A4F08QD8BNPBSE

Electronics, Inc. 2590 North First Street, San Jose, CA 95131, U.S.A. Tel: 408-732-5000 Fax: 408-732-5055 http://www.atpinc.com Rev. Date: Jan. 22, 2016 ATP A4F08QD8BNPBSE 8GB DDR4-2133 UNBUFFERED ECC SODIMM DESCRIPTION The ATP A4F08QD8BNPBSE is a high performance 8GB DDR4-2133 Unbuffered ECC SDRAM memory module. It is organized as 1024M x 72 in a 260-pin Small Outline Dual-In-Line Memory Module (SODIMM) package. The module utilizes nine 1024Mx8 DDR4 SDRAMs in FBGA package. The module consists of a 512-byte serial EEPROM, which contains the module configuration information. KEY FEATURES                       High Density: 8GB (1024M x 72) DIMM Rank: 1 Rank Cycle Time: 0.93ns (1067MHz) CAS Latency: 15 Power supply: VDD=1.2V ± 0.06V VPP=2.5V± 0.125V VDDSPD=2.2V~3.6V Support ECC error detection and correction Nominal and dynamic on-die termination(ODT) for data, strobe, and mask signals Low-power auto self refresh (LPASR) Data bus inversion(DBI) for data bus 16 internal banks(x8); 4 groups of 4 banks each Internal self calibration through ZQ Temperature controlled refresh (TCR) Asynchronous Reset 7.8 s refresh interval at lower than TCASE85°C, 3.9s refresh interval at 85°C < TCASE < 95 °C Support address and command signals parity function Selectable BC4 or BL8 on-the fly(OTF) Dynamic On Die Termination Fly-by topology Full module heat spreader PCB Height: 1.18 inches(30mm) Minimum Thickness of Golden Finger: 30 Micro-inch RoHS compliant Part No. A4F08QD8BNPBSE Max Freq 1067MHz (0.93ns@CL=15) x2 Your Ultimate Memory Solution! Page 1 of 11 Interface POD12 ATP A4F08QD8BNPBSE PIN DESCRIPTION Pin Name A0~A16 A10/AP A12/BC_n BA0,BA1 BG0,BG1 RAS_n CAS_n WE_n CS0_n CK0_t CK0_c CKE0 C0~C2 ODT0 ACT_n DQ0~DQ63 CB0~CB7 DQS0_t~DQS8_t DQS0_c~DQS8_c DQM0 ~DQM8 SCL SDA SA0~SA2 PARITY VDD VPP VREFCA VSS VDDSPD ALERT_n RESET_n EVENT_n VTT VDDQ ZQ NC NF RFU Description Address Inputs Address Input/Auto precharge Address Input/Burst chop SDRAM Bank Address Bank group address inputs Row address strobe input Column address strobe input Write enable input Chip Selects Clock Inputs, positive line Clock Inputs, negative line Clock Enables Chip ID On-die termination control lines input Command input: ACT_n indicates an ACTIVATE command. Data Input /Output Data check bits Input/Output Data strobes Data strobes, negative line Data Mask Serial clock for temperature sensor/SPD EEPROM SPD Data Input /Output Serial address inputs Parity for command and address Power supply DRAM activating power supply Reference voltage for control, command, and address pins. Ground SPD Power Alert output Active LOW asynchronous reset Temperature sensor Event Output SDRAM I/O termination supply DRAM DQ power supply Reference ball for ZQ calibration No Connect No function Reserved for future use Your Ultimate Memory Solution! 2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com Tel. (408) 732-5000 Fax (408) 732-5055 Page 2 of 11 ATP A4F08QD8BNPBSE PIN ASSIGNMENT No. Designation No. Designation No. Designation No. Designation 1 VSS 2 VSS 133 A1 134 EVENT_n 3 DQ5 4 DQ4 135 VDD 136 VDD 5 VSS 6 VSS 137 CK0_t 138 CK1_t 7 DQ1 8 DQ0 139 CK0_c 140 CK1_c 9 VSS 10 VSS 141 VDD 142 VDD 11 DQS0_c 12 DQM0 143 PARITY 144 A0 13 DQS0_t 14 VSS 15 VSS 16 DQ6 145 BA1 146 A10/AP 17 DQ7 18 VSS 147 VDD 148 VDD KEY 19 VSS 20 DQ2 149 S0_n 150 BA0 21 DQ3 22 VSS 151 WE_n /A14 152 RAS_n/A16 23 VSS 24 DQ12 153 VDD 154 VDD 25 DQ13 26 VSS 155 ODT0 156 CAS_n/A15 27 VSS 28 DQ8 157 S1_n 158 A13 29 DQ9 30 VSS 159 VDD 160 VDD 31 VSS 32 DQS1_c 161 ODT1 162 C0,CS2_n,NC 33 DQM1 34 DQS1_t 163 VDD 164 VREFCA 35 VSS 36 VSS 165 NC,CS3_c,C1 166 SA2 37 DQ15 38 DQ14 167 VSS 168 VSS 39 VSS 40 VSS 169 DQ37 170 DQ36 41 DQ10 42 DQ11 171 VSS 172 VSS 43 VSS 44 