ACTT4X-800E
AC Thyristor Triac power switch
6 September 2018
Product data sheet
1. General description
Planar passivated AC Thyristor Triac power switch in a SOT186A (TO-220F) "full pack" plastic
package with self-protective capabilities against low and high energy transients.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
•
•
Clamping structure ensuring safe high over-voltage withstand capability
Direct interfacing with low power drivers and microcontrollers
Full cycle AC conduction
Isolated mounting base package
Over-voltage withstand capability to IEC 61000-4-5
Pin compatible with standard triacs
Planar passivated for voltage ruggedness and reliability
Safe clamping capability for low energy over-voltage transients
Self-protective turn-on during high energy voltage transients
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
Very high immunity to false turn-on by dV/dt
3. Applications
•
•
•
•
AC fan, pump and compressor controls
Highly inductive, resistive and safety loads
Large and small appliances (White Goods)
Reversing induction motor controls
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current
ITSM
Min
Typ
Max
Unit
-
-
800
V
-
-
4
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
state current
-
-
35
A
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
-
-
39
A
-
-
125
°C
-
-
2
kV
Tj
junction temperature
VPP
peak pulse voltage
Conditions
full sine wave; Th ≤ 94 °C; Fig. 1;
Fig. 2; Fig. 3
Tj = 25 °C; non-repetitive, off-state;
Fig. 6
ACTT4X-800E
WeEn Semiconductors
AC Thyristor Triac power switch
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 100 mA; LD+ G+;
Tj = 25 °C; Fig. 8
-
-
10
mA
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 8
-
-
10
mA
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 8
-
-
10
mA
Static characteristics
IGT
gate trigger current
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 10
-
-
20
mA
VT
on-state voltage
IT = 6 A; Tj = 25 °C; Fig. 11
-
-
1.7
V
VCL
clamping voltage
ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C
850
-
-
V
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 13
500
-
-
V/µs
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit; Fig. 14;
Fig. 15
4
-
-
A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 10 V/µs; gate open circuit;
Fig. 14; Fig. 15
5
-
-
A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 1 V/µs; gate open circuit;
Fig. 14; Fig. 15
8
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
CM
common
2
LD
load
3
G
gate
mb
n.c.
mounting base; isolated
Graphic symbol
LD
mb
G
CM
003aaf296
1 2 3
TO-220F (SOT186A)
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ACTT4X-800E
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AC Thyristor Triac power switch
6. Ordering information
Table 3. Ordering information
Type number
ACTT4X-800E
ACTT4X-800E
Product data sheet
Package
Name
Description
Version
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
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ACTT4X-800E
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AC Thyristor Triac power switch
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak onstate current
2
Conditions
2
Min
Max
Unit
-
800
V
full sine wave; Th ≤ 94 °C; Fig. 1; Fig. 2;
Fig. 3
-
4
A
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5
-
35
A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
-
39
A
I t
I t for fusing
tp = 10 ms; sine-wave pulse
-
6
A²s
dIT/dt
rate of rise of on-state
current
IG = 20 mA
-
100
A/µs
IGM
peak gate current
t = 20 μs
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.5
W
Tj
junction temperature
-
125
°C
VPP
peak pulse voltage
-
2
kV
over any 20 ms period
Tj = 25 °C; non-repetitive, off-state; Fig. 6
003aag939
5
IT(RMS)
(A)
4
IT(RMS)
94 °C
(A)
16
3
12
2
8
1
4
0
-50
0
50
100
Th (°C)
Product data sheet
0
10-2
150
Fig. 1. RMS on-state current as a function of heatsink
temperature; maximum values
ACTT4X-800E
003aag941
20
10-1
1
10
surge duration (s)
f = 50 Hz; Th = 94 °C
Fig. 2. on-state current as a function of surge duration;
maximum values
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ACTT4X-800E
WeEn Semiconductors
AC Thyristor Triac power switch
003aag943
8
Ptot
(W)
6
4
conduction
angle, α
(degrees)
form
factor
a
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
α
92
α = 180 °
120 °
α
81
Th(max)
86.5 (°C)
97.5
90 °
103
60 °
30 °
108.5
2
114
119.5
0
0
1
2
3
4
5
IT(RMS) (A)
125
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
003aag945
40
ITSM
(A)
30
20
IT
10
0
ITSM
t
T
Tj(init) = 25 °C max
1
102
10
number of cycles
103
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
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ACTT4X-800E
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AC Thyristor Triac power switch
003aag946
103
ITSM
IT
t
ITSM
(A)
tp
Tj(init) = 25 °C max
(1)
102
10
10-5
10-4
10-3
10-2
tp (s)
10-1
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
IEC 61000-4-5 Standards
Surge Generator
RGen
2
Filtering Unit
R
23
AC Mains
L
2 H
Load Model
RG
DUT
220
003aag778
Fig. 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
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ACTT4X-800E
WeEn Semiconductors
AC Thyristor Triac power switch
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance
from junction to
heatsink
full cycle or half cycle; with heatsink
compound; Fig. 7
-
-
5.5
K/W
full cycle or half cycle; without heatsink
compound; Fig. 7
-
-
7.2
K/W
thermal resistance
from junction to
ambient free air
in free air
