Product Specifications
PART NO.:
VL470L6523-B3SG
REV: 1.0
General Information
512MB 64Mx64 DDR SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN
Description
The VL470L6523 is a 64Mx64 Double Data Rate SDRAM high density SODIMM. This single rank memory module
consists of eight CMOS 64Mx8 bits with 4 banks Synchronous DRAMs in TSOP-II 400 mil packages and a 2K
EEPROM in an 8-pin TSSOP package. This module is a 200-pin small-outline dual in-line memory module and is
intended for mounting into an edge connector socket. Decoupling capacitors are mounted on the printed circuit board
for each DDR SDRAM.
Features
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Pin Description
200-pin, small-outline dual in-line memory module (SODIMM)
Two data transfers per clock cycle
VDD = VDDQ = 2.5V +/-0.2V for DDR333
JEDEC standard 2.5V I/O (SSTL_2 compatible)
VDDSPD = 2.3V to 3.6V
Bi-directional data-strobe (DQS)
Differential clock inputs (CK and CK#)
DLL aligns DQ and DQS transition with CK transition
Programmable read latency: DDR333 (2.5 clock)
Programmable burst; length (2, 4, 8)
Programmable burst (sequential & interleave)
Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)
Serial presence detect (SPD) with EEPROM
Lead-free, RoHS compliant
JEDEC pinout
Gold edge contacts
PCB: Height 31.75mm (1.250”), double sided component
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Operating temperature (TA): - Commercial (0 C
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