VSS 173 DQ33 174 DQ32 45 DQ21 46 DQ20 175 VSS 176 VSS 47 VSS 48 VSS 177 DQS4_c 178 DQM4 49 DQ17 50 DQ16 179 DQS4_t 180 VSS 51 VSS 52 VSS 181 VSS 182 DQ39 53 DQS2_c 54 DQM2 183 DQ38 184 VSS 55 DQS2_t 56 VSS 185 VSS 186 DQ35 57 VSS 58 DQ22 187 DQ34 188 VSS 59 DQ23 60 VSS 189 VSS 190 DQ45 61 VSS 62 DQ18 191 DQ44 192 VSS 63 DQ19 64 VSS 193 VSS 194 DQ41 65 VSS 66 DQ28 195 DQ40 196 VSS 67 DQ29 68 VSS 197 VSS 198 DQS5_c 69 VSS 70 DQ24 199 DQM5 200 DQS5_t 71 DQ25 72 VSS 201 VSS 202 VSS 73 VSS 74 DQS3_c 203 DQ46 204 DQ47 75 DQM3 76 DQS3_t 205 VSS 206 VSS 77 VSS 78 VSS 207 DQ42 208 DQ43 Your Ultimate Memory Solution! 2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com Tel. (408) 732-5000 Fax (408) 732-5055 Page 3 of 11 ATP A4F08QD8BNPBSE No. Designation No. Designation No. Designation No. Designation 79 DQ30 80 DQ31 209 VSS 210 VSS 81 VSS 82 VSS 211 DQ52 212 DQ53 83 DQ26 84 DQ27 213 VSS 214 VSS 85 VSS 86 VSS 215 DQ49 216 DQ48 87 CB5 88 CB4 217 VSS 218 VSS 89 VSS 90 VSS 219 DQS6_c 220 DQM6 91 CB1 92 CB0 221 DQS6_t 222 VSS 93 VSS 94 VSS 223 VSS 224 DQ54 95 DQS8_c 96 DQM8 225 DQ55 226 VSS 97 DQS8_t 98 VSS 227 VSS 228 DQ50 99 VSS 100 CB6 229 DQ51 230 VSS 101 CB2 102 VSS 231 VSS 232 DQ60 103 VSS 104 CB7 233 DQ61 234 VSS 105 CB3 106 VSS 235 VSS 236 DQ57 107 VSS 108 RESET_n 237 DQ56 238 VSS 109 CKE0 110 CKE1 239 VSS 240 DQS7_c 111 VDD 112 VDD 241 DQM7 242 DQS7_t 113 BG1 114 ACT_n 243 VSS 244 VSS 115 BG0 116 ALERT_n 245 DQ62 246 DQ63 117 VDD 118 VDD 247 VSS 248 VSS 119 A12/BC_n 120 A11 249 DQ58 250 DQ59 121 A9 122 A7 251 VSS 252 VSS 123 VDD 124 VDD 253 SCL 254 SDA 125 A8 126 A5 255 VDDSPD 256 SA0 127 A6 128 A4 257 VPP 258 VTT 129 VDD 130 VDD 259 VPP 260 SA1 131 A3 132 A2 Note: 1. VPP is 2.5V DC Your Ultimate Memory Solution! 2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com Tel. (408) 732-5000 Fax (408) 732-5055 Page 4 of 11 ATP A4F08QD8BNPBSE FUNCTIONAL BLOCK DIAGRAM (PART1 OF 2) Your Ultimate Memory Solution! 2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com Tel. (408) 732-5000 Fax (408) 732-5055 Page 5 of 11 ATP A4F08QD8BNPBSE FUNCTIONAL BLOCK DIAGRAM (PART2 OF 2) CS0_n ODT0 CKE0 CS0_n ODT0 CKE0 CKE ODT CS_n U1 DQS DQS DQS0_t DQS0_c DQ0~7 CKE ODT CS_n ZQ DQ0~7 DQS DQS DQS4_t DQS4_c VSS DQ32~39 DQ8~15 DQS DQS DQS5_t DQS5_c ZQ DQ0~7 VSS DQ40~47 DQ16~23 DQS DQS DQS6_t DQS6_c ZQ DQ0~7 VSS DQ48~55 DQ24~31 VSS DQ56~63 BG[0:1] BA[0:1] A0-A16 PARITY,ACT_n CKE0 ODT0 CS0_n CK0_t CK0_c CKE ODT CS_n DQS DQS DQS8_t DQS8_c CB0~7 U7 ZQ DQ0~7 VSS Serial PD w/ integrated Thermal sensor Integrated Thermal sensor in SPD SDA SCL EVENT EVENT A0 SA0 A1 SA1 DQS DQS DQS7_t DQS7_c ZQ DQ0~7 ZQ VSS CKE ODT CS_n U8 DQS DQS VSS U5 DQ0~7 CKE ODT CS_n DQS3_t DQS3_c ZQ CKE ODT CS_n U2 DQS DQS U3 DQ0~7 CKE ODT CS_n DQS2_t DQS2_c VSS CKE ODT CS_n U9 DQS DQS ZQ DQ0~7 CKE ODT CS_n DQS1_t DQS1_c U6 A2 SA2 Your Ultimate Memory Solution! 2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com Tel. (408) 732-5000 Fax (408) 732-5055 Page 6 of 11 VDDSPD U4 ZQ DQ0~7 SDRAMs: U1-U9 SDRAMs: U1-U9 SDRAMs: U1-U9 SDRAMs: U1-U9 SDRAMs: U1-U9 SDRAMs: U1-U9 SDRAMs: U1-U9 SDRAMs: U1-U9 SDRAMs: U1-U9 SPD VPP All SDRAMs VDD All SDRAMs VREFCA All SDRAMs VTT All SDRAMs VSS All SDRAMs VSS ATP A4F08QD8BNPBSE ABSOLUTE MAXIMUM DC RATINGS Item Voltage on VDD pin relative to VSS Voltage on VDDQ pin relative to VSS Voltage on VPP pin relative to VSS Voltage on any pin relative to VSS Storage Temperature Operating Temperature Symbol VDD VDDQ VPP VIN, VOUT TSTG TCASE Rating -0.4V ~ 1.5V -0.4V ~ 1.5V -0.4V ~ 3.0V -0.4V ~ 1.975V -55 to +100 0 to +95 Units V V V V o C o C Notes 1,3 1,3 4 1 1,2 1,2 Note: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. 