-
55
-
K/W
Rth(j-a)
003aag947
10
(1)
(2)
Zth(j-h)
(K/W)
(3)
(4)
1
10-1
P
10-2
t
tp
10-3
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 7. Transient thermal impedance from junction to heatsink as a function of pulse width
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; Th = 25 °C
-
-
2500
V
Cisol
isolation capacitance
from main terminal 2 to external
heatsink; f = 1 MHz; Th = 25 °C
-
10
-
pF
ACTT4X-800E
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ACTT4X-800E
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AC Thyristor Triac power switch
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 100 mA; LD+ G+;
Tj = 25 °C; Fig. 8
-
-
10
mA
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 8
-
-
10
mA
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 8
-
-
10
mA
VD = 12 V; IG = 100 mA; LD+ G+;
Tj = 25 °C; Fig. 9
-
-
30
mA
VD = 12 V; IG = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 9
-
-
40
mA
VD = 12 V; IG = 100 mA; LD- G-;
Tj = 25 °C; Fig. 9
-
-
30
mA
Static characteristics
IGT
IL
gate trigger current
latching current
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 10
-
-
20
mA
VT
on-state voltage
IT = 6 A; Tj = 25 °C; Fig. 11
-
-
1.7
V
VGT
gate trigger voltage
VD = 12 V; IT = 100 mA; Tj = 25 °C;
Fig. 12
-
0.8
1
V
VD = 400 V; IT = 100 mA; Tj = 125 °C;
Fig. 12
0.2
0.45
-
V
VD = 800 V; Tj = 25 °C
-
-
10
µA
VD = 800 V; Tj = 125 °C
-
-
0.5
mA
ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C
850
-
-
V
ID
VCL
off-state current
clamping voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 13
500
-
-
V/µs
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit; Fig. 14;
Fig. 15
4
-
-
A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 10 V/µs; gate open circuit;
Fig. 14; Fig. 15
5
-
-
A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 1 V/µs; gate open circuit;
Fig. 14; Fig. 15
8
-
-
A/ms
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ACTT4X-800E
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AC Thyristor Triac power switch
003aag949
3
(1)
IGT
IGT(25 °C)
003aag950
3
IL
IL(25°C)
(2)
2
2
(3)
1
1
0
-50
0
50
100
Tj (°C)
0
-50
150
(1) LD- G(2) LD+ G+
(3) LD+ G-
0
50
100
Tj (°C)
150
Fig. 9. Normalized latching current as a function of
junction temperature
Fig. 8. Normalized gate trigger current as a function of
junction temperature
003aag951
3
003aag952
12
IH
IH(25°C)
IT
(A)
2
8
1
4
(1)
0
-50
0
50
100
Tj (°C)
0
150
0
(2)
(3)
1
2
VT (V)
3
Vo = 1.242 V; Rs = 0.074 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. Normalized holding current as a function of
junction temperature
Fig. 11. On-state current as a function of on-state
voltage
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ACTT4X-800E
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AC Thyristor Triac power switch
003aag953
1.6
VGT
003aaj560
6
A
B
VGT(25°C)
1.2
4
0.8
2
0.4
-50
0
50
100
Tj (°C)
Fig. 12. Normalized gate trigger voltage as a function of
junction temperature
003aaj561
12
0
150
25
50
75
100
Tj (°C)
125
A = dVD/dt at condition Tj °C
B = dVD/dt at condition Tj [125] °C
Fig. 13. Normalized rate of rise of off-state voltage as a
function of junction temperature
003aaj562
40
A [B]
A [spec]
A
B
30
8
20
4
10
0
25
50
75
100
Tj (°C)
0
10-1
125
ACTT4X-800E
Product data sheet
10
B (V/µs)
102
A [B] is dIcom/dt at condition B, dVcom/dt
A [spec] is the specified data sheet value of dIcom/
dt
turn-off time < 20 ms
A = dIcom/dt at condition Tj °C
B = dIcom/dt at condition Tj [125] °C
VD = 400 V
Fig. 14. Normalized critical rate of rise of commutating
current as a function of junction temperature
1
Fig. 15. Normalized critical rate of change of
commutating current as a function of critical rate of
change of commutating voltage; minimum values
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AC Thyristor Triac power switch
11. Package outline
Fig. 16. Package outline TO-220F (SOT186A)
ACTT4X-800E
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AC Thyristor Triac power switch
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, WeEn Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
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In no event shall WeEn Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
Product data sheet
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
ACTT4X-800E
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
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or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific WeEn Semiconductors product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
WeEn Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies WeEn Semiconductors for
any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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13. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................3
7. Limiting values............................................................. 4
8. Thermal characteristics............................................... 7
9. Isolation characteristics...............................................7
10. Characteristics............................................................ 8
11. Package outline........................................................ 11
12. Legal information..................................................... 12
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WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 6 September 2018
ACTT4X-800E
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