BTA316B-600BT,118

BTA316B-600BT 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 2. Features and benefits • • • • • • • • • 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High junction operating temperature capability High voltage capability Less sensitive gate for very high noise immunity Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only 3. Applications • • • • Applications subject to high temperature Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current ITSM Tj Min Typ Max Unit - - 600 V - - 16 A non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 state current - - 140 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - - 150 A - - 150 °C junction temperature Static characteristics Conditions full sine wave; Tmb ≤ 120 °C; Fig. 1; Fig. 2; Fig. 3 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 2 - 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 2 - 50 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 2 - 50 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 60 mA VT on-state voltage IT = 18 A; Tj = 25 °C; Fig. 10 - 1.3 1.5 V Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 20 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 Graphic symbol mb T2 sym051 T1 G 2 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number BTA316B-600BT BTA316B-600BT Product data sheet Package Name Description Version D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 600 V full sine wave; Tmb ≤ 120 °C; Fig. 1; Fig. 2; Fig. 3 - 16 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - 140 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 150 A I t I t for fusing tp = 10 ms; SIN - 98 A²s dIT/dt rate of rise of on-state current IG = 100 mA - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C over any 20 ms period 003aaj662 20 IT(RMS) (A) 16 003aaj663 60 IT(RMS) (A) 120 °C 50 40 12 30 8 20 4 0 -50 10 0 50 100 Tmb (°C) 0 10-2 150 Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values BTA316B-600BT Product data sheet 10-1 1 10 surge duration (s) f = 50 Hz; Tmb = 120 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac 003aaj665 20 P tot (W) 15 conduction angle, (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 α =180° 120° 90° α 60° 30° 10 5 0 0 2 4 6 8 10 12 14 IT(RMS) (A) 16 Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aab668 160 ITSM (A) 120 80 ITSM IT 40 0 t 1/f Tj(init) = 25 °C max 1 102 10 number of cycles (n) 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA316B-600BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac 003aab671 103 ITSM (A) (1) 102 ITSM IT t 10 10-5 tp Tj(init) = 25 °C max 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values BTA316B-600BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle; Fig. 6 - - 1.5 K/W half cycle; Fig. 6 - - 2 K/W thermal resistance from junction to ambient free air in free air - 60 - K/W Rth(j-a) 003aaj343 10 Zth(j-mb) (K/W) 1 (1) 10-1 (2) PD 10-2 10-3 10-5 tp 10-4 10-3 10-2 10-1 1 tp (s) t 10 (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration BTA316B-600BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 2 - 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 2 - 50 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 2 - 50 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 - - 60 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 - - 90 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 - - 60 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 60 mA VT on-state voltage IT = 18 A; Tj = 25 °C; Fig. 10 - 1.3 1.5 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 - 0.8 1 V VD = 400 V; IT = 0.1 A; Tj = 150 °C; Fig. 11 0.25 0.4 - V VD = 600 V; Tj = 150 °C - 0.1 0.5 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 20 - - A/ms BTA316B-600BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac 003aaj344 3 IGT IGT(25°C) 2 003aaj345 3 IL IL(25°C) (1) (2) 2 (3) 1 1 0 -50 0 50 100 Tj (°C) 0 -50 150 (1) T2- G(2) T2+ G(3) T2+ G+ 0 50 100 Tj (°C) 150 Fig. 8. Normalized latching current as a function of junction temperature Fig. 7. Normalized gate trigger current as a function of junction temperature 003aaj346 3 003aaf675 50 IT IH (A) 40 IH(25°C) 2 30 (1) 20 (2) (3) 1 10 0 -50 0 50 100 Tj (°C) 0 150 0 0.5 1 1.5 VT (V) 2 Vo = 1.024 V; Rs = 0.021 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 9. Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage BTA316B-600BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac 003aaj664 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA316B-600BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac 10. Package outline Fig. 12. Package outline D2PAK (SOT404) BTA316B-600BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 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Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. BTA316B-600BT Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA316B-600BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 13 BTA316B-600BT WeEn Semiconductors 3Q Hi-Com Triac 12. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 6 9. Characteristics..............................................................7 10. Package outline........................................................ 10 11. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 12 September 2018 BTA316B-600BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 13