BT138X-600G
4Q Triac
Rev.01 - 6 August 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT186A (TO-220F) "full pack" plastic
package intended for use in applications requiring high bidirectional transient and
blocking voltage capability and high thermal cycling performance. Typical applications
include motor control, industrial and domestic lighting, heating and static switching.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Isolated package
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
3. Applications
•
•
General purpose motor control
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDRM
repetitive peak off-state
voltage
ITSM
non-repetitive peak onstate current
Tj
junction temperature
IT(RMS)
RMS on-state current
Conditions
Min
Typ
Max
Unit
-
-
600
V
-
-
95
A
-
-
125
°C
full sine wave; Th ≤ 56 °C;
Fig. 1; Fig. 2; Fig. 3
-
-
12
A
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
5
50
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
-
8
50
mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
-
11
50
mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
-
30
100
mA
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
Static characteristics
IGT
gate trigger current
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4Q Triac
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
200
250
-
V/μs
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
Simplified outline
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
n.c.
mounting base; isolated
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
BT138X-600G
BT138X-600G
Product data sheet
Name
Description
Version
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
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7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak onstate current
Conditions
Min
Max
Unit
-
600
V
full sine wave; Th ≤ 56 °C;
Fig. 1; Fig. 2; Fig. 3
-
12
A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
-
95
A
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
-
105
A
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
-
45
A2s
dIT/dt
rate of rise of on-state
current
IG = 100 mA; T2+ G+
-
50
A/μs
IG = 100 mA; T2+ G-
-
50
A/μs
IG = 100 mA; T2- G-
-
50
A/μs
IG = 200 mA; T2- G+
-
10
A/μs
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.5
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
over any 20 ms period
Fig. 1. RMS on-state current as a function of heatsink
temperature; maximum values
BT138X-600G
Product data sheet
f = 50 Hz; Th = 56 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
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α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
f = 50Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
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tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
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8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance
from junction to
heatsink
full or half cycle; with heatsink
compound; Fig. 6
-
-
4
K/W
full or half cycle; without heatsink
compound; Fig. 6
-
-
5.5
K/W
thermal resistance
from junction to
ambient
in free air
-
55
-
K/W
Rth(j-a)
Conditions
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
Th = 25 °C
-
-
2500
V
Cisol
isolation capacitance
from main terminal 2 to external
heatsink; f = 1 MHz; Th = 25 °C
-
10
-
pF
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10. Characteristics
Table 7. Characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
5
50
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
-
8
50
mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
-
11
50
mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
-
30
100
mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
-
7
45
μA
VD = 12 V; IG= 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
-
16
60
mA
VD = 12 V; IG= 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
-
5
45
mA
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
-
7
60
mA
Static characteristics
IGT
IL
gate trigger current
latching current
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
-
5
40
mA
VT
on-state voltage
IT = 15 A; Tj = 25 °C; Fig. 10
-
1.4
1.65
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
-
0.7
1
V
VD = 400 V; IT = 0.1 A; Tj= 125 °C;
Fig. 11
0.25
0.4
-
V
VD = 600 V; Tj = 125 °C
-
0.1
0.5
mA
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
200
250
-
V/μs
tgt
gate-controlled turn-on
time
ITM = 16 A; VD = 600 V; IG = 0.1 A; dIG/
dt = 5 A/μs
-
2
-
μs
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(1) T2- G+
(2) T2- G(3) T2+ G(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function
of junction temperature
Fig. 9. Normalized holding current as a function of
junction temperature
BT138X-600G
Product data sheet
Fig. 8. Normalized latching current as a function of
junction temperature
Vo = 1.145 V; Rs = 0.031 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
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Fig. 11. Normalized gate trigger voltage as a function of junction temperature
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11. Package outline
BT138X-600G
Product data sheet
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
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specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1 ]
[2]
[3]
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BT138X-600G
Product data sheet
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Notice: All referenced brands, product names, service names and
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13. Contents
1. General description........................................................1
2. Features and benefits....................................................1
3. Applications....................................................................1
4. Quick reference data......................................................1
5. Pinning information........................................................2
6. Ordering information......................................................2
7. Limiting values...............................................................3
8. Thermal characteristics.................................................6
9. Isolation characteristics................................................6
10. Characteristics.............................................................7
11. Package outline..........................................................10
12. Legal information....................................................... 11
13. Contents......................................................................13
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Date of release: 6 August 2018
BT138X-600G
Product data sheet
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