3. VDD and VDDQ must be within 300 mV of each other at all times;and VREFCA must be not greater than 0.6 x VDDQ, When VDD and VDDQ are less than 500 mV; VREFCA may be equal to or less than 300 mV 4. VPP must be equal or greater than VDD/VDDQ at all times. AC & DC OPERATING CONDITIONS Recommended operating conditions Item 1,2,3 Supply Voltage Supply Voltage for Output 1,2,3 DRAM Activating Power Supply3 Input reference voltage command/ address bus Termination reference voltage (DC) – command/address bus4 Input High Voltage (DC) Input High Voltage (AC) Input Low Voltage (DC) Input Low Voltage (AC) Symbol VDD VDDQ VPP VREFCA(DC) Min. 1.14 1.14 2.375 0.49 * VDD Typical 1.2 1.2 2.5 0.50 * VDD Max. 1.26 1.26 2.75 0.51 * VDD Units V V V V VTT 0.49 * VDD20mA VREF + 0.075 VREF + 0.1 VSS - 0.50 * VDD 0.51 * VDD+ 20mA VDD VREF - 0.075 VREF - 0.1 V VIH (DC) VIH (AC) VIL (DC) VIL (AC) - V V V V Note: 1. Under all conditions VDDQ must be less than or equal to VDD. 2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. 3. DC bandwidth is limited to 20MHz. 4. VTT termination voltages in excess of specification limit will adversely affect command and address signals' voltage margins, and reduce timing margins. RELIABILITY MTBF @25 oC (Hours) 1 FIT @ 25 oC 2 MTBF @40 oC (Hours) 1 FIT @ 40 oC2 8,403,575 119 4,213,466 237 Note: 1. The Mean Time between Failures (MTBF) is calculated using a prediction methodology, Bellcore Prediction, which based on reliability data of the individual components in the module. It assumes nominal voltage, with all other parameters within specified range. 2. Failures per Billion Device-Hours Your Ultimate Memory Solution! 2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com Tel. (408) 732-5000 Fax (408) 732-5055 Page 7 of 11 ATP A4F08QD8BNPBSE IDD SPECIFICATION PARAMETER & POWER CONSUMPTION (PART1 OF 2) Values are for the DDR4 SDRAM only and are computed from values specified in the vendor’s component data sheet) Symbol Proposed Conditions Value Units 450 mA 63 mA 540 mA 290 mA 310 mA 200 mA 280 mA 420 mA 54 mA 270 mA 1,000 mA Operating One Bank Active-Precharge Current (AL=0) IDD0 IPP0 CKE: High; External clock: On; tCK, nRC, nRAS, CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n: High between ACT and PRE; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... ; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pattern Operating One Bank Active-Precharge IPP Current Same condition with IDD0 Operating One Bank Active-Read-Precharge Current (AL=0) IDD1 CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n: High between ACT, RD and PRE; Command, Address, Bank Group Address, Bank Address Inputs, Data IO: partially toggling; DM_n: sta-ble at 1; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... ; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pattern Precharge Standby Current (AL=0) IDD2N CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling ; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pattern Precharge Standby ODT Current IDD2NT CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling ; Data IO: VSSQ; DM_n: stable at 1; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: toggling according ; Pattern Details: Refer to Component Datasheet for detail pattern Precharge Power-Down Current IDD2P CKE: Low; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: stable at 0; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0 IDD2Q CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: stable at 0; Data IO: VDDQ; DM_n: stable at 1;Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0 Precharge Quiet Standby Current Active Standby Current IDD3N IPP3N CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling ; Data IO: VDDQ; DM_n: stable at 1;Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details:Refer to