BTA212B-800B,118

DISCRETE SEMICONDUCTORS DATA SHEET BTA212B series B Three quadrant triacs high commutation Product specification July 2018 WeEn Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. PINNING - SOT404 PIN QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER main terminal 1 2 main terminal 2 3 gate MAX. MAX. MAX. UNIT BTA212B- 500B Repetitive peak off-state 500 voltages RMS on-state current 12 Non-repetitive peak on-state 95 current PIN CONFIGURATION DESCRIPTION 1 mb BTA212B series B 800B 800 V 12 95 12 95 A A SYMBOL mb T2 T1 G sym051 2 main terminal 2 600B 600 3 1 D2PAK (SOT404) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power CONDITIONS MIN. - full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/μs over any 20 ms period Storage temperature Operating junction temperature MAX. -500 5001 -600 6001 UNIT -800 800 V - 12 A - 95 105 45 100 A A A2s A/μs - 2 5 5 0.5 A V W W -40 - 150 125 ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. July 2018 1 Rev 1.200 WeEn Semiconductors Product specification Three quadrant triacs high commutation BTA212B series B THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - 60 1.5 2.0 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- G- 2 2 2 18 21 34 50 50 50 mA mA mA T2+ G+ T2+ GT2- G- VD = 12 V; IGT = 0.1 A IT = 17 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 - 31 34 30 31 1.3 0.7 0.4 0.1 60 90 60 60 1.6 1.5 0.5 mA mA mA mA V V V mA STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current2 VD = 12 V; IT = 0.1 A IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 12 A; without snubber; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs 1000 4000 - V/μs - 24 - A/ms - 2 - μs dIcom/dt tgt 2 Device does not trigger in the T2-, G+ quadrant. July 2018 2 Rev 1.200 WeEn Semiconductors Product specification Three quadrant triacs high commutation 20 BTA212B series B BT138 Ptot / W Tmb(max) / C 95 15 IT(RMS) / A BT138 = 180 15 99 C 120 1 102.5 90 10 60 10 110 30 5 117.5 5 0 0 5 125 15 10 0 -50 0 50 Tmb / C IT(RMS) / A Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. BTA212 ITSM / A 100 25 BT138 IT(RMS) / A 20 dI T /dt limit 15 100 10 I TSM IT T 5 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 100 ITSM / A 80 1.6 ITSM T 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 99˚C. BT138 IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) BT136 1.4 time Tj initial = 25 C max 1.2 60 1 40 0.8 20 0 0.6 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. July 2018 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.200 WeEn Semiconductors Product specification Three quadrant triacs high commutation 3 IGT(Tj) IGT(25 C) BTA212B series B 40 BTA212 Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- G- 2.5 BT138 IT / A typ max 30 Vo = 1.175 V Rs = 0.0316 Ohms 2 20 1.5 1 10 0.5 0 -50 0 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. 10 TRIAC 2.5 BT138 Zth j-mb (K/W) 1 unidirectional bidirectional 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 IH(Tj) IH(25C) 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 1000 TRIAC dIcom/dt (A/ms) BTA212 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 20 150 60 80 Tj / C 100 120 140 Fig.12. Typical, critical rate of change of commutating current dIcom/dt versus junction temperature. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. July 2018 40 4 Rev 1.200 WeEn Semiconductors Product specification Three quadrant triacs high commutation BTA212B series B MECHANICAL DATA July 2018 5 Rev 1.200 WeEn Semiconductors Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors. In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges whether or not such damages are based on tort (including negligence, warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. WeEn Semiconductors Translations — A non-English (translated version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.