BTA208X-800E,127

BTA208X-800E 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package. This "series E" triac balances the requirements of commutation performance and gate sensitivity. The "sensitive gate" "series E" is intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits • • • • • • • • 3Q technology for improved noise immunity Direct interfacing with low power drivers and microcontrollers Good immunity to false turn-on by dV/dt High commutation capability with sensitive gate High voltage capability Isolated mounting base package Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications • • Electronic thermostats General purpose motor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current ITSM Tj Conditions Min Typ Max Unit - - 800 V - - 8 A non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 state current - - 65 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - - 71 A - - 125 °C VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 - - 10 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 - - 10 mA full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2; Fig. 3 junction temperature Static characteristics IGT gate trigger current BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 - - 10 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 12 mA VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 110 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 60 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 10 V/µs; gate open circuit; Fig. 12 5 - - A/ms VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 0.1 V/µs; gate open circuit; Fig. 12 10 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Graphic symbol mb T2 sym051 T1 G 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number BTA208X-800E BTA208X-800E Product data sheet Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 800 V full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2; Fig. 3 - 8 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - 65 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 71 A I t I t for fusing tp = 10 ms; SIN - 21 A²s dIT/dt rate of rise of on-state current IG = 0.2 A - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C over any 20 ms period 003aaa969 10 IT(RMS) IT(RMS) (A) (A) 73 °C 8 20 6 15 4 10 2 5 0 - 50 0 50 100 Th (°C) 0 10- 2 150 Fig. 1. RMS on-state current as a function of heatsink temperature; maximum values BTA208X-800E Product data sheet 003aaa970 25 10- 1 1 10 surge duration (s) f = 50 Hz; Th = 73 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac 003aaa967 12 Ptot (W) 10 8 6 conduction angle (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 α = 180° 120° 71 Th(max) (°C) 80 90° α 89 60° 30° 98 4 107 2 116 0 0 2 4 6 8 125 10 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aaa968 80 ITSM (A) 60 40 ITSM IT 20 t 1/f 0 Tj(init) = 25 °C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA208X-800E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac 003aab121 103 ITSM IT t ITSM (A) tp Tj(init) = 25 °C max (1) 102 10 10- 2 10- 1 1 10 tp (ms) 102 tp ≤ 20 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA208X-800E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink full cycle or half cycle; with heatsink compound; Fig. 6 - - 4.5 K/W full cycle or half cycle; without heatsink compound; Fig. 6 - - 6.5 K/W thermal resistance from junction to ambient free air in free air - 55 - K/W Rth(j-a) 003aaf915 10 (1) (2) Zth(j-h) (K/W) 1 (3) (4) 10- 1 P 10- 2 t tp 10- 3 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 tp (s) (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C - 10 - pF BTA208X-800E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 - - 10 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 - - 10 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 - - 10 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 - - 12 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 - - 18 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 - - 12 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 12 mA VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 - 0.7 1 V 0.25 0.4 - V VD = 800 V; Tj = 125 °C - 0.1 0.5 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 110 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 60 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 10 V/µs; gate open circuit; Fig. 12 5 - - A/ms VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 0.1 V/µs; gate open circuit; Fig. 12 10 - - A/ms BTA208X-800E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac 003aac888 3 001aab100 3 (1) IGT IL IL(25°C) IGT(25°C) 2 2 (2) (3) 1 1 0 - 50 0 50 100 Tj (°C) 0 -50 150 (1) T2- G(2) T2+ G(3) T2+ G+ 0 50 100 Tj (°C) 150 Fig. 8. Normalized latching current as a function of junction temperature Fig. 7. Normalized gate trigger current as a function of junction temperature 001aab099 3 003aaa971 25 IT (A) IH IH(25°C) 20 2 15 10 1 5 0 -50 0 50 100 Tj (°C) 0 150 (1) 0 (2) (3) 1 2 VT (V) 3 Vo = 1.264 V; Rs = 0.0378 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 9. Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage BTA208X-800E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac 001aab101 1.6 003aaa973 103 VGT dIcom/dt (A/ms) VGT(25°C) 102 1.2 typ min 0.8 0.4 -50 10 0 50 100 Tj (°C) 1 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA208X-800E Product data sheet 20 60 100 Tj (°C) 140 Fig. 12. Rate of change of commutating current as a function of junction temperature; typical and minimum values All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac 11. Package outline Fig. 13. Package outline TO-220F (SOT186A) BTA208X-800E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 12. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft — The document is a draft version only. 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In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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BTA208X-800E Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA208X-800E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 13 BTA208X-800E WeEn Semiconductors 3Q Hi-Com Triac 13. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 6 9. Isolation characteristics...............................................6 10. Characteristics............................................................ 7 11. Package outline........................................................ 10 12. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 19 September 2018 BTA208X-800E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 13