BTA216-600BT,127

BTA216-600BT Triacs high commutation Rev. 3 — 20 September 2018 Product data sheet 1. Product profile 1.1 General description Passivated high commutation triac in a plastic envelope. Featuring high maximum junction temperature and high commutation capability. Intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This device will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. 1.2 Features and benefits  High maximum junction temperature  High commutation capability 1.3 Quick reference data  VDRM  600 V  IGT  50 mA  Tj  150 C  IT(RMS)  16 A  ITSM  140 A  dIcom/dt = 18 A/ms 2. Pinning information Table 1: Pinning Pin Description 1 main terminal 1 (T1) 2 main terminal 2 (T2) 3 gate (G) mb mounting base Simplified outline mb T1 G [1] SOT78 (TO-220AB) Connected to main terminal 2 (T2) T2 sym051 1 2 3 [1] Symbol BTA216-600BT WeEn Semiconductors Triacs high commutation 3. Ordering information Table 2: Ordering information Type number BTA216-600BT Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 3 leads; 1 mounting hole SOT78 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 600 V - 16 A t = 20 ms - 140 A t = 16.7 ms [1] VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb  124 C; see Figure 4 and 5 ITSM non-repetitive peak on-state current full sine wave; Tj = 25 C prior to surge; see Figure 2 and 3 - 150 A I2t I2t for fusing t = 10 ms - 98 A2s dIT/dt rate of rise of on-state current ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s - 100 A/s IGM peak gate current - 2 A VGM peak gate voltage - 5 V PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature 40 +150 C Tj junction temperature - 150 C [1] over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. BTA216-600BT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 20 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 of 11 BTA216-600BT WeEn Semiconductors Triacs high commutation 003aab068 25 Ptot (W) Tmb(max) (°C) α = 180° α 20 126 120° α 120 90° 15 132 60° 30° 10 138 5 144 0 0 4 8 12 16 IT(RMS) (A) 150 20  = conduction angle Fig 1. On-state power dissipation as a function of RMS on-state current; maximum values 003aab070 150 ITSM (A) 100 50 0 1 102 10 n 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of number of half cycles; sinusoidal currents; maximum values BTA216-600BT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 20 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 of 11 BTA216-600BT WeEn Semiconductors Triacs high commutation 003aab069 103 ITSM (A) (1) 102 ITSM IT t T Tj(init) = 25 °C max 10 10−5 10−4 10−3 10−2 10−1 tp (s) tp  20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; sinusoidal currents; maximum values 003aab072 50 IT(RMS) (A) 003aab071 20 124 °C IT(RMS) (A) 40 15 30 10 20 5 10 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 150 Tmb (°C) f = 50 Hz; Tmb  131 C Fig 4. RMS on-state current as a function of surge duration; sinusoidal currents; maximum values BTA216-600BT Product data sheet Fig 5. RMS on-state current as a function of mounting base temperature; maximum values All information provided in this document is subject to legal disclaimers. Rev. 3 — 20 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 of 11 BTA216-600BT WeEn Semiconductors Triacs high commutation 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to mounting base full cycle; see Figure 6 - - 1.2 K/W half cycle; see Figure 6 - - 1.7 K/W thermal resistance from junction to ambient in free air - 60 - K/W 003aab078 10 Zth(j-mb) (K/W) 1 (1) 10−1 (2) PD 10−2 tp 10−3 10−5 10−4 10−3 10−2 10−1 1 t 10 tp (s) (1) half cycle (2) full cycle Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BTA216-600BT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 20 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 of 11 BTA216-600BT WeEn Semiconductors Triacs high commutation 6. Static characteristics Table 5: Static characteristics Tj = 25 C unless otherwise specified. Symbol Parameter gate trigger current IGT latching current IL Conditions VD = 12 V; IT = 0.1 A; see Figure 8 Min Typ Max Unit [1] T2+ G+ 2 18 50 mA T2+ G 2 21 50 mA T2 G 2 34 50 mA VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ - 31 60 mA T2+ G - 34 90 mA T2 G - 30 60 mA VD = 12 V; IGT = 0.1 A; see Figure 11 - 31 60 mA IH holding current VT on-state voltage IT = 20 A; see Figure 9 - 1.2 1.5 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 150 C 0.25 0.4 - V VD = VDRM(max); Tj = 150 C - 0.5 3 mA off-state current ID [1] Device does not trigger in the T2 G+ quadrant. BTA216-600BT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 20 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 of 11 BTA216-600BT WeEn Semiconductors Triacs high commutation 7. Dynamic characteristics Table 6: Dynamic characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit dVD/dt rate of rise of off-state voltage VDM = 0.67VDRM(max); Tj = 150 C; exponential waveform; gate open circuit 500 1500 - V/s dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 150 C; IT(RMS) = 16 A; without snubber; gate open circuit; see Figure 12 9 18 - A/ms tgt gate-controlled turn-on time ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s - 2 - s 001aab073 1.6 VGT (Tj) IGT (Tj) VGT (25°C) IGT (25°C) 1.2 003aab074 3 2 (1) (2) (3) 0.8 0.4 −50 1 0 50 100 Tj (°C) 150 0 -50 0 50 100 Tj (°C) 150 (1) T2 G (2) T2+ G (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature BTA216-600BT Product data sheet Fig 8. Normalized gate trigger current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 20 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 of 11 BTA216-600BT WeEn Semiconductors Triacs high commutation 003aab077 50 IT (A) (1) (2) 003aab075 3 IL(Tj) IL(25°C) (3) 40 2 30 20 1 10 0 0 0.5 1 1.5 2 2.5 0 −50 0 50 100 150 Tj (°C) VT (V) VO = 1.195 V; RS = 18 m (1) Tj = 150 C; typical values (2) Tj = 25 C; maximum values (3) Tj = 150 C; maximum values Fig 9. On-state characteristic Fig 10. Normalized latching current as a function of junction temperature 003aab076 3 dICOMM/dt (A/ms) IH(Tj) IH(25°C) 2 102 1 10 0 −50 003aab079 103 1 0 50 100 Tj (°C) 150 Fig 11. Normalized holding current as a function of junction temperature 20 60 100 180 140 Tj (°C) Fig 12. Rate of change of commutating current as a function of junction temperature; typical values 8. Package information Plastic meets UL94 V-0 at 1⁄8 inch. BTA216-600BT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 20 September 20181 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 of 11 BTA216-600BT WeEn Semiconductors Triacs high commutation 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 13. Package outline SOT78 (TO-220AB) BTA216-600BT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 20 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 of 11 BTA216-600BT WeEn Semiconductors Triacs high commutation Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 10. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors. In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BTA216-600BT Product data sheet Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. Rev. 3 — 20 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 of 11 BTA216-600BT WeEn Semiconductors Triacs high commutation Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA216-600BT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 20 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 of 11