VL-MM7-4EBN

Product Specifications PART NO.: VL47B5263A-F8SD-I REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with thermal sensor in an 8-pin MLF package. This module is a 204-pin small-outline dual in-line memory module and is intended for mounting into an edge connector socket. Decoupling capacitors are mounted on the printed circuit board for each DDR3 SDRAM. Features • • • • • • • • • • • • • • • • • • • • • • • Pin Description 204-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rate: PC3-8500 VDD = VDDQ = 1.5V +/-0.075V JEDEC standard 1.5V +/-0.075V I/O (SSTL_15 compatible) VDDSPD = 3.0V to 3.6V Eight internal component banks for concurrent operation 8-bit pre-fetch architecture Bi-directional differential data-strobe Nominal and dynamic on-die termination (ODT) ZQ calibration support Programmable CAS# latency: 7 (DDR3-1066) Programmable burst; length (8) Average refresh period 7.8 us Asynchronous reset Fly-by topology On board terminated command, address, and control bus Serial presence detect (SPD) EEPROM with thermal sensor Thermal sensor range: -40oC to +125oC (Max +/-3oC accuracy) JEDEC pinout Gold edge contacts Lead-free, RoHS compliant PCB: Height 30.00mm (1.181”), double sided component Operating temperature (TOPER): -40 to +95oC (module screening using commercial DRAM) o o Notes: Double refresh rate is required when 85 C < TOPER