BTA216-600E,127

DISCRETE SEMICONDUCTORS DATA SHEET BTA216 series D, E and F Three quadrant triacs guaranteed commutation Product specification September 2018 WeEn Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA216 series D, E and F GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated guaranteed commutation triacs in a plastic envelope intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers. PINNING - TO220AB PIN main terminal 1 2 main terminal 2 3 gate PARAMETER BTA216BTA216BTA216Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current VDRM IT(RMS) ITSM PIN CONFIGURATION MAX. UNIT 600D 600E 600F 600 V 16 140 A A SYMBOL mb DESCRIPTION 1 tab SYMBOL T2 sym051 main terminal 2 T1 G 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate power Average gate power CONDITIONS full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs over any 20 ms period Storage temperature Operating junction temperature MIN. MAX. UNIT - 6001 V - 16 A - 140 150 98 100 A A A2s A/µs - 2 5 0.5 A W W -40 - 150 125 ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 2018 1 Rev 2.100 WeEn Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA216 series D, E and F THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - 60 1.2 1.7 - K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. BTA216- 2 IGT Gate trigger current IL Latching current IH Holding current VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A MAX. UNIT ...D ...E ...F - 5 5 5 10 10 10 25 25 25 mA mA mA - 15 25 25 25 30 30 30 40 40 mA mA mA - 15 25 30 mA ...D, E, F VT VGT On-state voltage Gate trigger voltage ID Off-state leakage current IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 1.5 1.5 - V V V - 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER dVD/dt Critical rate of rise of off-state voltage dIcom/dt Critical rate of change of commutating current dIcom/dt Critical rate of change of commutating current CONDITIONS MIN. MAX. UNIT BTA216- ...D ...E ...F VDM = 67% VDRM(max); Tj = 110 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A; dVcom/dt = 10V/µs; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A; dVcom/dt = 0.1V/µs; gate open circuit 30 60 70 - V/µs 2.5 6.2 18 - A/ms 12 20 50 - A/ms 2 Device does not trigger in the T2-, G+ quadrant. September 2018 2 Rev 2.100 WeEn Semiconductors Product specification Three quadrant triacs guaranteed commutation 25 BTA216 series D, E and F Tmb(max) / C Ptot / W 95 20 IT(RMS) / A BT139 = 180 20 99 C 101 120 1 15 90 15 107 60 10 30 10 113 5 119 0 0 5 10 IT(RMS) / A 5 125 20 15 0 -50 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 0 50 Tmb / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. ITSM / A 50 IT(RMS) / A 40 dI T /dt limit 30 100 20 I TSM IT T 10 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 150 100 1.6 ITSM T 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 99˚C. ITSM / A IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) 1.4 time Tj initial = 25 C max 1.2 1 50 0.8 0.6 0 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. September 2018 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 2.100 WeEn Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA216 series D, E and F IGT(Tj) IGT(25°C) 50 3 T2+ G+ T2+ GT2- G- 2.5 Tj = 125 C Tj = 25 C typ 40 2 BT139 IT / A max Vo = 1.195 V Rs = 0.018 Ohms 30 1.5 20 1 10 0.5 0 -50 0 50 Tj/°C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. IL(Tj) IL(25 C) 10 2.5 Zth j-mb (K/W) 1 unidirectional bidirectional 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dIcom/dt (A/ms) IH(Tj) IH(25C) 100 F TYPE E TYPE D TYPE 2.5 2 10 1.5 1 0.5 0 -50 1 0 50 Tj / C 100 20 150 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. September 2018 40 60 80 Tj/˚C 100 120 140 Fig.12. Minimum, critical rate of change of commutating current dIcom/dt versus junction temperature, dVcom/dt = 10V/µs. 4 Rev 2.100 WeEn Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA216 series D, E and F MECHANICAL DATA SOT78 Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 September 2018 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 5 Rev 2.100 WeEn Semiconductors Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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