Component Datasheet for detail pattern Active Standby IPP Current Same condition with IDD3N Active Power-Down Current IDD3P CKE: Low; External clock: On; tCK, CL: sRefer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: stable at 0; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0 Operating Burst Read Current IDD4R CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern; BL: 82; AL: 0; CS_n: High between RD; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling ; Data IO: seamless read data burst with different data between one burst and the next one according ; DM_n: stable at 1; Bank Activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,... ; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pattern Your Ultimate Memory Solution! 2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com Tel. (408) 732-5000 Fax (408) 732-5055 Page 8 of 11 ATP A4F08QD8BNPBSE IDD SPECIFICATION PARAMETER & POWER CONSUMPTION (PART2 OF 2) Values are for the DDR4 SDRAM only and are computed from values specified in the vendor’s component data sheet) Symbol Proposed Conditions Value Units 840 mA 1,530 mA 189 mA 220 mA 290 mA 170 mA 220 mA 1,470 mA 95 mA Operating Burst Write Current IDD4W CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n: High between WR; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling ; Data IO: seamless write data burst with different data between one burst and the next one ; DM_n: stable at 1; Bank Activity: all banks open, WR commands cycling through banks: 0,0,1,1,2,2,... ; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at HIGH; Pattern Details: Refer to Component Datasheet for detail pattern Burst Refresh Current (1X REF) IDD5B IPP5B CKE: High; External clock: On; tCK, CL, nRFC: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n: High between REF; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling ; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: REF command every nRFC ; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pattern Burst Refresh Write IPP Current (1X REF) Same condition with IDD5B Self Refresh Current: Normal Temperature Range IDD6N TCASE: 0 - 85°C; Low Power Array Self Refresh (LP ASR) : Normal4; CKE: Low; External clock: Off; CK_t and CK_c#: LOW; CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n#, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n: stable at 1; Bank Activity: Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: MID-LEVEL Self-Refresh Current: Extended Temperature Range) IDD6E TCASE: 0 - 95°C; Low Power Array Self Refresh (LP ASR) : Extended4; CKE: Low; External clock: Off; CK_t and CK_c: LOW; CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n:stable at 1; Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: MID-LEVEL Self-Refresh Current: Reduced Temperature Range IDD6R TCASE: 0 - TBD (~35-45)°C; Low Power Array Self Refresh (LP ASR) : Reduced4; CKE: Low; External clock: Off; CK_t and CK_c#: LOW; CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n#, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n:stable at 1; Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: MID-LEVEL Auto Self-Refresh Current IDD6A TCASE: 0 - 95°C; Low Power Array Self Refresh (LP ASR) : Auto4;Partial Array Self-Refresh (PASR): Full Array; CKE: Low; External clock: Off; CK_t and CK_c#: LOW; CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: 0; CS_n#, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n:stable at 1; Bank Activity: Auto Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: MID-LEVEL Operating Bank Interleave Read Current IDD7 CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: Refer to Component Datasheet for detail pattern; BL: 81; AL: CL-1; CS_n: High between ACT and RDA; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling ; Data IO: read data bursts with different data between one burst and the next one ; DM_n: stable at 1; Bank Activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pattern IPP7 Operating Bank Interleave Read IPP Current IDD8 Maximum Power Down Current 36 mA Power Consumption per DIMM 1,940 mW PDIMM Same condition with IDD7 System is operating at 1067MHz clock with VDD = 1.2V. This parameter is calculated at a common loading. Your Ultimate Memory Solution! 