ACTT10X-800CTQ

ACTT10X-800CT AC Thyristor Triac power switch 5 September 2018 Product data sheet 1. General description Planar passivated AC Thyristor Triac power switch in a SOT186A (TO-220F) "full pack" plastic package with self-protective capabilities against low and high energy transients. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 2. Features and benefits • • • • • • • • • • • • Clamping structure ensuring safe high over-voltage withstand capability High junction operating temperature capability Full cycle AC conduction Isolated mounting base package Less sensitive gate for high noise immunity Over-voltage withstand capability to IEC 61000-4-5 Pin compatible with standard triacs Planar passivated for voltage ruggedness and reliability Safe clamping capability for low energy over-voltage transients Self-protective turn-on during high energy voltage transients Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications • • • • • AC fan, pump and compressor controls Highly inductive, resistive and safety loads Large and small appliances (White Goods) Reversing induction motor controls Applications subject to high temperature 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current ITSM Conditions Min Typ Max Unit - - 800 V - - 10 A non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 state current - - 90 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - - 99 A full sine wave; Th ≤ 88 °C; Fig. 1; Fig. 2; Fig. 3 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch Symbol Parameter Tj junction temperature VPP peak pulse voltage Conditions Min Typ Max Unit - - 150 °C Tj = 25 °C; non-repetitive, off-state; Fig. 6 - - 2 kV VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C; Fig. 8 - - 35 mA VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 - - 35 mA VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 - - 35 mA Static characteristics IGT gate trigger current IH holding current VD = 12 V; Tj = 25 °C; Fig. 10 - - 55 mA VT on-state voltage IT = 14.1 A; Tj = 25 °C; Fig. 11 - 1.3 1.5 V VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 850 - - V Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 4 - - A/ms Simplified outline Graphic symbol 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated mb T2 sym051 T1 G 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number ACTT10X-800CT ACTT10X-800CT Product data sheet Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 800 V full sine wave; Th ≤ 88 °C; Fig. 1; Fig. 2; Fig. 3 - 10 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - 90 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 99 A I t I t for fusing tp = 10 ms; sine-wave pulse - 40 A²s dIT/dt rate of rise of on-state current IG = 0.2 A - 100 A/µs IGM peak gate current t = 20 μs - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C VPP peak pulse voltage - 2 kV over any 20 ms period Tj = 25 °C; non-repetitive, off-state; Fig. 6 aaa-013645 12 aaa-013647 30 88 °C IT(RMS) (A) IT(RMS) (A) 8 20 4 10 0 -50 0 50 100 Th (°C) 0 10-2 150 Fig. 1. RMS on-state current as a function of heatsink temperature; maximum values ACTT10X-800CT Product data sheet 10-1 1 10 surge duration (s) f = 50 Hz; Th = 88 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch aaa-013617 16 Ptot (W) 12 8 conduction angle, α (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 α α = 180 °C 120 °C α 90 °C 60 °C 30 °C 4 0 0 2 4 6 8 10 12 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values aaa-013618 100 ITSM (A) 80 60 40 ITSM IT t 20 1/f 0 Tj(init) = 25 °C max 1 10 100 number of cycles (n) 1000 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values ACTT10X-800CT Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch aaa-013619 103 ITSM (A) (1) 102 ITSM IT t tp Tj(init) = 25 °C max 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values IEC 61000-4-5 Standards Surge Generator RGen 2 Filtering Unit R 13 AC Mains L 2 H Load Model RG DUT 220 003aal147 Fig. 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5 ACTT10X-800CT Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink full cycle; with heatsink compound; Fig. 7 - - 2.8 K/W Rth(j-a) thermal resistance from junction to ambient free air in free air - 55 - K/W aaa-013648 10 Zth(j-h) (K/W) 1 10-1 P t tp 10-2 10-4 10-3 10-2 10-1 1 10 tp (s) Fig. 7. Transient thermal impedance from junction to heatsink as a function of pulse width 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; Th = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C - 10 - pF ACTT10X-800CT Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C; Fig. 8 - - 35 mA VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 - - 35 mA VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 - - 35 mA VD = 12 V; IG = 100 mA; LD+ G+; Tj = 25 °C; Fig. 9 - - 70 mA VD = 12 V; IG = 100 mA; LD+ G-; Tj = 25 °C; Fig. 9 - - 70 mA VD = 12 V; IG = 100 mA; LD- G-; Tj = 25 °C; Fig. 9 - - 70 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 10 - - 55 mA VT on-state voltage IT = 14.1 A; Tj = 25 °C; Fig. 11 - 1.3 1.5 V VGT gate trigger voltage VD = 12 V; IT = 100 mA; Tj = 25 °C; Fig. 12 - 1 1.2 V VD = 400 V; IT = 100 mA; Tj = 150 °C; Fig. 12 0.2 0.4 - V VD = 800 V; Tj = 25 °C - - 10 µA VD = 800 V; Tj = 150 °C - - 0.5 mA ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 850 - - V ID VCL off-state current clamping voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 4 - - A/ms All information provided in this document is subject to legal disclaimers. © ACTT10X-800CT Product data sheet 5 September 2018 WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch aaa-013629 3 IGT IGT(25°C) 2 aaa-013632 3 IL IL(25°C) (1) 2 (2) (3) 1 1 0 -50 0 50 100 Tj (°C) 0 -50 150 (1) LD- G(2) LD+ G+ (3) LD+ G- 0 50 100 Tj (°C) 150 Fig. 9. Normalized latching current as a function of junction temperature Fig. 8. Normalized gate trigger current as a function of junction temperature aaa-013634 3 aaa-013650 25 IT (A) IH IH(25°C) 20 2 15 10 1 0 -50 0 50 100 Tj (°C) 0 150 (2) (1) 5 0 (3) 1 2 VT (V) 3 Vo = 1.016 V; Rs = 0.032 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. Normalized holding current as a function of junction temperature Fig. 11. On-state current as a function of on-state voltage ACTT10X-800CT Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch aaa-013639 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 12. Normalized gate trigger voltage as a function of junction temperature ACTT10X-800CT Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch 11. Package outline Fig. 13. Package outline TO-220F (SOT186A) ACTT10X-800CT Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 12. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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ACTT10X-800CT Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ACTT10X-800CT Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 13 ACTT10X-800CT WeEn Semiconductors AC Thyristor Triac power switch 13. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 6 9. Isolation characteristics...............................................6 10. Characteristics............................................................ 7 11. Package outline........................................................ 10 12. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 5 September 2018 ACTT10X-800CT Product data sheet All information provided in this document is subject to legal disclaimers. 5 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 13