (1) 1 (2) P 10-1 tp 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) t 10 (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width BTA201-600B Product data sheet All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 6 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 5 - 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 5 - 50 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 5 - 50 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 - - 30 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 - - 50 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 - - 30 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 30 mA VT on-state voltage IT = 1.4 A; Tj = 25 °C; Fig. 10 - 1.2 1.5 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 - 0.7 1 V VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 0.2 0.3 - V VD = 600 V; Tj = 125 °C - 0.1 0.5 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 12 1000 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 20 V/s; (snubberless condition); gate open circuit 12 - - A/ms VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 10 V/µs; gate open circuit 16 - - A/ms BTA201-600B Product data sheet All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 7 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac 003aaa959 3 003aak510 3 IGT IL IGT(25°C) IL(25°C) 2 2 (1) (2) (3) 1 1 (3) (2) (1) 0 - 50 0 50 100 Tj (°C) 0 -50 150 (1) T2- G(2) T2+ G(3) T2+ G+ 0 50 100 Tj (°C) 150 Fig. 8. Normalized latching current as a function of junction temperature Fig. 7. Normalized gate trigger current as a function of junction temperature 003aak511 3 003aaa960 2 IT (A) IH IH(25°C) 1.6 2 1.2 (1) (2) 0.8 1 (3) 0.4 0 -50 0 50 100 Tj (°C) 0 150 0 0.4 0.8 1.2 1.6 VT (V) 2 Vo = 1.02 V; Rs = 0.358 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 9. Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage BTA201-600B Product data sheet All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 8 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac 003aak512 1.6 dVD/dt VGT (V/µs) VGT(25°C) 1.2 103 0.8 102 0.4 -50 0 50 100 Tj (°C) 10 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA201-600B Product data sheet 003aak508 104 0 50 100 Tj °C 150 Fig. 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 9 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac 10. Package outline Fig. 13. Package outline TO-92 (SOT54) BTA201-600B Product data sheet All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 10 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft — The document is a draft version only. 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BTA201-600B Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 11 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA201-600B Product data sheet All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 12 / 13 BTA201-600B WeEn Semiconductors 3Q Hi-Com Triac 12. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 6 9. Characteristics..............................................................7 10. Package outline........................................................ 10 11. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 22 September 2016 BTA201-600B Product data sheet All information provided in this document is subject to legal disclaimers. 22 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 13 / 13