2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com Tel. (408) 732-5000 Fax (408) 732-5055 Page 9 of 11 ATP A4F08QD8BNPBSE TIMING PARAMETER Parameter Symbol Clock cycle time at CL=15, CWL=11 Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ACTIVE to PRECHARGE command period Average clock high pulse width Average clock low pulse width DQS, DQS to DQ skew, per group, per access DQ output hold time from DQS, DQS DQ low-impedance time from CK, CK DQ high-impedance time from CK, CK DQS, DQS READ Preamble DQS, DQS differential READ Postamble DQS, DQS output high time DQS, DQS output low time DQS, DQS WRITE Preamble DQS, DQS WRITE Postamble DQS, DQS low-impedance time (Referenced from RL-1) DQS, DQS high-impedance time (Referenced from RL+BL/2) DQS, DQS differential input low pulse width DQS, DQS differential input high pulse width DQS, DQS rising edge to CK, CK rising edge DQS, DQS falling edge setup time to CK, CK rising edge DQS, DQS falling edge hold time to CK, CK rising edge tCK tAA tRCD tRP tRC tRAS tCH(avg) tCL(avg) tDQSQ tQH tLZ(DQ) tHZ(DQ) tRPRE tRPST tQSH tQSL tWPRE tWPST tLZ(DQS) tHZ(DQS) tDQSL tDQSH tDQSS tDSS tDSH tDLLK tRTP 0.938 14.06 14.06 14.06 47.06 33 0.48 0.48 TBD -360 0.9 TBD 0.4 0.4 0.9 TBD -360 0.46 0.46 -0.27 0.18 0.18 768 max(4nCK,7.5ns) tWTR_S max(2nCK,2.5ns) DLL locking time Internal READ Command to PRECHARGE Command delay Delay from start of internal write trans-action to internal read command for different bank group Delay from start of internal write trans-action to internal read command for same bank group WRITE recovery time Mode Register Set command cycle time Mode Register Set command update delay CAS to CAS command delay for same bank group Auto precharge write recovery + precharge time Multi-Purpose Register Recovery Time ACTIVE to ACTIVE command delay to same bank group for 1KB page size Four activate window for 1KB page size Command and Address setup time to CK, CK referenced to Vih(ac) / Vil(ac) levels Command and Address hold time from CK, CK referenced to Vih(ac) / Vil(ac) levels Power-up and RESET calibration time Normal operation Full calibration time Normal operation short calibration time tWTR_L tWR tMRD tMOD tCCD tDAL tMPRR tRRD tFAW tIS(base) tIH(base) tZQinit tZQoper tZQCS Exit Reset from CKE HIGH to a valid command tXPR Exit Power Down with DLL on to any valid command; Exit Precharge Power Down with DLL frozen to commands not requiring a locked DLL Asynchronous RTT turn-on delay (Power-Down with DLL frozen) Asynchronous RTT turn-off delay (Power-Down with DLL frozen) RTT dynamic change skew 8Gb REFRESH to REFRESH OR REFRESH to ACTIVE command interval Average periodic refresh interval (0°C ≤ TCASE ≤ 85 °C) Average periodic refresh interval (85°C ≤ TCASE ≤ 95 °C) Exit Self Refresh to commands not requiring a locked DLL Exit Self Refresh to commands requiring a locked DLL Power Down Entry to Exit Timing Write leveling output delay Write leveling output error Note: 1. Unit ’nCK’ represents one clock cycle of the input clock, counting the actual clock edges. Your Ultimate Memory Solution! 2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com Tel. (408) 732-5000 Fax (408) 732-5055 Page 10 of 11 DDR4-2133 Min Max